Nanoelectromechanical Sensors based on Suspended 2D Materials

The unique properties and atomic thickness of two-dimensional (2D) materials enable smaller and better nanoelectromechanical sensors with novel functionalities. During the last decade, many studies have successfully shown the feasibility of using suspended membranes of 2D materials in pressure sensors, microphones, accelerometers, and mass and gas sensors. In this review, we explain the different sensing concepts and give an overview of the relevant material properties, fabrication routes, and device operation principles. Finally, we discuss sensor readout and integration methods and provide comparisons against the state of the art to show both the challenges and promises of 2D material-based nanoelectromechanical sensing.Comment: Review pape

Active Matrix Flexible Sensory Systems: Materials, Design, Fabrication, and Integration

A variety of modern applications including soft robotics, prosthetics, and health monitoring devices that cover electronic skins (e-skins), wearables as well as implants have been developed within the last two decades to bridge the gap between artificial and biological systems. During this development, high-density integration of various sensing modalities into flexible electronic devices becomes vitally important to improve the perception and interaction of the human bodies and robotic appliances with external environment. As a key component in flexible electronics, the flexible thin-film transistors (TFTs) have seen significant advances, allowing for building flexible active matrices. The flexible active matrices have been integrated with distributed arrays of sensing elements, enabling the detection of signals over a large area. The integration of sensors within pixels of flexible active matrices has brought the application scenarios to a higher level of sophistication with many advanced functionalities. Herein, recent progress in the active matrix flexible sensory systems is reviewed. The materials used to construct the semiconductor channels, the dielectric layers, and the flexible substrates for the active matrices are summarized. The pixel designs and fabrication strategies for the active matrix flexible sensory systems are briefly discussed. The applications of the flexible sensory systems are exemplified by reviewing pressure sensors, temperature sensors, photodetectors, magnetic sensors, and biosignal sensors. At the end, the recent development is summarized and the vision on the further advances of flexible active matrix sensory systems is provided

Agenda: Second International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors (TFE3S)

University of Dayton’s Center of Excellence for Thin Film Research and Surface Engineering (CETRASE) is delighted to organize its second international workshop at the University of Dayton’s Research Institute (UDRI) campus in Dayton, Ohio, USA. The purpose of the new workshop is to exchange technical knowledge and boost technical and educational collaboration activities within the thin film research community through our CETRASE and the UDRI

Heterogeneous integration of graphene and Si CMOS for gas sensing applications

Detecting presence of gas molecules is of prominent importance for controlling chemical processes, safety systems, and industrial and medical applications. Despite enormous progress in this field over past few decades on developing and improving various types of gas sensors, sensors with higher sensitivity, selectivity, lower sensing limit, and lower cost that can perform at room temperature are highly sought-after. Discovery of graphene and its succeeding progress in nanotechnology has paved the way to design ultra-sensitive gas sensors that can detect individual gas molecules while operating at room temperature. Graphene is a promising candidate for gas sensing applications due to its unique transport properties, exceptionally high surface-to-volume ratio, and low electrical noise. In this dissertation, a graphene gas sensor fully integrated with silicon CMOS platform is presented, and its performance for detecting NO₂ and NH₃ gas molecules is investigated. This integration helps benefit the high gas sensitivity of graphene at room temperature as well as the compact size, robustness, low cost, and advantages of standard industrial scale production of CMOS technology. Recent progress in large scale growth of CVD graphene paves the path toward commercialization of graphene-based CMOS sensors to provide highly sensitive low-cost sensors for industrial applications. To best of our knowledge, this work is the first integration of mono-layer graphene and silicon CMOS. Also, this is the first implementation of graphene integrated gas sensor. Heterogeneous integration of monolayer graphene and silicon CMOS can introduce a platform to exploit the unique electronic properties of monolayer graphene for gas sensing applications and also take a step further toward commercialization of ultrasensitive monolithic graphene-based gas sensors. Furthermore, we were able to enhance sensitivity of CVD graphene to NH₃ by almost an order of magnitude. We experimentally showed that sensitivity of graphene to NH₃ can be enhanced by 7 folds compared to as-fabricated graphene by introducing NO₂ molecules as dopants. We observed this enhancement for graphene sensors microfabricated on SiO₂/Si substrate, as well as our integrated graphene-CMOS sensors. This finding not only increases current understanding on adsorption mechanisms of molecules to graphene, but also takes another step toward commercialization of graphene sensors.Electrical and Computer Engineerin

