87 research outputs found

    Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO2_2 interface

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    SiC based metal-oxide-semiconductor field-effect transistors (MOSFETs) have gained a significant importance in power electronics applications. However, electrically active defects at the SiC/SiO2_2 interface degrade the ideal behavior of the devices. The relevant microscopic defects can be identified by electron paramagnetic resonance (EPR) or electrically detected magnetic resonance (EDMR). This helps to decide which changes to the fabrication process will likely lead to further increases of device performance and reliability. EDMR measurements have shown very similar dominant hyperfine (HF) spectra in differently processed MOSFETs although some discrepancies were observed in the measured gg-factors. Here, the HF spectra measured of different SiC MOSFETs are compared and it is argued that the same dominant defect is present in all devices. A comparison of the data with simulated spectra of the C dangling bond (PbC_\textrm{bC}) center and the silicon vacancy (VSi_\textrm{Si}) demonstrates that the PbC_\textrm{bC} center is a more suitable candidate to explain the observed HF spectra.Comment: Accepted for publication in the Journal of Applied Physic

    Chronic pain through COVID

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    Objectives: To identify good practice in the community management of chronic pain, and to understand the perspective of a group of healthcare service users towards the management of chronic pain using technology during the COVID-19 pandemic. Methods: Forty-five people, recruited via social media and Pain Association Scotland, participated in three focus groups hosted over Zoom. Focus groups were conducted using semi-structured questions to guide the conversation. Data were analysed using Ritchie / Spencer's Framework Analysis. Results: The participants shared observations of their experiences of remotely supported chronic pain services and insights into the potential for future chronic pain care provision. Experiences were in the majority positive with some describing their rapid engagement with technology during the COVID pandemic. Conclusion: Results suggest there is strong potential for telehealth to complement and support existing provision of pain management services

    Microstructure and phase stability of suspension high velocity oxy-fuel sprayed yttria stabilised zirconia coatings from aqueous and ethanol based suspensions

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    Two commercial 7-8 wt.% Yttria Stabilised Zirconia (YSZ) suspensions were sprayed by Suspension High Velocity Oxy Fuel (SHVOF) thermal spraying for advanced high temperature coatings. Heat treatments of the free-standing coatings were conducted at 800 °C and 1000 °C for 72 h. The SHVOF coatings using two liquid carriers: water and ethanol, behaved differently in terms of micro-structure and phase stability. The ethanol coatings retained a fully tetragonal composition after heat treatments; while the aqueous coatings, however, underwent the undesirable tetragonal to monoclinic phase transformation at 1000 °C, which is lower than previously reported temperatures (>1200 °C) in thermal sprayed YSZ coatings. The heat treatments not only resulted in densification of both coatings, but also caused excessive crystallite growth in aqueous coatings promoting the undesirable phase transformation. On the contrary, the ethanol suspension improved the phase stability by favouring the homogenization of yttrium during spraying

    To retain or remove the syndesmotic screw: a review of literature

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    Introduction: Syndesmotic positioning screws are frequently placed in unstable ankle fractures. Many facets of adequate placement techniques have been the subject of various studies. Whether or not the syndesmosis screw should be removed prior to weight-bearing is still debated. In this study, the recent literature is reviewed concerning the need for removal of the syndesmotic screw. Materials and methods: A comprehensive literature search was conducted in the electronic databases of the Cochrane Library, Pubmed Medline and EMbase from January 2000 to October 2010. Results: A total of seven studies were identified in the literature. Most studies found no difference in outcome between retained or removed screws. Patients with screws that were broken, or showed loosening, had similar or improved outcome compared to patients with removed screws. Removal of the syndesmotic screws, when deemed necessary, is usually not performed before 8-12 weeks. Conclusion: There is paucity in randomized controlled trials on the absolute need for removal of the syndesmotic screw. However, current literature suggests that it might be reserved for intact screws that cause hardware irritation or reduced range of motion after 4-6 months

    Welcome and Plenary Session

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    Pudom Lindblad, Tressie McMillan Cottom, and T-Kay Sangwand, with Anastasia Salter as moderator

    Recombination defects at the 4H-SiC/SiO2 interface investigated with electrically detected magnetic resonance and ab initio calculations

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    The selectivity of electrically detected magnetic resonance (EDMR) is utilized to probe the dominant recombination defect at the Si-face 4H-SiC/SiO2interface. The nature of this defect has long been debated with the two main candidates being the Si vacancy (VSi) or the C-dangling bond (PbC). Through comparison between experimental EDMR measurements and ab initio calculations, an important performance limiting recombination defect observed with EDMR in the current generation of nMOSFETs is reasonably explained as a combination of the PbCand the dual-PbCdefects. These defects match the symmetry, hyperfine interaction, and isotopic abundance observed in the experimental EDMR spectrum

    Identifying Performance Limiting Defects in Silicon Carbide pn-Junctions: A Theoretical Study

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    Dopant implantation is a high energy process which causes a significant damage to the crystal lattice and is usually accompanied by a post implantation anneal to repair the structure. Defects created in these processes may also persist in fully processed devices. Previous electron paramagnetic resonance (EPR) and EDMR studies have identified a series of nitrogen related defect complexes in N implanted silicon carbide (SiC) wafers.[1–3] This study examines the formation energy, charge transition levels and barriers to interconversion of two such defects: NCVSi and the NSiVC. The NCVSi center is favoured in a variety of charge states for a wide range of Fermi level positions. We found, however, that for Fermi level positions close to the valence band of 4H-SiC the NCVSi center is a favoured conformation with barriers to rearrangement of +1.2 eV and +3.8 eV in the neutral and +2 charge states, respectively
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