Improvement Energy Efficiency for a Hybrid Multibank Memory in Energy Critical Applications

High performance, low power multiprocessor/multibank memory system requires a compiler that provides efficient data partitioning and mapping procedures. This paper introduced two compiler techniques for the data mapping to multibank memory, since data mapping is still an open problem and needs a better solution. The multibank memory can be consisted of volatile and non-volatile memory components to support ultra-low powered wearable devices. This hybrid memory system including volatile and non-volatile memory components yields higher complexity to map data onto it. To efficiently solve this mapping problem, we formulate it to a simple decision problem. Based on the problem definition, we proposed two efficient algorithms to determine the placement of data to the multibank memory. The proposed techniques consider the characteristic of the non-volatile memory that its write operation consumes more energy than the same operation of a volatile memory even though it provides ultra-low operation power and nearly zero leakage current. The proposed technique solves this negative effect of non-volatile memory by using efficient data placement technique and hybrid memory architecture. In experimental section, the result shows that the proposed techniques improve energy saving up to 59.5% for the hybrid multibank memory architecture

Gestión de jerarquías de memoria híbridas a nivel de sistema

Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadoras y Automática y de Ku Leuven, Arenberg Doctoral School, Faculty of Engineering Science, leída el 11/05/2017.In electronics and computer science, the term ‘memory’ generally refers to devices that are used to store information that we use in various appliances ranging from our PCs to all hand-held devices, smart appliances etc. Primary/main memory is used for storage systems that function at a high speed (i.e. RAM). The primary memory is often associated with addressable semiconductor memory, i.e. integrated circuits consisting of silicon-based transistors, used for example as primary memory but also other purposes in computers and other digital electronic devices. The secondary/auxiliary memory, in comparison provides program and data storage that is slower to access but offers larger capacity. Examples include external hard drives, portable flash drives, CDs, and DVDs. These devices and media must be either plugged in or inserted into a computer in order to be accessed by the system. Since secondary storage technology is not always connected to the computer, it is commonly used for backing up data. The term storage is often used to describe secondary memory. Secondary memory stores a large amount of data at lesser cost per byte than primary memory; this makes secondary storage about two orders of magnitude less expensive than primary storage. There are two main types of semiconductor memory: volatile and nonvolatile. Examples of non-volatile memory are ‘Flash’ memory (sometimes used as secondary, sometimes primary computer memory) and ROM/PROM/EPROM/EEPROM memory (used for firmware such as boot programs). Examples of volatile memory are primary memory (typically dynamic RAM, DRAM), and fast CPU cache memory (typically static RAM, SRAM, which is fast but energy-consuming and offer lower memory capacity per are a unit than DRAM). Non-volatile memory technologies in Si-based electronics date back to the 1990s. Flash memory is widely used in consumer electronic products such as cellphones and music players and NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. The rapid increase of leakage currents in Silicon CMOS transistors with scaling poses a big challenge for the integration of SRAM memories. There is also the case of susceptibility to read/write failure with low power schemes. As a result of this, over the past decade, there has been an extensive pooling of time, resources and effort towards developing emerging memory technologies like Resistive RAM (ReRAM/RRAM), STT-MRAM, Domain Wall Memory and Phase Change Memory(PRAM). Emerging non-volatile memory technologies promise new memories to store more data at less cost than the expensive-to build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. These new memory technologies combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the non-volatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. The research and information on these Non-Volatile Memory (NVM) technologies has matured over the last decade. These NVMs are now being explored thoroughly nowadays as viable replacements for conventional SRAM based memories even for the higher levels of the memory hierarchy. