Boosting of ALVAC-SIV vaccine-primed macaques with the CD4-SIVgp120 fusion protein elicits antibodies to V2 associated with a decreased risk of SIVmac251 acquisition

The recombinant ALVAC vaccine coupled with the monomeric gp120/alum protein have decreased the risk of HIV and SIV acquisition. Ab responses to the V1/V2 regions have correlated with a decreased risk of virus acquisition in both humans and macaques. We hypothesized that the breadth and functional profile of Abs induced by an ALVAC/envelope protein regimen could be improved by substituting the monomeric gp120 boost, with the full-length single-chain (FLSC) protein. FLSC is a CD4-gp120 fusion immunogen that exposes cryptic gp120 epitopes to the immune system. We compared the immunogenicity and relative efficiency of an ALVAC-SIV vaccine boosted either with bivalent FLSC proteins or with monomeric gp120 in alum. FLSC was superior to monomeric gp120 in directing Abs to the C3 a2 helix, the V5 loop, and the V3 region that contains the putative CCR5 binding site. In addition, FLSC boosting elicited significantly higher binding Abs to V2 and increased both the Ab-dependent cellular cytotoxicity activity and the breadth of neutralizing Abs. However, the FLSC vaccine regimen demonstrated only a trend in vaccine efficacy, whereas the monomeric gp120 regimen significantly decreased the risk of SIVmac251 acquisition. In both vaccine regimens, anti-V2 Abs correlated with a decreased risk of virus acquisition but differed with regard to systemic or mucosal origin. In the FLSC regimen, serum Abs to V2 correlated, whereas in the monomeric gp120 regimen, V2 Abs in rectal secretions, the site of viral challenge, were associated with efficacy. The Journal of Immunology, 2016, 197: 2726-2737

The On-orbit Calibrations for the Fermi Large Area Telescope

The Large Area Telescope (LAT) on--board the Fermi Gamma ray Space Telescope began its on--orbit operations on June 23, 2008. Calibrations, defined in a generic sense, correspond to synchronization of trigger signals, optimization of delays for latching data, determination of detector thresholds, gains and responses, evaluation of the perimeter of the South Atlantic Anomaly (SAA), measurements of live time, of absolute time, and internal and spacecraft boresight alignments. Here we describe on orbit calibration results obtained using known astrophysical sources, galactic cosmic rays, and charge injection into the front-end electronics of each detector. Instrument response functions will be described in a separate publication. This paper demonstrates the stability of calibrations and describes minor changes observed since launch. These results have been used to calibrate the LAT datasets to be publicly released in August 2009.Comment: 60 pages, 34 figures, submitted to Astroparticle Physic

Soft error immune GaAs circuit technologies

The article of record as published may be found at http://dx.doi.org/10.1109/GAAS.1996.567901Cosmic radiation induced soft errors present a major difficulty for space applications that utilize digital GaAs circuits and systems. Techniques to reduce soft error sensitivity by 5 orders of magnitude or more, to sufficient levels for safe implemen[ta]tion of GaAs ICs in space applications are presented. These results show that the need for redundancy and error correction is eliminated. Space systems will benefit by reduced power and area requirements, plus a substantial improvement in system performance over present radiation hardened silicon-based technologies

Single event upsets in gallium arsenide dynamic logic

The advantages and disadvantages of using gallium arsenide (GaAs) dynamic logic in computers and digital systems are briefly discussed, especially with respect to space applications. A short introduction to the topology and operation of GaAs Two-Phase Dynamic FET Logic (TDFL) circuits is presented. Experiments for testing the SEU sensitivity of GaAs TDFL, using a laser to create charge collection events, are described. Results are used to estimate the heavy-ion, soft error rate for TDFL in a spacecraft in geosynchronous orbit, and the dependence of the SEU sensitivity on clock frequency, clock voltage, and clock phase. Analysis of the data includes a comparison between the SEU sensitivities of TDFL and the more common static form of GaAs logic, Directly Coupled FET Logic (DCFL). This is the first reported SEU testing of GaAs dynamic logic.Non

Effects of low-temperature buffer-layer thickness and growth temperature on the SEE sensitivity of GaAs HIGFET circuits

The article of record as published may be found at http://dx.doi.org/10.1109/23.659049Heavy-ion Single Event Effects (SEE) test results reveal the roles of growth temperature and buffer layer thickness in the use of a low-temperature grown GaAs (LT GaAs) buffer layer for suppressing SEE sensitivity in GaAs HIGFET circuits.U.S. Navy Space and Naval Warfare System

SEU design considerations for MESFETs on LT GaAs

The article of record as published may be found at http://dx.doi.org/10.1109/23.659047IEEE Transactions on Nuclear Science, V. 44, No. 6, pp. 2282-2289, December 1997Computer simulation results are reported on transistor design and single-event charge collection modeling of metal­ semiconductor field effect transistors (MESFETs) fabricated in the Vitesse H-GaAsIII® process on Low Temperature grown (LT) GaAs epitaxial layers. Tradeoffs in Single Event Upset (SEU) immunity and transistor design are discussed. Effects due to active loads and diffusion barriers are examined.U.S. Navy Space and Naval Warfare Systems Comman

Single event upsets in gallium arsenide pseudo-complementary MESFET logic

The article of record as published may be found at https://doi.org/10.1109/23.488786An introduction to gallium arsenide (GaAs) Pseudo-Complementary MESFET Logic (PCML) circuits is presented. PCML was developed to reduce the sensitivity of high-speed GaAs logic to radiation-induced single event upsets (SEUs). Experiments for testing the single-event upset (SEU) sensitivity of GaAs PCML integrated circuits (ICs) are described. The results of the experiments are analyzed. This new type of high-speed, low-power, GaAs logic provides decreased sensitivity to SEUs compared to more traditional circuit designs such as Directly-Coupled FET Logic (DCFL). PCML is fully compatible with existing GaAs E/D MESFET fabrication processes, such as those commonly used to make DCFL

SEU design consideration for MESFETs on LT GaAs

The article of record as published may be found at http://dx.doi.org/101109/23.659047Computer simulation results are reported on transistor design and single-event charge collection modeling of metal-semiconductor field effect transistors (MESFETs) fabricated in the Vitesse H-GaAsIII{reg_sign} process on Low Temperature grown (LT) GaAs epitaxial layers. Tradeoffs in Single Event Upset (SEU) immunity and transistor design are discussed. Effects due to active loads and diffusion barriers are examined