Places et agents : les divisions ethnique et sexuelle du travail au Québec de 1931 à 1981

La distribution socio-professionnelle de la population active québécoise s’est transformée au cours du vingtième siècle, comme on peut le constater à l’aide des données des recensements canadiens de 1931 à 1981, offrant une codification des occupations comparable. De même, la composition sexuelle et ethnique de la main-d’oeuvre a considérablement évolué au cours de cette période. Les auteurs analysent la façon dont ces clivages sexuel et ethnique sont mis à contribution, à différents moments, pour assigner des agents aux différentes places dans la division du travail ; il s’agit en particulier de voir comment les groupes dominés définis par ces deux clivages sont utilisés pour remplir les fonctions inférieures dans la hiérarchie des emplois. L’usage de modèles complexes, du type log-linéaire, permet de distinguer d’une part des effets bruts, traduisant la réalité vécue des groupes sexuels et ethniques sur le marché du travail, et d’autre part les effets nets, correspondant aux règles plus ou moins permanentes, mais moins évidentes, régissant l’accès de ces groupes aux divers emplois.The socio-professional distribution of Quebec's total labour force has changed during the twentieth century, as one can observe from the 1931 to 1981 Canadian censuses that provide comparative occupation codes. As well, the sexual and ethnic composition of the labour force has changed substantially during this period. The authors analyse the manner in which these sexual and ethnic cleavages are, at various moments, called upon to assign agents to different places in the division of labour; in particular, it is a matter of seeing how the dominated groups, defined by these two cleavages, are used to fulfill the lower functions of the work hierarchy. The use of complex models of the linear log type, makes it possible to distinguish, on the one hand, crude effects relating the reality experienced by sexual and ethnic groups in the labour force; and on the other hand, the net effects corresponding to the more or less permanent, but less evident, rules which govern these groups' access to the various jobs.La distributión socio-profesional de la población activa de Quebec se ha ido transformando durante el siglo XX. Esto Io atestigua la información recogida en los censos canadienses de 1931 a 1981, que presentan una codificación semejante de la ocupación. Del mismo modo, la composición sexual y étnica de la mano de obra ha cambiado considerablemente en el curso de este período. Los autores analizan la forma en la que estos conjuntos discriminatorios, étnico y sexual, echan mano de agentes, en diferentes mornentos, para ocupar las vacantes diversas dentro de la división del trabajo; especificamente, se trata de enterarse cómo los grupos dominados, definidos por estos dos factores de segregación, son asimilados para cubrir las funciones inferiores dentro de la jerarquía del empleo. La utilización de modelos complejos, tipo logo-lineal, permiten distinguir, por un lado, los efectos brutos, que reflejan la vivencia de los grupos sexuales y étnicos dentro del mercado de trabajo, y por el otro, los efectos netos, que corresponden a las normas más o menos permanentes, pero menos evidentes que regulan el acceso de estos grupos a los diverses empleos

One-Step Introduction of Two Substituents onto 7-Oxabicyclo[2.2.1]hept-5-en-2-one Derivatives via Radical Phenylselanyl-Group Transfer Reactions

Radical-mediated phenylselanyl-group transfer reactions have been used to introduce simultaneously substituents at the C(6)-endo- and C(5)-exo-positions of 7-oxabicyclo[2.2.1]hept-5-en-2-one derivatives. The key steps are a radical addition to a silyl ketene acetal and the cyclization of a 1-alkoxy-substituted ester radical

Conceptualizing human resilience in the face of the global epidemiology of cyber attacks

Computer security is a complex global phenomenon where different populations interact, and the infection of one person creates risk for another. Given the dynamics and scope of cyber campaigns, studies of local resilience without reference to global populations are inadequate. In this paper we describe a set of minimal requirements for implementing a global epidemiological infrastructure to understand and respond to large-scale computer security outbreaks. We enumerate the relevant dimensions, the applicable measurement tools, and define a systematic approach to evaluate cyber security resilience. From the experience in conceptualizing and designing a cross-national coordinated phishing resilience evaluation we describe the cultural, logistic, and regulatory challenges to this proposed public health approach to global computer assault resilience. We conclude that mechanisms for systematic evaluations of global attacks and the resilience against those attacks exist. Coordinated global science is needed to address organised global ecrime

