168 research outputs found

    The 6dF Galaxy Survey: a low-redshift benchmark for bulge-dominated galaxies

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    The 6dF Galaxy Survey provides a very large sample of galaxies with reliable measurements of Lick line indices and velocity dispersions. This sample can be used to explore the correlations between mass and stellar population parameters such as age, metallicity and [alpha/Fe]. Preliminary results from such an analysis are presented here, and show that age and metallicity are significantly anti-correlated for both passive and star-forming galaxies. Passive galaxies have strong correlations between mass and metallicity and between age and alpha-element over-abundance, which combine to produce a downsizing relation between age and mass. For old passive galaxies, the different trends of M/L with mass and luminosity in different passbands result from the differential effect of the mass-metallicity relation on the luminosities in each passband. Future work with this sample will examine the Fundamental Plane of bulge-dominated galaxies and the influence of environment on relations between stellar population parameters and mass.Comment: 4 pages, to appear in "Formation and Evolution of Galaxy Bulges", Proceedings of IAU Symposium No. 245 (Oxford, 16-20 July 2007), eds Martin Bureau, Lia Athanassoula, Beatriz Barbu

    Voltammetric Characterization of Redox-Inactive Guest Binding to Ln III [15-Metallacrown-5] Hosts Based on Competition with a Redox Probe

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    A novel competitive binding assay was implemented to monitor the binding of a redox inactive substrate to a redox inactive metallacrown host based on its competition with ferrocene carboxylate (FcC − ) using cyclic voltammetry (CV). First, the binding of FcC − to Ln III [15-MC Cu II ,N,L-pheHA -5] (LnMC) hosts was characterized by cyclic voltammetry. It was shown that the voltammetric half wave potentials, E 1/2 , shifted to more positive potentials upon the addition of LnMC. The explicit dependence of E 1/2 with the concentration of LnMC was used to determine the association constants for the complex. The FcC − binding strength decreased with larger central lanthanide metals in the LnMC hosts, and substantially weaker binding was observed with La III . X-ray crystallography revealed that the hydrophobic host cavity incompletely encapsulated FcC − when the guest was bound to the nine-coordinate La III , suggesting the LnMC’s ligand side chains play a substantial role in guest recognition. With knowledge of the MC-FcC − solution thermodynamics, the binding affinity of a redox inactive guest was then assessed. Addition of sodium benzoate to a LnMC and FcC − mixture resulted in E 1/2 shifting back to the value observed for FcC − in the absence of LnMC. The association constants between benzoate and LnMC’s were calculated via the competitive binding approach. Comparison with literature values suggests this novel assay is a viable method for determining association constants for host–guest systems that exhibit the proper electrochemical behavior. Notably, this CV competitive binding approach does not require the preparation of a modified electrode or a tethered guest, and thus can be generalized to a number of host–guest systems.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/77442/1/chem_200903015_sm_miscellaneous_information.pd

    Band Alignments, Electronic Structure, and Core-Level Spectra of Bulk Molybdenum Dichalcogenides (MoS<inf>2</inf>, MoSe<inf>2</inf>, and MoTe<inf>2</inf>)

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    A comprehensive study of bulk molybdenum dichalcogenides is presented with the use of soft and hard X-ray photoelectron (SXPS and HAXPES) spectroscopy combined with hybrid density functional theory (DFT). The main core levels of MoS2, MoSe2, and MoTe2 are explored. Laboratory-based X-ray photoelectron spectroscopy (XPS) is used to determine the ionization potential (IP) values of the MoX2 series as 5.86, 5.40, and 5.00 eV for MoSe2, MoSe2, and MoTe2, respectively, enabling the band alignment of the series to be established. Finally, the valence band measurements are compared with the calculated density of states which shows the role of p-d hybridization in these materials. Down the group, an increase in the p-d hybridization from the sulfide to the telluride is observed, explained by the configuration energy of the chalcogen p orbitals becoming closer to that of the valence Mo 4d orbitals. This pushes the valence band maximum closer to the vacuum level, explaining the decreasing IP down the series. High-resolution SXPS and HAXPES core-level spectra address the shortcomings of the XPS analysis in the literature. Furthermore, the experimentally determined band alignment can be used to inform future device work

    The 6dF galaxy survey: Fundamental Plane data

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    We report the 6dFGS Fundamental Plane (6dFGSv) catalogue that is used to estimate distances and peculiar velocities for nearly 9000 early-type galaxies in the local (z < 0.055) universe. Velocity dispersions are derived by cross-correlation from 6dF V

    Modular Design via Multiple Anion Chemistry of the High Mobility van der Waals Semiconductor Bi₄O₄SeCl₂

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    Making new van der Waals materials with electronic or magnetic functionality is a chemical design challenge for the development of two-dimensional nanoelectronic and energy conversion devices. We present the synthesis and properties of the van der Waals material Bi4O4SeCl2, which is a 1:1 superlattice of the structural units present in the van der Waals insulator BiOCl and the three-dimensionally connected semiconductor Bi2O2Se. The presence of three anions gives the new structure both the bridging selenide anion sites that connect pairs of Bi2O2 layers in Bi2O2Se and the terminal chloride sites that produce the van der Waals gap in BiOCl. This retains the electronic properties of Bi2O2Se while reducing the dimensionality of the bonding network connecting the Bi2O2Se units to allow exfoliation of Bi4O4SeCl2 to 1.4 nm height. The superlattice structure is stabilized by the configurational entropy of anion disorder across the terminal and bridging sites. The reduction in connective dimensionality with retention of electronic functionality stems from the expanded anion compositional diversity

