A survey of carbon nanotube interconnects for energy efficient integrated circuits

This article is a review of the state-of-art carbon nanotube interconnects for Silicon application with respect to the recent literature. Amongst all the research on carbon nanotube interconnects, those discussed here cover 1) challenges with current copper interconnects, 2) process & growth of carbon nanotube interconnects compatible with back-end-of-line integration, and 3) modeling and simulation for circuit-level benchmarking and performance prediction. The focus is on the evolution of carbon nanotube interconnects from the process, theoretical modeling, and experimental characterization to on-chip interconnect applications. We provide an overview of the current advancements on carbon nanotube interconnects and also regarding the prospects for designing energy efficient integrated circuits. Each selected category is presented in an accessible manner aiming to serve as a survey and informative cornerstone on carbon nanotube interconnects relevant to students and scientists belonging to a range of fields from physics, processing to circuit design

High-speed optical data transmission for detector instrumentation in particle physics

This work discusses the advantage of optical transmission utilizing wavelength-division multiplexing for the read-out of experimental data in detector instrumentation in high-energy physics, astroparticle physics or photon science. A multi-channel optical transmitter is developed as the core component on a silicon-on-insulator platform. It implements Mach-Zehnder modulators with a depletion-type pn-phase shifter in each arm, while the (de )multiplexers rely on planar concave gratings. The modulator design is expected to support a symbol rate in the range 40 GBd even with a phase shifter length of 3 mm. The development of an efficient simulation method is presented, which allows for the reliable prediction of the steady-state modulator characteristics. Furthermore, this work addresses the packaging technology for grating-coupled silicon photonic components. In particular, a fabrication and assembly process for a planar fiber-to-chip coupling using angle-polished single-mode fibers is developed. A long-term-stable coupling with a small footprint is achieved, of which the coupling efficiency is only weakly dependent on ambient conditions

Enabling Technologies for 3D ICs: TSV Modeling and Analysis

Through silicon via (TSV) based three-dimensional (3D) integrated circuit (IC) aims to stack and interconnect dies or wafers vertically. This emerging technology offers a promising near-term solution for further miniaturization and the performance improvement of electronic systems and follows a more than Moore strategy. Along with the need for low-cost and high-yield process technology, the successful application of TSV technology requires further optimization of the TSV electrical modeling and design. In the millimeter wave (mmW) frequency range, the root mean square (rms) height of the TSV sidewall roughness is comparable to the skin depth and hence becomes a critical factor for TSV modeling and analysis. The impact of TSV sidewall roughness on electrical performance, such as the loss and impedance alteration in the mmW frequency range, is examined and analyzed following the second order small perturbation method. Then, an accurate and efficient electrical model for TSVs has been proposed considering the TSV sidewall roughness effect, the skin effect, and the metal oxide semiconductor (MOS) effect. However, the emerging application of 3D integration involves an advanced bio-inspired computing system which is currently experiencing an explosion of interest. In neuromorphic computing, the high density membrane capacitor plays a key role in the synaptic signaling process, especially in a spike firing analog implementation of neurons. We proposed a novel 3D neuromorphic design architecture in which the redundant and dummy TSVs are reconfigured as membrane capacitors. This modification has been achieved by taking advantage of the metal insulator semiconductor (MIS) structure along the sidewall, strategically engineering the fixed oxide charges in depletion region surrounding the TSVs, and the addition of oxide layer around the bump without changing any process technology. Without increasing the circuit area, these reconfiguration of TSVs can result in substantial power consumption reduction and a significant boost to chip performance and efficiency. Also, depending on the availability of the TSVs, we proposed a novel CAD framework for TSV assignments based on the force-directed optimization and linear perturbation

Silicon Photonics for All-Optical Processing and High-Bandwidth-Density Interconnects

