Investigating the Effect of Group Process on Depression for LGBTQIA Adolescents

This quantitative study implements secondary data to analyze the impact of a psychoeducational group on reported depression scores from teenagers identifying on the LGBTQIA spectrum. Teenagers participating in this group completed Beck’s Depression Inventory, 2nd Edition (BDI II) before entering the group then completed another BDI II after completing the 12 week group. A paired samples t-test was used to investigate the relationship between reported depression scores and participation in the group. Results corroborated previous findings that group participation impacts reported depression scores, but further research is needed to determine specific causation of the changes in scores

Imaging the effect of acoustically induced cavitation bubbles on the generation of shear-waves by ultrasonic radiation force

In soft solids, the acoustic radiation force on bubbles generates a shear wave. This bubble-based shear wave can be imaged using high frame rate ultrasound imaging. We report here an experiment where cavitation is induced in a tissue mimicking material by an ultrasonic tone-burst excitation, which also pushes the bubbles. The generated shear wave was imaged and the energy backscattered by the bubbles measured. The tone burst excitation was iterated at the same location and the decrease of both the amplitude of the particle velocity induced by the shear wave and the backscattered energy was shown. Data treatment to extract the bubbles' contribution to this two quantities, and a simple theoretical model allowed us to point out their linear dependence.http://deepblue.lib.umich.edu/bitstream/2027.42/84304/1/CAV2009-final129.pd

Resonant tunneling diodes as sources for millimeter and submillimeter wavelengths

High-quality Resonant Tunneling Diodes have been fabricated and tested as sources for millimeter and submillimeter wavelengths. The devices have shown excellent I-V characteristics with peak-to-valley current ratios as high as 6:1 and current densities in the range of 50-150 kA/cm(exp 2) at 300 K. Used as local oscillators, the diodes are capable of state of the art output power delivered by AlGaAs-based tunneling devices. As harmonic multipliers, a frequency of 320 GHz has been achieved by quintupling the fundamental oscillation of a klystron source

Acoustically induced and controlled micro-cavitation bubbles as active source for transcranial adaptive focusing

The skull bone is a strong aberrating medium for ultrasound in the low MHz range. Brain treatment with High Intensity Focused Ultrasound (HIFU) can however be achieved through the skull by multichannel arrays using an adaptive focusing technique. Time-reversal is a robust adaptive technique for correction of aberrations. It achieves moreover a matched filter and then allows the optimal energy concentration for thermal therapy. Nevertheless, this method requires a reference signal sent by a source embedded in brain tissues. Acoustically generated cavitation bubbles are active acoustic sources which can be remotely generated. Therefore, they are suited for this non-invasive time reversal aberration correction. We report here in vitro experiments where micro-cavitation was induced transcranially in agar gel at targeted positions using a coarse aberration correction either obtained from CT-scan based simulations or conventional steering. The bubbles' ultrasonic signature received by the array were then successfully used to optimally focus at the designated locations.http://deepblue.lib.umich.edu/bitstream/2027.42/84308/1/CAV2009-final134.pd

Diamond power devices: state of the art, modelling, figures of merit and future perspective

Abstract: With its remarkable electro-thermal properties such as the highest known thermal conductivity (~22 W cm−1∙K−1 at RT of any material, high hole mobility (>2000 cm2 V−1 s−1), high critical electric field (>10 MV cm−1), and large band gap (5.47 eV), diamond has overwhelming advantages over silicon and other wide bandgap semiconductors (WBGs) for ultra-high-voltage and high-temperature (HT) applications (>3 kV and >450 K, respectively). However, despite their tremendous potential, fabricated devices based on this material have not yet delivered the expected high performance. The main reason behind this is the absence of shallow donor and acceptor species. The second reason is the lack of consistent physical models and design approaches specific to diamond-based devices that could significantly accelerate their development. The third reason is that the best performances of diamond devices are expected only when the highest electric field in reverse bias can be achieved, something that has not been widely obtained yet. In this context, HT operation and unique device structures based on the two-dimensional hole gas (2DHG) formation represent two alternatives that could alleviate the issue of the incomplete ionization of dopant species. Nevertheless, ultra-HT operations and device parallelization could result in severe thermal management issues and affect the overall stability and long-term reliability. In addition, problems connected to the reproducibility and long-term stability of 2DHG-based devices still need to be resolved. This review paper aims at addressing these issues by providing the power device research community with a detailed set of physical models, device designs and challenges associated with all the aspects of the diamond power device value chain, from the definition of figures of merit, the material growth and processing conditions, to packaging solutions and targeted applications. Finally, the paper will conclude with suggestions on how to design power converters with diamond devices and will provide the roadmap of diamond device development for power electronics

Reaction Networks For Interstellar Chemical Modelling: Improvements and Challenges

We survey the current situation regarding chemical modelling of the synthesis of molecules in the interstellar medium. The present state of knowledge concerning the rate coefficients and their uncertainties for the major gas-phase processes -- ion-neutral reactions, neutral-neutral reactions, radiative association, and dissociative recombination -- is reviewed. Emphasis is placed on those reactions that have been identified, by sensitivity analyses, as 'crucial' in determining the predicted abundances of the species observed in the interstellar medium. These sensitivity analyses have been carried out for gas-phase models of three representative, molecule-rich, astronomical sources: the cold dense molecular clouds TMC-1 and L134N, and the expanding circumstellar envelope IRC +10216. Our review has led to the proposal of new values and uncertainties for the rate coefficients of many of the key reactions. The impact of these new data on the predicted abundances in TMC-1 and L134N is reported. Interstellar dust particles also influence the observed abundances of molecules in the interstellar medium. Their role is included in gas-grain, as distinct from gas-phase only, models. We review the methods for incorporating both accretion onto, and reactions on, the surfaces of grains in such models, as well as describing some recent experimental efforts to simulate and examine relevant processes in the laboratory. These efforts include experiments on the surface-catalysed recombination of hydrogen atoms, on chemical processing on and in the ices that are known to exist on the surface of interstellar grains, and on desorption processes, which may enable species formed on grains to return to the gas-phase.Comment: Accepted for publication in Space Science Review

