Experimental review of graphene

This review examines the properties of graphene from an experimental perspective. The intent is to review the most important experimental results at a level of detail appropriate for new graduate students who are interested in a general overview of the fascinating properties of graphene. While some introductory theoretical concepts are provided, including a discussion of the electronic band structure and phonon dispersion, the main emphasis is on describing relevant experiments and important results as well as some of the novel applications of graphene. In particular, this review covers graphene synthesis and characterization, field-effect behavior, electronic transport properties, magneto-transport, integer and fractional quantum Hall effects, mechanical properties, transistors, optoelectronics, graphene-based sensors, and biosensors. This approach attempts to highlight both the means by which the current understanding of graphene has come about and some tools for future contributions.Comment: Equal contributions from all author

Nano-electro-mechanical systems fabricated by tip-based nanofabrication

This dissertation explores the use of a heated AFM tip for fabrication of NEMS devices. Two critical challenges hindering TBN from NEMS fabrication are addressed in this thesis. First, we experimentally found out that polystyrene nanopatterns deposited by a heated AFM tip can serve directly as etch mask and transfer the nanopatterns to solid-state materials such as silicon and silicon oxide through one step of etching, solving the first challenge for NEMS device fabrication using TBN; second, we developed a process that makes this TBN method seamlessly compatible with conventional nanofabrication processes. Polystyrene nanopatterns deposited can serve together with optical lithography patterned mask and transfer both micropatterns defined by optical lithography and nanopatterns defined by the heated AFM tip to silicon. After solving the two critical challenges, we demonstrated various types of silicon NEMS mechanical resonators such as single-clamped, double-clamped, wavy-shaped, spider-like and spiral-shaped using this TBN method with a heated AFM tip. Laser interferometer measurement on two NEMS resonators showed resonance frequencies of 1.2MHz and 2.2 MHz, close to the simulated resonance frequencies. Moreover, we demonstrated PDMS nanofluidic channels with arbitrary shapes using this TBN method with a heated AFM tip. Both ion conductance measurement and fluorescence measurement confirmed the functionality of the TBN-fabrication nanofluidic channels. Finally, we demonstrated a MESFET transistor using this TBN method with a heated AFM tip. MESFET devices with one, two, four and eight fins were fabricated, demonstrating the capability of this TBN method. I-V measurements proved the functionality of the transistor. This thesis work demonstrated that TBN with a heated AFM tip held great potential in nanodevice fabrication due to its simplicity, robustness, flexibility and compatibility with existing device nanofabrication process. For example, the whole TBN process takes place in ambient conditions and is very simple. And this TBN method is additive so that the heated AFM tip only deposits polymer where needed, thus only resulting in minimal contamination. Future work should improve the throughput and scalability to make this TBN method commercially available for NEMS fabrication

Gallium Nitride Integrated Microsystems for Radio Frequency Applications.

The focus of this work is design, fabrication, and characterization of novel and advanced electro-acoustic devices and integrated micro/nano systems based on Gallium Nitride (GaN). Looking beyond silicon (Si), compound semiconductors, such as GaN have significantly improved the performance of the existing electronic devices, as well as enabled completely novel micro/nano systems. GaN is of particular interest in the “More than Moore” era because it combines the advantages of a wide-band gap semiconductor with strong piezoelectric properties. Popular in optoelectronics, high-power and high-frequency applications, the added piezoelectric feature, extends the research horizons of GaN to diverse scientific and multi-disciplinary fields. In this work, we have incorporated GaN micro-electro-mechanical systems (MEMS) and acoustic resonators to the GaN baseline process and used high electron mobility transistors (HEMTs) to actuate, sense and amplify the acoustic waves based on depletion, piezoelectric, thermal and piezo-resistive mechanisms and achieved resonance frequencies ranging from 100s of MHz up to 10 GHz with frequency×quality factor (f×Q) values as high as 1013. Such high-performance integrated systems can be utilized in radio frequency (RF) and microwave communication and extreme-environment applications.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/135799/1/azadans_1.pd

