Low jitter phase-locked loop clock synthesis with wide locking range

The fast growing demand of wireless and high speed data communications has driven efforts to increase the levels of integration in many communications applications. Phase noise and timing jitter are important design considerations for these communications applications. The desire for highly complex levels of integration using low cost CMOS technologies works against the minimization of timing jitter and phase noise for communications systems which employ a phase-locked loop for frequency and clock synthesis with on-chip VCO. This dictates an integrated CMOS implementation of the VCO with very low phase noise performance. The ring oscillator VCOs based on differential delay cell chains have been used successfully in communications applications, but thermal noise induced phase noise have to be minimized in order not to limit their applicability to some applications which impose stringent timing jitter and phase noise requirements on the PLL clock synthesizer. Obtaining lower timing jitter and phase noise at the PLL output also requires the minimization of noise in critical circuit design blocks as well as the optimization of the loop bandwidth of the PLL. In this dissertation the fundamental performance limits of CMOS PLL clock synthesizers based on ring oscillator VCOs are investigated. The effect of flicker and thermal noise in MOS transistors on timing jitter and phase noise are explored, with particular emphasis on source coupled NMOS differential delay cells with symmetric load elements. Several new circuit architectures are employed for the charge pump circuit and phase-frequency detector (PFD) to minimize the timing jitter due to the finite dead zone in the PFD and the current mismatch in the charge pump circuit. The selection of the optimum PLL loop bandwidth is critical in determining the phase noise performance at the PLL output. The optimum loop bandwidth and the phase noise performance of the PLL is determined using behavioral simulations. These results are compared with transistor level simulated results and experimental results for the PLL clock synthesizer fabricated in a 0.35 µm CMOS technology with good agreement. To demonstrate the proposed concept, a fully integrated CMOS PLL clock synthesizer utilizing integer-N frequency multiplier technique to synthesize several clock signals in the range of 20-400 MHz with low phase noise was designed. Implemented in a standard 0.35-µm N-well CMOS process technology, the PLL achieves a period jitter of 6.5-ps (rms) and 38-ps (peak-to-peak) at 216 MHz with a phase noise of -120 dBc/Hz at frequency offsets above 10 KHz. The specific research contributions of this work include (1) proposing, designing, and implementing a new charge pump circuit architecture that matches current levels and therefore minimizes one source of phase noise due to fluctuations in the control voltage of the VCO, (2) an improved phase-frequency detector architecture which has improved characteristics in lock condition, (3) an improved ring oscillator VCO with excellent thermal noise induced phase noise characteristics, (4) the application of selfbiased techniques together with fixed bias to CMOS low phase noise PLL clock synthesizer for digital video communications ,and (5) an analytical model that describes the phase noise performance of the proposed VCO and PLL clock synthesizer

Analysis and simulation methods for free-running, injection-locked and super-regenerative oscillators

RESUMEN: En los últimos años, muchos esfuerzos han sido dedicados al desarrollo de técnicas complementarias para el análisis de circuitos autónomos de microondas. Estas técnicas están pensadas para su uso en combinación con balance armónico, ampliamente usado para el análisis a frecuencias de microondas. De hecho, balance armónico sufre de restricciones cuando se utiliza para el análisis de circuitos autónomos, en su mayoría debidos a su falta de sensibilidad a las propiedades de estabilidad de la solución que se genera o se extingue mediante bifurcaciones. En esta tesis doctoral se presentan nuevos métodos de simulación y análisis para la caracterización y modelado de osciladores libres, sincronizados y superregenerativos. Todos los resultados obtenidos mediante los nuevos métodos de simulación y análisis han sido comparados satisfactoriamente con otras técnicas de simulación y con medidas.ABSTRACT: In the last years, numerous efforts have been devoted to the development of complementary analysis tools for autonomous microwave circuits. They are intended to be applied in combination with the harmonic-balance (HB) method, widely used at microwave frequencies. In fact, HB suffers from a number of shortcomings when dealing with autonomous circuits, mostly due the fact that it is insensitive to the stability properties of the solution, generated and extinguished through bifurcation phenomena. Here, new simulation and analysis methodologies for the characterization and modeling of free-running, injection-locked and super-regenerative oscillators have been proposed to overcome these problems when using commercial software. Results from the different new analysis methodologies have been successfully compared with independent simulations and with measurements

