Imperfection-Aware Design of CNFET Digital VLSI Circuits

Carbon nanotube field-effect transistor (CNFET) is one of the promising candidates as extensions to silicon CMOS devices. The CNFET, which is a 1-D structure with a near-ballistic transport capability, can potentially offer excellent device characteristics and order-of-magnitude better energy-delay product over standard CMOS devices. Significant challenges in CNT synthesis prevent CNFETs today from achieving such ideal benefits. CNT density variation and metallic CNTs are the dominant type of CNT variations/imperfections that cause performance variation, large static power consumption, and yield degradation. We present an imperfection-aware design technique for CNFET digital VLSI circuits by: 1) Analytical models that are developed to analyze and quantify the effects of CNT density variation on device characteristics, gate and system levels delays. The analytical models, which were validated by comparison to real experimental/simulation data, enables us to examine the space of CNFET combinational, sequential and memory cells circuits to minimize delay variations. Using these model, we drive CNFET processing and circuit design guidelines to manage/overcome CNT density variation. 2) Analytical models that are developed to analyze the effects of metallic CNTs on device characteristics, gate and system levels delay and power consumption. Using our presented analytical models, which are again validated by comparison with simulation data, it is shown that the static power dissipation is a more critical issue than the delay and the dynamic power of CNFET circuits in the presence of m-CNTs. 3) CNT density variation and metallic CNTs can result in functional failure of CNFET circuits. The complete and compact model for CNFET probability of failure that consider CNT density variation and m-CNTs is presented. This analytical model is applied to analyze the logical functional failures. The presented model is extended to predict opportunities and limitations of CNFET technology at todays Gigascale integration and beyond.\u2

Crosstalk computing: circuit techniques, implementation and potential applications

Title from PDF of title [age viewed January 32, 2022Dissertation advisor: Mostafizur RahmanVitaIncludes bibliographical references (page 117-136)Thesis (Ph.D.)--School of Computing and Engineering. University of Missouri--Kansas City, 2020This work presents a radically new computing concept for digital Integrated Circuits (ICs), called Crosstalk Computing. The conventional CMOS scaling trend is facing device scaling limitations and interconnect bottleneck. The other primary concern of miniaturization of ICs is the signal-integrity issue due to Crosstalk, which is the unwanted interference of signals between neighboring metal lines. The Crosstalk is becoming inexorable with advancing technology nodes. Traditional computing circuits always tries to reduce this Crosstalk by applying various circuit and layout techniques. In contrast, this research develops novel circuit techniques that can leverage this detrimental effect and convert it astutely to a useful feature. The Crosstalk is engineered into a logic computation principle by leveraging deterministic signal interference for innovative circuit implementation. This research work presents a comprehensive circuit framework for Crosstalk Computing and derives all the key circuit elements that can enable this computing model. Along with regular digital logic circuits, it also presents a novel Polymorphic circuit approach unique to Crosstalk Computing. In Polymorphic circuits, the functionality of a circuit can be altered using a control variable. Owing to the multi-functional embodiment in polymorphic-circuits, they find many useful applications such as reconfigurable system design, resource sharing, hardware security, and fault-tolerant circuit design, etc. This dissertation shows a comprehensive list of polymorphic logic gate implementations, which were not reported previously in any other work. It also performs a comparison study between Crosstalk polymorphic circuits and existing polymorphic approaches, which are either inefficient due to custom non-linear circuit styles or propose exotic devices. The ability to design a wide range of polymorphic logic circuits (basic and complex logics) compact in design and minimal in transistor count is unique to Crosstalk Computing, which leads to benefits in the circuit density, power, and performance. The circuit simulation and characterization results show a 6x improvement in transistor count, 2x improvement in switching energy, and 1.5x improvement in performance compared to counterpart implementation in CMOS circuit style. Nevertheless, the Crosstalk circuits also face issues while cascading the circuits; this research analyzes all the problems and develops auxiliary circuit techniques to fix the problems. Moreover, it shows a module-level cascaded polymorphic circuit example, which also employs the auxiliary circuit techniques developed. For the very first time, it implements a proof-of-concept prototype Chip for Crosstalk Computing at TSMC 65nm technology and demonstrates experimental evidence for runtime reconfiguration of the polymorphic circuit. The dissertation also explores the application potentials for Crosstalk Computing circuits. Finally, the future work section discusses the Electronic Design Automation (EDA) challenges and proposes an appropriate design flow; besides, it also discusses ideas for the efficient implementation of Crosstalk Computing structures. Thus, further research and development to realize efficient Crosstalk Computing structures can leverage the comprehensive circuit framework developed in this research and offer transformative benefits for the semiconductor industry.Introduction and Motivation -- More Moore and Relevant Beyond CMOS Research Directions -- Crosstalk Computing -- Crosstalk Circuits Based on Perception Model -- Crosstalk Circuit Types -- Cascading Circuit Issues and Sollutions -- Existing Polymorphic Circuit Approaches -- Crosstalk Polymorphic Circuits -- Comparison and Benchmarking of Crosstalk Gates -- Practical Realization of Crosstalk Gates -- Poential Applications -- Conclusion and Future Wor

