Failure Modes and Mechanisms Analysis of Silicon Power Devices

Silicon power devices are a major reliability concern for power electronics converters. Failure modes, mechanisms, and effects (FMMEA) is a well-established method for identifying and analyzing the critical failure mechanisms and improving the reliability of a system through the process. The effects of the various failure mechanisms (and modes) are system dependent and cannot be identified in isolation. This work establishes a Failure Modes and Mechanisms Analysis (FMMA) for silicon power devices that identifies the relevant failure modes and mechanisms for those components. Following the FMMA, a set of failure analysis case studies of silicon power devices which aid in the identification of failure causes and mechanisms for the FMMA are described. Finally, the criticality of the different mechanisms is discussed based on the severity of a failure within a given system, the occurrence of a failure mechanism for a given component, and the ability to detect a failure using techniques such as PHM, criticality can be identified for the mechanisms

In-situ health monitoring of IGBT power modules in EV applications

Power electronics are an enabling technology and play a critical role in the establishment of an environmentally-friendly and sustainable low carbon economy. The electrification of passenger vehicles is one way of achieving this goal. It is well acknowledged that Electric vehicles (EVs) have inherent advantages over the conventional internal combustion engine (ICE) vehicles owing to the absence of emissions, high efficiency, and quiet and smooth operation. Over the last 20 years, EVs have improved significantly in their system integration, dynamic performance and cost. It has attracted much attention in research communities as well as in the market. In 2011 electric vehicle sales were estimated to reach about 20,000 units worldwide, increasing to more than 500,000 units by 2015 and 1.3 million by 2020 which accounts for 1.8 per cent of the total number of passenger vehicles expected to be sold that year. In general, electric vehicles use electric motors for traction drive, power converters for energy transfer and control, and batteries, fuel cells, ultracapacitors, or flywheels for energy storage. These are the core elements of the electric power drive train and thus are desired to provide high reliability over the lifetime of the vehicle. One of the vulnerable components in an electric power drive train is the IGBT switching devices in an inverter. During the operation, IGBT power modules will experience high mechanical and thermal stresses which lead to bond wire lift-off and solder joint fatigue faults. Theses stresses can lead to malfunctions of the IGBT power modules. A short-circuit or open-circuit in any of the power modules may result in an instantaneous loss of traction power, which is dangerous for the driver and other road users. These reliability issues are very complex in their nature and demand for the development of analytical models and experimental validation. This work is set out to develop an online measurement technique for health monitoring of IGBT and freewheeling diodes inside the power modules. The technique can provide an early warning prior to a power device failure. Bond wire lift-off and solder fatigue are the two most frequently occurred faults in power electronic modules. The former increases the forward voltage drop across the terminals of the power device while the latter increase the thermal resistance of the solder layers. As a result, bond wire lift-off can be detected by a highly sensitive and fast operating in-situ monitoring circuit. Solder joint fatigue is detected by measuring the thermal impedance of the power modules. This thesis focuses on the design and optimisation of the in-situ health monitoring circuit in an attempt to reducing noise, temperature variations and measurement uncertainties. Experimental work is carried out on a set of various IGBT power modules that have been modified to account for different testing requirements. Then the lifetime of the power module can be estimated on this basis. The proposed health monitoring system can be integrated into the existing IGBT driver circuits and can also be applied to other applications such as industrial drives, aerospace and renewable energy.EThOS - Electronic Theses Online ServiceORSSchool of EEEGBUnited Kingdo

