Pulse characterization of optically triggered SiC thyristors

International audienceThis paper deals with the pulse capabilities of 4H-SiC optically triggered thyristors. The device structure and the fabrication process are presented. The results of pulse characterizations are shown. Two types of current pulses were used, a short (pulse width of 10 μs) and a long (pulse width of 650 μs). Peak current densities of 17 kA.cm -2 and 4 kA.cm -2 were attained with short and long pulses respectively. The failures and degradation caused by these experiments are also shown in this paper

Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection

International audienceAvalanche diodes have been fabricated on 4H-SiC substrate. These diodes show an abrupt avalanche voltage of about 59 V which corresponds to the calculated theoretical one using our previously determined impact ionization coefficients. This avalanche voltage increases by as small as 3.7 mV/K over the investigated temperature range (150K-420K)

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2021 Taxonomic update of phylum Negarnaviricota (Riboviria: Orthornavirae), including the large orders Bunyavirales and Mononegavirales.

Correction to: 2021 Taxonomic update of phylum Negarnaviricota (Riboviria: Orthornavirae), including the large orders Bunyavirales and Mononegavirales. Archives of Virology (2021) 166:3567–3579. https://doi.org/10.1007/s00705-021-05266-wIn March 2021, following the annual International Committee on Taxonomy of Viruses (ICTV) ratification vote on newly proposed taxa, the phylum Negarnaviricota was amended and emended. The phylum was expanded by four families (Aliusviridae, Crepuscuviridae, Myriaviridae, and Natareviridae), three subfamilies (Alpharhabdovirinae, Betarhabdovirinae, and Gammarhabdovirinae), 42 genera, and 200 species. Thirty-nine species were renamed and/or moved and seven species were abolished. This article presents the updated taxonomy of Negarnaviricota as now accepted by the ICTV.This work was supported in part through Laulima Government Solutions, LLC prime contract with the US National Institute of Allergy and Infectious Diseases (NIAID) under Contract No. HHSN272201800013C. J.H.K. performed this work as an employee of Tunnell Government Services (TGS), a subcontractor of Laulima Government Solutions, LLC under Contract No. HHSN272201800013C. This work was also supported in part with federal funds from the National Cancer Institute (NCI), National Institutes of Health (NIH), under Contract No. 75N91019D00024, Task Order No. 75N91019F00130 to I.C., who was supported by the Clinical Monitoring Research Program Directorate, Frederick National Lab for Cancer Research. This work was also funded in part by Contract No. HSHQDC-15-C-00064 awarded by DHS S&T for the management and operation of The National Biodefense Analysis and Countermeasures Center, a federally funded research and development center operated by the Battelle National Biodefense Institute (V.W.); and NIH contract HHSN272201000040I/HHSN27200004/D04 and grant R24AI120942 (N.V., R.B.T.). S.S. acknowledges partial support from the Special Research Initiative of Mississippi Agricultural and Forestry Experiment Station (MAFES), Mississippi State University, and the National Institute of Food and Agriculture, US Department of Agriculture, Hatch Project 1021494. Part of this work was supported by the Francis Crick Institute which receives its core funding from Cancer Research UK (FC001030), the UK Medical Research Council (FC001030), and the Wellcome Trust (FC001030).S

Annual (2023) taxonomic update of RNA-directed RNA polymerase-encoding negative-sense RNA viruses (realm Riboviria: kingdom Orthornavirae: phylum Negarnaviricota)

55 Pág.In April 2023, following the annual International Committee on Taxonomy of Viruses (ICTV) ratification vote on newly proposed taxa, the phylum Negarnaviricota was amended and emended. The phylum was expanded by one new family, 14 new genera, and 140 new species. Two genera and 538 species were renamed. One species was moved, and four were abolished. This article presents the updated taxonomy of Negarnaviricota as now accepted by the ICTV.This work was supported in part through the Laulima Government Solutions, LLC, prime contract with the U.S. National Institute of Allergy and Infec tious Diseases (NIAID) under Contract No. HHSN272201800013C. J.H.K. performed this work as an employee of Tunnell Government Services (TGS), a subcontractor of Laulima Government Solutions, LLC, under Contract No. HHSN272201800013C. U.J.B. was supported by the Division of Intramural Resarch, NIAID. This work was also funded in part by Contract No. HSHQDC15-C-00064 awarded by DHS S and T for the management and operation of The National Biodefense Analysis and Countermeasures Centre, a federally funded research and development centre operated by the Battelle National Biodefense Institute (V.W.); and NIH contract HHSN272201000040I/HHSN27200004/D04 and grant R24AI120942 (N.V., R.B.T.). S.S. acknowl edges support from the Mississippi Agricultural and Forestry Experiment Station (MAFES), USDA-ARS project 58-6066-9-033 and the National Institute of Food and Agriculture, U.S. Department of Agriculture, Hatch Project, under Accession Number 1021494. The funders had no role in the design of the study; in the collection, analysis, or interpretation of data; in the writing of the manuscript; or in the decision to publish the results. The views and conclusions contained in this document are those of the authors and should not be interpreted as necessarily representing the official policies, either expressed or implied, of the U.S. Department of the Army, the U.S. Department of Defence, the U.S. Department of Health and Human Services, including the Centres for Disease Control and Prevention, the U.S. Department of Homeland Security (DHS) Science and Technology Directorate (S and T), or of the institutions and companies affiliated with the authors. In no event shall any of these entities have any responsibility or liability for any use, misuse, inability to use, or reliance upon the information contained herein. The U.S. departments do not endorse any products or commercial services mentioned in this publication. The U.S. Government retains and the publisher, by accepting the article for publication, acknowledges that the U.S.Government retains a non-exclusive, paid up, irrevocable, world-wide license to publish or reproduce the published form of this manuscript, or allow others to do so, for U.S. Government purposes.Peer reviewe

