89 research outputs found

    Microwave class-E power amplifiers: a brief review of essential concepts in high-frequency class-E PAs and related circuits

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    Since Nathan Sokal's invention of the class-E power amplifier (PA), the vast majority of class-E results have been reported at kilohertz and millihertz frequencies, but the concept is increasingly applied in the ultrahigh-frequency (UHF) [1]-[13], microwave [14]-[20], and even millimeter-wave range [21]. The goal of this article is to briefly review some interesting concepts concerning high-frequency class-E PAs and related circuits. (The article on page 26 of this issue, "A History of Switching-Mode Class-E Techniques" by Andrei Grebennikov and Frederick H. Raab, provides a historical overview of class-E amplifier development.)We acknowledge support, in part, by a Lockheed Martin Endowed Chair at the University of Colorado and in part by the Spanish Ministry of Economy, Industry, and Competitiveness (MINECO) through TEC2014-58341-C4-1-R and TEC2017-83343-C4-1-R projects, cofunded with FEDER

    Microwave class-E power amplifiers

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    This paper reviews circuit architectures and demonstrated class-E power amplifiers in the UHF and microwave frequency range. Scaling class-E soft-switching operation to high frequencies presents a number of challenges, particularly in the control of parasitic reactances of the device and the circuit. Different approaches have been taken, from using parasitics of lumped elements to provide the correct fundamental and harmonic impedances in the UHF range, to transmission-line implementations at frequencies above 10GHz

    Microwave and Millimeter-Wave Signal Power Generation

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    Design of Integrated Circuits Approaching Terahertz Frequencies

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    Integration of broadband direct-conversion quadrature modulators