Phase Noise Analyses and Measurements in the Hybrid Memristor-CMOS Phase-Locked Loop Design and Devices Beyond Bulk CMOS

Phase-locked loop (PLLs) has been widely used in analog or mixed-signal integrated circuits. Since there is an increasing market for low noise and high speed devices, PLLs are being employed in communications. In this dissertation, we investigated phase noise, tuning range, jitter, and power performances in different architectures of PLL designs. More energy efficient devices such as memristor, graphene, transition metal di-chalcogenide (TMDC) materials and their respective transistors are introduced in the design phase-locked loop. Subsequently, we modeled phase noise of a CMOS phase-locked loop from the superposition of noises from its building blocks which comprises of a voltage-controlled oscillator, loop filter, frequency divider, phase-frequency detector, and the auxiliary input reference clock. Similarly, a linear time-invariant model that has additive noise sources in frequency domain is used to analyze the phase noise. The modeled phase noise results are further compared with the corresponding phase-locked loop designs in different n-well CMOS processes. With the scaling of CMOS technology and the increase of the electrical field, the problem of short channel effects (SCE) has become dominant, which causes decay in subthreshold slope (SS) and positive and negative shifts in the threshold voltages of nMOS and pMOS transistors, respectively. Various devices are proposed to continue extending Moore\u27s law and the roadmap in semiconductor industry. We employed tunnel field effect transistor owing to its better performance in terms of SS, leakage current, power consumption etc. Applying an appropriate bias voltage to the gate-source region of TFET causes the valence band to align with the conduction band and injecting the charge carriers. Similarly, under reverse bias, the two bands are misaligned and there is no injection of carriers. We implemented graphene TFET and MoS2 in PLL design and the results show improvements in phase noise, jitter, tuning range, and frequency of operation. In addition, the power consumption is greatly reduced due to the low supply voltage of tunnel field effect transistor