In-situ health monitoring of IGBT power modules in EV applications

Power electronics are an enabling technology and play a critical role in the establishment of an environmentally-friendly and sustainable low carbon economy. The electrification of passenger vehicles is one way of achieving this goal. It is well acknowledged that Electric vehicles (EVs) have inherent advantages over the conventional internal combustion engine (ICE) vehicles owing to the absence of emissions, high efficiency, and quiet and smooth operation. Over the last 20 years, EVs have improved significantly in their system integration, dynamic performance and cost. It has attracted much attention in research communities as well as in the market. In 2011 electric vehicle sales were estimated to reach about 20,000 units worldwide, increasing to more than 500,000 units by 2015 and 1.3 million by 2020 which accounts for 1.8 per cent of the total number of passenger vehicles expected to be sold that year. In general, electric vehicles use electric motors for traction drive, power converters for energy transfer and control, and batteries, fuel cells, ultracapacitors, or flywheels for energy storage. These are the core elements of the electric power drive train and thus are desired to provide high reliability over the lifetime of the vehicle. One of the vulnerable components in an electric power drive train is the IGBT switching devices in an inverter. During the operation, IGBT power modules will experience high mechanical and thermal stresses which lead to bond wire lift-off and solder joint fatigue faults. Theses stresses can lead to malfunctions of the IGBT power modules. A short-circuit or open-circuit in any of the power modules may result in an instantaneous loss of traction power, which is dangerous for the driver and other road users. These reliability issues are very complex in their nature and demand for the development of analytical models and experimental validation. This work is set out to develop an online measurement technique for health monitoring of IGBT and freewheeling diodes inside the power modules. The technique can provide an early warning prior to a power device failure. Bond wire lift-off and solder fatigue are the two most frequently occurred faults in power electronic modules. The former increases the forward voltage drop across the terminals of the power device while the latter increase the thermal resistance of the solder layers. As a result, bond wire lift-off can be detected by a highly sensitive and fast operating in-situ monitoring circuit. Solder joint fatigue is detected by measuring the thermal impedance of the power modules. This thesis focuses on the design and optimisation of the in-situ health monitoring circuit in an attempt to reducing noise, temperature variations and measurement uncertainties. Experimental work is carried out on a set of various IGBT power modules that have been modified to account for different testing requirements. Then the lifetime of the power module can be estimated on this basis. The proposed health monitoring system can be integrated into the existing IGBT driver circuits and can also be applied to other applications such as industrial drives, aerospace and renewable energy.EThOS - Electronic Theses Online ServiceORSSchool of EEEGBUnited Kingdo

Fault Diagnosis and Condition Monitoring of Power Electronic Components Using Spread Spectrum Time Domain Reflectometry (SSTDR) and the Concept of Dynamic Safe Operating Area (SOA)

