The effect of low-level laser irradiation (In-Ga-Al-AsP - 660 nm) on melanoma in vitro and in vivo

<p>Abstract</p> <p>Background</p> <p>It has been speculated that the biostimulatory effect of Low Level Laser Therapy could cause undesirable enhancement of tumor growth in neoplastic diseases. The aim of the present study is to analyze the behavior of melanoma cells (B16F10) <it>in vitro </it>and the <it>in vivo </it>development of melanoma in mice after laser irradiation.</p> <p>Methods</p> <p>We performed a controlled <it>in vitro </it>study on B16F10 melanoma cells to investigate cell viability and cell cycle changes by the Tripan Blue, MTT and cell quest histogram tests at 24, 48 and 72 h post irradiation. The <it>in vivo </it>mouse model (male Balb C, n = 21) of melanoma was used to analyze tumor volume and histological characteristics. Laser irradiation was performed three times (once a day for three consecutive days) with a 660 nm 50 mW CW laser, beam spot size 2 mm², irradiance 2.5 W/cm²and irradiation times of 60s (dose 150 J/cm²) and 420s (dose 1050 J/cm²) respectively.</p> <p>Results</p> <p>There were no statistically significant differences between the <it>in vitro </it>groups, except for an increase in the hypodiploid melanoma cells (8.48 ± 1.40% and 4.26 ± 0.60%) at 72 h post-irradiation. This cancer-protective effect was not reproduced in the <it>in vivo </it>experiment where outcome measures for the 150 J/cm²dose group were not significantly different from controls. For the 1050 J/cm²dose group, there were significant increases in tumor volume, blood vessels and cell abnormalities compared to the other groups.</p> <p>Conclusion</p> <p>LLLT Irradiation should be avoided over melanomas as the combination of high irradiance (2.5 W/cm²) and high dose (1050 J/cm²) significantly increases melanoma tumor growth <it>in vivo</it>.</p

Effects of Hydrogen Peroxide on Wound Healing in Mice in Relation to Oxidative Damage

10.1371/journal.pone.0049215PLoS ONE711

Blood pressure-lowering effects of nifedipine/candesartan combinations in high-risk individuals: Subgroup analysis of the DISTINCT randomised trial

The DISTINCT study (reDefining Intervention with Studies Testing Innovative Nifedipine GITS - Candesartan Therapy) investigated the efficacy and safety of nifedipine GITS/candesartan cilexetil combinations vs respective monotherapies and placebo in patients with hypertension. This descriptive sub-analysis examined blood pressure (BP)-lowering effects in high-risk participants, including those with renal impairment (estimated glomerular filtration rate<90 ml min-1, n=422), type 2 diabetes mellitus (n=202), hypercholesterolaemia (n=206) and cardiovascular (CV) risk factors (n=971), as well as the impact of gender, age and body mass index (BMI). Participants with grade I/II hypertension were randomised to treatment with nifedipine GITS (N) 20, 30, 60 mg and/or candesartan cilexetil (C) 4, 8, 16, 32 mg or placebo for 8 weeks. Mean systolic BP and diastolic BP reductions after treatment in high-risk participants were greater, overall, with N/C combinations vs respective monotherapies or placebo, with indicators of a dose-response effect. Highest rates of BP control (ESH/ESC 2013 guideline criteria) were also achieved with highest doses of N/C combinations in each high-risk subgroup. The benefits of combination therapy vs monotherapy were additionally observed in patient subgroups categorised by gender, age or BMI. All high-risk participants reported fewer vasodilatory adverse events in the pooled N/C combination therapy than the N monotherapy group. In conclusion, consistent with the DISTINCT main study outcomes, high-risk participants showed greater reductions in BP and higher control rates with N/C combinations compared with respective monotherapies and lesser vasodilatory side-effects compared with N monotherapy

Nanoscale strain characterisation for ultimate CMOS and beyond

Strain engineering is used to maintain Moore's Law in scaled CMOS devices and as a technology booster for More-than-Moore devices in the nanoelectronics era. Strain is crucial because of its ability to increase electron and hole mobilities in Si. However, accurate correlations between electrical performance and strain measurements are needed to enable the necessary feedback between materials, processing and devices to achieve best possible solutions. In this work, we outline new methods for sensitive 3D profiling of strain on a nanoscale. High-resolution vertical and lateral strain profiles applicable to both global (biaxial) and process-induced (uniaxial) strained Si devices are demonstrated. Raman spectroscopy is pushed to its present limit for precise analysis of strain in small geometry devices, including the use of tip-enhanced Raman spectroscopy (TERS) to improve the spatial resolution further. TERS maps are compared with atomic force microscopy data collected simultaneously and show that variations in surface morphology correlate directly with strain in the epitaxial layers. Sub-nm strain profiling is applied to strained Si and SiGe MOSFET channels. Strain is profiled across patterned uniaxial strained-Si-on-insulator structures and analysed in bended nanowire transistors. Finally strain is investigated across the channel regions of electrically measured SiGe p-MOSFETs. Good agreement between nanoscale strain measurements and finite element modelling is demonstrated. Sample preparation is included in the analysis and genuine effects of processing are investigated