Static Dielectric Constant of β-Ga2O3 Perpendicular to the Principal Planes (100), (010), and (001)

The relative static dielectric constant ℇr of β-Ga2O3 perpendicular to the planes (100), (010), and (001) is determined in the temperature range from 25 K to 500 K by measuring the AC capacitance of correspondingly oriented plate capacitor structures using test frequencies of up to 1 MHz. This allows a direct quantification of the static dielectric constant and a unique direction assignment of the obtained values. At room temperature, ℇr perpendicular to the planes (100), (010), and (001) amounts to 10.2 ± 0.2, 10.87 ± 0.08, and 12.4 ± 0.4, respectively, which clearly evidence the anisotropy expected for β-Ga2O3 due to its monoclinic crystal structure. An increase of ℇr by about 0.5 with increasing temperature from 25 K to 450 K was found for all orientations. Our ℇr data resolve the inconsistencies in the previously available literature data with regard to absolute values and their directional assignment and therefore provide a reliable basis for the simulation and design of devices. © The Author(s) 2019

Data Mining Techniques to Study Therapy Success with Autistic Children

Autism spectrum disorder has become one of the most prevalent developmental disorders, characterized by a wide variety of symptoms. Many children need extensive therapy for years to improve their behavior and facilitate integration in society. However, few systematic evaluations are done on a large scale that can provide insights into how, where, and how therapy has an impact. We describe how data mining techniques can be used to provide insights into behavioral therapy as well as its effect on participants. To this end, we are developing a digital library of coded video segments that contains data on appropriate and inappropriate behavior of autistic children in different social settings during different stages of therapy and. In general, we found that therapy increased appropriate behavior and decreased inappropriate behavior. Decision trees and association rules provided more detailed insights for high and low levels of appropriate and inappropriate behavior. We found that a child\u27s interaction with a parent or therapist led to especially high levels of appropriate behavior and behavior is most predictable while therapy is in progress

Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model

We study the homoepitaxial growth of β-Ga2O3 (100) grown by metal-organic vapour phase as dependent on miscut-angle vs. the c direction. Atomic force microscopy of layers grown on substrates with miscut-angles smaller than 2° reveals the growth proceeding through nucleation and growth of two-dimensional islands. With increasing miscut-angle, step meandering and finally step flow growth take place. While step-flow growth results in layers with high crystalline perfection, independent nucleation of two-dimensional islands causes double positioning on the (100) plane, resulting in twin lamellae and stacking mismatch boundaries. Applying nucleation theory in the mean field approach for vicinal surfaces, we can fit experimentally found values for the density of twin lamellae in epitaxial layers as dependent on the miscut-angle. The model yields a diffusion coefficient for Ga adatoms of D = 7 × 10−9 cm2 s−1 at a growth temperature of 850 °C, two orders of magnitude lower than the values published for GaAs

Distinction between the Poole-Frenkel and tunneling models of electric field-stimulated carrier emission from deep levels in semiconductors

The enhancement of the emission rate of charge carriers from deep-level defects in electric field is routinely used to determine the charge state of the defects. However, only a limited number of defects can be satisfactorily described by the Poole-Frenkel theory. An electric field dependence different from that expected from the Poole-Frenkel theory has been repeatedly reported in the literature, and no unambiguous identification of the charge state of the defect could be made. In this article, the electric field dependencies of emission of carriers from DX centers in AlxGa1-xAs:Te, Cu pairs in silicon, and Ge:Hg have been studied applying static and terahertz electric fields, and analyzed by using the models of Poole-Frenkel and phonon assisted tunneling. It is shown that phonon assisted tunneling and Poole-Frenkel emission are two competitive mechanisms of enhancement of emission of carriers, and their relative contribution is determined by the charge state of the defect and by the electric-field strength. At high-electric field strengths carrier emission is dominated by tunneling independently of the charge state of the impurity. For neutral impurities, where Poole-Frenkel lowering of the emission barrier does not occur, the phonon assisted tunneling model describes well the experimental data also in the low-field region. For charged impurities the transition from phonon assisted tunneling at high fields to Poole-Frenkel effect at low fields can be traced back. It is suggested that the Poole-Frenkel and tunneling models can be distinguished by plotting logarithm of the emission rate against the square root or against the square of the electric field, respectively. This analysis enables one to unambiguously determine the charge state of a deep-level defect

The anisotropic quasi-static permittivity of single-crystal β-Ga\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e measured by terahertz spectroscopy

