Approche industrielle aux boîtes quantiques dans des dispositifs de silicium sur isolant complètement déplété pour applications en information quantique

La mise en oeuvre des qubits de spin électronique à base de boîtes quantiques réalisés en utilisant une technologie avancée de métal-oxyde-semiconducteur complémentaire (en anglais: CMOS ou Complementary Metal-Oxide-Semiconductor) fonctionnant à des températures cryogéniques permet d’envisager la fabrication industrielle reproductible et à haut rendement de systèmes de qubits de spin à grande échelle. Le développement d’une architecture de boîtes quantiques à base de silicium fabriquées en utilisant exclusivement des techniques de fabrication industrielle CMOS constitue une étape majeure dans cette direction. Dans cette thèse, le potentiel de la technologie UTBB (en anglais: Ultra-Thin Body and Buried oxide) silicium sur isolant complétement déplété (en anglais: FD-SOI ou Fully Depleted Silicon-On-Insulator) 28 nm de STMicroelectronics (Crolles, France) a été étudié pour la mise en oeuvre de boîtes quantiques bien définies, capables de réaliser des systèmes de qubit de spin. Dans ce contexte, des mesures d’effet Hall ont été réalisées sur des microstructures FD-SOI à 4.2 K afin de déterminer la qualité du noeud technologique pour les applications de boîtes quantiques. De plus, un flot du processus d’intégration, optimisé pour la mise en oeuvre de dispositifs quantiques utilisant exclusivement des méthodes de fonderie de silicium pour la production de masse est présenté, en se concentrant sur la réduction des risques de fabrication et des délais d’exécution globaux. Enfin, deux géométries différentes de dispositifs à boîtes quantiques FD-SOI de 28nm ont été conçues et leurs performances ont été étudiées à 1.4 K. Dans le cadre d’une collaboration entre Nanoacademic Technologies, Institut quantique et STMicroelectronics, un modèle QTCAD (en anglais: Quantum Technology Computer-Aided Design) en 3D a été développé pour la modélisation de dispositifs à boîtes quantiques FD-SOI. Ainsi, en complément de la caractérisation expérimentale des structures de test via des mesures de transport et de spectroscopie de blocage de Coulomb, leur performance est modélisée et analysée à l’aide du logiciel QTCAD. Les résultats présentés ici démontrent les avantages de la technologie FD-SOI par rapport à d’autres approches pour les applications de calcul quantique, ainsi que les limites identifiées du noeud 28 nm dans ce contexte. Ce travail ouvre la voie à la mise en oeuvre des nouvelles générations de dispositifs à boîtes quantiques FD-SOI basées sur des noeuds technologiques inférieurs.Abstract: Electron spin qubits based on quantum dots implemented using advanced Complementary Metal-Oxide-Semiconductor (CMOS) technology functional at cryogenic temperatures promise to enable reproducible high-yield industrial manufacturing of large-scale spin qubit systems. A milestone in this direction is to develop a silicon-based quantum dot structure fabricated using exclusively CMOS industrial manufacturing techniques. In this thesis, the potential of the industry-standard process 28 nm Ultra-Thin Body and Buried oxide (UTBB) Fully Depleted Silicon-On-Insulator (FD-SOI) technology of STMicroelectronics (Crolles, France) was investigated for the implementation of well-defined quantum dots capable to realize spin qubit systems. In this context, Hall effect measurements were performed on FD-SOI microstructures at 4.2 K to determine the quality of the technology node for quantum dot applications. Moreover, an optimized integration process flow for the implementation of quantum devices, using exclusively mass-production silicon-foundry methods is presented, focusing on reducing manufacturing risks and overall turnaround times. Finally, two different geometries of 28 nm FD-SOI quantum dot devices were conceived, and their performance was studied at 1.4 K. In the framework of a collaboration between Nanoacademic Technologies, Institut quantique, and STMicroelectronics, a 3D Quantum Technology Computer-Aided Design (QTCAD) model was developed for FD-SOI quantum dot device modeling. Therefore, along with the experimental characterization of the test structures via transport and Coulomb blockade spectroscopy measurements, their performance is modeled and analyzed using the QTCAD software. The results reported here demonstrate the advantages of the FD-SOI technology over other approaches for quantum computing applications, as well as the identified limitations of the 28 nm node in this context. This work paves the way for the implementation of the next generations of FD-SOI quantum dot devices based on lower technology nodes

