Development of high speed integrated circuit for very high resolution timing measurements

A multi-channel high-precision low-power time-to-digital converter application specific integrated circuit for high energy physics applications has been designed and implemented in a 130 nm CMOS process. To reach a target resolution of 24.4 ps, a novel delay element has been conceived. This nominal resolution has been experimentally verified with a prototype, with a minimum resolution of 19 ps. To further improve the resolution, a new interpolation scheme has been described. The ASIC has been designed to use a reference clock with the LHC bunch crossing frequency of 40MHz and generate all required timing signals internally, to ease to use within the framework of an LHC upgrade. Special care has been taken to minimise the power consumption

Novel Front-end Electronics for Time Projection Chamber Detectors

Este trabajo ha sido realizado en la Organización Europea para la Investigación Nuclear (CERN) y forma parte del proyecto de investigación Europeo para futuros aceleradores lineales (EUDET). En física de partículas existen diferentes categorías de detectores de partículas. El diseño presentado esta centrado en un tipo particular de detector de trayectoria de partículas denominado TPC (Time Projection Chamber) que proporciona una imagen en tres dimensiones de las partículas eléctricamente cargadas que atraviesan su volumen gaseoso. La tesis incluye un estudio de los objetivos para futuros detectores, resumiendo los parámetros que un sistema de adquisición de datos debe cumplir en esos casos. Además, estos requisitos son comparados con los actuales sistemas de lectura utilizados en diferentes detectores TPC. Se concluye que ninguno de los sistemas cumple las restrictivas condiciones. Algunos de los principales objetivos para futuros detectores TPC son un altísimo nivel de integración, incremento del número de canales, electrónica más rápida y muy baja potencia. El principal inconveniente del estado del arte de los sistemas anteriores es la utilización de varios circuitos integrados en la cadena de adquisición. Este hecho hace imposible alcanzar el altísimo nivel de integración requerido para futuros detectores. Además, un aumento del número de canales y frecuencia de muestreo haría incrementar hasta valores no permitidos la potencia utilizada. Y en consecuencia, incrementar la refrigeración necesaria (en caso de ser posible). Una de las novedades presentadas es la integración de toda la cadena de adquisición (filtros analógicos de entrada, conversor analógico-digital (ADC) y procesado de señal digital) en un único circuito integrado en tecnología de 130nm. Este chip es el primero que realiza esta altísima integración para detectores TPC. Por otro lado, se presenta un análisis detallado de los filtros de procesado de señal. Los objetivos más importantes es la reduccióGarcía García, EJ. (2012). Novel Front-end Electronics for Time Projection Chamber Detectors [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/16980Palanci

Low-Power Energy Efficient Circuit Techniques for Small IoT Systems

Although the improvement in circuit speed has been limited in recent years, there has been increased focus on the internet of things (IoT) as technology scaling has decreased circuit size, power usage and cost. This trend has led to the development of many small sensor systems with affordable costs and diverse functions, offering people convenient connection with and control over their surroundings. This dissertation discusses the major challenges and their solutions in realizing small IoT systems, focusing on non-digital blocks, such as power converters and analog sensing blocks, which have difficulty in following the traditional scaling trends of digital circuits. To accommodate the limited energy storage and harvesting capacity of small IoT systems, this dissertation presents an energy harvester and voltage regulators with low quiescent power and good efficiency in ultra-low power ranges. Switched-capacitor-based converters with wide-range energy-efficient voltage-controlled oscillators assisted by power-efficient self-oscillating voltage doublers and new cascaded converter topologies for more conversion ratio configurability achieve efficient power conversion down to several nanowatts. To further improve the power efficiency of these systems, analog circuits essential to most wireless IoT systems are also discussed and improved. A capacitance-to-digital sensor interface and a clocked comparator design are improved by their digital-like implementation and operation in phase and frequency domain. Thanks to the removal of large passive elements and complex analog blocks, both designs achieve excellent area reduction while maintaining state-of-art energy efficiencies. Finally, a technique for removing dynamic voltage and temperature variations is presented as smaller circuits in advanced technologies are more vulnerable to these variations. A 2-D simultaneous feedback control using an on-chip oven control locks the supply voltage and temperature of a small on-chip domain and protects circuits in this locked domain from external voltage and temperature changes, demonstrating 0.0066 V/V and 0.013 °C/°C sensitivities to external changes. Simple digital implementation of the sensors and most parts of the control loops allows robust operation within wide voltage and temperature ranges.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttps://deepblue.lib.umich.edu/bitstream/2027.42/138743/1/wanyeong_1.pd