Silicon photonics has emerged in recent years as one of the leading technologies poised to enable penetration of optical communications deeper and more intimately into computing systems than ever before. The integration potential of power efficient WDM links at the first level package or even deeper has been a strong driver for the rapid development this field has seen in recent years. The integration of photonic communication modules with very high bandwidth densities and virtually no bandwidth-distance limitations at the short reach regime of high performance computers and data centers has the potential to alleviate many of the bandwidth bottlenecks currently faced by board, rack, and facility levels. While networks on chip for chip multiprocessors (CMP) were initially deemed the target application of silicon photonic components, it has become evident in recent years that the initial lower hanging fruit is the CMP's I/O links to memory as well as other CMPs. The first chapter of the thesis provides more detailed motivation for the integration of silicon photonic modules into compute systems and surveys some of the recent developments in the field. The second chapter then proceeds to detail a technical case study of silicon photonic microring-based WDM links' scalability and power efficiency for these chip I/O applications which could be developed in the intermediate future. The analysis, initiated originally for a workshop on optical and electrical board and rack level interconnects, looks into a detailed model of the optical power budget for such a link capturing both single-channel aspects as well as WDM-operation-related considerations which are unique for a microring physical characteristics. The holistic analysis for the full link captures the wavelength-channel-spacing dependent characteristics, provides some methodologies for device design in the WDM-operation context, and provides performance predictions based on current best-of-class silicon photonic devices. The key results of the analysis are the determination of upper bounds on the aggregate achievable communication bandwidth per link, identifying design trade-offs for bandwidth versus power efficiency, and highlighting the need for continued technological improvements in both laser as well as photodetector technologies to allow acceptable power efficiency operation of such systems.The third chapter, while continuing on the theme silicon photonic high bandwidth density links, proceeds to detail the first experimental demonstration and characterization of an on-chip spatial division multiplexing (SDM) scheme based on microrings for the multiplexing and demultiplexing functionalities. In the context of more forward looking optical network-on-chip environments, SDM-enabled WDM photonic interconnects can potentially achieve superior bandwidth densities per waveguide compared to WDM-only photonic interconnects. The microring-based implementation allows dynamic tuning of the multiplexing and demultiplexing characteristic of the system which allows operation on WDM grid as well device tuning to combat intra-channel crosstalk. The characterization focuses on the first reported power penalty measurements for on-chip silicon photonic SDM link showing minimal penalties achievable with 3 spatial modes concurrently operating on a single waveguide with 10-Gb/s data carried by each mode. The chapter also details the first demonstration of WDM combined with SDM operation with six separate wavelength-and-spatial 10-Gb/s channels with error free operation and low power penalties. The fourth, fifth, and sixth chapters shift in topic from the application of silicon photonics to communication links to the evolving use of silicon waveguides for nonlinear all-optical processing. The unique tight mode confinement in sub-micron cross-sections combined with the high response of silicon have motivated the development of four-wave mixing (FWM)-based processing silicon devices. The key feature of the silicon platform for these nonlinear processing platforms is the ability to finely and uniformly control the dispersive properties of the optical structures in a way that enables completely offsetting the material dispersion and achieve dispersion profiles required for effective parametric interaction of waves in the optical structures. Chapter four primarily introduces and motivates nonlinear processing in communication applications and focuses on recent achievements in non-silicon and silicon FWM platforms. Chapter five describes some of the author's contributions on parametric processing of high speed data in silicon nonlinear devices, with first of a kind demonstrations of wavelength conversion of 160-Gb/s optically time division multiplexed (OTDM) data as well as the wavelength-multicasting of a 320-Gb/s OTDM stream. The chapter then details a methodical characterization and demonstration of several record wavelength conversion experiments of data in silicon with 40-Gb/s data wavelength-converted across more than 100 nm with only 1.4-dB of power penalties as well as the wavelength and format conversion of 10-Gb/s data across up to 168 nm with sensitivity gains stemming from the format conversion of about 2 dB and a residual conversion penalty of only 0.1 dB, achieved by implementing an improved experimental setup. Both experiments highlight the performance uniformity of the conversion process for a wide range of probe-idler detuning settings, showcasing the silicon platform's unique broadband phase matching properties. The sixth chapter presents a slight shift in motivation for parametric processing from traditional telecom-wavelength applications to functionalities developed targeting mid-IR operation. Parametric-processing in the silicon platform at long wavelengths holds large potential for performance improvements due to the elimination of two-photon absorption in silicon at long wavelengths as well as silicon's dispersion engineering capabilities which uniquely position the silicon platform for effective phase matching of significantly wavelength detuned waves. Four-wave mixing signal generation and reception at mid-IR wavelengths are attractive candidates for tunable flexible operation with modulation and detection speeds which are currently only available at telecom wavelengths. With this vision in mind, several contributions detailing extension of FWM functionalities in silicon to operate at wavelengths close to 2 μm with performance equivalent to much smaller detuning setting measurements. The contributions detail the experimental demonstration of the first silicon optical processing functionalities achieved at such long wavelengths including the wavelength conversion and unicast of 10-Gb/s signals with up to 700 nm of probe-idler detuning, the combined two-stage 10-Gb/s FWM-link in which both data generation and detection at 1900 nm is facilitated by parametric processing in silicon with only 2.1-dB overall penalty, the first ever 40-Gb/s receiver at 1900 nm based on a FWM stage for simultaneous temporal demultiplexing and wavelength conversion, and lastly, the demonstration of a 40-Gb/s FWM-link operation with only 3.6 dB of penalty. The chapter concludes with a short discussion on possible extensions to enable silicon parametric processing at even longer wavelengths targeting the mid-IR spectral transmission window of 3-5 μm