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    To increase spectral efficiency, transmitters usually send only one of the information carrying sidebands centered around a single radio-frequency carrier. The close-lying mirror, or image, sideband will be eliminated either by the filtering method or by the phasing method. Since filter Q-values rise in direct relation to the transmitted frequencies, the filtering method is generally not feasible for integrated microwave transmitters. A quadrature modulator realizes the phasing method by combining signals phased at quadrature (i.e. at 90° offsets) to produce a single-sideband (SSB) output. In this way output filtering can be removed or its specifications greatly relieved so as to produce an economical microwave transmitter. The proliferation of integrated circuit (IC) technologies since the 1980s has further boosted the popularity of quadrature modulator as an IC realization makes possible the economical production of two closely matched doubly balanced mixers, which suppress carrier and even-order spurious leakage to circuit output. Another strength of IC is its ability to perform microwave quadrature generation accurately on-chip, and thereby to avoid most of the interconnect parasitics which could ruin high-frequency quadrature signaling. Nevertheless, all quadrature modulator implementations are sensitive to phasing and amplitude errors, which are born as a result of mismatches, from the use of inaccurate differential signaling, and from inadequacies in the phasing circuitry itself. A 2° phase error is easily produced, and it reduces the image-rejection ratio (IRR) to −30 dBc. Therefore, as baseband signals synthesized by digital signal processing (DSP) are sufficiently accurate, this thesis concentrates on analyzing and producing the microwave signal path of a direct-conversion quadrature modulator with special emphasis on broadband, multimode radio-compatible operation. A model of the direct-conversion quadrature modulator operation has been developed, which reveals the effect the circuit non-linearities and mismatch-related offsets have on available performance. Further, theoretical proof is given of the well-known property of improving differential signal balance that cascaded differential pairs exhibit. Among the practical results, a current reuse mixer has been developed, which improves the transmitted signal-to-noise-ratio (SNR) by 3 dB, with a maximum measured dynamic range of +158 dB. The complementary bipolar process was further used to extend the bipolar push-pull stage bandwidth to 9.5 GHz. At the core of this work is the parallel switchable polyphase (PP) filter quadrature generator that was developed, since it makes possible accurate broadband IQ generation without the high loss that usually results from the application of PP filtering. Two IQ modulator prototypes were realized to test simulated and theoretically derived data: the 0.8 µm SiGe IC achieves an IRR better than −40 dBc over 0.75-3.6 GHz, while the 0.13 µm digital bulk CMOS IC achieves better than −37 dBc over 0.56-4.76 GHz. For this IRR performance the SiGe prototype boasts the inexpensive solution of integrated baluns, while the CMOS one utilizes a coil-transmission line hybrid transformer at its LO input to drive the switchable PP filters.Taajuuksien käytön tehostamiseksi lähettimet lähettävät yleensä vain toisen informaatiota sisältävistä sivukaistoistaan yhdelle radiotaajuuksiselle kantoaallolle keskitettynä. Viereinen peilitaajuus eli sivukaista vaimennetaan joko suodattamalla tai vaiheistamalla signalointia sopivasti. Koska suodattimen hyvyysluvut nousevat suorassa suhteessa käytettyyn taajuuteen, ei suodatusmenetelmä ole yleensä mahdollinen mikroaaltotaajuusalueen lähettimissä. Kvadratuurimodulaattori toteuttaa vaiheistusmenetelmän yhdistämällä 90-asteen vaihesiirroksin vaiheistetut signaalit yksisivukaistaisen lähetteen tuottamiseksi. Näin voidaan korvata lähdön suodatus joko kokonaan tai lieventämällä vaadittavia suoritusarvoja, jolloin mikroaaltoalueen lähetin voidaan tuottaa taloudellisesti. Integroitujen piiriratkaisujen yleistyminen 1980-luvulta lähtien on edesauttanut kvadratuurimodulaattorin suosiota, koska integroidulle piirille voidaan taloudellisesti tuottaa kaksi hyvin ominaisuuksiltaan toisiaan vastaavaa kaksoisbalansoitua sekoitinta, ja nämä tunnetusti vaimentavat kantoaaltovuotoa ja parillisia harmoonisia piirin lähdössä. Toinen integroitujen piirien vahvuus on kyky tarkkaan mikroaaltoalueen kvadratuurisignalointiin samalla piirillä, jolloin vältetään suurin osa kytkentöjen parasiittisista jotka muutoin voisivat tuhota korkeataajuuksisen 90-asteen vaiheistuksen. Kaikki kvadratuurimodulaattorit ovat joka tapauksessa herkkiä vaiheistus- ja amplitudieroille, joita syntyy komponenttiarvojen satunnaishajonnasta, epätarkan differentiaalisen signaloinnin käytöstä, ja itse vaiheistuspiiristön puutteellisuuksista. Kahden asteen vaihevirhe syntyy helposti, ja tällöin sivukaistavaimennus heikkenee -30 dBc:n tasolle. Tämänvuoksi, ja olettaen että digitaalisella signaaliprosessorilla luotu kantataajuuksinen signalointi on riittävän tarkkaa, tämä väitöskirja keskittyy kvadratuurimodulaattorin mikroaaltotaajuuksisen signaalipolun analysointiin ja tuottamiseen painottaen erityisesti laajakaistaista, monisovellusradioiden kanssa yhteensopivaa toimivuutta. Kvadratuurimodulaattorin toimintamallia on kehitetty siten, että mallissa huomioidaan epälineaarisuuksien ja piirielementtien satunnaishajontojen vaikutus saavutettavalle suorituskyvylle. Lisäksi on teoreettisesti todistettu sinänsä hyvin tunnettu peräkkäin kytkettyjen vahvistinasteiden differentiaalisen signaloinnin symmetrisyyttä parantava vaikutus. Käytännön tuloksista voidaan mainita kehitetty virtaakierrättävä sekoitin, joka parantaa signaali-kohinasuhdetta +3 dB, suurimman mitatun dynaamisen alueen ollessa +158 dB. Samaa komplementaarista bipolaariprosessia käytettiin edelleen bipolaarisen vuorovaihe-asteen kaistan levittämisessä 9.5 GHz:iin. Yhtenä tämän työn tärkeimmistä tuloksista on kehitetty kytkimin valittavista rinnakkaisista monivaihesuodattimista koostuva kvadratuurigeneraattori, jolla on mahdollista tuottaa laajakaistaista IQ-signalointia ilman suurta häviötä joka yleensä liittyy monivaihesuodattimien käyttöön. Kaksi IQ-modulaattoriprototyyppiä toteutettiin simuloitujen ja teoreettisesti mallinnettujen tulosten testaamiseksi: 0.8 µm SiGe integroitu piiri saavuttaa paremman sivukaistavaimennuksen kuin -40 dBc yli 0.75-3.6 GHz, kun taas 0.13 µm digitaalipiirien tuottamiseen tarkoitetulla CMOS prosessilla toteutettu integroitu piiri saavuttaa paremman sivukaistavaimennuksen kuin -37 dBc taajuusalueella 0.56-4.76 GHz. Näihin sivukaistavaimennuksiin SiGe prototyyppi pääsee edullisesti integroiduin symmetrointimuuntajin, kun taas CMOS piirillä käytetään kela-siirtojohto-tyyppistä yhdistelmämuuntajaa LO-sisääntulossa josta ajetaan erikseen kytkettäviä monivaihesuodattimia.reviewe

