Co-creation impacts on student behavior

[EN] Co-creation is a new trend in business context aimed at fusing all the stakeholders, specially customers in different phase of creation and production of products and services (Ramaswamy & Gouillart, 2010; Bowonder et al.; Muniz & Schau, 2011; Prahalad & Ramaswamy, 2004). Within this paper, the effects of co-creaction approach at the university context are analyzed through a literature review. The objective is to examine the existing relationship among different variables which are present at co-creation process in higher education institutions. The studied variables are communicative participation, co-creation and satisfaction. The results show a positive impact of students' collaborations (as customers) on value co-creation; in addition of a high impact of co-creation on students' satisfaction. Finally, as a future research, it is suggested to carry out, using quantitative techniques, to bolster co-creation implications on scholar behavior.S727722

Low Power Band to Band Tunnel Transistors

As scaling continues, the number of transistors per unit area and power density are both on the rise. A reduction in Vdd is highly desirable to reduce power consumption. For MOSFETs however, this would mean scaling the threshold voltage to maintain performance and thereby enhancing the off current and static power consumption since MOSFETs are limited to a swing of 60mV/decade at best. A low voltage transistor that allows Vdd scaling to 0.5V and below is highly desirable. In this thesis, gate induced band-to-band tunneling transistors are explored as a low voltage alternative because of their potential to achieve lower than 60mV/decade turn-off. Since BTBT is strongly dependant on the band gap of the semiconductor, moving from Silicon to Germanium to lower band gap materials can help scale ,Vdd. Biaxially strained Si1-xGex based heterostructures can provide ultra low effective band gaps. Strain is used to engineer complimentary Si1-xGex heterostructures with low effective band gap for both N and P type transistors. The design and fabrication of heterostructure based tunnel transistors is explored to help scale Vdd to 0.5V and below. Dopant engineering techniques to enhance the electric field are also explored both with simulations and experiments