Exploratory cost-effectiveness analysis of cardiac resynchronization therapy with systematic device optimization vs. standard (non-systematic) optimization: A multinational economic evaluation

Background: Recent studies provide evidence of improved clinical benefits associated with cardiac resynchronization therapy (CRT) optimization. Our analysis explores the cost-effectiveness of systematically optimized (SO, 3 times a year) vs. non-systematically optimized (NSO, less than 3 times a year) CRT, whatever the echo optimization method used (manual or SonR® automatic). A longitudinal cohort model was developed to predict clinical and economic outcomes for SO vs. NSO strategies over 5 years. The analysis was performed from the payer perspective. Data from CLEAR study post-hoc analysis was used with 199 pts with CRT pacemaker (CRT-P). The main economic outcome measure was incremental cost-effectiveness (ICER) expressed as cost per Quality Adjusted Life Years (QALY) gained. To assess the impact of data uncertainty, a sensitivity analysis was performed. The model also predicts outcomes for the two optimization strategies for CRT-D therapy vs. optimal medical treatment (OPT). Results: At 1 year, ICERs for SO CRT vs. NSO CRT-P range between € 22,226 (Spain) and € 26,977 (Italy). Therefore, on the basis of a Willingness-To-Pay of €30,000 per QALY, the SO method develops into a cost effective strategy from 1 year, onwards. These favorable outcomes are supported by the sensitivity analysis. Systematic optimization of CRT-D might also improve the cost-effectiveness of this device therapy by 27 % to 30 % dependent on the country analyzed, at 5 years. Conclusions: Our economic evaluation shows promising health economic benefits associated with SO CRT. These preliminary findings need further confirmation

An Efficient Numerical Technique to Predict Phase Responses of Reconfigurable Reflectarray Cells with Mutual Coupling

International audienceThis paper presents a numerical technique to predict realistic phase responses of active cells within a reflectarray. The phase responses of an active cell are determined as a function of the states of the neighboring cells. The phase probability distributions are computed and realistic phase responses are then evaluated. A synthesis application is presented in order to highlight the interest of the realistic phase responses

Global technique analysis for reconfigurable reflectarray antennas

International audienceThis paper focuses on the simulation of reconfigurable reflectarrays. A new method combining the 'surrounded-cell' approach and the compression method is presented. The method considers the real environment of the radiated elements and it only requires one lightweight electromagnetic simulation for the whole reflectarray

Sensory-motor deficits and neurofilament disorganization in gigaxonin-null mice

International audienceABSTRACT: BACKGROUND: Giant Axonal Neuropathy (GAN) is a fatal neurodegenerative disorder with early onset characterized by a severe deterioration of the peripheral and central nervous system, involving both the motor and sensory tracts and leading to ataxia, speech defect and intellectual disabilities. The broad deterioration of the nervous system is accompanied by a generalized disorganization of the intermediate filaments, including neurofilaments in neurons, but the implication of this defect in disease onset or progression remains unknown. The identification of gigaxonin, the substrate adaptor of an E3 ubiquitin ligase, as the defective protein in GAN allows us to now investigate the crucial role of the gigaxonin-E3 ligase in sustaining neuronal and intermediate filament integrity. To study the mechanisms controlled by gigaxonin in these processes and to provide a relevant model to test the therapeutic approaches under development for GAN, we generated a Gigaxonin-null mouse by gene targeting. RESULTS: We investigated for the first time in Gigaxonin-null mice the deterioration of the motor and sensory functions over time as well as the spatial disorganization of neurofilaments. We showed that gigaxonin depletion in mice induces mild but persistent motor deficits starting at 60 weeks of age in the 129/SvJ-genetic background, while sensory deficits were demonstrated in C57BL/6 animals. In our hands, another gigaxonin-null mouse did not display the early and severe motor deficits reported previously. No apparent neurodegeneration was observed in our knock-out mice, but dysregulation of neurofilaments in proximal and distal axons was massive. Indeed, neurofilaments were not only more abundant but they also showed the abnormal increase in diameter and misorientation that are characteristics of the human pathology. CONCLUSIONS: Together, our results show that gigaxonin depletion in mice induces mild motor and sensory deficits but recapitulates the severe neurofilament dysregulation seen in patients. Our model will allow investigation of the role of the gigaxonin-E3 ligase in organizing neurofilaments and may prove useful in understanding the pathological processes engaged in other neurodegenerative disorders characterized by accumulation of neurofilaments and dysfunction of the Ubiquitin Proteasome System, such as Amyotrophic Lateral Sclerosis, Huntington's, Alzheimer's and Parkinson's diseases