SOI RF-MEMS Based Variable Attenuator for Millimeter-Wave Applications

The most-attractive feature of microelectromechanical systems (MEMS) technology is that it enables the integration of a whole system on a single chip, leading to positive effects on the performance, reliability and cost. MEMS has made it possible to design IC-compatible radio frequency (RF) devices for wireless and satellite communication systems. Recently, with the advent of 5G, there is a huge market pull towards millimeter-wave devices. Variable attenuators are widely employed for adjusting signal levels in high frequency equipment. RF circuits such as automatic gain control amplifiers, broadband vector modulators, full duplex wireless systems, and radar systems are some of the primary applications of variable attenuators. This thesis describes the development of a millimeter-wave RF MEMS-based variable attenuator implemented by monolithically integrating Coplanar Waveguide (CPW) based hybrid couplers with lateral MEMS varactors on a Silicon–on–Insulator (SOI) substrate. The MEMS varactor features a Chevron type electrothermal actuator that controls the lateral movement of a thick plate, allowing precise change in the capacitive loading on a CPW line leading to a change in isolation between input and output. Electrothermal actuators have been employed in the design instead of electrostatic ones because they can generate relatively larger in-line deflection and force within a small footprint. They also provide the advantage of easy integration with other electrical micro-systems on the same chip, since their fabrication process is compatible with general IC fabrication processes. The development of an efficient and reliable actuator has played an important role in the performance of the proposed design of MEMS variable attenuator. A Thermoreflectance (TR) imaging system is used to acquire the surface temperature profiles of the electrothermal actuator employed in the design, so as to study the temperature distribution, displacement and failure analysis of the Chevron actuator. The 60 GHz variable attenuator was developed using a custom fabrication process on an SOI substrate with a device footprint of 3.8 mm x 3.1 mm. The fabrication process has a high yield due to the high-aspect-ratio single-crystal-silicon structures, which are free from warping, pre-deformation and sticking during the wet etching process. The SOI wafer used has a high resistivity (HR) silicon (Si) handle layer that provides an excellent substrate material for RF communication devices at microwave and millimeter wave frequencies. This low-cost fabrication process provides the flexibility to extend this module and implement more complex RF signal conditioning functions. It is thus an appealing candidate for realizing a wide range of reconfigurable RF devices. The measured RF performance of the 60 GHz variable attenuator shows that the device exhibits attenuation levels (|S21|) ranging from 10 dB to 25 dB over a bandwidth of 4 GHz and a return loss of better than 20 dB. The thesis also presents the design and implementation of a MEMS-based impedance tuner on a Silicon-On-Insulator (SOI) substrate. The tuner is comprised of four varactors monolithically integrated with CPW lines. Chevron actuators control the lateral motion of capacitive thick plates used as contactless lateral MEMS varactors, achieving a capacitance range of 0.19 pF to 0.8 pF. The improvement of the Smith chart coverage is achieved by proper choice of the electrical lengths of the CPW lines and precise control of the lateral motion of the capacitive plates. The measured results demonstrate good impedance matching coverage, with an insertion loss of 2.9 dB. The devices presented in this thesis provide repeatable and reliable operation due to their robust, thick-silicon structures. Therefore, they exhibit relatively low residual stress and are free from stiction and micro-welding problems

