Analysis of the Deep Sub-Micron a-Si:H Thin Film Transistors

The recent developments of high resolution flat panel imagers have prompted interests in fabricating smaller on-pixel transistors to obtain higher fill factor and faster speed. This thesis presents fabrication and modeling of short channel amorphous silicon (a-Si:H) vertical thin film transistors (VTFT). A variety of a-Si:H VTFTs with different channel lengths, from 100 nm to 1 μm, are successfully fabricated using the discussed processing steps. Different structural and electrical characteristics of the fabricated device are measured. The results of I-V and C-V characteristics are comprehensively discussed. The 100 nm channel length transistor performance is diverged from regular long channel TFT characteristics, as the short channel effects become dominant in the device, giving rise to necessity of having a physical model to explain such effects. An above threshold model for a-Si:H VTFT current characteristics is extracted. The transport mechanisms are explained and simulated for amorphous silicon material to be used in the device model. The final model shows good agreement with experimental results. However, we used numerical simulation, run in Medici, to further verify the model validity. Simulation allows us to vary different device and material parameters in order to optimize fabrication process for VTFT. The capacitance behavior of the device is extensively studied alongside with a TFT breakdown discussion

Terahertz Quantum Cascade Lasers: towards high performance operation

Terahertz (THz) frequency range (wavelength of 300-30 μm, frequency of 1-10 THz and photon energy of ~4-40meV), the gap between infrared and microwave electromagnetic waves, have remained relatively unexplored for a long time, due to lack of a high power, coherent, and compact source, as well as the lack of an appropriate detector and the transmission devices. THz wave has recently received considerable attention for potential applications in non-invasive medical imaging, detecting trace of gases in the environment, sensing of organic and biological molecules, security controls, local oscillators for heterodyne receiver systems, free space communication, etc. THz quantum cascade laser (QCL), as the relatively high power and coherent THz radiation source, was demonstrated in 2002. After near a decade of intense research, THz QCLs operate only up to 186K in pulse mode with maximum power of 250 mW at 10 K. This thesis discusses many aspects of theoretical and experimental design considerations for THz QCLs. The objective is to obtain a laser device that emits high powers and works towards the temperatures achievable by thermoelectric coolers. This work includes designing the active gain medium, and the engineering of the waveguide and heat removal structures. A density matrix based model is developed to explain the charge transport and gain mechanism in the intersubband devices, particularly for three well resonant phonon based THz QCLs. The model allows for designing of the optimum and novel active gain mediums that work at higher temperatures. The designed active gain mediums are fabricated using discussed low loss waveguide and efficient heat removal structures. The maximum operating temperatures as high as ~176 K is achieved. Finally a promising lasing scheme based on phonon-photon-phonon emissions is proposed that improves the population inversion and offers high gain peak

A phonon scattering assisted injection and extraction based terahertz quantum cascade laser

A novel lasing scheme for terahertz quantum cascade lasers, based on consecutive phonon-photon-phonon emissions per module, is proposed and experimentally demonstrated. The charge transport of the proposed structure is modeled using a rate equation formalism. An optimization code based on a genetic algorithm was developed to find a four-well design in the $\mathrm{GaAs/Al_{0.25}Ga_{0.75}As}$ material system that maximizes the product of population inversion and oscillator strength at 150 K. The fabricated devices using Au double-metal waveguides show lasing at 3.2 THz up to 138 K. The electrical characteristics display no sign of differential resistance drop at lasing threshold, which suggests - thanks to the rate equation model - a slow depopulation rate of the lower lasing state, a hypothesis confirmed by non-equilibrium Green's function calculations.Comment: 11 pages, 10 figure

A phonon scattering assisted injection and extraction based terahertz quantum cascade laser

A novel lasing scheme for terahertz quantum cascade lasers, based on consecutive phonon-photon-phonon emissions per module, is proposed and experimentally demonstrated. The charge transport of the proposed structure is modeled using a rate equation formalism. An optimization code based on a genetic algorithm was developed to find a four-well design in the $\mathrm{GaAs/Al_{0.25}Ga_{0.75}As}$ material system that maximizes the product of population inversion and oscillator strength at 150 K. The fabricated devices using Au double-metal waveguides show lasing at 3.2 THz up to 138 K. The electrical characteristics display no sign of differential resistance drop at lasing threshold, which suggests - thanks to the rate equation model - a slow depopulation rate of the lower lasing state, a hypothesis confirmed by non-equilibrium Green's function calculations.Comment: 11 pages, 10 figure

Electrically switching transverse modes in high power THz quantum cascade lasers.