    Sensores passivos alimentados por transmissão de energia sem fios para aplicações de Internet das coisas

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    Nowadays, the Wireless Sensor Networks (WSNs) depend on the battery duration of the sensors and there is a renewed interest in creating a passive sensor network scheme in the area of Internet of Things (IoT) and space oriented WSN systems. The challenges for the future of radio communications have a twofold evolution, one being the low power consumption and, another, the adaptability and intelligent use of the available resources. Specially designed radios should be used to reduce power consumption, and adapt to the environment in a smart and e cient way. This thesis will focus on the development of passive sensors based on low power communication (backscatter) with Wireless Power Transfer (WPT) capabilities used in IoT applications. In that sense, several high order modulations for the communication will be explored and proposed in order to increase the data rate. Moreover, the sensors need to be small and cost e ective in order to be embedded in other technologies or devices. Consequently, the RF front-end of the sensors will be designed and implemented in Monolithic Microwave Integrated Circuit (MMIC).Atualmente, as redes de sensores sem fios dependem da duração da bateria e,deste modo, existe um interesse renovado em criar um esquema de rede de sensores passivos na área de internet das coisas e sistemas de redes de sensores sem fios relacionados com o espaço. Os desafios do futuro das comunicações de rádio têm uma dupla evolução, sendo um o baixo consumo de energia e, outro, a adaptação e o uso inteligente dos recursos disponíveis. Rádios diferentes dos convencionais devem ser usados para reduzir o consumo de energia e devem adaptar-se ao ambiente de forma inteligente e eficiente, de modo a que este use a menor quantidade de energia possível para estabelecer a comunicação. Esta tese incide sobre o desenvolvimento de sensores passivos baseados em comunicação de baixo consumo energético (backscatter) com recurso a transmissão de energia sem fios de modo a que possam ser usados em diferentes aplicações inseridas na internet das coisas. Nesse sentido, várias modulações de alta ordem para a comunicação backscatter serão exploradas e propostas com o objectivo de aumentar a taxa de transmissão de dados. Além disso, os sensores precisam de ser reduzidos em tamanho e económicos de modo a serem incorporados em outras tecnologias ou dispositivos. Consequentemente, o front-end de rádio frequência dos sensores será projetado e implementado em circuito integrado de microondas monolítico.Programa Doutoral em Engenharia Eletrotécnic

    Diseño a 2.45GHz de un amplificador de potencia GaN HEMT de clase A : resumen en español