Surface plasmons for enhanced metal-semiconductor-metal photodetectors

Surface Plasmon Polaritons (SPPs) are quantized charge density oscillations that occur when a photon couples to the free electron gas of the metal at the interface between a metal and a dielectric. The extraordinary properties of SPP allow for sub-diffraction limit waveguiding and localized field enhancement. The emerging field of surface plasmonics has applied SPP coupling to a number of new and interesting applications, such as: Surface Enhanced Raman Spectroscopy (SERS), super lenses, nano-scale optical circuits, optical filters and SPP enhanced photodetectors. In the past decade, there have been several experimental and theoretical research and development activities which reported on the extraordinary optical transmission through subwavelength metallic apertures as well as through periodic metal grating structures. The use of SPP for light absorption enhancement using sub-wavelength metal gratings promises an increased enhancement in light collection efficiency of photovoltaic devices. A subwavelength plasmonic nanostructure grating interacts strongly with the incident light and potentially traps it inside the subsurface region of semiconductor substrates. Among all photodetectors, the Metal-Semiconductor-Metal photodetector (MSM-PD) is the simplest structure. Moreover, due to the lateral geometry of the MSM-PDs, the capacitance of an MSM-PD is much lower than capacitances of p-i-n PDs and Avalanche PDs, making its response time in the range of a few tens of picoseconds for nano-scale spacing between the electrode fingers. These features of simple fabrication and high speed make MSM-PDs attractive and essential devices for high-speed optical interconnects, highsensitivity optical samplers and ultra-wide bandwidth optoelectronic integrated circuits (OEIC) receivers for fibre optic communication systems. However, while MSM-PDs offer faster response than their p-i-n PD and avalanche PD counterparts, their most significant drawbacks are the high reflectivity of the metal fingers and the very-low light transmission through the spacing between the fingers, leading to very low photodetector sensitivity. This thesis proposes, designs and demonstrates the concept of a novel plasmonicbased MSM-PD employing metal nano-gratings and sub-wavelength slits. Various metal nano-gratings are designed on top of the gold fingers of an MSM-PD based on gallium arsenide (GaAs) for an operating wavelength of 830 nm to create SPP-enhanced MSM-PDs. Both the geometry and light absorption near the designed wavelength are theoretically and experimentally investigated. Finite Difference Time Domain (FDTD) simulation is used to simulate and design plasmonic MSM-PDs devices for maximal field enhancement. The simulation results show more than 10 times enhancement for the plasmonic nano-grating MSM-PD compared with the device without the metal nano-gratings, for 100 nm slit difference, due to the improved optical signal propagation through the nano-gratings. A dual beam FIB/ SEM is employed for the fabrication of metal nano-gratings and the sub-wavelength slit of the MSM-PD. Experimentally, we demonstrate the principle of plasmonics-based MSM-PDs and attain a measured photodetector responsivity that is 4 times better than that of conventional single-slit MSM-PDs. We observe reduction in the responsivity as the bias voltage increases and the input light polarization varies. Our experimental results demonstrate the feasibility of developing high-responsivity, low bias-voltage high-speed MSM-PDs. A novel multi-finger plasmonics-based GaAs MSM-PD structure is optimized geometrically using the 2-D FDTD method and developed, leading to more than 7 times enhancement in photocurrent in comparison with the conventional MSM-PD of similar dimensions at a bias voltage as low as 0.3V. This enhancement is attributed to the coupling of SPPs with the incident light through the nano-structured metal fingers. Moreover, the plasmonic-based MSM-PD shows high sensitivity to the incident light polarization states. Combining the polarization sensitivity and the wavelength selective guiding nature of the nano-gratings, the plasmonic MSM-PD can be used to design high-sensitivity polarization diversity receivers, integrating polarization splitters and polarization CMOS imaging sensors. We also propose and demonstrate a plasmonic-based GaAs balanced metalsemiconductor- metal photodetector (B-MSM-PD) structure and we measure a common mode rejection ratio (CMRR) value less than 25 dB at 830nm wavelength. This efficient CMRR value makes our B-MSM-PD structure suitable for ultra-high-speed optical telecommunication systems. In addition, this work paves the way for the monolithic integration of B-MSM-PDs into large scale semiconductor circuits. This thesis demonstrates several new opportunities for resonant plasmonic nanostructures able to enhance the responsivity of the MSM-PD. The presented concepts and insights hold great promise for new applications in integrated optics, photovoltaics, solidstate lighting and imaging below the diffraction limit. In Chapter 10 we conclude this thesis by summarizing and discussing some possible applications and future research directions based on SPP field concentration

Annual Report 2019 - Institute of Ion Beam Physics and Materials Research

The Institute of Ion Beam Physics and Materials Research conducts materials research for future applications in, e.g., information technology. To this end, we make use of the various possibilities offered by our Ion Beam Center (IBC) for synthesis, modification, and analysis of thin films and nanostructures, as well as of the free-electron laser FELBE at HZDR for THz spectroscopy. The analyzed materials range from semiconductors and oxides to metals and magnetic materials. They are investigated with the goal to optimize their electronic, magnetic, optical as well as structural functionality. This research is embedded in the Helmholtz Association’s programme “From Matter to Materials and Life”. Seven publications from last year are highlighted in this Annual Report to illustrate the wide scientific spectrum of our institute. After the scientific evaluation in the framework of the Helmholtz Programme-Oriented Funding (POF) in 2018 we had some time to concentrate on science again before end of the year a few of us again had to prepare for the strategic evaluation which took place in January 2020, which finally was also successful for the Institute