저 잡음 디지털 위상동기루프의 합성

학위논문 (박사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2014. 2. 정덕균.As a device scaling proceeds, Charge Pump PLL has been confronted by many design challenges. Especially, a leakage current in loop filter and reduced dynamic range due to a lower operating voltage make it difficult to adopt a conventional analog PLL architecture for a highly scaled technology. To solve these issues, All Digital PLL (ADPLL) has been widely studied recently. ADPLL mitigates a filter leakage and a reduced dynamic range issues by replacing the analog circuits with digital ones. However, it is still difficult to get a low jitter under low supply voltage. In this thesis, we propose a dual loop architecture to achieve a low jitter even with a low supply voltage. And bottom-up based multi-step TDC and DCO are proposed to meet both fine resolution and wide operation range. In the aspect of design methodology, ADPLL has relied on a full custom design method although ADPLL is fully described in HDL (Hardware Description Language). We propose a new cell based layout technique to automatically synthesize the whole circuit and layout. The test chip has no linearity degradation although it is fully synthesized using a commercially available auto P&R tool. We has implemented an all digital pixel clock generator using the proposed dual loop architecture and the cell based layout technique. The entire circuit is automatically synthesized using 28nm CMOS technology. And s-domain linear model is utilized to optimize the jitter of the dual-loop PLL. Test chip occupies 0.032mm2, and achieves a 15ps_rms integrated jitter although it has extremely low input reference clock of 100 kHz. The whole circuit operates at 1.0V and consumes only 3.1mW.Abstract i Lists of Figures vii Lists of Tables xiii 1. Introduction 1 1.1 Thesis Motivation and Organization 1 1.1.1 Motivation 1 1.1.2 Thesis Organization 2 1.2 PLL Design Issues in Scaled CMOS Technology 3 1.2.1 Low Supply Voltage 4 1.2.2 High Leakage Current 6 1.2.3 Device Reliability: NBTI, HCI, TDDB, EM 8 1.2.4 Mismatch due to Proximity Effects: WPE, STI 11 1.3 Overview of Clock Synthesizers 14 1.3.1 Dual Voltage Charge Pump PLL 14 1.3.2 DLL Based Edge Combining Clock Multiplier 16 1.3.3 Recirculation DLL 17 1.3.4 Reference Injected PLL 18 1.3.5 All Digital PLL 19 1.3.6 Flying Adder Clock Synthesizer 20 1.3.7 Dual Loop Hybrid PLL 21 1.3.8 Comparisons 23 2. Tutorial of ADPLL Design 25 2.1 Introduction 25 2.1.1 Motivation for a pure digital 25 2.1.2 Conversion to digital domain 26 2.2 Functional Blocks 26 2.2.1 TDC, and PFD/Charge Pump 26 2.2.2 Digital Loop Filter and Analog R/C Loop Filter 29 2.2.3 DCO and VCO 34 2.2.4 S-domain Model of the Whole Loop 34 2.2.5 ADPLL Loop Design Flow 36 2.3 S-domain Noise Model 41 2.3.1 Noise Transfer Functions 41 2.3.2 Quantization Noise due to Limited TDC Resolution 45 2.3.3 Quantization Noise due to Divider ΔΣ Noise 46 2.3.4 Quantization Noise due to Limited DCO Resolution 47 2.3.5 Quantization Noise due to DCO ΔΣ Dithering 48 2.3.6 Random Noise of DCO and Input Clock 50 2.3.7 Over-all Phase Noise 50 3. Synthesizable All Digital Pixel Clock PLL Design 53 3.1 Overview 53 3.1.1 Introduction of Pixel Clock PLL 53 3.1.1 Design Specifications 55 3.2 Proposed Architecture 60 3.2.1 All Digital Dual Loop PLL 60 3.2.2 2-step controlled TDC 61 3.2.3 3-step controlled DCO 64 3.2.4 Digital Loop Filter 76 3.3 S-domain Noise Model 78 3.4 Loop Parameter Optimization Based on the s-domain Model 85 3.5 RTL and Gate Level Circuit Design 88 3.5.1 Overview of the design flow 88 3.5.2 Behavioral Simulation and Gate level synthesis 89 3.5.1 Preventing a meta-stability 90 3.5.1 Reusable Coding Style 92 3.6 Layout Synthesis 94 3.6.1 Auto P&R 94 3.6.2 Design of Unit Cells 97 3.6.3 Linearity Degradation in Synthesized TDC 98 3.6.4 Linearity Degradation in Synthesized DCO 106 3.7 Experiment Results 109 3.7.1 DCO measurement 109 3.7.2 PLL measurement 113 3.8 Conclusions 117 A. Device Technology Scaling Trends 118 A.1. Motivation for Technology Scaling 118 A.2. Constant Field Scaling 120 A.3. Quasi Constant Voltage Scaling 123 A.4. Device Technology Trends in Real World 124 B. Spice Simulation Tip for a DCO 137 C. Phase Noise to Jitter Conversion 141 Bibliography 144 초록 151Docto

Design of a clock and data recovery circuit in 65 nm technology

As semiconductor fabrication technology develops, the demand for higher transmission data rates constantly increases; thus there is an urgent need for a power-efficient, robust and broad bandwidth chip-to-chip communication method. A lot of work has been done to address this issue as researchers strive for more integrated inter-IC communication technology with CMOS. A high-speed serial link (HSSL) can help meet this goal. The clock and data recovery circuit (CDR) is a critical component of the HSSL. CDR is built on the receiver end of the link after proper equalization. Its purpose is to extract clock signal which is not transmitted from the driver end and to use the extracted clock signal to sample the incoming data stream with optimal timing. In this thesis, the working mechanism of the CDR is described. A CDR consists of a phase detector, a charge pump, a loop filter and a voltage-controlled oscillator. This thesis includes an overview of all the building blocks of a PLL-based CDR, derivation of the mathematical formulations of the negative feedback loop, and a report on closed loop behavioral modeling of the entire CDR and implemented CDR building blocks at transistor level with TSMC 65 nm technology PDK with a 6.4 Gbps data rate. Also, this thesis provides a detailed noise analysis of the CDR. Lastly, some future work and possible design improvements are proposed

Low jitter design techniques for monolithic CMOS phase-locked and delay-locked systems