e-Flooding: Crisis Management through Two Temporal Loops

Floods, particularly fast ones, are recurrent natural disasters with a large impact on people and infrastructures. In order to mitigate their impact most countries created regulatory frameworks to coordinate the large number of actors participating to the response of these crises. Several levels from rescue to infrastructure restoration are involved. This article proposes to improve the management of risk and resilience in areas subject to flash floods. The innovative autonomic approach presented in this article is twofold: A short-term feedback loop using a large range of information to help managing the current flood; A long-term feedback loop aiming at improving the resilience of the area to reduce the impact of future crises. The originality of these two loops consists in their link which helps improving the quality of both by feeding each other. This article also describes a scenario showing several benefits of the proposed approach

Development, characterization and modeling of interfaces for high efficiency silicon heterojunction solar cells

L interface entre le silicium amorphe (a-Si:H) et le silicium cristallin (c-Si) est un constituent clés de cellules solaires à haut rendement reposant sur des procédés à basse température. Trois propriétés de l interface déterminent le rendement des cellules solaires à hétérojonction de silicium: les décalages de bandes entre a-Si:H et c-Si, les défauts d interface et la courbure de bande dans c-Si. Ces trois aspects sont traités dans ces travaux de thèse.Dans un premier un temps, un calcul analytique de la courbure de bande dans c-Si est développé. Il repose sur l approximation d une densité d état (DE) constante dans la bande interdite de a-Si:H. L influence des principaux paramètres de la structure sur la courbure de bande est étudiée : décalage de bande, densité d état dans a-Si:H, défaut d interface, etc. La présence d un effet de confinement quantique est discutée. Grâce à une comparaison entre ces calculs et des mesures de conductance planaire en fonction de la température sur des structures (p)a-Si:H/(n)c-Si et (n)a-Si:H/(p)c-Si, les décalages de bande de valence et de conduction ont pu être estimés à 0.36 eV et 0.15 eV respectivement. En outre, il est montré que le décalage de la bande de valence est indépendant de la température, alors que le décalage de la bande de conduction suit les évolutions des bandes interdites de c-Si et a-Si:H. Ces mesures tendent à prouver que le branch point dans a-Si:H est indépendant du dopage.Ensuite, les calculs analytiques sont approfondis pour prendre en compte différents aspects de la structure complète incorporée dans les cellules : contact avec un oxyde transparent conducteur, présence d une couche de a-Si:H non-dopée à l interface. A l aide de simulations numériques et à la lumière de mesures de conductance planaire conjuguées à des mesures de la qualité de passivation de l interface, des pistes pour optimiser les cellules à hétérojonction sont commentées. En particulier, il est montré qu un optimum doit être trouvé entre une bonne passivation et une courbure de bande suffisante. Ceci peut être accompli par un réglage fin des propriétés de la couche tampon (épaisseur, dopage), du contact (travail de sortie élevé) et de l émetteur (p)a-Si:H (densité de défauts et épaisseur). En particulier, un émetteur avec une DE importante conduit paradoxalement à de meilleures performances.Enfin, un nouveau type d interface a été développé. La surface de c-Si a été oxydée volontairement dans de l eau pure dé-ionisée à 80 C avant le dépôt de (p)a-Si:H afin d obtenir une structure (p)a-Si:H/SiO2/(n)c-Si. A l aide d un modèle de courant par effet tunnel implémenté dans le logiciel de simulation numérique AFORS-HET, l effet d une couche à grande bande interdite (comme c est le cas pour SiO2) sur les performances de cellules est étudié : le facteur de forme et le courant de court-circuit sont extrêmement réduits. En revanche, une couche de SiO2 n a que peu d impact sur les propriétés optiques de la structure. Expérimentalement, les échantillons