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional(3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years...En el campo de la informática, el término ‘memoria’ se refiere generalmente a dispositivos que son usados para almacenar información que posteriormente será usada en diversos dispositivos, desde computadoras personales (PC), móviles, dispositivos inteligentes, etc. La memoria principal del sistema se utiliza para almacenar los datos e instrucciones de los procesos que se encuentre en ejecución, por lo que se requiere que funcionen a alta velocidad (por ejemplo, DRAM). La memoria principal está implementada habitualmente mediante memorias semiconductoras direccionables, siendo DRAM y SRAM los principales exponentes. Por otro lado, la memoria auxiliar o secundaria proporciona almacenaje(para ficheros, por ejemplo); es más lenta pero ofrece una mayor capacidad. Ejemplos típicos de memoria secundaria son discos duros, memorias flash portables, CDs y DVDs. Debido a que estos dispositivos no necesitan estar conectados a la computadora de forma permanente, son muy utilizados para almacenar copias de seguridad. La memoria secundaria almacena una gran cantidad de datos aun coste menor por bit que la memoria principal, siendo habitualmente dos órdenes de magnitud más barata que la memoria primaria. Existen dos tipos de memorias de tipo semiconductor: volátiles y no volátiles. Ejemplos de memorias no volátiles son las memorias Flash (algunas veces usadas como memoria secundaria y otras veces como memoria principal) y memorias ROM/PROM/EPROM/EEPROM (usadas para firmware como programas de arranque). Ejemplos de memoria volátil son las memorias DRAM (RAM dinámica), actualmente la opción predominante a la hora de implementar la memoria principal, y las memorias SRAM (RAM estática) más rápida y costosa, utilizada para los diferentes niveles de cache. Las tecnologías de memorias no volátiles basadas en electrónica de silicio se remontan a la década de1990. Una variante de memoria de almacenaje por carga denominada como memoria Flash es mundialmente usada en productos electrónicos de consumo como telefonía móvil y reproductores de música mientras NAND Flash solid state disks(SSDs) están progresivamente desplazando a los dispositivos de disco duro como principal unidad de almacenamiento en computadoras portátiles, de escritorio e incluso en centros de datos. En la actualidad, hay varios factores que amenazan la actual predominancia de memorias semiconductoras basadas en cargas (capacitivas). Por un lado, se está alcanzando el límite de integración de las memorias Flash, lo que compromete su escalado en el medio plazo. Por otra parte, el fuerte incremento de las corrientes de fuga de los transistores de silicio CMOS actuales, supone un enorme desafío para la integración de memorias SRAM. Asimismo, estas memorias son cada vez más susceptibles a fallos de lectura/escritura en diseños de bajo consumo. Como resultado de estos problemas, que se agravan con cada nueva generación tecnológica, en los últimos años se han intensificado los esfuerzos para desarrollar nuevas tecnologías que reemplacen o al menos complementen a las actuales. Los transistores de efecto campo eléctrico ferroso (FeFET en sus siglas en inglés) se consideran una de las alternativas más prometedores para sustituir tanto a Flash (por su mayor densidad) como a DRAM (por su mayor velocidad), pero aún está en una fase muy inicial de su desarrollo. Hay otras tecnologías algo más maduras, en el ámbito de las memorias RAM resistivas, entre las que cabe destacar ReRAM (o RRAM), STT-RAM, Domain Wall Memory y Phase Change Memory (PRAM)...Depto. de Arquitectura de Computadores y AutomáticaFac. de InformáticaTRUEunpu

Volatile STT-RAM Scratchpad Design and Data Allocation for Low Energy

[Abstract] On-chip power consumption is one of the fundamental challenges of current technology scaling. Cache memories consume a sizable part of this power, particularly due to leakage energy. STT-RAM is one of several new memory technologies that have been proposed in order to improve power while preserving performance. It features high density and low leakage, but at the expense of write energy and performance. This article explores the use of STT-RAM--based scratchpad memories that trade nonvolatility in exchange for faster and less energetically expensive accesses, making them feasible for on-chip implementation in embedded systems. A novel multiretention scratchpad partitioning is proposed, featuring multiple storage spaces with different retention, energy, and performance characteristics. A customized compiler-based allocation algorithm suitable for use with such a scratchpad organization is described. Our experiments indicate that a multiretention STT-RAM scratchpad can provide energy savings of 53% with respect to an iso-area, hardware-managed SRAM cache

