Modeling, synthesis, and characterization of thin film copper oxide for solar cells

The modeling, growth, and characterization of Copper Oxide thin films for solar cell applications are reported. Cu_2O has several attractive properties which include its direct band gap (Eg=2.17 eV) for use in photoelectrolysis of water and use in tandem multi-junction cells. Detailed balance calculations predict efficiencies on the order of 20% while Cu_2O cells have yet to even pass 2% efficiency. The device physics model reveals that defects, particularly at the heterojunction interface, are the main reason for lowered efficiencies. Epitaxial Cu_2O (100) thin films on MgO are fabricated using RF Oxygen plasma MBE. The films are quite smooth and showed mobilites in the range of 10-100 cm^2/V*sec and carrier concentrations in the range of 10^(14)-10^(17). Finally, the epitaxial growth of Cu_2O on a MgO template is demonstrated

Epitaxial growth of Cu_2O and ZnO/Cu_2O thin films on MgO by plasma-assisted molecular beam epitaxy

We report the epitaxial growth of Cu_2O (0 0 1) and m-plane (1 0 1¯ 0) ZnO/Cu_2O thin films on both bulk MgO (0 0 1) and biaxially textured thin films of MgO (0 0 1) via plasma-assisted molecular beam epitaxy. Cube on cube epitaxial growth of Cu_2O thin films on both bulk MgO (0 0 1) and biaxially textured thin films of MgO (0 0 1) was observed and confirmed via X-ray diffraction and reflection high energy electron diffraction measurements. In addition, epitaxial m-plane ZnO growth via plasma-assisted MBE was conducted on both MgO substrates and Cu_2O/MgO substrates. The ability to grow oriented, high-quality n-ZnO/p-Cu_2O heterostructures enables improved thin film morphology and may have important implications for optoelectronic and photovoltaic devices