Integrated Circuit Design for Radiation Sensing and Hardening.

Beyond the 1950s, integrated circuits have been widely used in a number of electronic devices surrounding people’s lives. In addition to computing electronics, scientific and medical equipment have also been undergone a metamorphosis, especially in radiation related fields where compact and precision radiation detection systems for nuclear power plants, positron emission tomography (PET), and radiation hardened by design (RHBD) circuits for space applications fabricated in advanced manufacturing technologies are exposed to the non-negligible probability of soft errors by radiation impact events. The integrated circuit design for radiation measurement equipment not only leads to numerous advantages on size and power consumption, but also raises many challenges regarding the speed and noise to replace conventional design modalities. This thesis presents solutions to front-end receiver designs for radiation sensors as well as an error detection and correction method to microprocessor designs under the condition of soft error occurrence. For the first preamplifier design, a novel technique that enhances the bandwidth and suppresses the input current noise by using two inductors is discussed. With the dual-inductor TIA signal processing configuration, one can reduce the fabrication cost, the area overhead, and the power consumption in a fast readout package. The second front-end receiver is a novel detector capacitance compensation technique by using the Miller effect. The fabricated CSA exhibits minimal variation in the pulse shape as the detector capacitance is increased. Lastly, a modified D flip-flop is discussed that is called Razor-Lite using charge-sharing at internal nodes to provide a compact EDAC design for modern well-balanced processors and RHBD against soft errors by SEE.PhDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/111548/1/iykwon_1.pd

Digital CMOS ISFET architectures and algorithmic methods for point-of-care diagnostics

Over the past decade, the surge of infectious diseases outbreaks across the globe is redefining how healthcare is provided and delivered to patients, with a clear trend towards distributed diagnosis at the Point-of-Care (PoC). In this context, Ion-Sensitive Field Effect Transistors (ISFETs) fabricated on standard CMOS technology have emerged as a promising solution to achieve a precise, deliverable and inexpensive platform that could be deployed worldwide to provide a rapid diagnosis of infectious diseases. This thesis presents advancements for the future of ISFET-based PoC diagnostic platforms, proposing and implementing a set of hardware and software methodologies to overcome its main challenges and enhance its sensing capabilities. The first part of this thesis focuses on novel hardware architectures that enable direct integration with computational capabilities while providing pixel programmability and adaptability required to overcome pressing challenges on ISFET-based PoC platforms. This section explores oscillator-based ISFET architectures, a set of sensing front-ends that encodes the chemical information on the duty cycle of a PWM signal. Two initial architectures are proposed and fabricated in AMS 0.35um, confirming multiple degrees of programmability and potential for multi-sensing. One of these architectures is optimised to create a dual-sensing pixel capable of sensing both temperature and chemical information on the same spatial point while modulating this information simultaneously on a single waveform. This dual-sensing capability, verified in silico using TSMC 0.18um process, is vital for DNA-based diagnosis where protocols such as LAMP or PCR require precise thermal control. The COVID-19 pandemic highlighted the need for a deliverable diagnosis that perform nucleic acid amplification tests at the PoC, requiring minimal footprint by integrating sensing and computational capabilities. In response to this challenge, a paradigm shift is proposed, advocating for integrating all elements of the portable diagnostic platform under a single piece of silicon, realising a ``Diagnosis-on-a-Chip". This approach is enabled by a novel Digital ISFET Pixel that integrates both ADC and memory with sensing elements on each pixel, enhancing its parallelism. Furthermore, this architecture removes the need for external instrumentation or memories and facilitates its integration with computational capabilities on-chip, such as the proposed ARM Cortex M3 system. These computational capabilities need to be complemented with software methods that enable sensing enhancement and new applications using ISFET arrays. The second part of this thesis is devoted to these methods. Leveraging the programmability capabilities available on oscillator-based architectures, various digital signal processing algorithms are implemented to overcome the most urgent ISFET non-idealities, such as trapped charge, drift and chemical noise. These methods enable fast trapped charge cancellation and enhanced dynamic range through real-time drift compensation, achieving over 36 hours of continuous monitoring without pixel saturation. Furthermore, the recent development of data-driven models and software methods open a wide range of opportunities for ISFET sensing and beyond. In the last section of this thesis, two examples of these opportunities are explored: the optimisation of image compression algorithms on chemical images generated by an ultra-high frame-rate ISFET array; and a proposed paradigm shift on surface Electromyography (sEMG) signals, moving from data-harvesting to information-focused sensing. These examples represent an initial step forward on a journey towards a new generation of miniaturised, precise and efficient sensors for PoC diagnostics.Open Acces