Solid State Circuits Technologies

The evolution of solid-state circuit technology has a long history within a relatively short period of time. This technology has lead to the modern information society that connects us and tools, a large market, and many types of products and applications. The solid-state circuit technology continuously evolves via breakthroughs and improvements every year. This book is devoted to review and present novel approaches for some of the main issues involved in this exciting and vigorous technology. The book is composed of 22 chapters, written by authors coming from 30 different institutions located in 12 different countries throughout the Americas, Asia and Europe. Thus, reflecting the wide international contribution to the book. The broad range of subjects presented in the book offers a general overview of the main issues in modern solid-state circuit technology. Furthermore, the book offers an in depth analysis on specific subjects for specialists. We believe the book is of great scientific and educational value for many readers. I am profoundly indebted to the support provided by all of those involved in the work. First and foremost I would like to acknowledge and thank the authors who worked hard and generously agreed to share their results and knowledge. Second I would like to express my gratitude to the Intech team that invited me to edit the book and give me their full support and a fruitful experience while working together to combine this book

HIGH PERFORMANCE CLOCK DISTRIBUTION FOR HIGH-SPEED VLSI SYSTEMS

Tohoku University堀口 進課

Piezoelectric Transducers Based on Aluminum Nitride and Polyimide for Tactile Applications

The development of micro systems with smart sensing capabilities is paving the way to progresses in the technology for humanoid robotics. The importance of sensory feedback has been recognized the enabler of a high degree of autonomy for robotic systems. In tactile applications, it can be exploited not only to avoid objects slipping during their manipulation but also to allow safe interaction with humans and unknown objects and environments. In order to ensure the minimal deformation of an object during subtle manipulation tasks, information not only on contact forces between the object and fingers but also on contact geometry and contact friction characteristics has to be provided. Touch, unlike other senses, is a critical component that plays a fundamental role in dexterous manipulation capabilities and in the evaluation of objects properties such as type of material, shape, texture, stiffness, which is not easily possible by vision alone. Understanding of unstructured environments is made possible by touch through the determination of stress distribution in the surrounding area of physical contact. To this aim, tactile sensing and pressure detection systems should be integrated as an artificial tactile system. As illustrated in the Chapter I, the role of external stimuli detection in humans is provided by a great number of sensorial receptors: they are specialized endings whose structure and location in the skin determine their specific signal transmission characteristics. Especially, mechanoreceptors are specialized in the conversion of the mechanical deformations caused by force, vibration or slip on skin into electrical nerve impulses which are processed and encoded by the central nervous system. Highly miniaturized systems based on MEMS technology seem to imitate properly the large number of fast responsive mechanoreceptors present in human skin. Moreover, an artificial electronic skin should be lightweight, flexible, soft and wearable and it should be fabricated with compliant materials. In this respect a big challenge of bio-inspired technologies is the efficient application of flexible active materials to convert the mechanical pressure or stress into a usable electric signal (voltage or current). In the emerging field of soft active materials, able of large deformation, piezoelectrics have been recognized as a really promising and attractive material in both sensing and actuation applications. As outlined in Chapter II, there is a wide choice of materials and material forms (ceramics: PZT; polycrystalline films: ZnO, AlN; polymers and copolymers: PVDF, PVDF-TrFe) which are actively piezoelectric and exhibit features more or less attractive. Among them, aluminum nitride is a promising piezoelectric material for flexible technology. It has moderate piezoelectric coefficient, when available in c-axis oriented polycrystalline columnar structure, but, at same time, it exhibits low dielectric constant, high temperature stability, large band gap, large electrical resistivity, high breakdown voltage and low dielectric loss which make it suitable for transducers and high thermal conductivity which implies low thermal drifts. The high chemical stability allows AlN to be used in humid environments. Moreover, all the above properties and its deposition method make AlN compatible with CMOS technology. Exploiting the features of the AlN, three-dimensional AlN dome-shaped cells, embedded between two metal electrodes, are proposed in this thesis. They are fabricated on general purpose Kapton™ substrate, exploiting the flexibility of the polymer and the electrical stability of the semiconductor at the same time. As matter of fact, the crystalline layers release a compressive stress over the polymer, generating three-dimensional structures with reduced stiffness, compared to the semiconductor materials. In Chapter III, a mathematical model to calculate the residual stresses which arise because of mismatch in coefficient of thermal expansion between layers and because of mismatch in lattice constants between the substrate and the epitaxially grown films is adopted. The theoretical equation is then used to evaluate the dependence of geometrical features of the fabricated three-dimensional structures on compressive residual stress. Moreover, FEM simulations and theoretical models analysis are developed in order to qualitative explore the operation principle of curved membranes, which are labelled dome-shaped diaphragm transducers (DSDT), both as sensors and as piezo-actuators and for the related design optimization. For the reliability of the proposed device as a force/pressure sensor and piezo-actuator, an exhaustive electromechanical characterization of the devices is carried out. A complete description of the microfabrication processes is also provided. As shown in Chapter IV, standard microfabrication techniques are employed to fabricate the array of DSDTs. The overall microfabrication process involves deposition of metal and piezoelectric films, photolithography and plasma-based dry and wet etching to pattern thin films with the desired features. The DSDT devices are designed and developed according to FEM and theoretical analysis and following the typical requirements of force/pressure systems for tactile applications. Experimental analyses are also accomplished to extract the relationship between the compressive residual stress due to the aluminum nitride and the geometries of the devices. They reveal different deformations, proving the dependence of the geometrical features of the three-dimensional structures on residual stress. Moreover, electrical characterization is performed to determine capacitance and impedance of the DSDTs and to experimentally calculate the relative dielectric constant of sputtered AlN piezoelectric film. In order to investigate the mechanical behaviour of the curved circular transducers, a characterization of the flexural deflection modes of the DSDT membranes is carried out. The natural frequency of vibrations and the corresponding displacements are measured by a Laser Doppler Vibrometer when a suitable oscillating voltage, with known amplitude, is applied to drive the piezo-DSDTs. Finally, being developed for tactile sensing purpose, the proposed technology is tested in order to explore the electromechanical response of the device when impulsive dynamic and/or long static forces are applied. The study on the impulsive dynamic and long static stimuli detection is then performed by using an ad hoc setup measuring both the applied loading forces and the corresponding generated voltage and capacitance variation. These measurements allow a thorough test of the sensing abilities of the AlN-based DSDT cells. Finally, as stated in Chapter V, the proposed technology exhibits an improved electromechanical coupling with higher mechanical deformation per unit energy compared with the conventional plate structures, when the devices are used as piezo-actuator. On the other hand, it is well suited to realize large area tactile sensors for robotics applications, opening up new perspectives to the development of latest generation biomimetic sensors and allowing the design and the fabrication of miniaturized devices