Always-On 674uW @ 4GOP/s Error Resilient Binary Neural Networks with Aggressive SRAM Voltage Scaling on a 22nm IoT End-Node

Binary Neural Networks (BNNs) have been shown to be robust to random bit-level noise, making aggressive voltage scaling attractive as a power-saving technique for both logic and SRAMs. In this work, we introduce the first fully programmable IoT end-node system-on-chip (SoC) capable of executing software-defined, hardware-accelerated BNNs at ultra-low voltage. Our SoC exploits a hybrid memory scheme where error-vulnerable SRAMs are complemented by reliable standard-cell memories to safely store critical data under aggressive voltage scaling. On a prototype in 22nm FDX technology, we demonstrate that both the logic and SRAM voltage can be dropped to 0.5Vwithout any accuracy penalty on a BNN trained for the CIFAR-10 dataset, improving energy efficiency by 2.2X w.r.t. nominal conditions. Furthermore, we show that the supply voltage can be dropped to 0.42V (50% of nominal) while keeping more than99% of the nominal accuracy (with a bit error rate ~1/1000). In this operating point, our prototype performs 4Gop/s (15.4Inference/s on the CIFAR-10 dataset) by computing up to 13binary ops per pJ, achieving 22.8 Inference/s/mW while keeping within a peak power envelope of 674uW - low enough to enable always-on operation in ultra-low power smart cameras, long-lifetime environmental sensors, and insect-sized pico-drones.Comment: Submitted to ISICAS2020 journal special issu

Study of Radiation Tolerant Storage Cells for Digital Systems

Single event upsets (SEUs) are a significant reliability issue in semiconductor devices. Fully Depleted Silicon-on-Insulator (FDSOI) technologies have been shown to exhibit better SEU performance compared to bulk technologies. This is attributed to the thin Silicon (Si) layer on top of a Buried Oxide (BOX) layer, which allows each transistor to function as an insulated Si island, thus reducing the threat of charge-sharing. Moreover, the small volume of the Si in FDSOI devices results in a reduction of the amount of charge induced by an ion strike. The effects of Total Ionizing Dose (TID) on integrated circuits (ICs) can lead to changes in gate propagation delays, leakage currents, and device functionality. When IC circuits are exposed to ionizing radiation, positive charges accumulate in the gate oxide and field oxide layers, which results in reduced gate control and increased leakage current. TID effects in bulk technologies are usually simpler due to the presence of only one gate oxide layer, but FDSOI technologies have a more complex response to TID effects because of the additional BOX layer. In this research, we aim to address the challenges of developing cost-effective electronics for space applications by bridging the gap between expensive space-qualified components and high-performance commercial technologies. Key research questions involve exploring various radiation-hardening-by-design (RHBD) techniques and their trade-offs, as well as investigating the feasibility of radiation-hardened microcontrollers. The effectiveness of RHBD techniques in mitigating soft errors is well-established. In our study, a test chip was designed using the 22-nm FDSOI process, incorporating multiple RHBD Flip-Flop (FF) chains alongside a conventional FF chain. Three distinct types of ring oscillators (ROs) and a 256 kbit SRAM was also fabricated in the test chip. To evaluate the SEU and TID performance of these designs, we conducted multiple irradiation experiments with alpha particles, heavy ions, and gamma-rays. Alpha particle irradiation tests were carried out at the University of Saskatchewan using an Americium-241 alpha source. Heavy ion experiments were performed at the Texas A&M University Cyclotron Institute, utilizing Ne, Ar, Cu, and Ag in a 15 MeV/amu cocktail. Lastly, TID experiments were conducted using a Gammacell 220 Co-60 chamber at the University of Saskatchewan. By evaluating the performance of these designs under various irradiation conditions, we strive to advance the development of cost-effective, high-performance electronics suitable for space applications, ultimately demonstrating the significance of this project. When exposed to heavy ions, radiation-hardened FFs demonstrated varying levels of improvement in SEU performance, albeit with added power and timing penalties compared to conventional designs. Stacked-transistor DFF designs showed significant enhancement, while charge-cancelling and interleaving techniques further reduced upsets. Guard-gate (GG) based FF designs provided additional SEU protection, with the DFR-FF and GG-DICE FF designs showing zero upsets under all test conditions. Schmitt-trigger-based DFF designs exhibited improved SEU performance, making them attractive choices for hardening applications. The 22-nm FDSOI process proved more resilient to TID effects than the 28-nm process; however, TID effects remained prominent, with increased leakage current and SRAM block degradation at high doses. These findings offer valuable insights for designers aiming to meet performance and SER specifications for circuits in radiation environments, emphasizing the need for additional attention during the design phase for complex radiation-hardened circuits