2021 Taxonomic update of phylum Negarnaviricota (Riboviria: Orthornavirae), including the large orders Bunyavirales and Mononegavirales.

In March 2021, following the annual International Committee on Taxonomy of Viruses (ICTV) ratification vote on newly proposed taxa, the phylum Negarnaviricota was amended and emended. The phylum was expanded by four families (Aliusviridae, Crepuscuviridae, Myriaviridae, and Natareviridae), three subfamilies (Alpharhabdovirinae, Betarhabdovirinae, and Gammarhabdovirinae), 42 genera, and 200 species. Thirty-nine species were renamed and/or moved and seven species were abolished. This article presents the updated taxonomy of Negarnaviricota as now accepted by the ICTV

Protection périphérique performante appliquée à une diode bipolaire SiC-4H : JTE triple implantée

Texte complet : http://www.jcge2008.ec-lyon.fr/web_JCGE08/papiers/JCGE08_Nicolas_DHEILLY.pdfNational audienceL'objectif de ce papier est d'étudier la protection périphérique de diode bipolaire en SiC avec pour cible une tenue en tension de 7.5 kV. Cette étude pourra être transposée à la protection de tous composants possédant une jonction PiN. L'outil de simulation permet d'optimiser les caractéristiques de la protection. La première idée consiste à utiliser une simple poche latérale, mais dans ce cas, la tenue en tension est très sensible à la dose. C'est la raison pour laquelle, une protection originale a été étudiée avec trois poches consécutives, correspondant à une discrétisation de la poche à dopage variable. Différentes plages de variation du dopage des poches permettent d'atteindre 99% de la tenue en tension maximale. Finalement, pour tenir compte de l'environnement proche du semi-conducteur, des charges fixes positives et négatives à l'interface SC-Oxyde et une couche d'air ont été rajoutées. L'influence de ces charges est montrée sous forme qualitative et quantitative

Design and optimization of light triggered thyristor in silicon carbide for pulse power applications

L'Institut franco-allemand de recherche de Saint-Louis (ISL) développe des alimentations de forte puissance pour des applications d'électronique impulsionnelle. En vue de réduire les pertes, l'encombrement et le poids de ces systèmes, des thyristors en carbure de silicium pourraient à l'avenir remplacer les interrupteurs en silicium actuels. C'est dans le cadre de la collaboration entre le laboratoire Ampère et l'ISL que s'inscrit cette thèse sur ce thème de recherche. Les propriétés physiques du carbure de silicium et les composants réalisés par différents laboratoires universitaires et industriels ont démontré les aptitudes de ce matériau pour les fortes puissances. Le travail réalisé au cours de cette thèse a permis de concevoir de réaliser et de caractériser des thyristors optiques en carbure de silicium. Dans un premier temps, le travail de conception, basé sur des simulations éléments finis, a permis d'optimiser deux protections périphériques, la JTE multiple gravée et la JTE assistée par anneaux gravée, toutes deux robustes vis à vis des incertitudes technologiques sur la gravure, et ayant la particularité de ne pas recourir à l'implantation ionique. Deux séries de thyristors optiques ont ainsi été fabriquées. Le premier lot avait pour but de valider la faisabilité du déclenchement optique de thyristor avec des diodes électroluminescentes UV. Le deuxième lot a permis de mettre en œuvre la JTE assistée par anneaux. Une tenue en tension maximale de 6,3 kV a été mesurée sur ces thyristors. Ces composants sont aussi destinés à évaluer les possibilités en termes d'impulsion de courant des thyristors SiC. A ce titre, deux premières caractérisations ont été effectuées et les dispositifs ont été capables de passer un courant crête de 156 A (soit une densité de courant de 15,6 kA.cm-2) sur une impulsion de 10 μs de large et 40 A (4 kA.cm-2) sur une impulsion de 650 microsecondes de large. Ces résultats montrent une progression significative par rapport aux précédents travaux réalisés sur le thyristor SiC au laboratoire. Ils valident également la bonne stabilité de la technologie de fabrication de l'ISL (gravure, contact ohmique). Cependant, le rendement de fabrication devra être amélioré par le travail mené actuellement par l'ISL, sur la passivation des composants.In order to reduce the losses, the weight and the volume of the power supply of its pulse power systems, the French German research institute of Saint-Louis (ISL) intends to replace the currently used silicon switches by silicon carbide thyristors. This work, in the frame of the collaboration between Ampere laboratory and ISL, deals with the design the fabrication and the characterization of light triggered thyristors in silicon carbide. In the first place, two device terminations, the graded etched JTE and the guard ring assisted etched JTE, have been optimized using finite element simulation. These two structures are tolerant to technological uncertainties and don’t need ion implantation. Two series of light triggered thyristors were also fabricated. Concerning the first run, the light triggering of SiC thyristor with UV light-emitting diodes was demonstrated. The guard ring assisted etched JTE was tested on the second run. The best blocking voltage measured on devices with this termination was 6.3 kV. These devices also aim at assessing the pulse current capabilities of silicon carbide thyristors. To this end, two characterizations were performed and a peak current of 156 A (15.6 kA/cm2) was reached with a pulse width of 10 IJS and 40 A (4 kA/cm2) with a pulse width of 650 IJS. These results show a significant progress compared to previous achievements of the laboratory on silicon carbide thyristor. They also validate the good stability of the fabrication technology of the ISL cleanroom (Etching process, ohm le contact). However, the fabrication yield needs to be improved by the optimization of the device passivation, which is currently under progress at ISL

