Development of an Optoelectronic Sensor for Detecting and Classifying Fruit Fly (Diptera:,Tephritidae) for Use in Real-Time Intelligent Traps.

Fruit flies (Diptera: Tephritidae) cause losses to world fruit growing. For a fast and effective control of the pest, it is necessary to identify the species and their populations. Thus, we developed an infrared optoelectronic sensor using phototransistors to capture the signal of the partial occlusion of the infrared light caused by the beating of the fly wings. Laboratory experiments were conducted using the sensor to capture the wing beat signal of A. fraterculus and C. capitata. The captured signals were used to obtain the characteristics of the flies’ wing beats frequency and for a production of a dataset made available as one of the results of this work. For the passage detection, we developed the algorithm of detection of events of passage (PEDA) that uses the root mean square (RMS) value of a sliding window applied to the signal compared to a threshold value. We developed the algorithm of detection of events of passage (CAEC) that uses the techniques of autocorrelation and Fourier transform for the extraction of the characteristics of the wings’ beat signal. The results demonstrate that it is possible to use the sensor for the development of an intelligent trap with detection and classification in real time for A. fraterculus and C. capitata using the wing beat frequency obtained by the developed sensor

Broadband Dual-Comb Spectroscopy in the Spectral Fingerprint Region

Infrared spectroscopy in the spectral fingerprint region from 6-12 um accesses the largest molecular absorption cross-sections, permitting sensitive, quantitative and species-specific measurements. Here, we show how dual-comb spectroscopy--a form of high-speed Fourier-transform spectroscopy involving no moving parts and capable of very high resolutions--can be extended to the 6-8um wavelength band using femtosecond optical parametric oscillators (OPOs). By acquiring dual-comb interferograms faster than the mutual decoherence time of the OPO combs we implement line-shape-preserving averaging to obtain low-noise, high-fidelity spectra of H2O and CH4 at approximately 0.3 cm-1 resolutions from 1285-1585 cm-1

Power and influence in Africa : Algeria, Egypt, Ethiopia, Nigeria and South Africa

This paper explores the changing power capabilities of Algeria, Egypt, Ethiopia, Nigeria, and South Africa (the ‘Big Five’) over the next 25 years. Of these countries, Ethiopia and Nigeria are forecast to increase their power capabilities, whereas Algeria, Egypt and South Africa are expected to stagnate or decline. Of the Big Five, two currently punch above their weight – one that is rising, Ethiopia, and another whose growth is stagnant, South Africa. If Nigeria were able to take the necessary steps that would see far-reaching changes to the governance issues and social challenges that currently beset the country, it could become Africa’s lone superpower.The Hanns Seidel Foundationhttp://www.issafrica.org/futuresam201

Broadband mid-IR frequency comb with CSP and AGS from a Er,Tm:Ho fiber laser

We report on the generation of a 2500 nm bandwidth frequency comb at 6.5 μm central wavelength based on critically phase-matched parametric down-conversion in the nonlinear crystal CdSiP 2 CdSiP2 (CSP), driven by a compact Er,Tm:Ho fiber laser. The generated ultra-broadband pulses show a transform-limited duration of 2.3 optical cycles and carry up to 150 pJ of energy at a 100 MHz pulse repetition rate. For comparison, the spectrum generated in AgGaS 2 AgGaS2 (AGS) spans from 6.2 to 7.4 μm at full-width at half-maximum (FWHM) with a pulse energy of 3 pJ. A full 3D nonlinear wave propagation code is used for optimization of the noncollinear angle, propagation direction, and crystal thickness.Peer ReviewedPostprint (author's final draft

Terahertz generation by optical rectification in uniaxial birefringent crystals

The angular dependence of terahertz (THz) emission from birefringent crystals can differ significantly from that of cubic crystals. Here we consider optical rectification in uniaxial birefringent materials, such as chalcopyrite crystals. The analysis is verified in (110)-cut ZnGeP_2 and compared to (zincblende) GaP. Although the crystals share the same nonzero second-order tensor elements, the birefringence in chalcopyrite crystals cause the pump pulse polarization to evolve as it propagates through the crystal, resulting in a drastically different angular dependence in chalcopyrite crystals. The analysis is extended to {012}- and {114}-cut chalcopyrite crystals and predicts more efficient conversion for the {114} crystal cut over the {012}- and {110}-cuts.Comment: 6 pages, 3 figure, online journal articl

Broadband Terahertz Pulse Emission from ZnGeP\u3csub\u3e2\u3c/sub\u3e

Optical rectification is demonstrated in (110)-cut ZnGeP2 (ZGP) providing broadband terahertz (THz) generation. The source is compared to both GaP and GaAs over a wavelength range of 1150 nm to 1600 nm and peak intensity range of 0.5 GW/cm2 to 40 GW/cm2. ZGP peak-to-peak field amplitude is larger than in the other materials due to either lower nonlinear absorption or larger second order nonlinearity. This material is well suited for broadband THz generation across a wide range of infrared excitation wavelengths

Intrinsic Point Defects (Vacancies and Antisites) in CdGeP\u3csub\u3e2\u3c/sub\u3e Crystals

Cadmium germanium diphosphide (CdGeP2) crystals, with versatile terahertz-generating properties, belong to the chalcopyrite family of nonlinear optical materials. Other widely investigated members of this family are ZnGeP2 and CdSiP2. The room-temperature absorption edge of CdGeP2 is near 1.72 eV (720 nm). Cadmium vacancies, phosphorous vacancies, and germanium-on-cadmium antisites are present in as-grown CdGeP2 crystals. These unintentional intrinsic point defects are best studied below room temperature with electron paramagnetic resonance (EPR) and optical absorption. Prior to exposure to light, the defects are in charge states that have no unpaired spins. Illuminating a CdGeP2 crystal with 700 or 850 nm light while being held below 120 K produces singly ionized acceptors (VCd−) and singly ionized donors (GeCd+), as electrons move from VCd2− vacancies to GeCd2+ antisites. These defects become thermally unstable and return to their doubly ionized charge states in the 150–190 K range. In contrast, neutral phosphorous vacancies (VP0) are only produced with near-band-edge light when the crystal is held near or below 18 K. The VP0 donors are unstable at these lower temperatures and return to the singly ionized VP+ charge state when the light is removed. Spin-Hamiltonian parameters for the VCd− acceptors and VP0 donors are extracted from the angular dependence of their EPR spectra. Exposure at low-temperature to near-band-edge light also introduces broad optical absorption bands peaking near 756 and 1050 nm. A consistent picture of intrinsic defects in II-IV-P2 chalcopyrites emerges when the present CdGeP2 results are combined with earlier results from ZnGeP2, ZnSiP2, and CdSiP2