203 research outputs found

    Power reduction of a 12-bit 40-MS/s pipeline ADC exploiting partial amplifier sharing

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    High performance analog-to-digital converters (ADC) are essential elements for the development of high performance image sensors. These circuits need a big number of ADCs to reach the required resolution at a specified speed. Moreover, nowadays power dissipation has become a key performance to be considered in analog designs, specially in those developed for portable devices. Design of such circuits is a challenging task which requires a combination of the most advanced digital circuit, the analog expertise knowledge and an iterative design. Amplifier sharing has been a commonly used technique to reduce power dissipation in pipelined ADCs. In this paper we present a partial amplifier sharing topology of a 12 bit pipeline ADC, developed in 0.35 mum CMOS process. Its performance is compared with a conventional amplifier scaling topology and with a fully amplifier sharing one.This work has been supported by Ministerio de Educación y Ciencia of Spain and the European Regional Development Fund of the European Commission (FEDER) under grant TIN2006-15460-C04-04

    Influence of the amplifier sharing tecnique in pipeline analog-to digital converters (ADCs)

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    Three 12 bit, 40 MS/s pipelined analog-to-digital-converters (ADCs) are developed in 0.35μm CMOS process with 3.3V single power supply. The proposed ADCs architectures study the influence of the amplifier sharing technique in the power consumption and the main performances in the pipeline ADCs. Simulations results with extracted netlists are provided and show that the amplifier sharing technique has potential to be used in the reduction of the power consumption.This work has been partially supported by Ministerio de Educación y Ciencia of Spain (TIN2006-15460-C04-04)

    Parametric analog signal amplification applied to nanoscale cmos wireless digital transceivers

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    Thesis presented in partial fulfillment of the requirements for the degree of Doctor of Philosophy in the subject of Electrical and Computer Engineering by the Universidade Nova de Lisboa,Faculdade de Ciências e TecnologiaSignal amplification is required in almost every analog electronic system. However noise is also present, thus imposing limits to the overall circuit performance, e.g., on the sensitivity of the radio transceiver. This drawback has triggered a major research on the field, which has been producing several solutions to achieve amplification with minimum added noise. During the Fifties, an interesting out of mainstream path was followed which was based on variable reactance instead of resistance based amplifiers. The principle of these parametric circuits permits to achieve low noise amplifiers since the controlled variations of pure reactance elements is intrinsically noiseless. The amplification is based on a mixing effect which enables energy transfer from an AC pump source to other related signal frequencies. While the first implementations of these type of amplifiers were already available at that time, the discrete-time version only became visible more recently. This discrete-time version is a promising technique since it is well adapted to the mainstream nanoscale CMOS technology. The technique itself is based on the principle of changing the surface potential of the MOS device while maintaining the transistor gate in a floating state. In order words, the voltage amplification is achieved by changing the capacitance value while maintaining the total charge unchanged during an amplification phase. Since a parametric amplifier is not intrinsically dependent on the transconductance of the MOS transistor, it does not directly suffer from the intrinsic transconductance MOS gain issues verified in nanoscale MOS technologies. As a consequence, open-loop and opamp free structures can further emerge with this additional contribution. This thesis is dedicated to the analysis of parametric amplification with special emphasis on the MOS discrete-time implementation. The use of the latter is supported on the presentation of several circuits where the MOS Parametric Amplifier cell is well suited: small gain amplifier, comparator, discrete-time mixer and filter, and ADC. Relatively to the latter, a high speed time-interleaved pipeline ADC prototype is implemented in a,standard 130 nm CMOS digital technology from United Microelectronics Corporation (UMC). The ADC is fully based on parametric MOS amplification which means that one could achieve a compact and MOS-only implementation. Furthermore, any high speed opamp has not been used in the signal path, being all the amplification steps implemented with open-loop parametric MOS amplifiers. To the author’s knowledge, this is first reported pipeline ADC that extensively used the parametric amplification concept.Fundação para a Ciência e Tecnologia through the projects SPEED, LEADER and IMPAC

    Amplifier Design for a Pipeline ADC in 90nm Technology

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    This paper explains the choices taken for the design of two full differential operational amplifiers. These op amp have been designed for the third and the fifth stage of a pipelined A/D Converter. It shows also the solutions found to reach high gain, wide bandwidth and short settling time, without degrading too much the output swing. First the operational amplifier specification are extracted starting from the ADC architecture, then the issues related to the sub-micrometrical design are analysed; the different structures tested are then presented and the motivation of the final topology choice are shown. It presents then the op amp schematic implementation, the simulation results and the layout with the 90nm TSMC design ki

    Design of a Low Voltage Class AB Variable Gain Amplifier (VGA)

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    A variable gain amplifier (VGA) is one of the most significant component in many applications such as analog to digital converter (ADC). In communication receiver, VGA is typically employed in a feedback loop to realize an automatic gain control (AGC), to provide constant signal power to baseband analog-to-digital converter (ADC) for unpredictable received signal strengths. Gain range, power consumption and bandwidth of ADC are strongly influenced by the performance of operational amplifier. VGA is the key element for amplifying process in ADC. However, current class AB VGA is experiencing the limit of bandwidth, which is not suitable for high speed automatic gain control AGC. In order to overcome these limitations a high linearity and wide bandwidth of VGA is indispensable. The aim of this research is to get higher gain and larger bandwidth for VGA. In this research, a low cost, low power voltage and wide bandwidth class AB VGA is designed to mitigate this constraint. Superiority of the proposed VGA has been confirmed by circuit simulation using CEDEC 0.18-μm CMOS process with the help of tools from Mentor Graphics in designing a 100-MHz VGA under 1V supply voltage draining total static power consumption less than 125uW. The results show that the circuit is able to work with high linearity and wide bandwidth by varying Rf and Rs. Therefore, the frequency response (Gain) and the wide bandwidth of this class AB VGA is better than previously reported class AB VGA. Consequently, this modified class AB VGA is appropriate for high speed applications