Title from PDF of title page viewed April 1, 2021Dissertation advisors: Faisal Khan and Yong ZengVitaIncludes bibliographical references ( page 117-132)Thesis (Ph.D.)--School of Computing and Engineering and Department of Mathematics and Statistics. University of Missouri--Kansas City, 2021Fault diagnosis and condition monitoring (CM) of power electronic components with a goal of improving system reliability and availability have been one of the major focus areas in the power electronics field in the last decades. Power semiconductor devices such as metal oxide semiconductor field-effect transistor (MOSFET) and insulated-gate bipolar transistor (IGBT) are considered to be the most fragile element of the power electronic systems and their reliability degrades with time due to mechanical and thermo-electrical stresses, which ultimately leads to a complete failure of the overall power conversion systems. Therefore, it is important to know the present state of health (SOH) of the power devices and the remaining useful life (RUL) of a power converter in order to perform preventive scheduled maintenance, which will eventually lead to increased system availability and reduced cost. In conventional practice, device aging and lifetime prediction techniques rely on the estimation of the meantime to failure (MTTF), a value that represents the expected lifespan of a device. MTTF predicts expected lifespan, but cannot adequately predict failures attributed to unusual circumstances or continuous overstress and premature degradation. This inability is due in large part to the fact that it considers the device safe operating area (SOA) or voltage and current ride-through capability to be independent of SOH. However, we experimentally proved that SOA of any semiconductor device goes down with the increased level of aging, and therefore, the probability of occurrence of over-voltage/current situation increases. As a result, the MTTF of the device as well as the overall converter reliability reduces with aging. That said, device degradation can be estimated by accomplishing an accurate online degradation monitoring tool that will determine the dynamic SOA. The correlation between aging and dynamic SOA gives us the useful remaining life of the device or the availability of a circuit. For this monitoring tool, spread spectrum time domain reflectometry (SSTDR) has been proposed and was successfully implemented in live power converters. In SSTDR, a high-frequency sine-modulated pseudo-noise sequence (SMPNS) is sent through the system, and reflections from age-related impedance discontinuities return to the test end where they are analyzed. In the past, SSTDR has been successfully used for device degradation detection in power converters while running at static conditions. However, the rapid variation in impedance throughout the entire live converter circuit caused by the fast-switching operation makes CM more challenging while using SSTDR. The algorithms and techniques developed in this project have overcome this challenge and demonstrated that the SSTDR test data are consistent with the aging of the power devices and do not affect the switching performance of the modulation process even the test signal is applied across the gate-source interface of the power MOSFET. This implies that the SSTDR technique can be integrated with the gate driver module, thereby creating a new platform for an intelligent gate-driver architecture (IGDA) that enables real-time health monitoring of power devices while performing features offered by a commercially available driver. Another application of SSTDR in power electronic systems is the ground fault prediction and detection technique for PV arrays. Protecting PV arrays from ground faults that lead to fire hazards and power loss is imperative to maintaining safe and effective solar power operations. Unlike many standard detection methods, SSTDR does not depend on fault current, therefore, can be implemented for testing ground faults at night or low illumination. However, wide variation in impedance throughout different materials and interconnections makes fault location more challenging than fault detection. This barrier was surmounted by the SSTDR-based fault detection algorithm developed in this project. The proposed algorithm was accounted for any variation in the number of strings, fault resistance, and the number of faults. In addition to its general utility for fault detection, the proposed algorithm can identify the location of multiple faults using only a single measurement point, thereby working as a preventative measure to protect the entire system at a reduced cost. Within the scope of the research work on SSTDR-based fault diagnosis and CM of power electronic components, a cell-level SOH measurement tool has been proposed that utilizes SSTDR to detect the location and aging of individual degraded cells in a large series-parallel connected Li-ion battery pack. This information of cell level SOH along with the respective cell location is critical to calculating the SOH of a battery pack and its remaining useful lifetime since the initial SOH of Li-ion cells varies under different manufacturing processes and operating conditions, causing them to perform inconsistently and thereby affect the performance of the entire battery pack in real-life applications. Unfortunately, today’s BMS considers the SOH of the entire battery pack/cell string as a single SOH and therefore, cannot monitor the SOH at the cell level. A healthy battery string has a specific impedance between the two terminals, and any aged cell in that string will change the impedance value. Since SSTDR can characterize the impedance change in its propagation path along with its location, it can successfully locate the degraded cell in a large battery pack and thereby, can prevent premature failure and catastrophic danger by performing scheduled maintenance.Introduction -- Background study and literature review -- Fundamentals of Spread Spectrum Time Domain Reflectometry (SSTDR): A new method for testing electronics live -- Accelerated aging test bench: design and implementation -- Condition monitoring of power switching in live power switching devices in live power electronic converters using SSTDR -- An irradiance-independent, robust ground-fault detection scheme for PV arrays based on SSTDR -- Detection of degraded/aged cell in a LI-Ion battery pack using SSTDR -- Dynamiv safe operating area (SOA) of power semiconductor devices -- Conclusion and future researc

Prognostics of Power Electronic Converters in renewable energy systems: an approach based on acoustic emission measurement and thermal modelling

Renewable energy conversion systems play an important role in delivering energy from natural resources. Power Electronic Converters (PECs) are vital for efficiently conditioning the generated energy to align with the requirements of the source. One of the obstacles in the wide adaptation of renewable energies is the lack of efficiency and reliability in these systems. In wind turbines, Electrical circuits, including the PEC, contribute to 24% of total failures experienced by the system. One of the key components in a PEC is the Insulated Gate Bipolar Transistor (IGBT) which is used as a switching device in PECs. They occur due to different factors such as operating conditions, environmental factors (temperature and humidity) and the internal structure of the IGBTs which are formed of layers of different material with different properties. This research focuses on exploring the relationship between the changes in temperature of the IGBT chip with acoustic emissions signals. The aim of this research project is the development of a more cost-effective method for condition monitoring and prognostics of PECs. In this thesis, a thorough literature review of current condition monitoring schemes is provided and the gap in research is identified. A great number of scholars and experts have experimented with the AE in PECs however the link between the increase in temperature of this chip and the fluctuations in AE signals is not yet established. Under certain loading conditions, the temperature of IGBT chip changed from the ambient temperature (20℃) to 55℃. The acoustic emissions were measured in 5℃ intervals and it was discovered that after the temperature surpasses the 40℃ mark, the AE signal amplitude drops to 0.1 percent of its value at 20℃. Moreover, the rising temperature creates new peaks in the frequency domain at frequencies between 400-600 kHz