Null Convention Logic applications of asynchronous design in nanotechnology and cryptographic security

This dissertation presents two Null Convention Logic (NCL) applications of asynchronous logic circuit design in nanotechnology and cryptographic security. The first application is the Asynchronous Nanowire Reconfigurable Crossbar Architecture (ANRCA); the second one is an asynchronous S-Box design for cryptographic system against Side-Channel Attacks (SCA). The following are the contributions of the first application: 1) Proposed a diode- and resistor-based ANRCA (DR-ANRCA). Three configurable logic block (CLB) structures were designed to efficiently reconfigure a given DR-PGMB as one of the 27 arbitrary NCL threshold gates. A hierarchical architecture was also proposed to implement the higher level logic that requires a large number of DR-PGMBs, such as multiple-bit NCL registers. 2) Proposed a memristor look-up-table based ANRCA (MLUT-ANRCA). An equivalent circuit simulation model has been presented in VHDL and simulated in Quartus II. Meanwhile, the comparison between these two ANRCAs have been analyzed numerically. 3) Presented the defect-tolerance and repair strategies for both DR-ANRCA and MLUT-ANRCA. The following are the contributions of the second application: 1) Designed an NCL based S-Box for Advanced Encryption Standard (AES). Functional verification has been done using Modelsim and Field-Programmable Gate Array (FPGA). 2) Implemented two different power analysis attacks on both NCL S-Box and conventional synchronous S-Box. 3) Developed a novel approach based on stochastic logics to enhance the resistance against DPA and CPA attacks. The functionality of the proposed design has been verified using an 8-bit AES S-box design. The effects of decision weight, bitstream length, and input repetition times on error rates have been also studied. Experimental results shows that the proposed approach enhances the resistance to against the CPA attack by successfully protecting the hidden key --Abstract, page iii

Methods and architectures based on modular redundancy for fault-tolerant combinational circuits

Dans cette thèse, nous nous intéressons à la recherche d architectures fiables pour les circuits logiques. Par fiable , nous entendons des architectures permettant le masquage des fautes et les rendant de ce fait tolérantes" à ces fautes. Les solutions pour la tolérance aux fautes sont basées sur la redondance, d où le surcoût qui y est associé. La redondance peut être mise en oeuvre de différentes manières : statique ou dynamique, spatiale ou temporelle. Nous menons cette recherche en essayant de minimiser tant que possible le surcoût matériel engendré par le mécanisme de tolérance aux fautes. Le travail porte principalement sur les solutions de redondance modulaire, mais certaines études développées sont beaucoup plus générales.In this thesis, we mainly take into account the representative technique Triple Module Redundancy (TMR) as the reliability improvement technique. A voter is an necessary element in this kind of fault-tolerant architectures. The importance of reliability in majority voter is due to its application in both conventional fault-tolerant design and novel nanoelectronic systems. The property of a voter is therefore a bottleneck since it directly determines the whole performance of a redundant fault-tolerant digital IP (such as a TMR configuration). Obviously, the efficacy of TMR is to increase the reliability of digital IP. However, TMR sometimes could result in worse reliability than a simplex function module could. A better understanding of functional and signal reliability characteristics of a 3-input majority voter (majority voting in TMR) is studied. We analyze them by utilizing signal probability and boolean difference. It is well known that the acquisition of output signal probabilities is much easier compared with the obtention of output reliability. The results derived in this thesis proclaim the signal probability requirements for inputs of majority voter, and thereby reveal the conditions that TMR technique requires. This study shows the critical importance of error characteristics of majority voter, as used in fault-tolerant designs. As the flawlessness of majority voter in TMR is not true, we also proposed a fault-tolerant and simple 2-level majority voter structure for TMR. This alternative architecture for majority voter is useful in TMR schemes. The proposed solution is robust to single fault and exceeds those previous ones in terms of reliability.PARIS-Télécom ParisTech (751132302) / SudocSudocFranceF