réalisés montrent une qualité de passivation à mi-chemin entre le cas sans couche tampon et le cas avec (i)a-Si:H : ceci est expliqué par la présence d une charge fixe négative dans l oxyde. La courbure de bande dans c-Si est moins affectée par la présence d une couche d oxyde que d une couche de (i)a-Si:H. Les cellules solaires réalisées démontrent que le concept a le potentiel d aboutir à de hauts rendements : sur des structures non-optimisées, une tension de court-circuit supérieure à 650 mV a été démontrée, alors que l oxyde ne semble pas limiter le transport de charge.The interface between amorphous silicon (a-Si:H) and crystalline silicon (c-Si) is the building block of high efficiency solar cells based on low temperature fabrication processes. Three properties of the interface determine the performance of silicon heterojunction solar cells: band offsets between a-Si:H and c-Si, interface defects and band bending in c-Si. These three points are addressed in this thesis.First, an analytical model for the calculation of the band bending in c-Si is developed. It assumes a constant density of states (DOS) in the a-Si:H band gap. The influence of most parameters of the structure on the band bending is studied: band offsets, DOS in a-Si:H, interface defects, etc. The presence of quantum confinement at the interface is discussed. Analytical calculations and temperature dependent planar conductance measurements are compared such that the band offsets on both (p)a-Si:H/(n)c-Si and (n)a-Si:H/(p)c-Si can be estimated: the valence band offset amounts 0.36 eV while the conduction band offset is 0.15 eV. In addition, it is shown that the valence band offset is independent of temperature whereas the conduction band offset follows the evolutions of c-Si and a-Si:H band gaps with temperature. A discussion of these results in the frame of the branch point theory for band line-up leads to the conclusion that the branch point in a-Si:H is independent of the doping.Then, analytical calculations are developed further to take into account the real solar cell structure where the a-Si:H/c-Si structure is in contact with a transparent conductive oxide and an undoped buffer layer is present at the interface. Measurements of the planar conductance and of the interface passivation quality are interpreted in the light of analytical calculations and numerical simulations to open a way towards a method for the optimization of silicon heterojunction solar cells. It is particularly shown that a trade-off has to be found between a good passivation quality and a significant band bending. This can be realized by tuning the buffer layer properties (thickness, doping), the TCO-contact (high work function) and the emitter (defect density and thickness). Interestingly, an emitter with a high DOS leads to better cell performances.Finally, a new type of interface has been developed, that was not applied to heterojunction solar cells so far. The c-Si surface has been oxidized in deionized water at 80 C before the (p)a-Si:H emitter deposition such that (p)a-Si:H/SiO2/(n)c-Si structures were obtained. A tunneling current model has been developed, implemented in the 1D numerical device simulator AFORS-HET and used to study the effect of a wide band gap interfacial layer (as it is the case for SiO2) on cell performance: the fill-factor and the short-circuit current are dramatically reduced for thick and high barriers. However, a SiO2 layer has only little impact on optical properties. Fabricated samples show a passivation quality halfway between samples with no buffer layer and with an (i)a-Si:H buffer layer: this is explained by the presence of a negative fixed charge in the oxide. The band bending in (n)c-Si is higher with an oxide layer than with an (i)a-Si:H buffer layer. Solar cells demonstrate that this new concept has the potential to achieve high power conversion efficiencies: for non-optimized structures, an open-circuit voltage higher than 650 mV has been demonstrated, while the oxide does not seem to create a barrier to charge transport.PARIS11-SCD-Bib. électronique (914719901) / SudocSudocFranceF