Up to fifth-order Raman scattering of InP under nonresonant conditions

We present Raman spectra of InP measured under nonresonant conditions revealing multiphonon processes up to fifth order. Using an incident photon energy in the absorption region of the compound but far from any of its interband transitions, nonresonant multiphonon processes of order higher than two, which have not been reported so far in a zinc-blende-type semiconductor, have been observed in indium phosphide. In this way it has been possible to detect contributions not only from the longitudinal optical phonons but also from the transverse optical phonons in the higher-order peaks. We find a very good agreement between multiples of the TO- and LO-phonon frequencies at the zone center and the higher-order phonons measured in the experiments. The trend of strong intensity reductions observed when passing from first to second as well as from second to third order is not maintained when going from third to fourth, and from fourth to fifth order

Spectrally and spatially resolved cathodoluminescence of undoped/Mg-doped GaN core-shell nanowires: a local probe into activation of Mg acceptors in non-polar and semi-polar crystal faces

Producción CientíficaSpectrally and spatially resolved cathodoluminescence (CL) measurements were carried out at 80 K on undoped/Mg-doped GaN core-shell nanowires grown by selective area growth metalorganic vapor phase epitaxy in order to investigate locally the optical activity of the Mg dopants. A study of the luminescence emission distribution over the different regions of the nanowires is presented. We have investigated the CL fingerprints of the Mg incorporation into the non-polar lateral prismatic facets and the semi-polar facets of the pyramidal tips. The amount of Mg incorporation/activation was varied by using several Mg/Ga flow ratios and post-growth annealing treatments. For lower Mg/Ga flow ratios, the annealed nanowires clearly display a donor-acceptor pair band emission peaking at 3.26-3.27 eV and up to 4 LO phonon replicas, which can be considered as a reliable indicator of effective p-type Mg doping in the nanowire shell. For higher Mg/Ga flow ratios, a substantial enhancement of the yellow luminescence emission as well as several emission subbands are observed, which suggests an increase of disorder and the presence of defects as a consequence of the excess Mg doping,Junta de Castilla y León (programa de apoyo a proyectos de investigación – Ref. VA302U13

Anharmonic phonon decay in cubic GaN

We present a Raman scattering study of optical phonons in zincblende (cubic) GaN for temperatures ranging from 80 to 750 K. The experiments were performed on high quality, cubic GaN films grown by molecular beamepitaxy on GaAs (001) substrates. The observed temperature dependence of the optical phonon frequencies and linewidths is analyzed in the framework of anharmonic decay theory, and possible decay channels are discussed in the light of density-functional theory calculations. The LO mode relaxation is found to occur via asymmetric decay into acoustic phonons, with an appreciable contribution of higher order processes. The TO mode linewidth shows a weak temperature dependence and its frequency downshift is primarily determined by the lattice thermal expansion. The LO phonon lifetime is derived from the observed Raman linewidth and an excellent agreement with previous theoretical predictions is foun

Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors

We have verified the accuracy of free-charge determinations from Raman scattering in doped semiconductors by comparing the results obtained from phonon-plasmon coupled-mode line-shape fits with the charge-density values extracted from the analysis of the Shubnikov-de Haas oscillations. The experiments were carried out on n-InP layers, and conduction band nonparabolicity was included both in the Lindhard-Mermin model used to fit the Raman spectra and in the Shubnikov-de Haas analysis. We find a very good agreement between Raman and magnetotransport results, which confirms the reliability of the charge-density determination from Raman-scattering measurements when the line-shape analysis is carried out using the Lindhard-Mermin model

Derivation of induced pluripotent stem cells (iPSCs) by retroviral transduction of skin fibroblasts from four patients suffering 7q11.23 microduplication syndrome