Low-Power Design of Digital VLSI Circuits around the Point of First Failure

As an increase of intelligent and self-powered devices is forecasted for our future everyday life, the implementation of energy-autonomous devices that can wirelessly communicate data from sensors is crucial. Even though techniques such as voltage scaling proved to effectively reduce the energy consumption of digital circuits, additional energy savings are still required for a longer battery life. One of the main limitations of essentially any low-energy technique is the potential degradation of the quality of service (QoS). Thus, a thorough understanding of how circuits behave when operated around the point of first failure (PoFF) is key for the effective application of conventional energy-efficient methods as well as for the development of future low-energy techniques. In this thesis, a variety of circuits, techniques, and tools is described to reduce the energy consumption in digital systems when operated either in the safe and conservative exact region, close to the PoFF, or even inside the inexact region. A straightforward approach to reduce the power consumed by clock distribution while safely operating in the exact region is dual-edge-triggered (DET) clocking. However, the DET approach is rarely taken, primarily due to the perceived complexity of its integration. In this thesis, a fully automated design flow is introduced for applying DET clocking to a conventional single-edge-triggered (SET) design. In addition, the first static true-single-phase-clock DET flip-flop (DET-FF) that completely avoids clock-overlap hazards of DET registers is proposed. Even though the correct timing of synchronous circuits is ensured in worst-case conditions, the critical path might not always be excited. Thus, dynamic clock adjustment (DCA) has been proposed to trim any available dynamic timing margin by changing the operating clock frequency at runtime. This thesis describes a dynamically-adjustable clock generator (DCG) capable of modifying the period of the produced clock signal on a cycle-by-cycle basis that enables the DCA technique. In addition, a timing-monitoring sequential (TMS) that detects input transitions on either one of the clock phases to enable the selection of the best timing-monitoring strategy at runtime is proposed. Energy-quality scaling techniques aimat trading lower energy consumption for a small degradation on the QoS whenever approximations can be tolerated. In this thesis, a low-power methodology for the perturbation of baseline coefficients in reconfigurable finite impulse response (FIR) filters is proposed. The baseline coefficients are optimized to reduce the switching activity of the multipliers in the FIR filter, enabling the possibility of scaling the power consumption of the filter at runtime. The area as well as the leakage power of many system-on-chips is often dominated by embedded memories. Gain-cell embedded DRAM (GC-eDRAM) is a compact, low-power and CMOS-compatible alternative to the conventional static random-access memory (SRAM) when a higher memory density is desired. However, due to GC-eDRAMs relying on many interdependent variables, the adaptation of existing memories and the design of future GCeDRAMs prove to be highly complex tasks. Thus, the first modeling tool that estimates timing, memory availability, bandwidth, and area of GC-eDRAMs for a fast exploration of their design space is proposed in this thesis

A review of advances in pixel detectors for experiments with high rate and radiation

The Large Hadron Collider (LHC) experiments ATLAS and CMS have established hybrid pixel detectors as the instrument of choice for particle tracking and vertexing in high rate and radiation environments, as they operate close to the LHC interaction points. With the High Luminosity-LHC upgrade now in sight, for which the tracking detectors will be completely replaced, new generations of pixel detectors are being devised. They have to address enormous challenges in terms of data throughput and radiation levels, ionizing and non-ionizing, that harm the sensing and readout parts of pixel detectors alike. Advances in microelectronics and microprocessing technologies now enable large scale detector designs with unprecedented performance in measurement precision (space and time), radiation hard sensors and readout chips, hybridization techniques, lightweight supports, and fully monolithic approaches to meet these challenges. This paper reviews the world-wide effort on these developments.Comment: 84 pages with 46 figures. Review article.For submission to Rep. Prog. Phy