    The 6dF galaxy survey: fundamental plane data

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    We report the 6dFGS Fundamental Plane (6dFGSv) catalogue that is used to estimate distances and peculiar velocities for nearly 9000 early-type galaxies in the local (z < 0.055) universe. Velocity dispersions are derived by cross-correlation from 6dF V-band spectra with typical S/N of 12.9 Å−1 for a sample of 11 315 galaxies; the median velocity dispersion is 163 km s−1 and the median measurement error is 12.9 per cent. The photometric Fundamental Plane (FP) parameters (effective radii and surface brightnesses) are determined from the JHK 2MASS images for 11 102 galaxies. Comparison of the independent J- and K-band measurements implies that the average uncertainty in XFP, the combined photometric parameter that enters the FP, is 0.013 dex (3 per cent) for each band. Visual classification of morphologies was used to select a sample of nearly 9000 early-type galaxies that form 6dFGSv. This catalogue has been used to study the effects of stellar populations on galaxy scaling relations, to investigate the variation of the FP with environment and galaxy morphology, to explore trends in stellar populations through, along and across the FP, and to map and analyse the local peculiar velocity field

    Endothelial-like malignant glioma cells in dynamic three dimensional culture identifies a role for VEGF and FGFR in a tumor-derived angiogenic response

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    Aims: Recent studies have observed that cells from high-grade glial tumors are capable of assuming an endothelial phenotype and genotype, a process termed ‘vasculogenic mimicry’ (VM). Here we model and manipulate VM in dynamic 3-dimensional (3D) glioma cultures. Methods: The Rotary Cell Culture System (RCCS) was used to derive large macroscopic glioma aggregates, which were sectioned for immunohistochemistry and RNA extracted prior to angiogenic array-PCR. Results: A 3D cell culture induced microenvironment (containing only glial cells) is sufficient to promote expression of the endothelial markers CD105, CD31 and vWF in a proportion of glioma aggregates in vitro. Many pro-angiogenic genes were upregulated in glioma aggregates and in primary explants and glioma cells were capable of forming tubular-like 3D structures under endothelial-promoting conditions. Competitive inhibition of either vascular endothelial growth factor or fibroblast growth factor receptor was sufficient to impair VM and downregulate the tumor-derived angiogenic response, whilst impairing tumor cell derived tubule formation. Glioma xenografts using the same cells reveal tumor-derived vessel-like structures near necrotic areas, consistent with widespread tumor-derived endothelial expression in primary glioma tissue. Conclusions: Our findings support studies indicating that tumor-derived endothelial cells arise in gliomas and describe a dynamic 3D culture as a bona fide model to interrogate the molecular basis of this phenomenon in vitro. Resistance to current anti-angiogenic therapies and the contribution of tumor derived endothelial cells to such resistance are amenable to study using the RCCS

    Low temperature growth and optical properties of alpha-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition

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    Plasma enhanced atomic layer deposition was used to deposit thin films of Ga2O3 on to c-plane sapphire substrates using triethylgallium and O2 plasma. The influence of substrate temperature and plasma processing parameters on the resultant crystallinity and optical properties of the Ga2O3 films were investigated. The deposition temperature was found to have a significant effect on the film crystallinity. At temperatures below 200°C amorphous Ga2O3 films were deposited. Between 250°C and 350°C the films became predominantly α-Ga2O3. Above 350°C the deposited films showed a mixture of α-Ga2O3 and Δ-Ga2O3 phases. Plasma power and O2 flow rate were observed to have less influence over the resultant phases present in the films. However, both parameters could be tuned to alter the strain of the film. Ultraviolet transmittance measurements on the Ga2O3 films showed that the bandgaps ranges from 5.0 eV to 5.2 eV with the largest bandgap of 5.2 eV occurring for the α-Ga2O3 phase deposited at 250°C

    Multi-Phase Sputtered TiO2-Induced Current–Voltage Distortion in Sb2Se3 Solar Cells

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    Despite the recent success of CdS/Sb2Se3 heterojunction devices, cadmium toxicity, parasitic absorption from the relatively narrow CdS band gap (2.4 eV) and multiple reports of inter-diffusion at the interface forming Cd(S,Se) and Sb2(S,Se)3 phases, present significant limitations to this device architecture. Among the options for alternative partner layers in antimony chalcogenide solar cells, the wide band gap, non-toxic titanium dioxide (TiO2) has demonstrated the most promise. It is generally accepted that the anatase phase of the polymorphic TiO2 is preferred, although there is currently an absence of analysis with regard to phase influence on device performance. This work reports approaches to distinguish between TiO2 phases using both surface and bulk characterization methods. A device fabricated with a radio frequency (RF) magnetron sputtered rutile-TiO2 window layer (FTO/TiO2/Sb2Se3/P3HT/Au) achieved an efficiency of 6.88% and near-record short–circuit current density (Jsc) of 32.44 mA cm−2, which is comparable to established solution based TiO2 fabrication methods that produced a highly anatase-TiO2 partner layer and a 6.91% efficiency device. The sputtered method introduces reproducibility challenges via the enhancement of interfacial charge barriers in multi-phase TiO2 films with a rutile surface and anatase bulk. This is shown to introduce severe S-shaped current–voltage (J–V) distortion and a drastic fill–factor (FF reduction in these devices
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