A 380 GHz SIS receiver using Nb/AlO(x)/Nb junctions for a radioastronomical balloon-borne experiment: PRONAOS

The superheterodyne detection technique used for the spectrometer instrument of the PRONAOS project will provide a very high spectral resolution (delta nu/nu = 10(exp -6)). The most critical components are those located at the front-end of the receiver: their contribution dominates the total noise of the receiver. Therefore, it is important to perform accurate studies for specific components, such as mixers and multipliers working in the submillimeter wave range. Difficulties in generating enough local oscillator (LO) power at high frequencies make SIS mixers very desirable for operation above 300 GHz. The low LO power requirements and the low noise temperature of these mixers are the primary reason for building an SIS receiver. This paper reports the successful fabrication of small (less than or equal to 1 sq micron) Nb/Al-O(x)/Nb junctions and arrays with excellent I-V characteristics and very good reliability, resulting in a low noise receiver performance measured in the 368/380 GHz frequency range

Potential barrier heights at metal on oxygen-terminated diamond interfaces

International audienceElectrical properties of metal-semiconductor (M/SC) and metal/oxide/SC structures built with Zr or ZrO_2 deposited on oxygen-terminated surfaces of (001)-oriented diamond films, comprising a stack of lightly p-doped diamond on a heavily doped layer itself homoepitaxially grown on a Ib substrate, are investigated experimentally and compared to different models. In Schottky barrier diodes, the interfacial oxide layer evidenced by high resolution transmission electron microscopy and electron energy losses spectroscopy before and after annealing, and barrier height inhomogeneities accounts for the measured electrical characteristics until flat bands are reached, in accordance with a model which generalizes that of R.T. Tung [Phys. Rev. B 45, 13509 (1992)] and permits to extract physically meaningful parameters of the three kinds of interface: (a) unannealed ones; (b) annealed at 350°C; (c) annealed at 450°C, with characteristic barrier heights of 2.2-2.5 V in case (a) while as low as 0.96 V in case (c). Possible models of potential barriers for several metals deposited on well defined oxygen-terminated diamond surfaces are discussed and compared to experimental data. It is concluded that interface dipoles of several kinds present at these compound interfaces and their chemical evolution due to annealing are the suitable ingredients able to account for the Mott-Schottky behavior when the effect of the metal work function is ignored, and to justify the reverted slope observed regarding metal work function, in contrast to the trend always reported for all other metal-semiconductor interfaces.Les propriétés électriques et structurales d'interfaces métal/diamant et métal/oxyde/diamant où le métal est le Zirconium et le semi-conducteur comporte un empilement de couches faiblement et fortement dopées au bore sur substrat Ib, sont étudiées expérimentalement et comparées à différents modèles. Dans le barrière de Schottky, une inter-couche d'oxyde d'environ 2 couches atomiques, mise en évidence par diverses techniques de microscopie électronique à transmission, est présente et ajoutée à la présence d'inhomogénéités de barrière de potentiel, est corrélée aux propriétés électriques simulées par un modèle qui généralise celui de R. T. Tung [Phys. Rev. B 45, 13509 (1992)] . Les paramètres physiquement caractéristiques des interfaces (a) non recuites, (b) recuite à 350°C et (c) recuite à 450°C peuvent ainsi être extraits, en particulier des hauteurs de barrière de 2.2-2.5 V dans le cas (a) et aussi basses que 0.96 V dans le cas (c). Les modèles possibles de fixation du niveau de Fermi aux interfaces métal/diamant sont examinés et confrontés aux données récemment publiées pour différents métaux sur la surface oxygénée du diamant. On conclue que les quantités physiques judicieuses sont l'affinité électronique du diamant, fonction de son état de surface, pour justifier l'allure générale conforme au modèle de Mott-Schottky et la force du dipole d'interface, dépendante des liaisons chimiques à l'interface, pour expliquer la pente de la variation de la barrière en fonction du travail de sortie du métal, qui est inversée par rapport à tous les autres semi-conducteurs

Electronic and physico-chemical properties of nanmetric boron delta-doped diamond structures

Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white beam topography. The chemical composition and thickness of these so-called deltadoped structures have been studied by secondary ion mass spectrometry, transmission electron microscopy, and spectroscopic ellipsometry. Temperature-dependent Hall effect and four probe resistivity measurements have been performed on mesa-patterned Hall bars. The temperature dependence of the hole sheet carrier density and mobility has been investigated over a broad temperature range (6K<T<450 K). Depending on the sample, metallic or non-metallic behavior was observed. A hopping conduction mechanism with an anomalous hopping exponent was detected in the non-metallic samples. All metallic delta-doped layers exhibited the same mobility value, around 3.660.8 cm2/Vs, independently of the layer thickness and the substrate type. Comparison with previously published data and theoretical calculations showed that scattering by ionized impurities explained only partially this low common value. None of the delta-layers showed any sign of confinement-induced mobility enhancement, even for thicknesses lower than 2 nm.14 page