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research
SEU effects in registers and in a dual-ported static RAM designed in a 0.25
μ
\mu
μ
m CMOS technology for applications in the LHC
Authors
F Faccio
Kostas C Kloukinas
G Magazzù
A Marchioro
Publication date
29 October 1999
Publisher
CERN
Doi
Cite
Abstract
Abstract is not available.
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oai:cds.cern.ch:437160
Last time updated on 30/10/2014
