Investigation of deep level defects in advanced semiconductor materials and devices

This thesis reports an investigation of deep level defects in narrow bandgap semiconductors, namely GaAs and GaAsN, and wide-gap GaN materials and devices that have potential applications in photovoltaics and betavoltaic microbatteries. Indeed, for such applications it is of paramount importance to determine the characteristics of the defects present in the materials, which will help understand their effects on the quality of the materials and the performance of devices. In particular, the investigation is done on: (i) a set of GaAs (311)A solar cell structures gown by molecular beam epitaxy (MBE); (ii) dilute GaAsN epitaxial layers containing different nitrogen concentrations grown by MBE; and (iii) betavoltaic microbattery based on a GaN p–i–n homojunction structures grown by metal-organic vapour phase epitaxy (MOVPE) technique using current-voltage (I-V), capacitance-voltage (C-V), deep level transient spectroscopy (DLTS), and Laplace DLTS measurements. The results of this study show that the defects affected significantly the electrical properties of different advanced semiconductor structures and devices. In particular, InGaAs Quantum Wires (QWr) Intermediate Band Solar Cells based nanostructures grown by MBE were studied. The DLTS and Laplace DLTS results showed that the efficiency measurements and external quantum efficiency (EQE) at different temperatures correlated with the appearance of defect peaks in QWr devices in the same temperature ranges. Additionally, this thesis reports the effect of a high dose of gamma (γ-) irradiation on MBE grown dilute GaAsN epilayers with nitrogen concentrations ranging from 0.2 to 1.2% with post-irradiation stability. The DLTS measurements revealed that after irradiation the number of traps either decreased, remained constant, or new traps are created depending on the concentration of nitrogen. Moreover, this thesis reports the effect of beta particle irradiation on the electrical properties of a betavoltaic microbattery based on a GaN p–i–n homojunction with 200 nm and 600 nm thicknesses of undoped layer (i-GaN). The experimental studies demonstrate that, only the sample with thinner i-GaN layer shows the creation of new shallow donor traps upon irradiation on the p-side of the p-i-n junction. While the sample with thicker i-GaN is more resistant to irradiation

Investigation of deep level defects in advanced semiconductor materials and devices

This thesis reports an investigation of deep level defects in narrow bandgap semiconductors, namely GaAs and GaAsN, and wide-gap GaN materials and devices that have potential applications in photovoltaics and betavoltaic microbatteries. Indeed, for such applications it is of paramount importance to determine the characteristics of the defects present in the materials, which will help understand their effects on the quality of the materials and the performance of devices. In particular, the investigation is done on: (i) a set of GaAs (311)A solar cell structures gown by molecular beam epitaxy (MBE); (ii) dilute GaAsN epitaxial layers containing different nitrogen concentrations grown by MBE; and (iii) betavoltaic microbattery based on a GaN p–i–n homojunction structures grown by metal-organic vapour phase epitaxy (MOVPE) technique using current-voltage (I-V), capacitance-voltage (C-V), deep level transient spectroscopy (DLTS), and Laplace DLTS measurements. The results of this study show that the defects affected significantly the electrical properties of different advanced semiconductor structures and devices. In particular, InGaAs Quantum Wires (QWr) Intermediate Band Solar Cells based nanostructures grown by MBE were studied. The DLTS and Laplace DLTS results showed that the efficiency measurements and external quantum efficiency (EQE) at different temperatures correlated with the appearance of defect peaks in QWr devices in the same temperature ranges. Additionally, this thesis reports the effect of a high dose of gamma (γ-) irradiation on MBE grown dilute GaAsN epilayers with nitrogen concentrations ranging from 0.2 to 1.2% with post-irradiation stability. The DLTS measurements revealed that after irradiation the number of traps either decreased, remained constant, or new traps are created depending on the concentration of nitrogen. Moreover, this thesis reports the effect of beta particle irradiation on the electrical properties of a betavoltaic microbattery based on a GaN p–i–n homojunction with 200 nm and 600 nm thicknesses of undoped layer (i-GaN). The experimental studies demonstrate that, only the sample with thinner i-GaN layer shows the creation of new shallow donor traps upon irradiation on the p-side of the p-i-n junction. While the sample with thicker i-GaN is more resistant to irradiation