Skin fibroblasts were obtained from four patients with 7q11.23 microduplication syndrome carrying the reciprocal rearrangement of Williams-Beuren syndrome at the 7q11.23 genomic region. Induced pluripotent stem cells (iPSCs) were generated by retroviral infection of fibroblasts with polycystronic vectors. The generated iPSC clones ESi058B, ESi057B, ESi070A and ESi071A had the 7q11.23 duplication with no additional genomic alterations, a stable karyotype, expressed pluripotency markers and could differentiate towards the three germ layers in vitro via embryoid body formation and in vivo by teratoma formation. Patient's derived iPSCs are a valuable resource for in vitro modeling of 7q11.23 microduplication syndrome

Overtones of interlayer shear modes in the phonon-assisted emission spectrum of hexagonal boron nitride

We address the intrinsic optical properties of hexagonal boron nitride in deep ultraviolet. We show that the fine structure of the phonon replicas arises from overtones involving up to six low-energy interlayer shear modes. These lattice vibrations are specific to layered compounds since they correspond to the shear rigid motion between adjacent layers, with a characteristic energy of about 6-7 meV. We obtain a quantitative interpretation of the multiplet observed in each phonon replica under the assumption of a cumulative Gaussian broadening as a function of the overtone index, and with a phenomenological line broadening taken identical for all phonon types. We show from our quantitative interpretation of the full emission spectrum above 5.7 eV that the energy of the involved phonon mode is 6.8±0.5 meV, in excellent agreement with temperature-dependent Raman measurements of the low-energy interlayer shear mode in hexagonal boron nitride. We highlight the unusual properties of this material where the optical response is tailored by the phonon group velocities in the middle of the Brillouin zone. © 2017 American Physical Society.Peer reviewe

High-pressure lattice dynamics in wurtzite and rocksalt indium nitride investigated by means of Raman spectroscopy