Design and Code Optimization for Systems with Next-generation Racetrack Memories

With the rise of computationally expensive application domains such as machine learning, genomics, and fluids simulation, the quest for performance and energy-efficient computing has gained unprecedented momentum. The significant increase in computing and memory devices in modern systems has resulted in an unsustainable surge in energy consumption, a substantial portion of which is attributed to the memory system. The scaling of conventional memory technologies and their suitability for the next-generation system is also questionable. This has led to the emergence and rise of nonvolatile memory ( NVM ) technologies. Today, in different development stages, several NVM technologies are competing for their rapid access to the market. Racetrack memory ( RTM ) is one such nonvolatile memory technology that promises SRAM -comparable latency, reduced energy consumption, and unprecedented density compared to other technologies. However, racetrack memory ( RTM ) is sequential in nature, i.e., data in an RTM cell needs to be shifted to an access port before it can be accessed. These shift operations incur performance and energy penalties. An ideal RTM , requiring at most one shift per access, can easily outperform SRAM . However, in the worst-cast shifting scenario, RTM can be an order of magnitude slower than SRAM . This thesis presents an overview of the RTM device physics, its evolution, strengths and challenges, and its application in the memory subsystem. We develop tools that allow the programmability and modeling of RTM -based systems. For shifts minimization, we propose a set of techniques including optimal, near-optimal, and evolutionary algorithms for efficient scalar and instruction placement in RTMs . For array accesses, we explore schedule and layout transformations that eliminate the longer overhead shifts in RTMs . We present an automatic compilation framework that analyzes static control flow programs and transforms the loop traversal order and memory layout to maximize accesses to consecutive RTM locations and minimize shifts. We develop a simulation framework called RTSim that models various RTM parameters and enables accurate architectural level simulation. Finally, to demonstrate the RTM potential in non-Von-Neumann in-memory computing paradigms, we exploit its device attributes to implement logic and arithmetic operations. As a concrete use-case, we implement an entire hyperdimensional computing framework in RTM to accelerate the language recognition problem. Our evaluation shows considerable performance and energy improvements compared to conventional Von-Neumann models and state-of-the-art accelerators

Novel online data allocation for hybrid memories on tele-health systems

[EN] The developments of wearable devices such as Body Sensor Networks (BSNs) have greatly improved the capability of tele-health industry. Large amount of data will be collected from every local BSN in real-time. These data is processed by embedded systems including smart phones and tablets. After that, the data will be transferred to distributed storage systems for further processing. Traditional on-chip SRAMs cause critical power leakage issues and occupy relatively large chip areas. Therefore, hybrid memories, which combine volatile memories with non-volatile memories, are widely adopted in reducing the latency and energy cost on multi-core systems. However, most of the current works are about static data allocation for hybrid memories. Those mechanisms cannot achieve better data placement in real-time. Hence, we propose online data allocation for hybrid memories on embedded tele-health systems. In this paper, we present dynamic programming and heuristic approaches. Considering the difference between profiled data access and actual data access, the proposed algorithms use a feedback mechanism to improve the accuracy of data allocation during runtime. Experimental results demonstrate that, compared to greedy approaches, the proposed algorithms achieve 20%-40% performance improvement based on different benchmarks. (C) 2016 Elsevier B.V. All rights reserved.This work is supported by NSF CNS-1457506 and NSF CNS-1359557.Chen, L.; Qiu, M.; Dai, W.; Hassan Mohamed, H. (2017). Novel online data allocation for hybrid memories on tele-health systems. Microprocessors and Microsystems. 52:391-400. https://doi.org/10.1016/j.micpro.2016.08.003S3914005

Power-Efficient and Low-Latency Memory Access for CMP Systems with Heterogeneous Scratchpad On-Chip Memory