Feasibility of Geiger-mode avalanche photodiodes in CMOS standard technologies for tracker detectors

The next generation of particle colliders will be characterized by linear lepton colliders, where the collisions between electrons and positrons will allow to study in great detail the new particle discovered at CERN in 2012 (presumably the Higgs boson). At present time, there are two alternative projects underway, namely the ILC (International Linear Collider) and CLIC (Compact LInear Collider). From the detector point of view, the physics aims at these particle colliders impose such extreme requirements, that there is no sensor technology available in the market that can fulfill all of them. As a result, several new detector systems are being developed in parallel with the accelerator. This thesis presents the development of a GAPD (Geiger-mode Avalanche PhotoDiode) pixel detector aimed mostly at particle tracking at future linear colliders. GAPDs offer outstanding qualities to meet the challenging requirements of ILC and CLIC, such as an extraordinary high sensitivity, virtually infinite gain and ultra-fast response time, apart from compatibility with standard CMOS technologies. In particular, GAPD detectors enable the direct conversion of a single particle event onto a CMOS digital pulse in the sub-nanosecond time scale without the utilization of either preamplifiers or pulse shapers. As a result, GAPDs can be read out after each single bunch crossing, a unique quality that none of its competitors can offer at the moment. In spite of all these advantages, GAPD detectors suffer from two main problems. On the one side, there exist noise phenomena inherent to the sensor, which induce noise pulses that cannot be distinguished from real particle events and also worsen the detector occupancy to unacceptable levels. On the other side, the fill-factor is too low and gives rise to a reduced detection efficiency. Solutions to the two problems commented that are compliant with the severe specifications of the next generation of particle colliders have been thoroughly investigated. The design and characterization of several single pixels and small arrays that incorporate some elements to reduce the intrinsic noise generated by the sensor are presented. The sensors and the readout circuits have been monolithically integrated in a conventional HV-CMOS 0.35 μm process. Concerning the readout circuits, both voltage-mode and current-mode options have been considered. Moreover, the time-gated operation has also been explored as an alternative to reduce the detected sensor noise. The design and thorough characterization of a prototype GAPD array, also monolithically integrated in a conventional 0.35 μm HV-CMOS process, is presented in the thesis as well. The detector consists of 10 rows x 43 columns of pixels, with a total sensitive area of 1 mm x 1 mm. The array is operated in a time-gated mode and read out sequentially by rows. The efficiency of the proposed technique to reduce the detected noise is shown with a wide variety of measurements. Further improved results are obtained with the reduction of the working temperature. Finally, the suitability of the proposed detector array for particle detection is shown with the results of a beam-test campaign conducted at CERN-SPS (European Organization for Nuclear Research-Super Proton Synchrotron). Apart from that, a series of additional approaches to improve the performance of the GAPD technology are proposed. The benefits of integrating a GAPD pixel array in a 3D process in terms of overcoming the fill-factor limitation are examined first. The design of a GAPD detector in the Global Foundries 130 nm/Tezzaron 3D process is also presented. Moreover, the possibility to obtain better results in light detection applications by means of the time-gated operation or correction techniques is analyzed too.Aquesta tesi presenta el desenvolupament d’un detector de píxels de GAPDs (Geiger-mode Avalanche PhotoDiodes) dedicat principalment a rastrejar partícules en futurs col•lisionadors lineals. Els GAPDs ofereixen unes qualitats extraordinàries per satisfer els requisits extremadament exigents d’ILC (International Linear Collider) i CLIC (Compact LInear Collider), els dos projectes per la propera generació de col•lisionadors que s’han proposat fins a dia d’avui. Entre aquestes qualitats es troben una sensibilitat extremadament elevada, un guany virtualment infinit i una resposta molt ràpida, a part de ser compatibles amb les tecnologies CMOS estàndard. En concret, els detectors de GAPDs fan possible la conversió directa d’un esdeveniment generat per una sola partícula en un senyal CMOS digital amb un temps inferior al nanosegon. Com a resultat d’aquest fet, els GAPDs poden ser llegits després de cada bunch crossing (la col•lisió de les partícules), una qualitat única que cap dels seus competidors pot oferir en el moment actual. Malgrat tots aquests avantatges, els detectors de GAPDs pateixen dos grans problemes. D’una banda, existeixen fenòmens de soroll inherents al sensor, els quals indueixen polsos de soroll que no poden ser distingits dels esdeveniments reals generats per partícules i que a més empitjoren l’ocupació del detector a nivells inacceptables. D’altra banda, el fill-factor (és a dir, l’àrea sensible respecte l’àrea total) és molt baix i redueix l’eficiència detectora. En aquesta tesi s’han investigat solucions als dos problemes comentats i que a més compleixen amb les especificacions altament severes dels futurs col•lisionadors lineals. El detector de píxels de GAPDs, el qual ha estat monolíticament integrat en un procés HV-CMOS estàndard de 0.35 μm, incorpora circuits de lectura en mode voltatge que permeten operar el sensor en l’anomenat mode time-gated per tal de reduir el soroll detectat. L’eficiència de la tècnica proposada queda demostrada amb la gran varietat d’experiments que s’han dut a terme. Els resultats del beam-test dut a terme al CERN indiquen la capacitat del detector de píxels de GAPDs per detectar partícules altament energètiques. A banda d’això, també s’han estudiat els beneficis d’integrar un detector de píxels de GAPDs en un procés 3D per tal d’incrementar el fill-factor. L’anàlisi realitzat conclou que es poden assolir fill-factors superiors al 90%

