A fast lightstripe rangefinding system with smart VLSI sensor

The focus of the research is to build a compact, high performance lightstripe rangefinder using a Very Large Scale Integration (VLSI) smart photosensor array. Rangefinding, the measurement of the three-dimensional profile of an object or scene, is a critical component for many robotic applications, and therefore many techniques were developed. Of these, lightstripe rangefinding is one of the most widely used and reliable techniques available. Though practical, the speed of sampling range data by the conventional light stripe technique is severely limited. A conventional light stripe rangefinder operates in a step-and-repeat manner. A stripe source is projected on an object, a video image is acquired, range data is extracted from the image, the stripe is stepped, and the process repeats. Range acquisition is limited by the time needed to grab the video images, increasing linearly with the desired horizontal resolution. During the acquisition of a range image, the objects in the scene being scanned must be stationary. Thus, the long scene sampling time of step-and-repeat rangefinders limits their application. The fast range sensor proposed is based on the modification of this basic lightstripe ranging technique in a manner described by Sato and Kida. This technique does not require a sampling of images at various stripe positions to build a range map. Rather, an entire range image is acquired in parallel while the stripe source is swept continuously across the scene. Total time to acquire the range image data is independent of the range map resolution. The target rangefinding system will acquire 1,000 100 x 100 point range images per second with 0.5 percent range accuracy. It will be compact and rugged enough to be mounted on the end effector of a robot arm to aid in object manipulation and assembly tasks

Interplanetary Particle Environment. Proceedings of a Conference

A workshop entitled the Interplanetary Charged Particle Environment was held at the Jet Propulsion Laboratory (JPL) on March 16 and 17, 1987. The purpose of the Workshop was to define the environment that will be seen by spacecraft operating in the 1990s. It focused on those particles that are involved in single event upset, latch-up, total dose and displacement damage in spacecraft microelectronic parts. Several problems specific to Magellan were also discussed because of the sensitivity of some electronic parts to single-event phenomena. Scientists and engineers representing over a dozen institutions took part in the meeting. The workshop consisted of two major activities, reviews of the current state of knowledge and the formation of working groups and the drafting of their reports

Design And Characterization Of Noveldevices For New Generation Of Electrostaticdischarge (esd) Protection Structures

The technology evolution and complexity of new circuit applications involve emerging reliability problems and even more sensitivity of integrated circuits (ICs) to electrostatic discharge (ESD)-induced damage. Regardless of the aggressive evolution in downscaling and subsequent improvement in applications\u27 performance, ICs still should comply with minimum standards of ESD robustness in order to be commercially viable. Although the topic of ESD has received attention industry-wide, the design of robust protection structures and circuits remains challenging because ESD failure mechanisms continue to become more acute and design windows less flexible. The sensitivity of smaller devices, along with a limited understanding of the ESD phenomena and the resulting empirical approach to solving the problem have yielded time consuming, costly and unpredictable design procedures. As turnaround design cycles in new technologies continue to decrease, the traditional trial-and-error design strategy is no longer acceptable, and better analysis capabilities and a systematic design approach are essential to accomplish the increasingly difficult task of adequate ESD protection-circuit design. This dissertation presents a comprehensive design methodology for implementing custom on-chip ESD protection structures in different commercial technologies. First, the ESD topic in the semiconductor industry is revised, as well as ESD standards and commonly used schemes to provide ESD protection in ICs. The general ESD protection approaches are illustrated and discussed using different types of protection components and the concept of the ESD design window. The problem of implementing and assessing ESD protection structures is addressed next, starting from the general discussion of two design methods. The first ESD design method follows an experimental approach, in which design requirements are obtained via fabrication, testing and failure analysis. The second method consists of the technology computer aided design (TCAD)-assisted ESD protection design. This method incorporates numerical simulations in different stages of the ESD design process, and thus results in a more predictable and systematic ESD development strategy. Physical models considered in the device simulation are discussed and subsequently utilized in different ESD designs along this study. The implementation of new custom ESD protection devices and a further integration strategy based on the concept of the high-holding, low-voltage-trigger, silicon controlled rectifier (SCR) (HH-LVTSCR) is demonstrated for implementing ESD solutions in commercial low-voltage digital and mixed-signal applications developed using complementary metal oxide semiconductor (CMOS) and bipolar CMOS (BiCMOS) technologies. This ESD protection concept proposed in this study is also successfully incorporated for implementing a tailored ESD protection solution for an emerging CMOS-based embedded MicroElectroMechanical (MEMS) sensor system-on-a-chip (SoC) technology. Circuit applications that are required to operate at relatively large input/output (I/O) voltage, above/below the VDD/VSS core circuit power supply, introduce further complications in the development and integration of ESD protection solutions. In these applications, the I/O operating voltage can extend over one order of magnitude larger than the safe operating voltage established in advanced technologies, while the IC is also required to comply with stringent ESD robustness requirements. A practical TCAD methodology based on a process- and device- simulation is demonstrated for assessment of the device physics, and subsequent design and implementation of custom P1N1-P2N2 and coupled P1N1-P2N2//N2P3-N3P1 silicon controlled rectifier (SCR)-type devices for ESD protection in different circuit applications, including those applications operating at I/O voltage considerably above/below the VDD/VSS. Results from the TCAD simulations are compared with measurements and used for developing technology- and circuit-adapted protection structures, capable of blocking large voltages and providing versatile dual-polarity symmetric/asymmetric S-type current-voltage characteristics for high ESD protection. The design guidelines introduced in this dissertation are used to optimize and extend the ESD protection capability in existing CMOS/BiCMOS technologies, by implementing smaller and more robust single- or dual-polarity ESD protection structures within the flexibility provided in the specific fabrication process. The ESD design methodologies and characteristics of the developed protection devices are demonstrated via ESD measurements obtained from fabricated stand-alone devices and on-chip ESD protections. The superior ESD protection performance of the devices developed in this study is also successfully verified in IC applications where the standard ESD protection approaches are not suitable to meet the stringent area constraint and performance requirement