Rapid thermal annealing: An efficient method to improve the electrical properties of tellurium compensated Interfacial Misfit GaSb/GaAs heterostructures

The effect of thermal annealing on Te compensated Interfacial Misfit GaSb/GaAs heterostructures is investigated by using two different thermal annealing procedures, namely rapid thermal annealing and furnace annealing. The electrical properties of the devices are studied by using Current–Voltage, Capacitance–Voltage and Deep Level Transient Spectroscopy techniques. It is observed that rapid thermal annealing treatment is superior in terms of improvement of the electrical characteristics compared to furnace annealing treatment. The lowest leakage current and defect concentration are obtained when rapid thermal annealing is employed

Investigation of the effects of GaAs substrate orientations on the electrical properties of sulfonated polyaniline based heterostructures

In this work we present a detailed study of the influence of the GaAs substrate orientation on the electrical properties of heterojunctions based on GaAs and sulfonated polyaniline (SPAN) using Current-Voltage (I-V), Capacitance-Voltage (C-V), Deep-Level Transient Spectroscopy (DLTS) and Laplace DLTS techniques. Three different GaAs substrate orientations have been investigated, namely (1 0 0), (3 1 1)A and (3 1 1)B. The I-V results revealed that the turn-on voltage (Von) of SPAN/(3 1 1)B GaAs heterojunction is higher than that for SPAN/(1 0 0) GaAs and SPAN/(3 1 1)A GaAs heterojunctions. The DLTS results showed that the number of electrically active defects present in devices based on the lower index (1 0 0) plane of GaAs substrate is higher than those of higher index (3 1 1)A and (3 1 1)B GaAs substrates, corroborating with I-V results. In order to investigate the role of interface states, capacitance-frequency measurements were performed in forward bias on all three devices

Characterisation of temperature dependent parameters of multi-quantum well (MQW) Ti/Au/n-AlGaAs/n-GaAs/n-AlGaAs Schottky diodes

Forward and reverse current-voltage (IV) of Ti/Au/n-Al0.33Ga0.67As/n-GaAs/n-Al0.33Ga0.67As multi-quantum well (MQW) Schottky diodes were measured over a range of temperatures from 20 to 400 K by a step of 20 K. The Schottky diodes parameters were then extracted from these characteristics. The Cheung method is used for this purpose, assuming a thermionic conduction mechanism. The extracted ideality factor decrease with increasing temperatures. But their values at low temperatures were found to be unrealistic. In order to explain this uncertainty, three assumptions were explored. Firstly an assumed inhomogeneous barrier height gave better parameters especially the Richardson constant but the ideality factor is still unrealistic at low temperatures. Secondly, by using numerical simulation, it was demonstrated that defects including interface states are not responsible for the apparent unrealistic Schottky diode parameters. The third assumption is the tunnelling mechanism through the barrier in the low temperature range. At these lower temperatures, the tunnelling mechanism was more suitable to explain the extracted parameters values

Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy (DLTS) technique

InGaAs quantum wire (QWr) intermediate-band solar cell based nanostructures grown by molecular beam epitaxy are studied. The electrical and interface properties of these solar cell devices, as determined by current–voltage (I–V) and capacitance–voltage (C-V) techniques, were found to change with temperature over a wide range of 20–340 K. The electron and hole traps present in these devices have been investigated using deep-level transient spectroscopy (DLTS). The DLTS results showed that the traps detected in the QWr-doped devices are directly or indirectly related to the insertion of the Si δ-layer used to dope the wires. In addition, in the QWr-doped devices, the decrease of the solar conversion efficiencies at low temperatures and the associated decrease of the integrated external quantum efficiency through InGaAs could be attributed to detected traps E1QWR_D, E2QWR_D, and E3QWR_D with activation energies of 0.0037, 0.0053, and 0.041 eV, respectively