The design and fabrication of a high power THz quantum cascade laser (QCL), with electrically controllable transverse mode is presented. The switching of the beam pattern results in dynamic beam switching using a symmetric side current injection scheme. The angular-resolved L-I curves measurements, near-field and far-field patterns and angular-resolved lasing spectra are presented. The measurement results confirm that the quasi-TM(01) transverse mode lases first and dominates the lasing operation at lower current injection, while the quasi-TM(00) mode lases at a higher threshold current density and becomes dominant at high current injection. The near-field and far-field measurements confirm that the lasing THz beam is maneuvered by 25 degrees in emission angle, when the current density changes from 1.9 kA/cm(2) to 2.3 kA/cm(2). A two-dimension (2D) current and mode calculation provides a simple model to explain the behavior of each mode under different bias conditions

A model for a pulsed terahertz quantum cascade laser under optical feedback

Optical feedback effects in lasers may be useful or problematic, depending on the type of application. When semiconductor lasers are operated using pulsed-mode excitation, their behavior under optical feedback depends on the electronic and thermal characteristics of the laser, as well as the nature of the external cavity. Predicting the behavior of a laser under both optical feedback and pulsed operation therefore requires a detailed model that includes laser-specific thermal and electronic characteristics. In this paper we introduce such a model for an exemplar bound-to-continuum terahertz frequency quantum cascade laser (QCL), illustrating its use in a selection of pulsed operation scenarios. Our results demonstrate significant interplay between electro-optical, thermal, and feedback phenomena, and that this interplay is key to understanding QCL behavior in pulsed applications. Further, our results suggest that for many types of QCL in interferometric applications, thermal modulation via low duty cycle pulsed operation would be an alternative to commonly used adiabatic modulation

Silver-based surface plasmon waveguide for terahertz quantum cascade lasers

Terahertz-frequency quantum cascade lasers (THz QCLs) based on ridge waveguides incorporating silver waveguide layers have been investigated theoretically and experimentally, and compared with traditional gold-based devices. The threshold gain associated with silver-, gold- and copper-based devices, and the effects of titanium adhesion layers and top contact layers, in both surface-plasmon and double-metal waveguide geometries, have been analysed. Our simulations show that silver-based waveguides yield lower losses for THz QCLs across all practical operating temperatures and frequencies. Experimentally, QCLs with silver-based surface-plasmon waveguides were found to exhibit higher operating temperatures and higher output powers compared to those with identical but gold-based waveguides. Specifically, for a three-well resonant phonon active region with a scaled oscillator strength of 0.43 and doping density of 6.83 × 10¹⁵ cm‾³, an increase of 5 K in the maximum operating temperature and 40% increase in the output power were demonstrated. These effects were found to be dependent on the active region design, and greater improvements were observed for QCLs with a larger radiative diagonality. Our results indicate that silver-based waveguide structures could potentially enable THz QCLs to operate at high temperatures

The MBE growth and optimization of high performance terahertz frequency quantum cascade lasers

The technique of molecular beam epitaxy has recently been used to demonstrate the growth of terahertz frequency GaAs/AlGaAs quantum cascade lasers (QCL) with Watt-level optical output powers. In this paper, we discuss the critical importance of achieving accurate layer thicknesses and alloy compositions during growth, and demonstrate that precise growth control as well as run-to-run growth reproducibility is possible. We also discuss the importance of minimizing background doping level in maximizing QCL performance. By selecting high-performance active region designs, and optimizing the injection doping level and device fabrication, we demonstrate total optical (two-facet) output powers as high as 1.56 W

Quasi-continuous frequency tunable terahertz quantum cascade lasers with coupled cavity and integrated photonic lattice

We demonstrate quasi-continuous tuning of the emission frequency from coupled cavity terahertz frequency quantum cascade lasers. Such coupled cavity lasers comprise a lasing cavity and a tuning cavity which are optically coupled through a narrow air slit and are operated above and below the lasing threshold current, respectively. The emission frequency of these devices is determined by the Vernier resonance of longitudinal modes in the lasing and the tuning cavities, and can be tuned by applying an index perturbation in the tuning cavity. The spectral coverage of the coupled cavity devices have been increased by reducing the repetition frequency of the Vernier resonance and increasing the ratio of the free spectral ranges of the two cavities. A continuous tuning of the coupled cavity modes has been realized through an index perturbation of the lasing cavity itself by using wide electrical heating pulses at the tuning cavity and exploiting thermal conduction through the monolithic substrate. Single mode emission and discrete frequency tuning over a bandwidth of 100 GHz and a quasi-continuous frequency coverage of 7 GHz at 2.25 THz is demonstrated. An improvement in the side mode suppression and a continuous spectral coverage of 3 GHz is achieved without any degradation of output power by integrating a π-phase shifted photonic lattice in the laser cavity