215 research outputs found

    Yield-driven power-delay-optimal CMOS full-adder design complying with automotive product specifications of PVT variations and NBTI degradations

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    We present the detailed results of the application of mathematical optimization algorithms to transistor sizing in a full-adder cell design, to obtain the maximum expected fabrication yield. The approach takes into account all the fabrication process parameter variations specified in an industrial PDK, in addition to operating condition range and NBTI aging. The final design solutions present transistor sizing, which depart from intuitive transistor sizing criteria and show dramatic yield improvements, which have been verified by Monte Carlo SPICE analysis

    Dynamic Lifetime Reliability and Energy Management for Network-on-Chip based Chip Multiprocessors

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    In this dissertation, we study dynamic reliability management (DRM) and dynamic energy management (DEM) techniques for network-on-chip (NoC) based chip multiprocessors (CMPs). In the first part, the proposed DRM algorithm takes both the computational and the communication components of the CMP into consideration and combines thread migration and dynamic voltage and frequency scaling (DVFS) as the two primary techniques to change the CMP operation. The goal is to increase the lifetime reliability of the overall system to the desired target with minimal performance degradation. The simulation results on a variety of benchmarks on 16 and 64 core NoC based CMP architectures demonstrate that lifetime reliability can be improved by 100% for an average performance penalty of 7.7% and 8.7% for the two CMP architectures. In the second part of this dissertation, we first propose novel algorithms that employ Kalman filtering and long short term memory (LSTM) for workload prediction. These predictions are then used as the basis on which voltage/frequency (V/F) pairs are selected for each core by an effective dynamic voltage and frequency scaling algorithm whose objective is to reduce energy consumption but without degrading performance beyond the user set threshold. Secondly, we investigate the use of deep neural network (DNN) models for energy optimization under performance constraints in CMPs. The proposed algorithm is implemented in three phases. The first phase collects the training data by employing Kalman filtering for workload prediction and an efficient heuristic algorithm based on DVFS. The second phase represents the training process of the DNN model and in the last phase, the DNN model is used to directly identify V/F pairs that can achieve lower energy consumption without performance degradation beyond the acceptable threshold set by the user. Simulation results on 16 and 64 core NoC based architectures demonstrate that the proposed approach can achieve up to 55% energy reduction for 10% performance degradation constraints. Simulation experiments compare the proposed algorithm against existing approaches based on reinforcement learning and Kalman filtering and show that the proposed DNN technique provides average improvements in energy-delay-product (EDP) of 6.3% and 6% for the 16 core architecture and of 7.4% and 5.5% for the 64 core architecture

    Cross-Layer Approaches for an Aging-Aware Design of Nanoscale Microprocessors

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    Thanks to aggressive scaling of transistor dimensions, computers have revolutionized our life. However, the increasing unreliability of devices fabricated in nanoscale technologies emerged as a major threat for the future success of computers. In particular, accelerated transistor aging is of great importance, as it reduces the lifetime of digital systems. This thesis addresses this challenge by proposing new methods to model, analyze and mitigate aging at microarchitecture-level and above

    Thermal Management for Dependable On-Chip Systems

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    This thesis addresses the dependability issues in on-chip systems from a thermal perspective. This includes an explanation and analysis of models to show the relationship between dependability and tempature. Additionally, multiple novel methods for on-chip thermal management are introduced aiming to optimize thermal properties. Analysis of the methods is done through simulation and through infrared thermal camera measurements

    A Study of Nanometer Semiconductor Scaling Effects on Microelectronics Reliability

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    The desire to assess the reliability of emerging scaled microelectronics technologies through faster reliability trials and more accurate acceleration models is the precursor for further research and experimentation in this relevant field. The effect of semiconductor scaling on microelectronics product reliability is an important aspect to the high reliability application user. From the perspective of a customer or user, who in many cases must deal with very limited, if any, manufacturer's reliability data to assess the product for a highly-reliable application, product-level testing is critical in the characterization and reliability assessment of advanced nanometer semiconductor scaling effects on microelectronics reliability. This dissertation provides a methodology on how to accomplish this and provides techniques for deriving the expected product-level reliability on commercial memory products. Competing mechanism theory and the multiple failure mechanism model are applied to two separate experiments; scaled SRAM and SDRAM products. Accelerated stress testing at multiple conditions is applied at the product level of several scaled memory products to assess the performance degradation and product reliability. Acceleration models are derived for each case. For several scaled SDRAM products, retention time degradation is studied and two distinct soft error populations are observed with each technology generation: early breakdown, characterized by randomly distributed weak bits with Weibull slope Beta=1, and a main population breakdown with an increasing failure rate. Retention time soft error rates are calculated and a multiple failure mechanism acceleration model with parameters is derived for each technology. Defect densities are calculated and reflect a decreasing trend in the percentage of random defective bits for each successive product generation. A normalized soft error failure rate of the memory data retention time in FIT/Gb and FIT/cm2 for several scaled SDRAM generations is presented revealing a power relationship. General models describing the soft error rates across scaled product generations are presented. The analysis methodology may be applied to other scaled microelectronic products and key parameters

    AI/ML Algorithms and Applications in VLSI Design and Technology

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    An evident challenge ahead for the integrated circuit (IC) industry in the nanometer regime is the investigation and development of methods that can reduce the design complexity ensuing from growing process variations and curtail the turnaround time of chip manufacturing. Conventional methodologies employed for such tasks are largely manual; thus, time-consuming and resource-intensive. In contrast, the unique learning strategies of artificial intelligence (AI) provide numerous exciting automated approaches for handling complex and data-intensive tasks in very-large-scale integration (VLSI) design and testing. Employing AI and machine learning (ML) algorithms in VLSI design and manufacturing reduces the time and effort for understanding and processing the data within and across different abstraction levels via automated learning algorithms. It, in turn, improves the IC yield and reduces the manufacturing turnaround time. This paper thoroughly reviews the AI/ML automated approaches introduced in the past towards VLSI design and manufacturing. Moreover, we discuss the scope of AI/ML applications in the future at various abstraction levels to revolutionize the field of VLSI design, aiming for high-speed, highly intelligent, and efficient implementations

    Solid State Circuits Technologies

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    The evolution of solid-state circuit technology has a long history within a relatively short period of time. This technology has lead to the modern information society that connects us and tools, a large market, and many types of products and applications. The solid-state circuit technology continuously evolves via breakthroughs and improvements every year. This book is devoted to review and present novel approaches for some of the main issues involved in this exciting and vigorous technology. The book is composed of 22 chapters, written by authors coming from 30 different institutions located in 12 different countries throughout the Americas, Asia and Europe. Thus, reflecting the wide international contribution to the book. The broad range of subjects presented in the book offers a general overview of the main issues in modern solid-state circuit technology. Furthermore, the book offers an in depth analysis on specific subjects for specialists. We believe the book is of great scientific and educational value for many readers. I am profoundly indebted to the support provided by all of those involved in the work. First and foremost I would like to acknowledge and thank the authors who worked hard and generously agreed to share their results and knowledge. Second I would like to express my gratitude to the Intech team that invited me to edit the book and give me their full support and a fruitful experience while working together to combine this book
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