Timing jitter is a major concern in almost every type of communication system. Yet the desire for high levels of integration works against minimization of this error, especially for systems employing a phase-locked loop (PLL) or delay-locked loop (DLL) for timing generation or timing recovery. There has been an increasing demand for fully-monolithic CMOS PLL and DLL designs with good jitter performance. In this thesis, the system level as well as the transistor level low jitter design techniques for integrated PLLs and DLLs have been explored.;On the system level, a rigorous jitter analysis method based on a z-domain model is developed, in which the jitter is treated as a random event. Combined with statistical methods, the rms value of the accumulated jitter can be expressed with a closed form solution that successfully ties the jitter performance with loop parameters. Based on this analysis, a cascaded PLL/DLL structure is proposed which combines the advantage of both loops. The resulting system is able to perform frequency synthesis with the jitter as low as that of a DLL.;As an efficient tool to predict the jitter performance of a PLL or DLL system, a new nonlinear behavioral simulator is developed based on a novel behavioral modeling of the VCO and delay-line. Compared with prior art, this simulator not only simplifies the computation but also enables the noise simulation. Both jitter performance during tracking and lock condition can be predicted. This is also the first reported top-level simulation tool for DLL noise simulation.;On the transistor level, three prototype chips for different applications were implemented and tested. The first two chips are the application of PLL in Gigabit fibre channel transceivers. High speed circuit blocks that have good noise immunity are the major design concern. Testing results show that both designs have met the specifications with low power dissipation. For the third chip, an adaptive on-chip dynamic skew calibration technique is proposed to realize a precise delay multi-phase clock generator, which is a topic that has not been addressed in previous work thus far. Experimental results strongly support the effectiveness of the calibration scheme. At the same time, this design achieves by far the best reported jitter performance

Design of a clock and data recovery circuit in 65 nm technology

As semiconductor fabrication technology develops, the demand for higher transmission data rates constantly increases; thus there is an urgent need for a power-efficient, robust and broad bandwidth chip-to-chip communication method. A lot of work has been done to address this issue as researchers strive for more integrated inter-IC communication technology with CMOS. A high-speed serial link (HSSL) can help meet this goal. The clock and data recovery circuit (CDR) is a critical component of the HSSL. CDR is built on the receiver end of the link after proper equalization. Its purpose is to extract clock signal which is not transmitted from the driver end and to use the extracted clock signal to sample the incoming data stream with optimal timing. In this thesis, the working mechanism of the CDR is described. A CDR consists of a phase detector, a charge pump, a loop filter and a voltage-controlled oscillator. This thesis includes an overview of all the building blocks of a PLL-based CDR, derivation of the mathematical formulations of the negative feedback loop, and a report on closed loop behavioral modeling of the entire CDR and implemented CDR building blocks at transistor level with TSMC 65 nm technology PDK with a 6.4 Gbps data rate. Also, this thesis provides a detailed noise analysis of the CDR. Lastly, some future work and possible design improvements are proposed

High-Bandwidth Voltage-Controlled Oscillator based architectures for Analog-to-Digital Conversion