The quasi-static anisotropic permittivity parameters of electrically insulating beta gallium oxide (β-Ga2O3) were determined by terahertz spectroscopy. Polarization-resolved frequency domain spectroscopy in the spectral range from 200 GHz to 1 THz was carried out on bulk crystals along different orientations. Principal directions for permittivity were determined along crystallographic axes c and b and reciprocal lattice direction a*. No significant frequency dispersion in the real part of dielectric permittivity was observed in the measured spectral range. Our results are in excellent agreement with recent radio frequency capacitance measurements as well as with extrapolations from recent infrared measurements of phonon mode and high-frequency contributions and close the knowledge gap for these parameters in the terahertz spectral range. Our results are important for applications of β-Ga2O3 in high-frequency electronic devices

Microstructural design for mechanical and electrical properties of Spark Plasma Sintered Al2O3-SiC nanocomposites

[EN] Al2O3-17 vol.% SiC nanocomposites were prepared by powder mixture of submicrosized alpha-Al2O3, nanosized gamma-Al2O3 and different nanosized beta-SiC. Materials were sintered by spark plasma sintering (SPS) technique at two temperatures (1400-1550 degrees C) and their electrical conductivity and mechanical properties were investigated. High-density composites have been achieved even at the lowest sintering temperatures and the microstructure characterization shows SiC particles located both within the Al2O3 matrix grains and/or at the Al2O3 grain boundaries. It has been demonstrated that microstructure tailoring is possible by suitable selection of starting materials and fast sintering by SPS. Accurate design of nanocomposites microstructures allows obtaining moderately conductive (<100 Omega cm) or insulating (10(8) Omega cm) materials while the chemical composition is similar. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.Financial support of this work by the European Commission is gratefully acknowledged (IP Nanoker P3-CT-2005-515784). A. Borrell acknowledges the Spanish Ministry of Science and Innovation for Ph.D. grant (MAT2006-01783).Borrell Tomás, MA.; Alvarez, I.; Torrecillas, R.; Rocha, VG.; Fernandez, A. (2012). Microstructural design for mechanical and electrical properties of Spark Plasma Sintered Al2O3-SiC nanocomposites. Materials Science and Engineering: A. 534:693-698. https://doi.org/10.1016/j.msea.2011.12.032S69369853

Human Lin28 forms a high-affinity 1:1 complex with the 106~363 cluster miRNA miR-363

Lin28A is a post-transcriptional regulator of gene expression that interacts with and negatively regulates the biogenesis of let-7 family miRNAs. Recent data suggested that Lin28A also binds the putative tumour suppressor miR-363, a member of the 106~363 cluster of miRNAs. Affinity toward this miRNA and the stoichiometry of the protein-RNA complex are unknown. Characterisation of human Lin28's interaction with RNA has been complicated by difficulties in producing stable RNA-free protein. We have engineered a maltose binding protein fusion with Lin28, which binds let-7 miRNA with a Kd of 54.1 ± 4.2 nM, in agreement with previous data on a murine homologue. We show that human Lin28A binds miR-363 with 1:1 stoichiometry and with similar, if not higher, affinity (Kd = 16.6 ± 1.9 nM). Further analysis suggests that the interaction of the N-terminal cold shock domain of Lin28A with RNA is salt-dependent, supporting a model where the cold shock domain allows the protein to sample RNA substrates through transient electrostatic interactions

Baryon Stopping and Charged Particle Distributions in Central Pb+Pb Collisions at 158 GeV per Nucleon

Net proton and negative hadron spectra for central \PbPb collisions at 158 GeV per nucleon at the CERN SPS were measured and compared to spectra from lighter systems. Net baryon distributions were derived from those of net protons, utilizing model calculations of isospin contributions as well as data and model calculations of strange baryon distributions. Stopping (rapidity shift with respect to the beam) and mean transverse momentum \meanpt of net baryons increase with system size. The rapidity density of negative hadrons scales with the number of participant nucleons for nuclear collisions, whereas their \meanpt is independent of system size. The \meanpt dependence upon particle mass and system size is consistent with larger transverse flow velocity at midrapidity for \PbPb compared to \SS central collisions.Comment: This version accepted for publication in PRL. 4 pages, 3 figures. Typos corrected, some paragraphs expanded in response to referee comments, to better explain details of analysi

Experimental Study of the Shortest Reset Word of Random Automata

In this paper we describe an approach to finding the shortest reset word of a finite synchronizing automaton by using a SAT solver. We use this approach to perform an experimental study of the length of the shortest reset word of a finite synchronizing automaton. The largest automata we considered had 100 states. The results of the experiments allow us to formulate a hypothesis that the length of the shortest reset word of a random finite automaton with $n$ states and 2 input letters with high probability is sublinear with respect to $n$ and can be estimated as $1.95 n^{0.55}.