Radiation Tolerant Electronics, Volume II

Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation hardened electronics for space applications, high-energy physics experiments such as those on the large hadron collider at CERN, and many terrestrial nuclear applications, including nuclear energy and safety management. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their ionizing radiation susceptibility has raised many exciting challenges, which are expected to drive research in the coming decade.After the success of the first Special Issue on Radiation Tolerant Electronics, the current Special Issue features thirteen articles highlighting recent breakthroughs in radiation tolerant integrated circuit design, fault tolerance in FPGAs, radiation effects in semiconductor materials and advanced IC technologies and modelling of radiation effects

Embedding Logic and Non-volatile Devices in CMOS Digital Circuits for Improving Energy Efficiency

abstract: Static CMOS logic has remained the dominant design style of digital systems for more than four decades due to its robustness and near zero standby current. Static CMOS logic circuits consist of a network of combinational logic cells and clocked sequential elements, such as latches and flip-flops that are used for sequencing computations over time. The majority of the digital design techniques to reduce power, area, and leakage over the past four decades have focused almost entirely on optimizing the combinational logic. This work explores alternate architectures for the flip-flops for improving the overall circuit performance, power and area. It consists of three main sections. First, is the design of a multi-input configurable flip-flop structure with embedded logic. A conventional D-type flip-flop may be viewed as realizing an identity function, in which the output is simply the value of the input sampled at the clock edge. In contrast, the proposed multi-input flip-flop, named PNAND, can be configured to realize one of a family of Boolean functions called threshold functions. In essence, the PNAND is a circuit implementation of the well-known binary perceptron. Unlike other reconfigurable circuits, a PNAND can be configured by simply changing the assignment of signals to its inputs. Using a standard cell library of such gates, a technology mapping algorithm can be applied to transform a given netlist into one with an optimal mixture of conventional logic gates and threshold gates. This approach was used to fabricate a 32-bit Wallace Tree multiplier and a 32-bit booth multiplier in 65nm LP technology. Simulation and chip measurements show more than 30% improvement in dynamic power and more than 20% reduction in core area. The functional yield of the PNAND reduces with geometry and voltage scaling. The second part of this research investigates the use of two mechanisms to improve the robustness of the PNAND circuit architecture. One is the use of forward and reverse body biases to change the device threshold and the other is the use of RRAM devices for low voltage operation. The third part of this research focused on the design of flip-flops with non-volatile storage. Spin-transfer torque magnetic tunnel junctions (STT-MTJ) are integrated with both conventional D-flipflop and the PNAND circuits to implement non-volatile logic (NVL). These non-volatile storage enhanced flip-flops are able to save the state of system locally when a power interruption occurs. However, manufacturing variations in the STT-MTJs and in the CMOS transistors significantly reduce the yield, leading to an overly pessimistic design and consequently, higher energy consumption. A detailed analysis of the design trade-offs in the driver circuitry for performing backup and restore, and a novel method to design the energy optimal driver for a given yield is presented. Efficient designs of two nonvolatile flip-flop (NVFF) circuits are presented, in which the backup time is determined on a per-chip basis, resulting in minimizing the energy wastage and satisfying the yield constraint. To achieve a yield of 98%, the conventional approach would have to expend nearly 5X more energy than the minimum required, whereas the proposed tunable approach expends only 26% more energy than the minimum. A non-volatile threshold gate architecture NV-TLFF are designed with the same backup and restore circuitry in 65nm technology. The embedded logic in NV-TLFF compensates performance overhead of NVL. This leads to the possibility of zero-overhead non-volatile datapath circuits. An 8-bit multiply-and- accumulate (MAC) unit is designed to demonstrate the performance benefits of the proposed architecture. Based on the results of HSPICE simulations, the MAC circuit with the proposed NV-TLFF cells is shown to consume at least 20% less power and area as compared to the circuit designed with conventional DFFs, without sacrificing any performance.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

Phase Noise Analyses and Measurements in the Hybrid Memristor-CMOS Phase-Locked Loop Design and Devices Beyond Bulk CMOS