The purpose of this thesis is the proposal and implementation of data conversion open-loop architectures based on voltage-controlled oscillators (VCOs) built with ring oscillators (RO-based ADCs), suitable for highly digital designs, scalable to the newest complementary metal-oxide-semiconductor (CMOS) nodes. The scaling of the design technologies into the nanometer range imposes the reduction of the supply voltage towards small and power-efficient architectures, leading to lower voltage overhead of the transistors. Additionally, phenomena like a lower intrinsic gain, inherent noise, and parasitic effects (mismatch between devices and PVT variations) make the design of classic structures for ADCs more challenging. In recent years, time-encoded A/D conversion has gained relevant popularity due to the possibility of being implemented with mostly digital structures. Within this trend, VCOs designed with ring oscillator based topologies have emerged as promising candidates for the conception of new digitization techniques. RO-based data converters show excellent scalability and sensitivity, apart from some other desirable properties, such as inherent quantization noise shaping and implicit anti-aliasing filtering. However, their nonlinearity and the limited time delay achievable in a simple NOT gate drastically limits the resolution of the converter, especially if we focus on wide-band A/D conversion. This thesis proposes new ways to alleviate these issues. Firstly, circuit-based techniques to compensate for the nonlinearity of the ring oscillator are proposed and compared to equivalent state-of-the-art solutions. The proposals are designed and simulated in a 65-nm CMOS node for open-loop RO-based ADC architectures. One of the techniques is also validated experimentally through a prototype. Secondly, new ways to artificially increase the effective oscillation frequency are introduced and validated by simulations. Finally, new approaches to shape the quantization noise and filter the output spectrum of a RO-based ADC are proposed theoretically. In particular, a quadrature RO-based band-pass ADC and a power-efficient Nyquist A/D converter are proposed and validated by simulations. All the techniques proposed in this work are especially devoted for highbandwidth applications, such as Internet-of-Things (IoT) nodes or maximally digital radio receivers. Nevertheless, their field of application is not restricted to them, and could be extended to others like biomedical instrumentation or sensing.El propósito de esta tesis doctoral es la propuesta y la implementación de arquitecturas de conversión de datos basadas en osciladores en anillos, compatibles con diseños mayoritariamente digitales, escalables en los procesos CMOS de fabricación más modernos donde las estructuras digitales se ven favorecidas. La miniaturización de las tecnologías CMOS de diseño lleva consigo la reducción de la tensión de alimentación para el desarrollo de arquitecturas pequeñas y eficientes en potencia. Esto reduce significativamente la disponibilidad de tensión para saturar transistores, lo que añadido a una ganancia cada vez menor de los mismos, ruido y efectos parásitos como el “mismatch” y las variaciones de proceso, tensión y temperatura han llevado a que sea cada vez más complejo el diseño de estructuras analógicas eficientes. Durante los últimos años la conversión A/D basada en codificación temporal ha ganado gran popularidad dado que permite la implementación de estructuras mayoritariamente digitales. Como parte de esta evolución, los osciladores controlados por tensión diseñados con topologías de oscilador en anillo han surgido como un candidato prometedor para la concepción de nuevas técnicas de digitalización. Los convertidores de datos basados en osciladores en anillo son extremadamente sensibles (variación de frecuencia con respecto a la señal de entrada) así como escalables, además de otras propiedades muy atractivas, como el conformado espectral de ruido de cuantificación y el filtrado “anti-aliasing”. Sin embargo, su respuesta no lineal y el limitado tiempo de retraso alcanzable por una compuerta NOT restringen la resolución del conversor, especialmente para conversión A/D en aplicaciones de elevado ancho de banda. Esta tesis doctoral propone nuevas técnicas para aliviar este tipo de problemas. En primer lugar, se proponen técnicas basadas en circuito para compensar el efecto de la no linealidad en los osciladores en anillo, y se comparan con soluciones equivalentes ya publicadas. Las propuestas se diseñan y simulan en tecnología CMOS de 65 nm para arquitecturas en lazo abierto. Una de estas técnicas presentadas es también validada experimentalmente a través de un prototipo. En segundo lugar, se introducen y validan por simulación varias formas de incrementar artificialmente la frecuencia de oscilación efectiva. Para finalizar, se proponen teóricamente dos enfoques para configurar nuevas formas de conformación del ruido de cuantificación y filtrado del espectro de salida de los datos digitales. En particular, son propuestos y validados por simulación un ADC pasobanda en cuadratura de fase y un ADC de Nyquist de gran eficiencia en potencia. Todas las técnicas propuestas en este trabajo están destinadas especialmente para aplicaciones de alto ancho de banda, tales como módulos para el Internet de las cosas o receptores de radiofrecuencia mayoritariamente digitales. A pesar de ello, son extrapolables también a otros campos como el de la instrumentación biomédica o el de la medición de señales mediante sensores.Programa de Doctorado en Ingeniería Eléctrica, Electrónica y Automática por la Universidad Carlos III de MadridPresidente: Juan Pablo Alegre Pérez.- Secretario: Celia López Ongil.- Vocal: Fernando Cardes Garcí