The gradually widening speed disparity of between CPU and memory has become an overwhelming bottleneck for the development of Chip Multiprocessor (CMP) systems. In addition, increasing penalties caused by frequent on-chip memory accesses have raised critical challenges in delivering high memory access performance with tight power and latency budgets. To overcome the daunting memory wall and energy wall issues, this thesis focuses on proposing a new heterogeneous scratchpad memory architecture which is configured from SRAM, MRAM, and Z-RAM. Based on this architecture, we propose two algorithms, a dynamic programming and a genetic algorithm, to perform data allocation to different memory units, therefore reducing memory access cost in terms of power consumption and latency. Extensive and intensive experiments are performed to show the merits of the heterogeneous scratchpad architecture over the traditional pure memory system and the effectiveness of the proposed algorithms

MEMORY OPTIMIZATIONS FOR HIGH-THROUGHPUT COMPUTER SYSTEMS

The emergence of new non-volatile memory (NVM) technology and deep neural network (DNN) inferences bring challenges related to off-chip memory access. Ensuring crash consistency leads to additional memory operations and exposes memory update operations on the critical execution path. DNN inference execution on some accelerators suffers from intensive off-chip memory access. The focus of this dissertation is to tackle the issues related to off-chip memory in these high performance computing systems. The logging operations, required by the crash consistency, impose a significant performance overhead due to the extra memory access. To mitigate the persistence time of log requests, we introduce a load-aware log entry allocation scheme that allocates log requests to the address whose bank has the lightest workload. To address the problem of intra-record ordering, we propose to buffer log metadata in a non-volatile ADR buffer until the corresponding log can be removed. Moreover, the recently proposed LAD introduced unnecessary logging operations on multicore CPU. To reduce these unnecessary operations, we have devised two-stage transaction execution and virtual ADR buffers. To tackle the challenge of low response time and high computational intensity associated with DNN inferences, these computations are often executed on customized accelerators. However, data loading from off-chip memory typically takes longer than computing, thereby reducing performance in some scenarios, especially on edge devices. To address this issue, we propose an optimization of the widely adopted Weight Stationary dataflow to remove redundant accesses to IFMAP in off-chip memory by reordering the loops in the standard convolution operation. Furthermore, to enhance the off-chip memory throughput, we introduce the load-aware placement for data tiles on off-chip memory that reduces intra/inter contentions caused by concurrent accesses from multiple tiles and improves the off-chip memory device parallelism during access

Energy Saving Techniques for Phase Change Memory (PCM)

In recent years, the energy consumption of computing systems has increased and a large fraction of this energy is consumed in main memory. Towards this, researchers have proposed use of non-volatile memory, such as phase change memory (PCM), which has low read latency and power; and nearly zero leakage power. However, the write latency and power of PCM are very high and this, along with limited write endurance of PCM present significant challenges in enabling wide-spread adoption of PCM. To address this, several architecture-level techniques have been proposed. In this report, we review several techniques to manage power consumption of PCM. We also classify these techniques based on their characteristics to provide insights into them. The aim of this work is encourage researchers to propose even better techniques for improving energy efficiency of PCM based main memory.Comment: Survey, phase change RAM (PCRAM

Shiftsreduce: Minimizing shifts in racetrack memory 4.0

Racetrack memories (RMs) have significantly evolved since their conception in 2008, making them a serious contender in the field of emerging memory technologies. Despite key technological advancements, the access latency and energy consumption of an RM-based system are still highly influenced by the number of shift operations. These operations are required to move bits to the right positions in the racetracks. This article presents data-placement techniques for RMs that maximize the likelihood that consecutive references access nearby memory locations at runtime, thereby minimizing the number of shifts. We present an integer linear programming (ILP) formulation for optimal data placement in RMs, and we revisit existing offset assignment heuristics, originally proposed for random-access memories. We introduce a novel heuristic tailored to a realistic RM and combine it with a genetic search to further improve the solution. We show a reduction in the number of shifts of up to 52.5%, outperforming the state of the art by up to 16.1%