Circuit Modules for CMOS High-Power Short Pulse Generators

High-power short electrical pulses are important for high-performance functionality integration, such as the development of microelectromechanical/nanoelectromechanical systems (MEMS/NEMS), system on chip (SoC) and lab on chip (LoC). Many of these applications need high-power (low impedance load) short electrical pulses, in addition to CMOS digital intelligence. Therefore, it is of great interest to develop new circuit techniques to generate high-power high-voltage short electrical pulses on-chip. Results on pulse forming line (PFL) based CMOS pulse generator studies are reported. Through simulations, the effects of PFL length, switch speed and switch resistance on the output pulses are clarified. CMOS pulse generators are modeled and analyzed with on-chip transmission lines (TLs) as PFLs and CMOS transistors as switches. In the 0.13 um CMOS process with a 500 um long PFL, post layout simulations show that pulses of 10.4 ps width can be obtained. High-voltage and high-power outputs can be generated with other pulsed power circuits, such as Blumlein PFLs with stacked MOSFET switches. Thus, the PFL circuit significantly extends short and high-power pulse generation capabilities of CMOS technologies. A CMOS circuit with a 4 mm long PFL is implemented in the commercial 0.13 um technology. Pulses of ~ 160 ps duration and 110-200 mV amplitude on a 50 Ohms load are obtained when the power supply is tuned from 1.2 V to 2.0 V. Measurement Instruments limitations are probably the main reasons for the discrepancies among measurement and simulation results. A four-stage charge pump is presented as high voltage bias of the Blumlein PFLs pulse generator. Since Schottky diode has low forward drop voltage (~ 0.3V), using it as charge transfer cell can have high charge pumping gain and avoid additional control circuit for switch. A four-stage charge pump with Schottky diode as charge transfer cell is implemented in a commercial 0.13 um technology. Charge pump output and efficiency under different power supply voltages, load currents and clock frequencies are measured and presented. The maximum output voltage is ~ 6 V and the maximum efficiency is ~ 50%

Towards On-Chip Self-Referenced Frequency-Comb Sources Based on Semiconductor Mode-Locked Lasers.

Miniaturization of frequency-comb sources could open a host of potential applications in spectroscopy, biomedical monitoring, astronomy, microwave signal generation, and distribution of precise time or frequency across networks. This review article places emphasis on an architecture with a semiconductor mode-locked laser at the heart of the system and subsequent supercontinuum generation and carrier-envelope offset detection and stabilization in nonlinear integrated optics

A Fully Differential Digital CMOS Pulse UWB Generator

A new fully-digital CMOS pulse generator for impulse-radio Ultra-Wide-Band (UWB) systems is presented. First, the shape of the pulse which best fits the FCC regulation in the 3.1-5 GHz sub-band of the entire 3.1-10.6 GHz UWB bandwidth is derived and approximated using rectangular digital pulses. In particular, the number and width of pulses that approximate an ideal template is found through an ad-hoc optimization methodology. Then a fully differential digital CMOS circuit that synthesizes the pulse sequence is conceived and its functionality demonstrated through post-layout simulations. The results show a very good agreement with the FCC requirements and a low power consumptio

A review of advances in pixel detectors for experiments with high rate and radiation

The Large Hadron Collider (LHC) experiments ATLAS and CMS have established hybrid pixel detectors as the instrument of choice for particle tracking and vertexing in high rate and radiation environments, as they operate close to the LHC interaction points. With the High Luminosity-LHC upgrade now in sight, for which the tracking detectors will be completely replaced, new generations of pixel detectors are being devised. They have to address enormous challenges in terms of data throughput and radiation levels, ionizing and non-ionizing, that harm the sensing and readout parts of pixel detectors alike. Advances in microelectronics and microprocessing technologies now enable large scale detector designs with unprecedented performance in measurement precision (space and time), radiation hard sensors and readout chips, hybridization techniques, lightweight supports, and fully monolithic approaches to meet these challenges. This paper reviews the world-wide effort on these developments.Comment: 84 pages with 46 figures. Review article.For submission to Rep. Prog. Phy

Phase-locking in Multi-Frequency Brillouin Oscillator via Four Wave Mixing

Stimulated Brillouin scattering (SBS) and Kerr-nonlinear four wave-mixing (FWM) are among the most important and widely studied nonlinear effects in optical fibres. At high powers SBS can be cascaded producing multiple Stokes waves spaced by the Brillouin frequency shift. Here, we investigate the complex nonlinear interaction of the cascade of Stokes waves, generated in a Fabry-Perot chalcogenide fibre resonator through the combined action of SBS and FWM. We demonstrate the existence of parameter regimes, in which pump and Stokes waves attain a phase-locked steady state. Real-time measurements of 40ps pulses with 8GHz repetition rate are presented, confirming short-and long-term stability. Numerical simulations qualitatively agree with experiments and show the significance of FWM in phase-locking of pump and Stokes waves. Our findings can be applied for the design of novel picosecond pulse sources with GHz repetition rate for optical communication systems

Design and validation of a platform for electromagnetic fault injection

Security is acknowledged as one of the main challenges in the design and deployment of embedded circuits. Devices need to operate on-the-field safely and correctly, even when at physical reach of potential adversaries. One of the most powerful techniques to compromise the correct functioning of a device are fault injection attacks. They enable an active adversary to trigger errors on a circuit in order to bypass security features or to gain knowledge of security-sensitive information. There are several methods to induce such errors. In this work we focus on the injection of faults through the electromagnetic (EM) channel. In particular, we document our efforts towards building a suitable platform for EM pulse injection. We design a pulse injection circuit that can provide currents over 20 A to an EM injector in order to generate abrupt variations of the EM field on the vicinity of a circuit. We validate the suitability of our platform by applying a well-know attack on an embedded 8-bit microcontroller implementing the AES block cipher. In particular, we show how to extract the AES secret cryptographic keys stored in the device by careful injection of faults during the encryption operations and simple analysis of the erroneous outputs.Peer ReviewedPostprint (published version

Dissipative Kerr solitons in optical microresonators

This chapter describes the discovery and stable generation of temporal dissipative Kerr solitons in continuous-wave (CW) laser driven optical microresonators. The experimental signatures as well as the temporal and spectral characteristics of this class of bright solitons are discussed. Moreover, analytical and numerical descriptions are presented that do not only reproduce qualitative features but can also be used to accurately model and predict the characteristics of experimental systems. Particular emphasis lies on temporal dissipative Kerr solitons with regard to optical frequency comb generation where they are of particular importance. Here, one example is spectral broadening and self-referencing enabled by the ultra-short pulsed nature of the solitons. Another example is dissipative Kerr soliton formation in integrated on-chip microresonators where the emission of a dispersive wave allows for the direct generation of unprecedentedly broadband and coherent soliton spectra with smooth spectral envelope.Comment: To appear in "Nonlinear optical cavity dynamics", ed. Ph. Grel