Reliable chip design from low powered unreliable components

The pace of technological improvement of the semiconductor market is driven by Moore’s Law, enabling chip transistor density to double every two years. The transistors would continue to decline in cost and size but increase in power. The continuous transistor scaling and extremely lower power constraints in modern Very Large Scale Integrated(VLSI) chips can potentially supersede the benefits of the technology shrinking due to reliability issues. As VLSI technology scales into nanoscale regime, fundamental physical limits are approached, and higher levels of variability, performance degradation, and higher rates of manufacturing defects are experienced. Soft errors, which traditionally affected only the memories, are now also resulting in logic circuit reliability degradation. A solution to these limitations is to integrate reliability assessment techniques into the Integrated Circuit(IC) design flow. This thesis investigates four aspects of reliability driven circuit design: a)Reliability estimation; b) Reliability optimization; c) Fault-tolerant techniques, and d) Delay degradation analysis. To guide the reliability driven synthesis and optimization of combinational circuits, highly accurate probability based reliability estimation methodology christened Conditional Probabilistic Error Propagation(CPEP) algorithm is developed to compute the impact of gate failures on the circuit output. CPEP guides the proposed rewriting based logic optimization algorithm employing local transformations. The main idea behind this methodology is to replace parts of the circuit with functionally equivalent but more reliable counterparts chosen from a precomputed subset of Negation-Permutation-Negation(NPN) classes of 4-variable functions. Cut enumeration and Boolean matching driven by reliability-aware optimization algorithm are used to identify the best possible replacement candidates. Experiments on a set of MCNC benchmark circuits and 8051 functional microcontroller units indicate that the proposed framework can achieve up to 75% reduction of output error probability. On average, about 14% SER reduction is obtained at the expense of very low area overhead of 6.57% that results in 13.52% higher power consumption. The next contribution of the research describes a novel methodology to design fault tolerant circuitry by employing the error correction codes known as Codeword Prediction Encoder(CPE). Traditional fault tolerant techniques analyze the circuit reliability issue from a static point of view neglecting the dynamic errors. In the context of communication and storage, the study of novel methods for reliable data transmission under unreliable hardware is an increasing priority. The idea of CPE is adapted from the field of forward error correction for telecommunications focusing on both encoding aspects and error correction capabilities. The proposed Augmented Encoding solution consists of computing an augmented codeword that contains both the codeword to be transmitted on the channel and extra parity bits. A Computer Aided Development(CAD) framework known as CPE simulator is developed providing a unified platform that comprises a novel encoder and fault tolerant LDPC decoders. Experiments on a set of encoders with different coding rates and different decoders indicate that the proposed framework can correct all errors under specific scenarios. On average, about 1000 times improvement in Soft Error Rate(SER) reduction is achieved. Last part of the research is the Inverse Gaussian Distribution(IGD) based delay model applicable to both combinational and sequential elements for sub-powered circuits. The Probability Density Function(PDF) based delay model accurately captures the delay behavior of all the basic gates in the library database. The IGD model employs these necessary parameters, and the delay estimation accuracy is demonstrated by evaluating multiple circuits. Experiments results indicate that the IGD based approach provides a high matching against HSPICE Monte Carlo simulation results, with an average error less than 1.9% and 1.2% for the 8-bit Ripple Carry Adder(RCA), and 8-bit De-Multiplexer(DEMUX) and Multiplexer(MUX) respectively

Graphene Nanotechnology the Next Generation Logic, Memory and 3D Integrated Circuits