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    Hoy en día, la amplificación de estado sólido está dominada por el uso de transistores de tres terminales. Usando un pequeño voltaje aplicado en la entrada del dispositivo, uno puede controlar, de manera eficiente, una gran cantidad de corriente en el terminal de salida cuando el terminal común está conectado a tierra. Este es el origen del nombre transistor, que es la union de las palabras inglesas transfer y resistor. Gracias a los transistores, la amplificación existe y este proyecto está enfocado en el proceso de diseño que un ingeniero debe seguir para llevarlo a cabo, desde las primeras simulaciones hasta su testeo en el laboratorio.Escuela Técnica Superior de Ingeniería IndustrialUniversidad Politécnica de Cartagen

    Capacitance to voltage converter design for biosensor applications

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    Due to advances in MEMS fabrication, Lab-on-Chip (LoC) technology gained great progress. LoC refers to small chips that might do similar works to equipped laboratory. Miniaturization of laboratory platform results in low area, low sampleconsumption and less measurement time. Hence, LoC with IC integration finds numerous implementations in biomedical applications. Electrochemical biosensors are preferred for LoC applications because electrochemical biosensors can be easily integrated into IC designs due to electrode-based transducing. Capacitive biosensors are distinctive in electrochemical biosensors because of their reliability and sensitivity advantages. Therefore Interdigitated electrode (IDE) capacitor based biosensor system is preferred for development of biosensor platform. In this thesis, capacitive biosensor system with new Capacitance to Voltage Converter (CVC) designs for LoC applications is presented. Multiple IDE capacitor sensing and varactor-based compensation are new ideas that are presented in this thesis. Proposed system consists of five blocks; IDE Capacitor based tranducer, CVC, Low-Pass Filter, Linear LC-Tank Voltage Controlled Oscillator (VCO) and Class-E Power Amplifier (PA). System building blocks are designed and fabricated using IHP's 0.25 µm SiGe BiCMOS process because of its advantage at high frequency and post-process that IHP offers. Varactor tunable CVC design provides highly linear relationship between output voltage and capacitance change in sensing capacitor. Varactor is used in reference capacitor to compensate changes in sensing capacitor. Total chip area is 0.4 mm2 including pads. 10 MHz operating frequency is achieved. Total power consumption changes between 441 µW and 1,037 mW depending on the sensor capacitance

    Integrated RF oscillators and LO signal generation circuits

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    This thesis deals with fully integrated LC oscillators and local oscillator (LO) signal generation circuits. In communication systems a good-quality LO signal for up- and down-conversion in transmitters is needed. The LO signal needs to span the required frequency range and have good frequency stability and low phase noise. Furthermore, most modern systems require accurate quadrature (IQ) LO signals. This thesis tackles these challenges by presenting a detailed study of LC oscillators, monolithic elements for good-quality LC resonators, and circuits for IQ-signal generation and for frequency conversion, as well as many experimental circuits. Monolithic coils and variable capacitors are essential, and this thesis deals with good structures of these devices and their proper modeling. As experimental test devices, over forty monolithic inductors and thirty varactors have been implemented, measured and modeled. Actively synthesized reactive elements were studied as replacements for these passive devices. At first glance these circuits show promising characteristics, but closer noise and nonlinearity analysis reveals that these circuits suffer from high noise levels and a small dynamic range. Nine circuit implementations with various actively synthesized variable capacitors were done. Quadrature signal generation can be performed with three different methods, and these are analyzed in the thesis. Frequency conversion circuits are used for alleviating coupling problems or to expand the number of frequency bands covered. The thesis includes an analysis of single-sideband mixing, frequency dividers, and frequency multipliers, which are used to perform the four basic arithmetical operations for the frequency tone. Two design cases are presented. The first one is a single-sideband mixing method for the generation of WiMedia UWB LO-signals, and the second one is a frequency conversion unit for a digital period synthesizer. The last part of the thesis presents five research projects. In the first one a temperature-compensated GaAs MESFET VCO was developed. The second one deals with circuit and device development for an experimental-level BiCMOS process. A cable-modem RF tuner IC using a SiGe process was developed in the third project, and a CMOS flip-chip VCO module in the fourth one. Finally, two frequency synthesizers for UWB radios are presented
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