Effect of growth techniques on the structural, optical and electrical properties of indium doped TiO2thin films

We have investigated the effect of the growth techniques on the structural, the electrically and optically active defects in Indium doped TiO2 thin films grown by pulsed laser deposition (PLD) and sputtering techniques. X-ray diffraction (XRD) and Raman spectroscopy patterns revealed both rutile and anatase phases for the sputtering samples. On the other hand, only the anatase phase was observed for the PLD samples. The photoluminescence (PL) spectra have unveiled several peaks which were explained by defect related optical transitions. Particularly, the PL bands are fully consistent with anatase/rutile TiO2 phases and the formation of In2O3 during the preparation of our samples. It was also observed that at −4 V reverse bias, the PLD samples have lower leakage currents (∼1.4 × 10−7 A) as compared to the sputtering samples (∼5.9 × 10−7 A). In addition, the PLD samples exhibited lower ideality factors and higher barrier heights as compared to those grown by sputtering. Finally, the Deep Level Transient Spectroscopy (DLTS) measurements have shown only one defect in the PLD samples whereas five defects have been detected in the sputtering samples. Therefore, our results provide strong evidence that the PLD technique is better suited for the growth of In-doped TiO2 thin films

Effects of Gamma Radiation on the Electrical Properties of InAs/InGaAs Quantum Dots Based Laser Structures Grown on GaAs and Si Substrates by Molecular Beam Epitaxy

This study investigates the impact of gamma radiation on the electrical properties of InAs/InGaAs quantum dots based laser structures grown on both GaAs (Sample A) and Si (Sample B) substrates using molecular beam epitaxy. The research explores the electrical characteristics of the lasers before and after being exposed to gamma radiation employing Current - Voltage (I-V), Capacitance - Voltage (C-V), Deep Level Transient Spectroscopy (DLTS) and Laplace DLTS techniques. The results show that the electrical properties of the lasers change due to gamma radiation exposure, and the extent of the change depends on the substrate used for growth. The I–V results revealed that the ideality factor (n) and built-in voltage were increased in Sample A and Sample B after radiation. Nonetheless, the series resistance (Rs) at room temperature decreased in both samples after radiation. Overall, this study provides valuable insights into the effects of gamma radiation on the electrical properties of InAs/InGaAs quantum dots lasers and highlights the importance of considering substrate materials in the design of radiation-hardened electronic devices

KSB. Geschaeftsbericht 2002

Available from TIB Hannover / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEDEGerman

Deep-level transient spectroscopy of interfacial states in “buffer-free” p-i-n GaSb/GaAs devices

International audienceA systematic study was carried out on defect states in Interfacial Misfit (IMF) unpassivated and Te-passivated IMF in p-i-n GaSb/GaAs devices using Deep Level Transient Spectroscopy (DLTS) and Laplace DLTS. Additionally, Current-Voltage (I–V) measurements were performed, which showed that the turn-on voltage (Von) of passivated samples is lower than that for unpassivated samples; an effect which can be explained by the introduction of new defects states near to the interface of GaSb/GaAs, where Te was incorporated to passivate the IMF. The Capacitance-Voltage (C-V) analysis demonstrates that these new states are the consequence of adding Te at the misfit of GaSb/GaAs. Furthermore, DLTS measurements reveal a distribution of states including a main midgap energy level, namely the well documented EL2 trap, with some peculiar behaviour. Most of these levels are related to interface states that are generated by the mismatch between GaAs and GaSb. Originally, the addition of Te atoms was thought to passivate these interface states. On the contrary, this paper, which attempts at correlating the current-voltage and capacitance-voltage characteristics to the DLTS results, shows clearly that Te atoms increase the density of interface states