We present an experimental and theoretical lattice-dynamical study of InN at high hydrostatic pressures. We perform Raman scattering measurements on five InN epilayers, with different residual strain and free electron concentrations. The experimental results are analyzed in terms of ab initio lattice-dynamical calculations on both wurtzite InN (w-InN) and rocksalt InN (rs-InN) as a function of pressure. Experimental and theoretical pressure coefficients of the optical modes in w-InN are compared, and the role of residual strain on the measured pressure coefficients is analyzed. In the case of the LO band, we analyze and discuss its pressure behavior considering the double-resonance mechanism responsible for the selective excitation of LO phonons with large wave vectors in w-InN. The pressure behavior of the L− coupled mode observed in a heavily doped n-type sample allows us to estimate the pressure dependence of the electron effective mass in w-InN. The results thus obtained are in good agreement with k⋅p theory. The wurtzite-to-rocksalt phase transition on the upstroke cycle and the rocksalt-to-wurtzite backtransition on the downstroke cycle are investigated, and the Raman spectra of both phases are interpreted in terms of DFT lattice-dynamical calculations. ©2013 American Physical SocietyWork was supported by the Spanish Ministerio de Economia y Competitividad through Projects MAT2010-16116, MAT2010-21270-C04-04 and MALTA Consolider Ingenio 2010 (CSD2007-00045).Ibánez, J.; Oliva, R.; Manjón Herrera, FJ.; Segura, A.; Yamaguchi, T.; Nanishi, Y.; Cuscó, R.... (2013). High-pressure lattice dynamics in wurtzite and rocksalt indium nitride investigated by means of Raman spectroscopy. Physical Review B. 88:115202-1-115202-13. https://doi.org/10.1103/PhysRevB.88.115202S115202-1115202-1388Wu, J. (2009). When group-III nitrides go infrared: New properties and perspectives. Journal of Applied Physics, 106(1), 011101. doi:10.1063/1.3155798Pinquier, C., Demangeot, F., Frandon, J., Pomeroy, J. W., Kuball, M., Hubel, H., … Gil, B. (2004). Raman scattering in hexagonal InN under high pressure. Physical Review B, 70(11). doi:10.1103/physrevb.70.113202Pinquier, C., Demangeot, F., Frandon, J., Chervin, J.-C., Polian, A., Couzinet, B., … Maleyre, B. (2006). Raman scattering study of wurtzite and rocksalt InN under high pressure. Physical Review B, 73(11). doi:10.1103/physrevb.73.115211Yao, L. D., Luo, S. D., Shen, X., You, S. J., Yang, L. X., Zhang, S. J., … Xie, S. S. (2010). Structural stability and Raman scattering of InN nanowires under high pressure. Journal of Materials Research, 25(12), 2330-2335. doi:10.1557/jmr.2010.0290Ibáñez, J., Manjón, F. J., Segura, A., Oliva, R., Cuscó, R., Vilaplana, R., … Artús, L. (2011). High-pressure Raman scattering in wurtzite indium nitride. 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High-pressure behavior of the bond-bending mode of AIN. Journal of Experimental and Theoretical Physics, 98(5), 981-985. doi:10.1134/1.1767565Ibáñez, J., Segura, A., García-Domene, B., Oliva, R., Manjón, F. J., Yamaguchi, T., … Artús, L. (2012). High-pressure optical absorption in InN: Electron density dependence in the wurtzite phase and reevaluation of the indirect band gap of rocksalt InN. Physical Review B, 86(3). doi:10.1103/physrevb.86.035210Serrano, J., Romero, A. H., Manjón, F. J., Lauck, R., Cardona, M., & Rubio, A. (2004). Pressure dependence of the lattice dynamics of ZnO: Anab initioapproach. Physical Review B, 69(9). doi:10.1103/physrevb.69.094306Cuscó, R., Ibáñez, J., Domenech-Amador, N., Artús, L., Zúñiga-Pérez, J., & Muñoz-Sanjosé, V. (2010). Raman scattering of cadmium oxide epilayers grown by metal-organic vapor phase epitaxy. Journal of Applied Physics, 107(6), 063519. doi:10.1063/1.3357377Cuscó, R., Alarcón-Lladó, E., Ibáñez, J., Yamaguchi, T., Nanishi, Y., & Artús, L. (2009). Raman scattering study of background electron density in InN: a hydrodynamical approach to the LO-phonon–plasmon coupled modes. Journal of Physics: Condensed Matter, 21(41), 415801. doi:10.1088/0953-8984/21/41/415801Cuscó, R., Ibáñez, J., Alarcón-Lladó, E., Artús, L., Yamaguchi, T., & Nanishi, Y. (2009). Photoexcited carriers and surface recombination velocity in InN epilayers: A Raman scattering study. Physical Review B, 80(15). doi:10.1103/physrevb.80.155204Wang, X., Che, S.-B., Ishitani, Y., & Yoshikawa, A. (2006). Experimental determination of strain-free Raman frequencies and deformation potentials for the E2 high and A1(LO) modes in hexagonal InN. Applied Physics Letters, 89(17), 171907. doi:10.1063/1.2364884Perlin, P., Jauberthie-Carillon, C., Itie, J. P., San Miguel, A., Grzegory, I., & Polian, A. (1992). 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Lemierre Syndrome associated with dental infections : report of one case and review of the literature

The first publication on Lemierre Syndrome appears in 1936 by Lemierre. It is defined as an ?oropharynx bacterial infection characterized by the thrombophlebitis in the internal jugular vein, derived in a systemic septic embolism?. In 81% of the cases, the Fusobacterium necrophorum is the most frequent etiologic agent. Fever is the most common symptom, but it can depending on the primary infection, tonsillitis, mastoiditis or odontogenic infection. According to the literature the mortality is very low, but with a significant morbidity, that is why the diagnosis and early treatment is very important. The diagnosis it´s clinical, even though the CT scan and other diagnosis methods (echography, MRI) help to determine the extent of the infection. It?s necessary to administrate the antibiotics endovenous at high dose, (keeping in mind that the most frequent micro organism is anaerobic), and vital support measures if neccessary. We present a case report of Lemierre Syndrome associated to an odonthogenic infection caused by the 4.8 molar