Design, Fabrication, and Validation of a Highly Miniaturized Wirelessly Powered Neural Implant

We have recently witnessed an explosion in the number of neurons that can be recorded and/or stimulated simultaneously during neurophysiological experiments. Experiments have progressed from recording or stimulation with a single electrode to Micro-Electrode Array (MEA) such as the Utah Array. These MEAs can be instrumented with current drivers, neural amplifiers, digitizers and wireless communication links. The broad interest in these MEAs suggests that there is a need for large scale neural recording and stimulation. The ultimate goal is to coordinate the recordings and stimulation of potentially thousands of neurons from many brain areas. Unfortunately, current state-of-the-art MEAs are limited by their scalability and long-term stability because of their physical size and rigid configuration. Furthermore, some applications prioritize a distributed neural interface over one that offers high resolution. Examples of biomedical applications that necessitate an interface with neurons from many sites in the brain include: i) understanding and treating neurological disorders that affect distributed locations throughout the CNS; ii) revolutionizing our understanding of the brain by studying the correlations between neural networks from different regions of the brain and the mechanisms of cognitive functions; and iii) covering larger area in the sensorimotor cortex of amputees to more accurately control robotic prosthetic limbs or better evoke a sense of touch. One solution to make large scale, fully specifiable, electrical stimulation and recording possible, is to disconnect the electrodes from the base, so that they can be arbitrarily placed, using a syringe, freely in the nervous system. To overcome the challenges of system miniaturization, we propose the “microbead”, an ultra-small neural stimulating implant, that is currently implemented in a 130nm CMOS technology with the following characteristics: 200 μm × 200 μm × 80 μm size; optimized wireless powering, all micro-electronics on single chip; and integrated electrodes and coil. The stimulating microbead is validated in a sciatic nerve by generating leg movements. A recording microbead is also investigated with following characteristics: wireless powering using steerable phased coil array, miniaturized front-end, and backscattering telemetry. These microbeads could eventually replace the rigid arrays that are currently the state-of-the-art in electrophysiology set-ups