CEP-stable Tunable THz-Emission Originating from Laser-Waveform-Controlled Sub-Cycle Plasma-Electron Bursts

We study THz-emission from a plasma driven by an incommensurate-frequency two-colour laser field. A semi-classical transient electron current model is derived from a fully quantum-mechanical description of the emission process in terms of sub-cycle field-ionization followed by continuum-continuum electron transitions. For the experiment, a CEP-locked laser and a near-degenerate optical parametric amplifier are used to produce two-colour pulses that consist of the fundamental and its near-half frequency. By choosing two incommensurate frequencies, the frequency of the CEP-stable THz-emission can be continuously tuned into the mid-IR range. This measured frequency dependence of the THz-emission is found to be consistent with the semi-classical transient electron current model, similar to the Brunel mechanism of harmonic generation

Symmetry-breaking and chaos in electron transport in semiconductor superlattices

We study the motion of electrons in a single miniband of a semiconductor superlattice driven by THz electric field polarized along the growth direction. We work in the semiclassical balance-equation model, including different elastic and inelastic scattering rates, and incorporating the self-consistent electric field generated by electron motion. We explore regions of complex dynamics, which can include chaotic behaviour and symmetry-breaking. We estimate the magnitudes of dc current and dc voltage that spontaneously appear in regions of broken-symmetry for parameters characteristic of modern semiconductor superlattices. This work complements PRL 80(1998)2669 [ cond-mat/9709026 ].Comment: 4 pages, 3 figures, RevTEX, EPS

Bound-to-bound and bound-to-continuum optical transitions in combined quantum dot - superlattice systems

By combining band gap engineering with the self-organized growth of quantum dots, we present a scheme of adjusting the mid-infrared absorption properties to desired energy transitions in quantum dot based photodetectors. Embedding the self organized InAs quantum dots into an AlAs/GaAs superlattice enables us to tune the optical transition energy by changing the superlattice period as well as by changing the growth conditions of the dots. Using a one band envelope function framework we are able, in a fully three dimensional calculation, to predict the photocurrent spectra of these devices as well as their polarization properties. The calculations further predict a strong impact of the dots on the superlattices minibands. The impact of vertical dot alignment or misalignment on the absorption properties of this dot/superlattice structure is investigated. The observed photocurrent spectra of vertically coupled quantum dot stacks show very good agreement with the calculations.In these experiments, vertically coupled quantum dot stacks show the best performance in the desired photodetector application.Comment: 8 pages, 10 figures, submitted to PR

Spontaneous DC Current Generation in a Resistively Shunted Semiconductor Superlattice Driven by a TeraHertz Field

We study a resistively shunted semiconductor superlattice subject to a high-frequency electric field. Using a balance equation approach that incorporates the influence of the electric circuit, we determine numerically a range of amplitude and frequency of the ac field for which a dc bias and current are generated spontaneously and show that this region is likely accessible to current experiments. Our simulations reveal that the Bloch frequency corresponding to the spontaneous dc bias is approximately an integer multiple of the ac field frequency.Comment: 8 pages, Revtex, 3 Postscript figure

Intraband transitions in quantum dot-superlattice heterostructures

8 pages, 10 figuresWe present a scheme of adjusting the mid-infrared absorption properties to desired energy transitions in quantum dot-based photodetectors by combining band gap engineering with the self-organized growth of quantum dots. Embedding the self-organized InAs quantum dots into an AlAs/GaAs superlattice enables us to tune the optical transition energy by changing the superlattice period as well as by changing the growth conditions of the dots. Using a one-band envelope function framework, we are able, in a three-dimensional calculation, to predict the absorption spectra of these devices as well as their polarization properties. These calculations further predict a strong impact of the dots on the superlattice minibands. By comparing aligned, periodic dot stacks with nonperiodic dot arrangements within the superlattice, we can experimentally confirm this prediction

Linear optical absorption spectra of mesoscopic structures in intense THz fields: free particle properties

We theoretically study the effect of THz radiation on the linear optical absorption spectra of semiconductor structures. A general theoretical framework, based on non-equilibrium Green functions, is formulated, and applied to the calculation of linear optical absorption spectrum for several non-equilibrium mesoscopic structures. We show that a blue-shift occurs and sidebands appear in bulk-like structures, i.e., the dynamical Franz-Keldysh effect [A.-P. Jauho and K. Johnsen, Phys. Rev. Lett. 76, 4576 (1996)]. An analytic calculation leads to the prediction that in the case of superlattices distinct stable steps appear in the absorption spectrum when conditions for dynamical localization are met.Comment: 13 Pages, RevTex using epsf to include 8 ps figures. Submitted to Phys. Rev. B (3 April 97