Analysis of the high frequency substrate noise effects on LC-VCOs

La integració de transceptors per comunicacions de radiofreqüència en CMOS pot quedar seriosament limitada per la interacció entre els seus blocs, arribant a desaconsellar la utilització de un únic dau de silici. El soroll d’alta freqüència generat per certs blocs, com l’amplificador de potencia, pot viatjar pel substrat i amenaçar el correcte funcionament de l’oscil·lador local. Trobem tres raons importants que mostren aquest risc d’interacció entre blocs i que justifiquen la necessitat d’un estudi profund per minimitzar-lo. Les característiques del substrat fan que el soroll d’alta freqüència es propagui m’és fàcilment que el de baixa freqüència. Per altra banda, les estructures de protecció perden eficiència a mesura que la freqüència augmenta. Finalment, el soroll d’alta freqüència que arriba a l’oscil·lador degrada al seu correcte comportament. El propòsit d’aquesta tesis és analitzar en profunditat la interacció entre el soroll d’alta freqüència que es propaga pel substrat i l’oscil·lador amb l’objectiu de poder predir, mitjançant un model, l’efecte que aquest soroll pot tenir sobre el correcte funcionament de l’oscil·lador. Es volen proporcionar diverses guies i normes a seguir que permeti als dissenyadors augmentar la robustesa dels oscil·ladors al soroll d’alta freqüència que viatja pel substrat. La investigació de l’efecte del soroll de substrat en oscil·ladors s’ha iniciat des d’un punt de vista empíric, per una banda, analitzant la propagació de senyals a través del substrat i avaluant l’eficiència d’estructures per bloquejar aquesta propagació, i per altra, determinant l’efecte d’un to present en el substrat en un oscil·lador. Aquesta investigació ha mostrat que la injecció d’un to d’alta freqüència en el substrat es pot propagar fins arribar a l’oscil·lador i que, a causa del ’pulling’ de freqüència, pot modular en freqüència la sortida de l’oscil·lador. A partir dels resultats de l’anàlisi empíric s’ha aportat un model matemàtic que permet predir l’efecte del soroll en l’oscil·lador. Aquest model té el principal avantatge en el fet de que està basat en paràmetres físics de l’oscil·lador o del soroll, permetent determinar les mesures que un dissenyador pot prendre per augmentar la robustesa de l’oscil·lador així com les conseqüències que aquestes mesures tenen sobre el seu funcionament global (trade-offs). El model ha estat comparat tant amb simulacions com amb mesures reals demostrant ser molt precís a l’hora de predir l’efecte del soroll de substrat. La utilitat del model com a eina de disseny s’ha demostrat en dos estudis. Primerament, les conclusions del model han estat aplicades en el procés de disseny d’un oscil·lador d’ultra baix consum a 2.5GHz, aconseguint un oscil·lador robust al soroll de substrat d’alta freqüència i amb característiques totalment compatibles amb els principals estàndards de comunicació en aquesta banda. Finalment, el model s’ha utilitzat com a eina d’anàlisi per avaluar la causa de les diferències, en termes de robustesa a soroll de substrat, mesurades en dos oscil·ladors a 60GHz amb dues diferents estratègies d’apantallament de l’inductor del tanc de ressonant, flotant en un cas i connectat a terra en l’altre. El model ha mostrat que les diferències en robustesa són causades per la millora en el factor de qualitat i en l’amplitud d’oscil·lació i no per un augment en l’aïllament entre tanc i substrat. Per altra banda, el model ha demostrat ser vàlid i molt precís inclús en aquest rang de freqüència tan extrem. el principal avantatge en el fet de que està basat en paràmetres físics de l’oscil·lador o del soroll, permetent determinar les mesures que un dissenyador pot prendre per augmentar la robustesa de l’oscil·lador així com les conseqüències que aquestes mesures tenen sobre el seu funcionament global (trade-offs). El model ha estat comparat tant amb simulacions com amb mesures reals demostrant ser molt precís a l’hora de predir l’efecte del soroll de substrat. La utilitat del model com a eina de disseny s’ha demostrat en dos estudis. Primerament, les conclusions del model han estat aplicades en el procés de disseny d’un oscil·lador d’ultra baix consum a 2.5GHz, aconseguint un oscil·lador robust al soroll de substrat d’alta freqüència i amb característiques totalment compatibles amb els principals estàndards de comunicació en aquesta banda. Finalment, el model s’ha utilitzat com a eina d’anàlisi per avaluar la causa de les diferències, en termes de robustesa a soroll de substrat, mesurades en dos oscil·ladors a 60GHz amb dues diferents estratègies d’apantallament de l’inductor del tanc de ressonant, flotant en un cas i connectat a terra en l’altre. El model ha mostrat que les diferències en robustesa són causades per la millora en el factor de qualitat i en l’amplitud d’oscil·lació i no per un augment en l’aïllament entre tanc i substrat. Per altra banda, el model ha demostrat ser vàlid i molt precís inclús en aquest rang de freqüència tan extrem.The integration of transceivers for RF communication in CMOS can be seriously limited by the interaction between their blocks, even advising against using a single silicon die. The high frequency noise generated by some of the blocks, like the power amplifier, can travel through the substrate, reaching the local oscillator and threatening its correct performance. Three important reasons can be stated that show the risk of the single die integration. Noise propagation is easier the higher the frequency. Moreover, the protection structures lose efficiency as the noise frequency increases. Finally, the high frequency noise that reaches the local oscillator degrades its performance. The purpose of this thesis is to deeply analyze the interaction between the high frequency substrate noise and the oscillator with the objective of being able to predict, thanks to a model, the effect that this noise may have over the correct behavior of the oscillator. We want to provide some guidelines to the designers to allow them to increase the robustness of the oscillator to high frequency substrate noise. The investigation of the effect of the high frequency substrate noise on oscillators has started from an empirical point of view, on one hand, analyzing the noise propagation through the substrate and evaluating the efficiency of some structures to block this propagation, and on the other hand, determining the effect on an oscillator of a high frequency noise tone present in the substrate. This investigation has shown that the injection of a high frequency tone in the substrate can reach the oscillator and, due to a frequency pulling effect, it can modulate in frequency the output of the oscillator. Based on the results obtained during the empirical analysis, a mathematical model to predict the effect of the substrate noise on the oscillator has been provided. The main advantage of this model is the fact that it is based on physical parameters of the oscillator and of the noise, allowing to determine the measures that a designer can take to increase the robustness of the oscillator as well as the consequences (trade-offs) that these measures have over its global performance. This model has been compared against both, simulations and real measurements, showing a very high accuracy to predict the effect of the high frequency substrate noise. The usefulness of the presented model as a design tool has been demonstrated in two case studies. Firstly, the conclusions obtained from the model have been applied in the design of an ultra low power consumption 2.5 GHz oscillator robust to the high frequency substrate noise with characteristics which make it compatible with the main communication standards in this frequency band. Finally, the model has been used as an analysis tool to evaluate the cause of the differences, in terms of performance degradation due to substrate noise, measured in two 60 GHz oscillators with two different tank inductor shielding strategies, floating and grounded. The model has determined that the robustness differences are caused by the improvement in the tank quality factor and in the oscillation amplitude and no by an increased isolation between the tank and the substrate. The model has shown to be valid and very accurate even in these extreme frequency range.Postprint (published version

