Effects of Cd1-xZnxS alloy composition and post-deposition air anneal on ultra-thin CdTe solar cells produced by MOCVD

Ultra-thin CdTe:As/Cd1-xZnxS photovoltaic solar cells with an absorber thickness of 0.5 μm were deposited by metal-organic chemical vapour deposition on indium tin oxide coated boro-aluminosilicate substrates. The Zn precursor concentration was varied to compensate for Zn leaching effects after CdCl2 activation treatment. Analysis of the solar cell composition and structure by X-ray photoelectron spectroscopy depth profiling and X-ray diffraction showed that higher concentrations of Zn in the Cd1-xZnxS window layer resulted in suppression of S diffusion across the CdTe/Cd1-xZnxS interface after CdCl2 activation treatment. Excessive Zn content in the Cd1-xZnxS alloy preserved the spectral response in the blue region of the solar spectrum, but increased series resistance for the solar cells. A modest increase in the Zn content of the Cd1-xZnxS alloy together with a post-deposition air anneal resulted in an improved blue response and an enhanced open circuit voltage and fill factor. This device yielded a mean efficiency of 8.3% over 8 cells (0.25 cm2 cell area) and best cell efficiency of 8.8%

Data on dopant characteristics and band alignment of CdTe cells with and without a ZnO highly-resistive-transparent buffer layer

Photovoltaic enhancement of cadmium telluride (CdTe) thin film solar cells using a 50 nm thick, atomic-layer-deposited zinc oxide (ZnO) buffer film was reported in “Enhancement of the photocurrent and efficiency of CdTe solar cells suppressing the front contact reflection using a highly-resistive ZnO buffer layer” (Kartopu et al., 2019) [1].Data presented here are the dopant profiles of two solar cells prepared side-by-side, one with and one without the ZnO highly resistive transparent (HRT) buffer, which displayed an open-circuit potential (Voc) difference of 25 mV (in favor of the no-buffer device), as well as their simulated device data. The concentration of absorber dopant atoms (arsenic) was measured using the secondary ion mass spectroscopy (SIMS) method, while the density of active dopants was calculated from the capacitance-voltage (CV) measurements. The solar cell simulation data was obtained using the SCAPS software, a one-dimensional solar cell simulation programme. The presented data indicates a small loss (around 20 mV) of Voc for the HRT buffered cells

Enhancement of the photocurrent and efficiency of CdTe solar cells suppressing the front contact reflection using a highly-resistive ZnO buffer layer

We report on the effects of using an atomic layer deposited ZnO transparent buffer layer with > 106 Ω cm resistivity on the performance of CdZnS/CdTe solar cells grown by metalorganic chemical vapour deposition (MOCVD). The buffer film thickness is adjusted by optical modelling to suppress the reflection losses at the front contact. A clear improvement, up to 1.8% in conversion efficiency, was obtained in comparison to reference devices without the ZnO buffer layer, thanks to the enhancement of the current density (Jsc) and fill factor (FF). Device spectral response showed improved collection for most of the visible region. Reflectance measurements confirmed that the ZnO film reduced the optical reflectance around the transparent front contact. This effect permitted light management through the front contact leading to an improvement of the Jsc and hence the photovoltaic conversion efficiency. These results are intriguing since the literature on CdTe solar cells did not previously report improvement to the photocurrent and device response through controlling the highly-resistive transparent buffer layer

Study of thin film poly-crystalline CdTe solar cells presenting high acceptor concentrations achieved by in-situ arsenic doping