Design and implementation of high-radix arithmetic systems based on the SDNR/RNS data representation

This project involved the design and implementation of high-radix arithmetic systems based on the hybrid SDNRIRNS data representation. Some real-time applications require a real-time arithmetic system. An SDNR/RNS arithmetic system provides parallel, real-time processing. The advantages and disadvantages of high-radix SDNR/RNS arithmetic, and the feasibility of implementing SDNR/RNS arithmetic systems in CMOS VLSI technology, were investigated in this project. A common methodological model, which included the stages of analysis, design, implementation, testing, and simulation, was followed. The combination of the SDNR and RNS transforms potential complex logic networks into simpler logic blocks. It was found that when constructing a SDNRIRNS adder, factors such as the radix, digit set, and moduli must be taken into account. There are many avenues still to explore. For example, implementing other arithmetic systems in the same CMOS VLSI technology used in this project and comparing them to equivalent SDNR/RNS systems would provide a set of benchmarks. These benchmarks would be useful in addressing issues relating to relative performance

Methods to improve the reliability and resiliency of near/sub-threshold digital circuits

Energy consumption is one of the primary bottlenecks to both large and small scale modern compute platforms. Reducing the operating voltage of digital circuits to voltages where the supply voltage is near or below the threshold of the transistors has recently gained attention as a method to reduce the energy required for computations by as much as 6 times. However, when operating at near/sub-threshold voltages (where the supply voltage is near or below the threshold of the transistors), imperfections in transistor manufacturing, changes in temperature, and other difficult-to-predict factors cause wide variations in the timing of Complementary Metal-Oxide Semiconductor (CMOS) circuits due to an increased sensitivity at lower voltages. These increased variations result in poor aggregate performance and cause increased rates of error occurrence in computation. This work introduces several new methods to improve the reliability of near/sub-threshold circuits. The first is a design automation technique that is used to aid in low-voltage digital standard cell synthesis. Second, two circuit-level techniques are also introduced that aim to improve the reliability and resiliency of digital circuits by means of completion/error detection. These techniques are shown to improve speed and lower energy consumption at low overheads compared to previous methods. Most importantly, these circuit-level methods are specifically designed to operate at low voltages and can themselves tolerate variations and operation in harsh environments. Finally, a test-chip prototype designed in 65nm-CMOS demonstrates the practicality and feasibility of a proposed current sensing error detector

Resilience of an embedded architecture using hardware redundancy

In the last decade the dominance of the general computing systems market has being replaced by embedded systems with billions of units manufactured every year. Embedded systems appear in contexts where continuous operation is of utmost importance and failure can be profound. Nowadays, radiation poses a serious threat to the reliable operation of safety-critical systems. Fault avoidance techniques, such as radiation hardening, have been commonly used in space applications. However, these components are expensive, lag behind commercial components with regards to performance and do not provide 100% fault elimination. Without fault tolerant mechanisms, many of these faults can become errors at the application or system level, which in turn, can result in catastrophic failures. In this work we study the concepts of fault tolerance and dependability and extend these concepts providing our own definition of resilience. We analyse the physics of radiation-induced faults, the damage mechanisms of particles and the process that leads to computing failures. We provide extensive taxonomies of 1) existing fault tolerant techniques and of 2) the effects of radiation in state-of-the-art electronics, analysing and comparing their characteristics. We propose a detailed model of faults and provide a classification of the different types of faults at various levels. We introduce an algorithm of fault tolerance and define the system states and actions necessary to implement it. We introduce novel hardware and system software techniques that provide a more efficient combination of reliability, performance and power consumption than existing techniques. We propose a new element of the system called syndrome that is the core of a resilient architecture whose software and hardware can adapt to reliable and unreliable environments. We implement a software simulator and disassembler and introduce a testing framework in combination with ERA’s assembler and commercial hardware simulators