Novel Materials and Devices for Terahertz Detection and Emission for Sensing, Imaging and Communication

Technical advancement is required to attain a high data transmission rate, which entails expanding beyond the currently available bandwidth and establishing a new standard for the highest data rates, which mandates a higher frequency range and larger bandwidth. The THz spectrum (0.1-10 THz) has been considered as an emerging next frontier for the future 5G and beyond technology. THz frequencies also offer unique characteristics, such as penetrating most dielectric materials like fabric, plastic, and leather, making them appealing for imaging and sensing applications. Therefore, employing a high-power room temperature, tunable THz emitters, and a high responsivity THz detector is essential. Dyakonov-theory Shur\u27s was applied in this dissertation to achieve tunable THz detection and emission by plasma waves in high carrier density channels of field-effect devices. The first major contribution of this dissertation is developing graphene-based THz plasmonics detector with high responsivity. An upside-down free-standing graphene in a field effect transistor based resonant room temperature THz detector device with significantly improved mobility and gate control has been presented. The highest achieved responsivity is ~3.1kV/W, which is more than 10 times higher than any THz detector reported till now. The active region is predominantly single-layer graphene with multi-grains, even though the fabricated graphene THz detector has the highest responsivity. The challenges encountered during the fabrication and measurement of the graphene-based detector have been described, along with a strategy to overcome them while preserving high graphene mobility. In our new design, a monolayer of hBN underneath the graphene layer has been deposited to increase the mobility and electron concentration rate further. We also investigated the diamond-based FETs for their potential characteristics as a THz emitters and detectors. Diamond\u27s wide bandgap, high breakdown field, and high thermal conductivity attributes make it a potential semiconductor material for high voltage, high power, and high-temperature operation. Diamond is a good choice for THz and sub-THz applications because of its high optical phonon scattering and high momentum relaxation time. Numerical and analytical studies of diamond materials, including p-diamond and n-diamond materials, are presented, indicating their effectiveness as a prospective contender for high temperature and high power-based terahertz applications These detectors are expected to be a strong competitor for future THz on-chip applications due to their high sensitivity, low noise, tunability, compact size, mobility, faster response time, room temperature operation, and lower cost. Furthermore, when plasma wave instabilities are induced with the proper biasing, the same devices can be employed as THz emitters, which are expected to have a higher emission power. Another key contribution is developing a method for detecting counterfeit, damaged, forged, or defective ICs has been devised utilizing a new non-destructive and unobtrusive terahertz testing approach to address the crucial point of hardware cybersecurity and system reliability. The response of MMICs, VLSI, and ULSIC to incident terahertz and sub-terahertz radiation at the circuit pins are measured and analyzed using deep learning. More sophisticated terahertz response profiles and signatures of specific ICs can be created by measuring a more significant number of pins under different frequencies, polarizations, and depth of focus. The proposed method has no effect on ICs operation and could provide precise ICs signatures. The classification process between the secure and unsecure ICs images has been explained using data augmentation and transfer learning-based convolution neural network with ~98% accuracy. A planar nanomatryoshka type core-shell resonator with hybrid toroidal moments is shown both experimentally and analytically, allowing unique characteristics to be explored. This resonator may be utilized for accurate sensing, immunobiosensing, quick switching, narrow-band filters, and other applications

Laterally Movable Gate Field Effect Transistor (LMGFET) for microsensor and microactuator applications