Gallium Nitride Integrated Microsystems for Radio Frequency Applications.

The focus of this work is design, fabrication, and characterization of novel and advanced electro-acoustic devices and integrated micro/nano systems based on Gallium Nitride (GaN). Looking beyond silicon (Si), compound semiconductors, such as GaN have significantly improved the performance of the existing electronic devices, as well as enabled completely novel micro/nano systems. GaN is of particular interest in the “More than Moore” era because it combines the advantages of a wide-band gap semiconductor with strong piezoelectric properties. Popular in optoelectronics, high-power and high-frequency applications, the added piezoelectric feature, extends the research horizons of GaN to diverse scientific and multi-disciplinary fields. In this work, we have incorporated GaN micro-electro-mechanical systems (MEMS) and acoustic resonators to the GaN baseline process and used high electron mobility transistors (HEMTs) to actuate, sense and amplify the acoustic waves based on depletion, piezoelectric, thermal and piezo-resistive mechanisms and achieved resonance frequencies ranging from 100s of MHz up to 10 GHz with frequency×quality factor (f×Q) values as high as 1013. Such high-performance integrated systems can be utilized in radio frequency (RF) and microwave communication and extreme-environment applications.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/135799/1/azadans_1.pd

Novel materials for silicon based photonics

Thesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2018.This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.Cataloged from student-submitted PDF version of thesis.Includes bibliographical references.A complete photonic chip must include the following components: a light source, usually lasers, an isolator, a waveguide, a modulator and a photodetector. Limited by material intrinsic properties, silicon alone cannot realize all the above mentioned functions. The development of silicon photonics has found its way through exploiting novel materials as hybrid platforms to manufacture various devices and systems. In this thesis, we focus on the development of novel material in emerging needs of broadband coherent light source and optical isolators. Chalcogenide glass stands out among the candidates for light generation and sensing due to its large non-linear figure of merit and wide transparency window in the IR spectral range, while magnetic garnet still presents the best device performance among magneto-optical isolators owing to the ease of phase formation and relatively low material absorption. We first investigated the fabrication technology of chalcogenide glass and developed a process flow to produce low loss planar chalcogenide glass waveguides. Using electron beam lithography to minimize sidewall roughness and reactive ion etch to achieve vertical sidewalls. We managed to demonstrate a record low loss of 0.5 dB/cm in single mode core chalcogenide waveguides. Based on this low loss platform, we integrated a supercontinuum light source onto a sensor chip. Our work presented a step forward towards miniaturization photonic sensor chips. Next, we focused on a hybrid platform of chalcogenide glass and magnetic garnet. By carefully designing device architecture, a monolithically integrated TM polarized magneto-optical (MO) isolator with 3 dB insertion loss and 40 dB isolation ratio was demonstrated. Both parameter sets record among current monolithically integrated on-chip MO isolators. Meanwhile, we also demonstrated a monolithically integrated MO isolator with TE polarization featuring 11.5 dB insertion loss and 20 dB isolation ratio. Lastly, we leveraged cavity enhanced spectroscopy platform to study radiation induced effect on SiNx, a-Si and SiC materials. We found a refractive index modulation to the order of 10⁻³ after receiving 10 Mrad Gamma radiation dose.by Qingyang Du.Ph. D