A mixed-signal ASIC for time and charge measurements with GEM detectors

L'abstract è presente nell'allegato / the abstract is in the attachmen

Low-power CMOS digital-pixel Imagers for high-speed uncooled PbSe IR applications

This PhD dissertation describes the research and development of a new low-cost medium wavelength infrared MWIR monolithic imager technology for high-speed uncooled industrial applications. It takes the baton on the latest technological advances in the field of vapour phase deposition (VPD) PbSe-based medium wavelength IR (MWIR) detection accomplished by the industrial partner NIT S.L., adding fundamental knowledge on the investigation of novel VLSI analog and mixed-signal design techniques at circuit and system levels for the development of the readout integrated device attached to the detector. The work supports on the hypothesis that, by the use of the preceding design techniques, current standard inexpensive CMOS technologies fulfill all operational requirements of the VPD PbSe detector in terms of connectivity, reliability, functionality and scalability to integrate the device. The resulting monolithic PbSe-CMOS camera must consume very low power, operate at kHz frequencies, exhibit good uniformity and fit the CMOS read-out active pixels in the compact pitch of the focal plane, all while addressing the particular characteristics of the MWIR detector: high dark-to-signal ratios, large input parasitic capacitance values and remarkable mismatching in PbSe integration. In order to achieve these demands, this thesis proposes null inter-pixel crosstalk vision sensor architectures based on a digital-only focal plane array (FPA) of configurable pixel sensors. Each digital pixel sensor (DPS) cell is equipped with fast communication modules, self-biasing, offset cancellation, analog-to-digital converter (ADC) and fixed pattern noise (FPN) correction. In-pixel power consumption is minimized by the use of comprehensive MOSFET subthreshold operation. The main aim is to potentiate the integration of PbSe-based infra-red (IR)-image sensing technologies so as to widen its use, not only in distinct scenarios, but also at different stages of PbSe-CMOS integration maturity. For this purpose, we posit to investigate a comprehensive set of functional blocks distributed in two parallel approaches: • Frame-based “Smart” MWIR imaging based on new DPS circuit topologies with gain and offset FPN correction capabilities. This research line exploits the detector pitch to offer fully-digital programmability at pixel level and complete functionality with input parasitic capacitance compensation and internal frame memory. • Frame-free “Compact”-pitch MWIR vision based on a novel DPS lossless analog integrator and configurable temporal difference, combined with asynchronous communication protocols inside the focal plane. This strategy is conceived to allow extensive pitch compaction and readout speed increase by the suppression of in-pixel digital filtering, and the use of dynamic bandwidth allocation in each pixel of the FPA. In order make the electrical validation of first prototypes independent of the expensive PbSe deposition processes at wafer level, investigation is extended as well to the development of affordable sensor emulation strategies and integrated test platforms specifically oriented to image read-out integrated circuits. DPS cells, imagers and test chips have been fabricated and characterized in standard 0.15μm 1P6M, 0.35μm 2P4M and 2.5μm 2P1M CMOS technologies, all as part of research projects with industrial partnership. The research has led to the first high-speed uncooled frame-based IR quantum imager monolithically fabricated in a standard VLSI CMOS technology, and has given rise to the Tachyon series [1], a new line of commercial IR cameras used in real-time industrial, environmental and transportation control systems. The frame-free architectures investigated in this work represent a firm step forward to push further pixel pitch and system bandwidth up to the limits imposed