    A Low Power Sigma-Delta Modulator with Hybrid Architecture

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    Analogue-to-digital converters (ADC) using oversampling technology and Σ-∆ modulation mechanism are widely applied in digital audio systems. This paper presents an audio modulator with high accuracy and low power consumption by using discrete second-order feedforward structure. A 5-bit SAR (Successive-approximation-register) quantizer is integrated into the chip, which reduces the number of comparators and the power consumption of the quantizer compared with Flash ADC type quantizers. An analogue passive adder is used to sum the input signals and it is embedded in a SAR ADC composed of capacitor array and a dynamic comparator which has no static power consumption. To validate the design concept, the designed modulator is developed in a 180 nm CMOS process. The peak SNDR (signal to noise distortion ratio) is calculated as 106 dB and the total power consumption of the chip is recorded as 3.654 mW at the chip supply voltage of 1.8 V. The input sine wave of 0 to 25 kHz is sampled at a sampling frequency of 3.2 Ms/s. Moreover, the results achieve 16-bit ENOB (effective number of bits) when the amplitude of the input signal is varied between 0.15 V to 1.65 V. By comparing with other modulators which were realized by 180nm CMOS process, the proposed architecture outperforms with lower power consumption

    Aika-digitaalimuunnin laajakaistaisiin aikapohjaisiin analogia-digitaalimuuntimiin

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    Modern deeply scaled semiconductor processes make the design of voltage-domain circuits increasingly challenging. On the contrary, the area and power consumption of digital circuits are improving with every new process node. Consequently, digital solutions are designed in place of their purely analog counterparts in applications such as analog-to-digital (A/D) conversion. Time-based analog-to-digital converters (ADC) employ digital-intensive architectures by processing analog quantities in time-domain. The quantization step of the time-based A/D-conversion is carried out by a time-to-digital converter (TDC). A free-running ring oscillator -based TDC design is presented for use in wideband time-based ADCs. The proposed architecture aims to maximize time resolution and full-scale range, and to achieve error resilient conversion performance with minimized power and area consumptions. The time resolution is maximized by employing a high-frequency multipath ring oscillator, and the full-scale range is extended using a high-speed gray counter. The error resilience is achieved by custom sense-amplifier -based sampling flip-flops, gray coded counter and a digital error correction algorithm for counter sampling error correction. The implemented design achieves up to 9-bit effective resolution at 250 MS/s with 4.3 milliwatt power consumption.Modernien puolijohdeteknologioiden skaalautumisen seurauksena jännitetason piirien suunnittelu tulee entistä haasteellisemmaksi. Toisaalta digitaalisten piirirakenteiden pinta-ala sekä tehonkulutus pienenevät prosessikehityksen myötä. Tästä syystä digitaalisia ratkaisuja suunnitellaan vastaavien puhtaasti analogisien rakenteiden tilalle. Analogia-digitaalimuunnos (A/D-muunnos) voidaan toteuttaa jännitetason sijaan aikatasossa käyttämällä aikapohjaisia A/D-muuntimia, jotka ovat rakenteeltaan pääosin digitaalisia. Kvantisointivaihe aikapohjaisessa A/D-muuntimessa toteutetaan aika-digitaalimuuntimella. Työ esittelee vapaasti oskilloivaan silmukkaoskillaattoriin perustuvan aika-digitaalimuuntimen, joka on suunniteltu käytettäväksi laajakaistaisessa aikapohjaisessa A/D-muuntimessa. Esitelty rakenne pyrkii maksimoimaan muuntimen aikaresoluution sekä muunnosalueen, sekä saavuttamaan virhesietoisen muunnostoiminnan minimoidulla tehon sekä pinta-alan kulutuksella. Aikaresoluutio on maksimoitu hyödyntämällä suuritaajuista monipolkuista silmukkaoskillaattoria, ja muunnosalue on maksimoitu nopealla Gray-koodi -laskuripiirillä. Muunnosprosessin virhesietoisuus on saavutettu toteuttamalla näytteistys herkillä kiikkuelementeillä, hyödyntämällä Gray-koodattua laskuria, sekä jälkiprosessoimalla laskurin näytteistetyt arvot virheenkorjausalgoritmilla. Esitelty muunnintoteutus saavuttaa 9 bitin efektiivisen resoluution 250 MS/s näytetaajuudella ja 4.3 milliwatin tehonkulutuksella

    A Ringamp-Assisted, Output Capacitor-less Analog CMOS Low-Dropout Voltage Regulator

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    Continued advancements in state-of-the-art integrated circuits have furthered trends toward higher computational performance and increased functionality within smaller circuit area footprints, all while improving power efficiencies to meet the demands of mobile and battery-powered applications. A significant portion of these advancements have been enabled by continued scaling of CMOS technology into smaller process node sizes, facilitating faster digital systems and power optimized computation. However, this scaling has degraded classic analog amplifying circuit structures with reduced voltage headroom and lower device output resistance; and thus, lower available intrinsic gain. This work investigates these trends and their impact for fine-grain Low-Dropout (LDO) Voltage Regulators, leading to a presented design methodology and implementation of a state-of-the-art Ringamp-Assisted, Output Capacitor-less Analog CMOS LDO Voltage Regulator capable of both power scaling and process node scaling for general SoC applications
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