Wide Bandgap Based Devices

Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits

Holistic Physics-of-Failure Approach to Wind Turbine Power Converter Reliability

As the cost of wind energy becomes of increasing importance to the global surge of clean and green energy sources, the reliability-critical power converter is a target for vast improvements in availability through dedicated research. To this end, this thesis concentrates on providing a new holistic approach to converter reliability research to facilitate reliability increasing, cost reducing innovations unique to the wind industry. This holistic approach combines both computational and physical experimentation to provide a test bench for detailed reliability analysis of the converter power modules under the unique operating conditions of the wind turbine. The computational models include a detailed permanent magnet synchronous generator wind turbine with a power loss and thermal model representing the machine side converter power module response to varying wind turbine conditions. The supporting experimental test rig consists of an inexpensive, precise and extremely fast temperature measurement approach using a PbSe photoconductive infra-red sensor unique in the wind turbine reliability literature. This is used to measure spot temperatures on a modified power module to determine the junction temperature swings experienced during current cycling. A number of key conclusions have been made from this holistic approach. -Physics-of-failure analysis (and indeed any wind turbine power converter based reliability analysis) requires realistic wind speed data as the temporal changes in wind speed have a significant impact on the thermal loading on the devices. -The use of drive train modelling showed that the current throughput of the power converter is decoupled from the incoming wind speed due to drive train dynamics and control. Therefore, the power converter loading cannot be directly derived from the wind speed input without this modelling. -The minimum wind speed data frequency required for sufficiently accurate temperature profiles was determined, and the use of SCADA data for physics-of failure reliability studies was subsequently shown to be entirely inadequate. -The experimental emulation of the power converter validated a number of the aspects of the simulation work including the increase in temperature with wind speed and the detectability of temperature variations due to the current's fundamental frequency. Most importantly, this holistic approach provides an ideal test bench for optimising power converter designs for wind turbine, or for other industries with stochastic loading, conditions whilst maintaining or exceeding present reliability levels to reduce wind turbine's cost of energy, and therefore, society

Manufacturing of Photovoltaic Devices, Power Electronics and Batteries for Local Direct Current Power Based Nanogrid

To meet the current and future demands of electrical power for household, industrial, commercial and transport sectors, the energy infrastructure has to undergo changes in terms of generation, distribution and consumption. Due to the shortcomings of nuclear and fossil fuel based power generation, the emergence of renewable energy has provided a very lucrative option. With the advent of low-cost photovoltaics (PV) panels and our ability to generate, store and use electrical energy locally without the need for long-range transmission, the world is about to witness transformational changes in electricity infrastructures. For local nano-grids, direct current (DC) -based system has several distinct advantages that are demonstrated through theoretical and experimental results. A PV- powered and local DC power based nano-grids can be more efficient, reliable, cyber secured, and can easily adopt internet of things (IoT) platforms. With DC generation, storage and consumption, significant amount of energy can be saved that are wasted in back and forth conversion between AC and DC. In case of geomagnetic disturbances, such nano-grids will be more resilient compared to centralized distribution network. Free-fuel, i.e. sunlight, based local DC nano-grid can be the sustainable and cost effective solution for underdeveloped, developing and developed economies. To take advantage of this, the manufacturing of PV, power electronics and batteries have to follow the best practices that aid process control, quality improvement and potential cost reduction. Without proper process control, the variation will result in yield loss, inferior performance and higher cost of production. On many instances, these issues were not considered, and some technology such as perovskite solar cell, received a lot of attention as a disruptive technology. Through detailed technical and economic assessments, it was shown that the variability and lack of rigorous process control will result in a lower efficiency when perovskite thin film solar cells are connected together to form a module. Due to stability and performance reasons, it was showed the perovskite solar cell is not ideal for 2-terminal or 4-terminal multi-junction/tandem configuration with silicon cells. Power electronics also play a vital role in PV systems. The challenges and design rules for silicon carbide (SiC) and gallium nitride (GaN) based power device manufacturing were analyzed. Based on it, advanced process control (APC) based single wafer processing (SWP) tools for manufacturing SiC and GaN power devices are proposed. For energy storage, batteries play an important role in PV installation. Li-ion technology will become the preferred storage due to its capabilities. Incorporation of advanced process control, rapid thermal processing, Industrial IoT, etc. can reduce variability, improve performance and reduce quality-check failures and bring down the cost of electrochemical batteries. The combined approaches in manufacturing of PV, power electronics and batteries will have a very positive impact in the growth of PV powered DC –based nano-grids