by the evolving PbSe detector in future generations of the device.La present tesi doctoral descriu la recerca i el desenvolupament d'una nova tecnologia monolítica d'imatgeria infraroja de longitud d'ona mitja (MWIR), no refrigerada i de baix cost, per a usos industrials d'alta velocitat. El treball pren el relleu dels últims avenços assolits pel soci industrial NIT S.L. en el camp dels detectors MWIR de PbSe depositats en fase vapor (VPD), afegint-hi coneixement fonamental en la investigació de noves tècniques de disseny de circuits VLSI analògics i mixtes pel desenvolupament del dispositiu integrat de lectura unit al detector pixelat. Es parteix de la hipòtesi que, mitjançant l'ús de les esmentades tècniques de disseny, les tecnologies CMOS estàndard satisfan tots els requeriments operacionals del detector VPD PbSe respecte a connectivitat, fiabilitat, funcionalitat i escalabilitat per integrar de forma econòmica el dispositiu. La càmera PbSe-CMOS resultant ha de consumir molt baixa potència, operar a freqüències de kHz, exhibir bona uniformitat, i encabir els píxels actius CMOS de lectura en el pitch compacte del pla focal de la imatge, tot atenent a les particulars característiques del detector: altes relacions de corrent d'obscuritat a senyal, elevats valors de capacitat paràsita a l'entrada i dispersions importants en el procés de fabricació. Amb la finalitat de complir amb els requisits previs, es proposen arquitectures de sensors de visió de molt baix acoblament interpíxel basades en l'ús d'una matriu de pla focal (FPA) de píxels actius exclusivament digitals. Cada píxel sensor digital (DPS) està equipat amb mòduls de comunicació d'alta velocitat, autopolarització, cancel·lació de l'offset, conversió analògica-digital (ADC) i correcció del soroll de patró fixe (FPN). El consum en cada cel·la es minimitza fent un ús exhaustiu del MOSFET operant en subllindar. L'objectiu últim és potenciar la integració de les tecnologies de sensat d'imatge infraroja (IR) basades en PbSe per expandir-ne el seu ús, no només a diferents escenaris, sinó també en diferents estadis de maduresa de la integració PbSe-CMOS. En aquest sentit, es proposa investigar un conjunt complet de blocs funcionals distribuïts en dos enfocs paral·lels: - Dispositius d'imatgeria MWIR "Smart" basats en frames utilitzant noves topologies de circuit DPS amb correcció de l'FPN en guany i offset. Aquesta línia de recerca exprimeix el pitch del detector per oferir una programabilitat completament digital a nivell de píxel i plena funcionalitat amb compensació de la capacitat paràsita d'entrada i memòria interna de fotograma. - Dispositius de visió MWIR "Compact"-pitch "frame-free" en base a un novedós esquema d'integració analògica en el DPS i diferenciació temporal configurable, combinats amb protocols de comunicació asíncrons dins del pla focal. Aquesta estratègia es concep per permetre una alta compactació del pitch i un increment de la velocitat de lectura, mitjançant la supressió del filtrat digital intern i l'assignació dinàmica de l'ample de banda a cada píxel de l'FPA. Per tal d'independitzar la validació elèctrica dels primers prototips respecte a costosos processos de deposició del PbSe sensor a nivell d'oblia, la recerca s'amplia també al desenvolupament de noves estratègies d'emulació del detector d'IR i plataformes de test integrades especialment orientades a circuits integrats de lectura d'imatge. Cel·les DPS, dispositius d'imatge i xips de test s'han fabricat i caracteritzat, respectivament, en tecnologies CMOS estàndard 0.15 micres 1P6M, 0.35 micres 2P4M i 2.5 micres 2P1M, tots dins el marc de projectes de recerca amb socis industrials. Aquest treball ha conduït a la fabricació del primer dispositiu quàntic d'imatgeria IR d'alta velocitat, no refrigerat, basat en frames, i monolíticament fabricat en tecnologia VLSI CMOS estàndard, i ha donat lloc a Tachyon, una nova línia de càmeres IR comercials emprades en sistemes de control industrial, mediambiental i de transport en temps real.Postprint (published version