Title from PDF of title page viewed August 28, 2017Dissertation advisor: Masud H. ChowdhuryVitaIncludes bibliographical references (pages 120-136)Thesis (Ph.D.)--School of Computing and Engineering. University of Missouri--Kansas City, 2016Floating gate transistor is the basic building block of non-volatile flash memory, which is one of the most widely used memory gadgets in modern micro and nano electronic applications. Recently there has been a surge of interest to introduce a new generation of memory devices using graphene nanotechnology. In this paper we present a new floating gate transistor (FGT) design based on multilayer graphene nanoribbon (MLGNR) and carbon nanotube (CNT). In the proposed graphene based floating gate transistor (GFGT) a multilayer structure of graphene nanoribbon (GNR) would be used as the channel of the field effect transistor (FET) and a layer of CNTs would be used as the floating gate. We have performed an analysis of the charge accumulation mechanism in the floating gate and its dependence on the applied terminal voltages. Based on our analysis we have observed that proposed graphene based floating gate transistor could be operated at a reduced voltage compared to conventional silicon based floating gate devices. We have presented detail analysis of the operation and the programming and erasing processes of the proposed FGT, dependency of the programming and erasing current density on different parameters, impact of scaling the thicknesses of the control and tunneling oxides. These analyses are done based on the equivalent capacitance model of the device. We have analyze the programming and erasing by the tunneling current mechanism in the proposed graphene-CNT floating gate transistor. In this paper, we have investigated the mechanism of programming current and the factors that would influence this current and the behavior of the proposed floating gate transistor. The analysis reveals that programming is a strong function of the high field induced by the control gate, and the thicknesses of the control oxide and the tunnel oxide. With the growing demand for nonvolatile flash memory devices and increasing limitations of silicon technologies, there has been a growing interest to develop emerging flash memory by using alternative nanotechnology. The proposed FGT device for nonvolatile flash memory contains an MLGNR channel and a CNT floating gate with SiO₂ as the tunnel oxide. In this paper, we have presented detail analysis of the electrical properties and performance characteristics of the proposed FGT device. We have focused on the following aspects: current voltage (I-V) characteristics, threshold voltage variation (∆VTH), programming, erasing and reading power consumptions compared to the existing FGTs, and layer-by-layer current voltage characteristics comparison of the proposed GFGT device. To realize graphene field effect transistor (GFET), a general model is developed, validated and analyzed. This model is also used to estimate graphene channel behavior of the proposed GFGT. Reliability is the major concern of the Flash memory technology. We have analyzed retention characteristics of the proposed GFGT. We also have developed a radiation harness test model for the Si-FGT by using VTH variation principle due to the radiation exposure. Flash memory experiences adverse effects due to radiation. These effects can be raised in terms of doping, feature size, supply voltages, layout, shielding. The operating point shift of the device forced to enter the logically-undefined region and cause upset and data errors under radiation exposure. In this research, the threshold voltage shift of the floating gate transistor (FGT) is analyzed by a mathematical model. Molybdenum disulfide (MoS2) based field effect transistor is considered as one of the promising future logic devices. Many other nanoelectronic devices based on MoS2 are currently under investigation. However, the challenge of providing reliable and efficient contact between 2D materials like MoS2 and the metal is still unresolved. The contact resistance between metal and MoS2 limits the application of MoS2 in current semiconductor technologies. In this paper, a detail analysis of metal-MoS2 contact has been presented. Specific contributions of this work are:investigation of the physical, material and electrical parameters that would determine the contact properties, analysis of the combined impact of the top and back gates for the first time, modeling of the crucial metal-MoS2 contact parameters, such as, sheet resistance (RSh), contact resistivity (ρc), contact resistance (RC) and transfer length (LT), investigation of the ways to incorporate the developed contact model into the electronic design automation (EDA) tools and investigation of different contact materials for the metal-MoS2 contact. The three dimensional integrated circuit (3D- IC) is expected to extend Moore's law. To reduce interconnects and time delay, semiconductor industry is shifting 2D-IC to 2.5D-IC and 3D-IC. 3D-IC is the ultimate goal of the semiconductor industry, where 2.5D-IC is an intermediate state. It is important to realize CAD design challenges of the 2.5D-IC/3D-IC when minimum spacing interconnects are used. The major contributions of this research work are as follows. Previously, for the small scale experimental purpose, small numbers (10-20) of TSVs, interconnects, bumps are fabricated together by hand calculation. However in the real 3D-IC design, thousands of TSVs, interconnects, bumps are reuired. Therefore, an automated CAD solution is required to provide precise physical design and verification. Therefore, a solid CAD solution is provided here. Compatible with 40nm-technology design, which enables the Silicon Interposer to integrate with the digital, analog and RF dies together. Dimensions and spacing of the TSV and Bump are optimized by the 3D EM full wave field solver. To our best knowledge, at the interposer level, this design reports the most dense and well-defined RDL, TSV and micro-bump co-design on Silicon Interposer, which will be used for 2.5D-IC.Introduction and background -- Proposed Graphene Based Flash Memory -- Physical and Electrical Parameters of the Proposed Graphene Flash Memory Device -- Programming and Erasing Operation of the Proposed Graphene Flash Memory Device -- Reliability Analysis of the Proposed Graphene Flash Memory Device -- Radiation Hardness Analysis of the Floating Gate Transistor -- Benchmarking of the Proposed Graphene Flash Memory Device -- Graphene Field Effect Transistor (GFET) Generalized Model -- MoS2 FET Device and Contact Characterization and Modelling based on Modified Transfer Length Method (TLM) -- 2.5D Silicon Interposer Design in 40nm-Technology for 2D-IC and 3D-IC -- Conclusion and Future Wor