Conception et optimisation de thyristors optiques en carbure de silicium pour des applications d'électronique impulsionnelle

In order to reduce the losses, the weight and the volume of the power supply of its pulse power systems, the French German research institute of Saint-Louis (ISL) intends to replace the currently used silicon switches by silicon carbide thyristors. This work, in the frame of the collaboration between Ampere laboratory and ISL, deals with the design the fabrication and the characterization of light triggered thyristors in silicon carbide. In the first place, two device terminations, the graded etched JTE and the guard ring assisted etched JTE, have been optimized using finite element simulation. These two structures are tolerant to technological uncertainties and don’t need ion implantation. Two series of light triggered thyristors were also fabricated. Concerning the first run, the light triggering of SiC thyristor with UV light-emitting diodes was demonstrated. The guard ring assisted etched JTE was tested on the second run. The best blocking voltage measured on devices with this termination was 6.3 kV. These devices also aim at assessing the pulse current capabilities of silicon carbide thyristors. To this end, two characterizations were performed and a peak current of 156 A (15.6 kA/cm2) was reached with a pulse width of 10 IJS and 40 A (4 kA/cm2) with a pulse width of 650 IJS. These results show a significant progress compared to previous achievements of the laboratory on silicon carbide thyristor. They also validate the good stability of the fabrication technology of the ISL cleanroom (Etching process, ohm le contact). However, the fabrication yield needs to be improved by the optimization of the device passivation, which is currently under progress at ISL.L'Institut franco-allemand de recherche de Saint-Louis (ISL) développe des alimentations de forte puissance pour des applications d'électronique impulsionnelle. En vue de réduire les pertes, l'encombrement et le poids de ces systèmes, des thyristors en carbure de silicium pourraient à l'avenir remplacer les interrupteurs en silicium actuels. C'est dans le cadre de la collaboration entre le laboratoire Ampère et l'ISL que s'inscrit cette thèse sur ce thème de recherche. Les propriétés physiques du carbure de silicium et les composants réalisés par différents laboratoires universitaires et industriels ont démontré les aptitudes de ce matériau pour les fortes puissances. Le travail réalisé au cours de cette thèse a permis de concevoir de réaliser et de caractériser des thyristors optiques en carbure de silicium. Dans un premier temps, le travail de conception, basé sur des simulations éléments finis, a permis d'optimiser deux protections périphériques, la JTE multiple gravée et la JTE assistée par anneaux gravée, toutes deux robustes vis à vis des incertitudes technologiques sur la gravure, et ayant la particularité de ne pas recourir à l'implantation ionique. Deux séries de thyristors optiques ont ainsi été fabriquées. Le premier lot avait pour but de valider la faisabilité du déclenchement optique de thyristor avec des diodes électroluminescentes UV. Le deuxième lot a permis de mettre en œuvre la JTE assistée par anneaux. Une tenue en tension maximale de 6,3 kV a été mesurée sur ces thyristors. Ces composants sont aussi destinés à évaluer les possibilités en termes d'impulsion de courant des thyristors SiC. A ce titre, deux premières caractérisations ont été effectuées et les dispositifs ont été capables de passer un courant crête de 156 A (soit une densité de courant de 15,6 kA.cm-2) sur une impulsion de 10 μs de large et 40 A (4 kA.cm-2) sur une impulsion de 650 microsecondes de large. Ces résultats montrent une progression significative par rapport aux précédents travaux réalisés sur le thyristor SiC au laboratoire. Ils valident également la bonne stabilité de la technologie de fabrication de l'ISL (gravure, contact ohmique). Cependant, le rendement de fabrication devra être amélioré par le travail mené actuellement par l'ISL, sur la passivation des composants