Electrically Switchable Photonic Molecule Laser

We have studied the coherent intercavity coupling of the evanescent fields of the whispering gallery modes of two terahertz quantum-cascade lasers implemented as microdisk cavities. The electrically pumped single-mode operating microcavities allow to electrically control the coherent mode coupling for proximity distances of the cavities up to 30-40 \mu\m. The optical emission of the strongest coupled photonic molecule can be perfectly switched by the electrical modulation of only one of the coupled microdisks. The threshold characteristics of the strongest coupled photonic molecule demonstrates the linear dependence of the gain of a quantum-cascade laser on the applied electric field.Comment: 4 pages, 4 figure

Intersubband gain in a Bloch oscillator and Quantum cascade laser

The link between the inversion gain of quantum cascade structures and the Bloch gain in periodic superlattices is presented. The proposed theoretical model based on the density matrix formalism is able to treat the gain mechanism of the Bloch oscillator and Quantum cascade laser on the same footing by taking into account in-plane momentum relaxation. The model predicts a dispersive contribution in addition to the (usual) population-inversion-dependent intersubband gain in quantum cascade structures and - in the absence of inversion - provides the quantum mechanical description for the dispersive gain in superlattices. It corroborates the predictions of the semi-classical miniband picture, according to which gain is predicted for photon energies lower than the Bloch oscillation frequency, whereas net absorption is expected at higher photon energies, as a description which is valid in the high-temperature limit. A red-shift of the amplified emission with respect to the resonant transition energy results from the dispersive gain contribution in any intersubband transition, for which the population inversion is small.Comment: 10 pages, 6 figure

Intrinsic response time of graphene photodetectors

Graphene-based photodetectors are promising new devices for high-speed optoelectronic applications. However, despite recent efforts, it is not clear what determines the ultimate speed limit of these devices. Here, we present measurements of the intrinsic response time of metal-graphene-metal photodetectors with monolayer graphene using an optical correlation technique with ultrashort laser pulses. We obtain a response time of 2.1 ps that is mainly given by the short lifetime of the photogenerated carriers. This time translates into a bandwidth of ~262 GHz. Moreover, we investigate the dependence of the response time on gate voltage and illumination laser power

Cross-syndrome comparison of real-world executive functioning and problem solving using a new problem-solving questionnaire

Background. Individuals with neurodevelopmental disorders like Williams syndrome and Down syndrome exhibit executive function impairments on experimental tasks (Lanfranchi, Jerman, Dal Pont, Alberti, & Vianello, 2010; Menghini, Addona, Costanzo, & Vicari, 2010), but the way that they use executive functioning for problem solving in everyday life has not hitherto been explored. The study aim is to understand cross-syndrome characteristics of everyday executive functioning and problem solving. Methods. Parents/carers of individuals with Williams syndrome (n=47) or Down syndrome (n=31) of a similar chronological age (m =17 years 4 months and 18 years respectively) as well as those of a group of younger typically developing children (n=34; m=8 years 3 months) completed two questionnaires: the Behavior Rating Inventory of Executive Function (BRIEF; Gioia, Isquith, Guy, & Kenworthy, 2000) and a novel Problem-Solving Questionnaire. Results. The rated likelihood of reaching a solution in a problem solving situation was lower for both syndromic groups than the typical group, and lower still for the Williams syndrome group than the Down syndrome group. The proportion of group members meeting the criterion for clinical significance on the BRIEF was also highest for the Williams syndrome group. While changing response, avoiding losing focus and maintaining perseverance were important for problem-solving success in all groups, asking for help and avoiding becoming emotional were also important for the Down syndrome and Williams syndrome groups respectively. Keeping possessions in order was a relative strength amongst BRIEF scales for the Down syndrome group. Conclusion. Results suggest that individuals with Down syndrome tend to use compensatory strategies for problem solving (asking for help and potentially, keeping items well ordered), while for individuals with Williams syndrome, emotional reactions disrupt their problem- solving skills. This paper highlights the importance of identifying syndrome-specific problem-solving strengths and difficulties to improve effective functioning in everyday life