Electrical overstress and electrostatic discharge failure in silicon MOS devices

This thesis presents an experimental and theoretical investigation of electrical failure in MOS structures, with a particular emphasis on short-pulse and ESD failure. It begins with an extensive survey of MOS technology, its failure mechanisms and protection schemes. A program of experimental research on MOS breakdown is then reported, the results of which are used to develop a model of breakdown across a wide spectrum of time scales. This model, in which bulk-oxide electron trapping/emission plays a major role, prohibits the direct use of causal theory over short time-scales, invalidating earlier theories on the subject. The work is extended to ESD stress of both polarities. Negative polarity ESD breakdownis found to be primarily oxide-voltage activated, with no significant dependence on temperature of luminosity. Positive polarity breakdown depends on the rate of surface inversion, dictated by the Si avalanche threshold and/or the generation speed of light-induced carriers. An analytical model, based upon the above theory is developed to predict ESD breakdown over a wide range of conditions. The thesis ends with an experimental and theoretical investigation of the effects of ESD breakdown on device and circuit performance. Breakdown sites are modelled as resistive paths in the oxide, and their distorting effects upon transistor performance are studied. The degradation of a damaged transistor under working stress is observed, giving a deeper insight into the latent hazards of ESD damage

The 1992 4th NASA SERC Symposium on VLSI Design

Papers from the fourth annual NASA Symposium on VLSI Design, co-sponsored by the IEEE, are presented. Each year this symposium is organized by the NASA Space Engineering Research Center (SERC) at the University of Idaho and is held in conjunction with a quarterly meeting of the NASA Data System Technology Working Group (DSTWG). One task of the DSTWG is to develop new electronic technologies that will meet next generation electronic data system needs. The symposium provides insights into developments in VLSI and digital systems which can be used to increase data systems performance. The NASA SERC is proud to offer, at its fourth symposium on VLSI design, presentations by an outstanding set of individuals from national laboratories, the electronics industry, and universities. These speakers share insights into next generation advances that will serve as a basis for future VLSI design

On the nature and effect of power distribution noise in CMOS digital integrated circuits

The thesis reports on the development of a novel simulation method aimed at modelling power distribution noise generated in digital CMOS integrated circuits. The simulation method has resulted in new information concerning: 1. The magnitude and nature of the power distribution noise and its dependence on the performance and electrical characteristics of the packaged integrated circuit. Emphasis is laid on the effects of resistive, capacitative and inductive elements associated with the packaged circuit. 2. Power distribution noise associated with a generic systolic array circuit comprising 1,020,000 transistors, of which 510,000 are synchronously active. The circuit is configured as a linear array which, if fabricated using two-micron bulk CMOS technology, would be over eight centimetres long and three millimetres wide. In principle, the array will perform 1.5 x 10 to the power of 11 operations per second. 3. Power distribution noise associated with a non-array-based signal processor which, if fabricated in 2-micron bulk CMOS technology, would occupy 6.7 sq. cm. The circuit contains about 900,000 transistors, of which 600,000 are functional and about 300,000 are used for yield enhancement. The processor uses the RADIX-2 algorithm and is designed to achieve 2 x 10 to the power of 8 floating point operations per second. 4. The extent to which power distribution noise limits the level of integration and/ or performance of such circuits using standard and non-standard fabrication and packaging technology. 5. The extent to which the predicted power distribution noise levels affect circuit susceptibility to transient latch-up and electromigration. It concludes the nature of CMOS digital integrated circuit power distribution noise and recommends ways in which it may be minimised. It outlines an approach aimed at mechanising the developed simulation methodology so that the performance of power distribution networks may more routinely be assessed. Finally. it questions the long term suitability of mainly digital techniques for signal processing

Control unit for CubeSat

Cílem práce je návrh univerzální řídicí jednotky pro CubeSat založené na obvodu FPGA. Taková jednotka doposud nebyla komerčně dostupná a navržená jednotka má tak dobrý potenciál zaplnit příslušné místo na trhu komponent pro CubeSat. Celá jednotka je navržena z komerčně dostupných komponent. Návrh jednotky je proveden tak, aby umožnil její funkci ve vesmírném prostředí. Stav konfigurace FPGA je pravidelně kontrolován a v případě zjištěné chyby dochází automaticky k rekonfiguraci FPGA a návratu jednotky do výchozího stavu. Jednotka obsahuje sadu senzorů, které monitorují její stav a v případě potřeby je možné na základě jejich výstupů provést opatření z hlediska ochrany funkce jednotky. Dvě paměti MRAM umožňují uložení tovární a uživatelské konfigurace FPGA, mezi kterými dochází k automatickému přepnutí na základě korektnosti uživatelské konfigurace.The aim of the thesis is a design of a CubeSat control unit. Similar unit can not be found on the market and the proposed unit has a potential to fill the gap. The board is composed of commercial parts yet reliable in the space environment. Because of its benefits, an FPGA was selected as the core for the board. The FPGA is periodically checked for errors and reset to default state if an error is found. The unit has various sensors to monitor its condition and can do necessary measures. Two MRAMs allow store golden bitstream and upload new bitstream in flight and they are switched based on the proper operation.