Design and Optimization of Low-power Level-crossing ADCs

This thesis investigates some of the practical issues related to the implementation of level-crossing ADCs in nanometer CMOS. A level-crossing ADC targeting minimum power is designed and measured. Three techniques to circumvent performance limitations due to the zero-crossing detector at the heart of the ADC are proposed and demonstrated: an adaptive resolution algorithm, an adaptive bias current algorithm, and automatic offset cancelation. The ADC, fabricated in 130 nm CMOS, is designed to operate over a 20 kHz bandwidth while consuming a maximum of 8.5 uW. A peak SNDR of 54 dB for this 8-bit ADC demonstrates a key advantage of level-crossing sampling, namely SNDR higher than the classic Nyquist limit

Voltage and capacitance sensing using time comparison

PhD ThesisWith the rapid advancement of electronic and mechanical system miniaturisation, new application types such as portable systems, internet of things (IoT) and wireless sensor networks (WSNs) have become promising areas of growth for industry. In these areas, the limits on battery life have opened opportunities for energy harvesting to become a commonplace choice as the system power source, which brings its own problems. One of these problems is that energy harvesting is in general a much more variable energy source than batteries and mains power supply, because of the unpredictable and intermittent nature of the external energy environment [1]. This implies that both energy harvesters and the loads they support require significantly more control, tuning and management than if the energy was supplied by traditional means. On the other hand, sensing is also an important aspect for such systems as many of these systems are sensors used to monitor physical parameters in the environment. Another reason is that the control, tuning and management of energy harvesting requires the support of energy/power sensing. It is therefore inevitable that sensing methods need to be developed targeting an environment where energy supply is volatile. However, sensing under a variable energy supply faces numerous problems. One such problem is the energy consumption of the sensing itself. In this regard, the capacitive sensor is widely used for sensing a physical parameter, such as pressure, position, and humidity, as it is suitable for low-power applications with limited energy budgets [2–4]. Another problem faced by sensing under energy supply variability is the difficulty of maintaining stable voltage and/or current references. This thesis is motivated by these issues. In this thesis, a new sensing method is developed based on time domain techniques, which will be shown to be 1) suitable for capacitive sensing of environmental physical parameters, 2) suitable for sensing voltage, from which power and energy information can be derived, supporting energy harvesting management uses, and 3) robust to voltage and power volatility, making sensors derived from this method useful for miniaturised and energy autonomous systems. At the centre of this work is a novel reference-free voltage level-crossing sensor, realised through time comparison techniques. By working in the time domain, it avoids the need for voltage or current references. Two more sophisticated sensors are then developed around this level-crossing sensing engine. The first is a voltage monitor which is capable of sensing the crossing of multiple predefined voltage boundaries within a range, targeting energy harvesting system management uses. The second is a capacitance-to-digital converter which senses and converts the value of a target capacitance to digital value. This could be used to support the monitoring of physical vi parameters in the environment including pressure, temperature, moisture, etc. as these might be made to directly affect the values of capacitances. This thesis describes detailed design theory and reasoning, implementation, and validation of the presented sensors. Circuits are implemented in very-large-scale integration and investigated in the Cadence Analog Design Environment. In addition to analogue simulations, experiments were also conducted on a fabricated chip. Data collected from these simulation and physical experiments show that the time-domain method developed in this work has quantitative and qualitative advantages over existing designs