Multi-criteria optimization for energy-efficient multi-core systems-on-chip

The steady down-scaling of transistor dimensions has made possible the evolutionary progress leading to today’s high-performance multi-GHz microprocessors and core based System-on-Chip (SoC) that offer superior performance, dramatically reduced cost per function, and much-reduced physical size compared to their predecessors. On the negative side, this rapid scaling however also translates to high power densities, higher operating temperatures and reduced reliability making it imperative to address design issues that have cropped up in its wake. In particular, the aggressive physical miniaturization have increased CMOS fault sensitivity to the extent that many reliability constraints pose threat to the device normal operation and accelerate the onset of wearout-based failures. Among various wearout-based failure mechanisms, Negative biased temperature instability (NBTI) has been recognized as the most critical source of device aging. The urge of reliable, low-power circuits is driving the EDA community to develop new design techniques, circuit solutions, algorithms, and software, that can address these critical issues. Unfortunately, this challenge is complicated by the fact that power and reliability are known to be intrinsically conflicting metrics: traditional solutions to improve reliability such as redundancy, increase of voltage levels, and up-sizing of critical devices do contrast with traditional low-power solutions, which rely on compact architectures, scaled supply voltages, and small devices. This dissertation focuses on methodologies to bridge this gap and establishes an important link between low-power solutions and aging effects. More specifically, we proposed new architectural solutions based on power management strategies to enable the design of low-power, aging aware cache memories. Cache memories are one of the most critical components for warranting reliable and timely operation. However, they are also more susceptible to aging effects. Due to symmetric structure of a memory cell, aging occurs regardless of the fact that a cell (or word) is accessed or not. Moreover, aging is a worst-case matric and line with worst-case access pattern determines the aging of the entire cache. In order to stop the aging of a memory cell, it must be put into a proper idle state when a cell (or word) is not accessed which require proper management of the idleness of each atomic unit of power management. We have proposed several reliability management techniques based on the idea of cache partitioning to alleviate NBTI-induced aging and obtain joint energy and lifetime benefits. We introduce graceful degradation mechanism which allows different cache blocks into which a cache is partitioned to age at different rates. This implies that various sub-blocks become unreliable at different times, and the cache keeps functioning with reduced efficiency. We extended the capabilities of this architecture by integrating the concept of reconfigurable caches to maintain the performance of the cache throughout its lifetime. By this strategy, whenever a block becomes unreliable, the remaining cache is reconfigured to work as a smaller size cache with only a marginal degradation of performance. Many mission-critical applications require guaranteed lifetime of their operations and therefore the hardware implementing their functionality. Such constraints are usually enforced by means of various reliability enhancing solutions mostly based on redundancy which are not energy-friendly. In our work, we have proposed a novel cache architecture in which a smart use of cache partitions for redundancy allows us to obtain cache that meet a desired lifetime target with minimal energy consumption