Phase-locked loop (PLLs) has been widely used in analog or mixed-signal integrated circuits. Since there is an increasing market for low noise and high speed devices, PLLs are being employed in communications. In this dissertation, we investigated phase noise, tuning range, jitter, and power performances in different architectures of PLL designs. More energy efficient devices such as memristor, graphene, transition metal di-chalcogenide (TMDC) materials and their respective transistors are introduced in the design phase-locked loop. Subsequently, we modeled phase noise of a CMOS phase-locked loop from the superposition of noises from its building blocks which comprises of a voltage-controlled oscillator, loop filter, frequency divider, phase-frequency detector, and the auxiliary input reference clock. Similarly, a linear time-invariant model that has additive noise sources in frequency domain is used to analyze the phase noise. The modeled phase noise results are further compared with the corresponding phase-locked loop designs in different n-well CMOS processes. With the scaling of CMOS technology and the increase of the electrical field, the problem of short channel effects (SCE) has become dominant, which causes decay in subthreshold slope (SS) and positive and negative shifts in the threshold voltages of nMOS and pMOS transistors, respectively. Various devices are proposed to continue extending Moore\u27s law and the roadmap in semiconductor industry. We employed tunnel field effect transistor owing to its better performance in terms of SS, leakage current, power consumption etc. Applying an appropriate bias voltage to the gate-source region of TFET causes the valence band to align with the conduction band and injecting the charge carriers. Similarly, under reverse bias, the two bands are misaligned and there is no injection of carriers. We implemented graphene TFET and MoS2 in PLL design and the results show improvements in phase noise, jitter, tuning range, and frequency of operation. In addition, the power consumption is greatly reduced due to the low supply voltage of tunnel field effect transistor

Circuits and Systems Advances in Near Threshold Computing

Modern society is witnessing a sea change in ubiquitous computing, in which people have embraced computing systems as an indispensable part of day-to-day existence. Computation, storage, and communication abilities of smartphones, for example, have undergone monumental changes over the past decade. However, global emphasis on creating and sustaining green environments is leading to a rapid and ongoing proliferation of edge computing systems and applications. As a broad spectrum of healthcare, home, and transport applications shift to the edge of the network, near-threshold computing (NTC) is emerging as one of the promising low-power computing platforms. An NTC device sets its supply voltage close to its threshold voltage, dramatically reducing the energy consumption. Despite showing substantial promise in terms of energy efficiency, NTC is yet to see widescale commercial adoption. This is because circuits and systems operating with NTC suffer from several problems, including increased sensitivity to process variation, reliability problems, performance degradation, and security vulnerabilities, to name a few. To realize its potential, we need designs, techniques, and solutions to overcome these challenges associated with NTC circuits and systems. The readers of this book will be able to familiarize themselves with recent advances in electronics systems, focusing on near-threshold computing

Temperature Variation Operation of Mixed-VT 3T GC-eDRAM for Low Power Applications in 2Kbit Memory Array

Embedded memories were once utilized to transfer information between the CPU and the main memory. The cache storage in most traditional computers was static-random-access-memory (SRAM). Other memory technologies, such as embedded dynamic random-access memory (eDRAM) and spin-transfer-torque random-access memory (STT-RAM), have also been used to store cache data. The SRAM, on the other hand, has a low density and severe leakage issues, and the STT-RAM has high latency and energy consumption when writing. The gain-cell eDRAM (GC-eDRAM), which has a higher density, lower leakage, logic compatibility, and is appropriate for two-port operations, is an attractive option. To speed up data retrieval from the main memory, future processors will require larger and faster-embedded memories. Area overhead, power overhead, and speed performance are all issues with the existing architecture. A unique mixed-V_T 3T GC-eDRAM architecture is suggested in this paper to improve data retention times (DRT) and performance for better energy efficiency in embedded memories. The GC-eDRAM is simulated using a standard complementary-metal-oxide-semiconductor (CMOS) with a 130nm technology node transistor. The performance of a 2kbit mixed-V_T 3T GC-eDRAM array were evaluated through corner process simulations. Each memory block is designed and simulated using Mentor Graphics Software. The array, which is based on the suggested bit-cell, has been successfully operated at 400Mhz under a 1V supply and takes up almost 60-75% less space than 6T SRAM using the same technology. When compared to the existing 6T and 4T ULP SRAMs (others' work), the retention power of the proposed GC-eDRAM is around 80-90% lower