Laterally Movable Gate Field Effect Transistor (LMGFET) invented at LSU as a microactuator is the subject of study in this research. The gate moving in lateral direction in a LMGFET changes channel width but keeps the channel length and the gap between the metal gate and the gate oxide constant. LMGFET offers linear change in drain current with gate motion and a large displacement range. This research is the first demonstration of LMGFET. In this dissertation, a post-IC LIGA-like process for LMGFET microstructure fabrication has been developed that is compatible with monolithic integration with CMOS circuitry. A two-mask post-IC process has been developed in this research for LMGFET fabrication. This novel process utilizes S1813 photoresist as a sacrificial layer in conjunction with a thicker resist like AZ P4620 or SU-8 as an electroplating mold. New curing temperatures for the sacrificial layer photoresist have been determined for this purpose. LMGFET microstructures have been successfully integrated with CMOS circuitry on the same chip to form integrated microsystem. LMGFET microstructure driven by a comb-drive with serpentine retaining spring shows sensitivities Sel of 2 and 1.43 nA/V respectively at 5 and 25 Hz. These numbers reflect that LMGFET is capable of measuring nm range displacement. Electrical characteristics of a depletion type LMGFET structure are measured and show an average sensitivity Sl of - 4 µA/µm at drain to source voltage VDS of 10 V with the gate shorted to source. Several applications of microsystems utilizing LMGFET microstructures as a position sensor or an accelerometer, a spectrum analyzer or an electro-mechanical filter and a mechanical/optical switch are described

Laser direct written silicon nanowires for electronic and sensing applications

Silicon nanowires are promising building blocks for high-performance electronics and chemical/biological sensing devices due to their ultra-small body and high surface-to-volume ratios. However, the lack of the ability to assemble and position nanowires in a highly controlled manner still remains an obstacle to fully exploiting the substantial potential of nanowires. Here we demonstrate a one-step method to synthesize intrinsic and doped silicon nanowires for device applications. Sub-diffraction limited nanowires as thin as 60 nm are synthesized using laser direct writing in combination with chemical vapor deposition, which has the advantages of in-situ doping, catalyst-free growth, and precise control of position, orientation, and length. The synthesized nanowires have been fabricated into field effect transistors (FETs) and FET sensors. The FET sensors are employed to detect the proton concentration (pH) of an aqueous solution and highly sensitive pH sensing is demonstrated. Both top- and back-gated silicon nanowire FETs are demonstrated and electrically characterized. In addition, modulation-doped nanowires are synthesized by changing dopant gases during the nanowire growth. The axial p-n junction nanowires are electrically characterized to demonstrate the diode behavior and the transition between dopant levels are measured using Kelvin probe force microscopy

Two-Dimensional Electronics - Prospects and Challenges

During the past 10 years, two-dimensional materials have found incredible attention in the scientific community. The first two-dimensional material studied in detail was graphene, and many groups explored its potential for electronic applications. Meanwhile, researchers have extended their work to two-dimensional materials beyond graphene. At present, several hundred of these materials are known and part of them is considered to be useful for electronic applications. Rapid progress has been made in research concerning two-dimensional electronics, and a variety of transistors of different two-dimensional materials, including graphene, transition metal dichalcogenides, e.g., MoS2 and WS2, and phosphorene, have been reported. Other areas where two-dimensional materials are considered promising are sensors, transparent electrodes, or displays, to name just a few. This Special Issue of Electronics is devoted to all aspects of two-dimensional materials for electronic applications, including material preparation and analysis, device fabrication and characterization, device physics, modeling and simulation, and circuits. The devices of interest include, but are not limited to transistors (both field-effect transistors and alternative transistor concepts), sensors, optoelectronics devices, MEMS and NEMS, and displays

Two-Dimensional Electronics and Optoelectronics

The discovery of monolayer graphene led to a Nobel Prize in Physics being awarded in 2010. This has stimulated further research on a wide variety of two-dimensional (2D) layered materials. The coupling of metallic graphene, semiconducting 2D transition metal dichalcogenides (TMDCs) and black phosphorus have attracted a tremendous amount of interest in new electronic and optoelectronic applications. Together with other 2D materials, such as the wide band gap boron nitride nanosheets (BNNSs), all these 2D materials have led towards an emerging field of van der Waal 2D heterostructures. The papers in this book were originally published by Electronics (MDPI) in a Special Issue on “Two-Dimensional Electronics and Optoelectronics”. The book consists of eight papers, including two review articles, covering various pertinent and fascinating issues concerning 2D materials and devices. Further, the potential and the challenges of 2D materials are discussed, which provide up to date guidance for future research and development