Wideband Low Noise Oscillator suitable for Injection Locking

There is a growing need to design compact and low power transceiver circuits. The increasingly crowded frequency spectrum leads to increased challenges associated with transceiver design. In particular, it becomes imperative that the oscillator circuits have a low phase noise. RC oscillators have the ability to produce wideband oscillations with reduced area and low power consumption. However, a serious drawback is its high phase noise, which leads to poor circuit performance. To improve the performance of an RC oscillator, it is common for it to be integrated into a frequency synthesizer. The most common approach of a synthesizer is the Phase- Locked Loop (PLL). This approach leads to an increase in the area and complexity of the circuit. Another approach to a synthesizer is an Injection-Locked Oscillator (ILO), which achieves similar performances to a PLL without the disadvantages referred to above. In this thesis, an ILO based on an RC oscillator, using a Spin Torque Oscillator (STO) as a reference generator, is presented. The circuit is implemented in two different Complementary Metal-Oxide-Semiconductor (CMOS) technologies: 130 nm CMOS and 180 nm CMOS. The STO used as reference has characteristics similar to a nanometric device developed at the International Iberian Nanotechnology Laboratory (INL). In addition, the ILO operates in a wide frequency band ranging from 100 MHz to 3 GHz, has a power consumption ranging from 2.94 mW to 6.81 mW for 130 nm CMOS technology, whereas in 180nm CMOS technology it consumes between 4.86 mW and 13.96 mW. Thus, the work developed in the course of this thesis serves as proof of concept for the manufacture of a fully integrated hybrid ILO using the STO technology in conjunction with CMOS circuits