Doping of CdTe using Group-V elements (As, P, and Sb) has gained interest in pursuit of increasing the cell voltage of CdTe thin film solar devices. Studies on bulk CdTe crystals have shown that much higher acceptor concentration than the traditional copper treatment is possible with As, P or Sb, enabled by high process temperature and/or rapid thermal quenching under Cd overpressure. We report a comprehensive study on in-situ As doping of poly-crystalline CdTe solar cells by MOCVD, whereby high acceptor densities, approaching 3 × 1016 cm−3 were achieved at low growth temperature of 390 °C. No As segregation could be detected at grain boundaries, even for 1019 As cm−3. A shallow acceptor level (+0.1 eV) due to AsTe substitutional doping and deep-level defects were observed at elevated As concentrations. Devices with variable As doping were analysed. Narrowing of the depletion layer, enhancement of bulk recombination, and reduction in device current and red response, albeit a small near infrared gain due to optical gap reduction, were observed at high concentrations. Device modelling indicated that the properties of the n-type window layer and associated interfacial recombination velocity are highly critical when the absorber doping is relatively high, demonstrating a route for obtaining high cell voltage

Fabrication of vertically aligned Pd nanowire array in AAO template by electrodeposition using neutral electrolyte

A vertically aligned Pd nanowire array was successfully fabricated on an Au/Ti substrate using an anodic aluminum oxide (AAO) template by a direct voltage electrodeposition method at room temperature using diluted neutral electrolyte. The fabrication of Pd nanowires was controlled by analyzing the current–time transient during electrodeposition using potentiostat. The AAO template and the Pd nanowires were characterized by scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) methods and X-Ray diffraction (XRD). It was observed that the Pd nanowire array was standing freely on an Au-coated Ti substrate after removing the AAO template in a relatively large area of about 5 cm2, approximately 50 nm in diameter and 2.5 μm in length with a high aspect ratio. The nucleation rate and the number of atoms in the critical nucleus were determined from the analysis of current transients. Pd nuclei density was calculated as 3.55 × 108 cm−2. Usage of diluted neutral electrolyte enables slower growing of Pd nanowires owing to increase in the electrodeposition potential and thus obtained Pd nanowires have higher crystallinity with lower dislocations. In fact, this high crystallinity of Pd nanowires provides them positive effect for sensor performances especially

Microstructural and photoluminescence characterisation of germanium and silicon-germanium nanocrystalline materials

The discovery of the strong room temperature visible photoluminescence (PL) emission from porous Si in 1990 has been the catalyst for much of the recent study on the visible PL emitting semiconductor nanocrystalline materials. Silicon, an indirect bandgap semiconductor, in the form of nanoparticles is thought to emit strong visible light due to quantum confinement effects and, in the near future, will replace GaAs (and the other direct bandgap III-IV semiconductors) as for the light emitting devices such as lasers. On the other hand, mainly due to its much larger exciton Bohr radius, Ge, in the form of nanocrystals, is expected show more pronounced quantum confinement effects compared to Si nanocrystals. SiGe alloys also constitute a more attractive material than Si in terms of both industrial applications and fundamental research: the lifetime of the 'porous Si-like' PL of porous SiGe is observed to be approximately two orders of magnitude faster than that of porous Si. Moreover, the bandgap of Si-Ge alloys can be intentionally varied between those of pure Si and Ge via the alloy composition. In this study, an investigation has been made of the microstructural properties of visible PL Group IV nanostructures (SiGe and Ge) that have been rather much less studied in the literature, for example, in comparison to Si nanocrystals. For the first time in the literature the confinement of phonons in SiGe nanocrystals has been shown, in anodised porous SiGe films, and variations in the film composition were estimated utilising Raman spectroscopy. Methods such as stain etching, ion-implantation, and spark processing, were employed to synthesise Ge nanostructures. Particle sizes were usually estimated by modelling the Raman spectra in line with a phonon confinement model. Properties of 2-10 nm Ge nanostructures, ranging in structure from partially amorphous to crystalline, and in various environments, e.g. oxide matrices, were studied. Typical PL spectra were observed from these samples. These spectra were determined to be originating either due to Ge nanocrystals or other chemical origins, such as defects in GeO sub x S or defects in host matrices (e.g. SiO sub 2 , GeO sub x). It is recommended that samples with a wider range of particle sizes must be prepared, preferably 'oxide-free', using the first two methods, and characterised optically from near UV to near IR in order to observe clearly the size dependence of the PL emission from Ge nanocrystals