213 research outputs found
A Column-parallel Single-Slope ADC with Signal-Dependent Multiple Sampling Technique for CMOS Image Sensor
Department of Electrical EngineeringBoth Charge-Coupled Device (CCD) and Complementary Metal-Oxide Semiconductor (CMOS) image sensor have same starting point ??? they convert light photons into electrons. Recently, CMOS image sensor (CIS) has been developed significantly. CIS is much less expensive to manufacture than CCD sensor. Also, CIS has advantages over high speed, low noise and low power consumption. Therefore, such features can be used for many applications.
In general, CIS has the number of incoming photons dependent noise characteristics. In the bright condition, photon shot noise is dominant in CIS compared with other noise sources. Photon shot noise cannot be reduced by circuit technique in single frame. However, CIS has high SNR in bright condition because the slope of the increase in signal is faster than the slope of increase in noise. But, in the dark condition, photon shot noise is not dominant in CIS. Random noises have dominance In CIS in the dark condition. These effects of noises can be reduced by circuit techniques. In the same way, Indirect Time-of-Flight (I-TOF) sensor has similar characteristics. When it measures long distance, its depth accuracy is reduced because of lack of incoming photons same as CIS in the dark condition. Therefore, same circuit technique can be used for pursuing beneficial effects on CIS and I- TOF sensor.
To increase SNR in CIS, imposing gain in correlated double sampling stage as pre-amplifier. Therefore, it can increase SNR and reducing effects of readout random noises. However, it cannot increase gain highly as we want because of saturation problem and large power consumption. Therefore, it is not an advantageous method of low power systems. Otherwise, the multiple sampling technique had been proposed. It averages out all of the readout random noises by sampling several times [7]. Therefore, noise power is reduced in the inverse of sampling number and in voltage domain, noise rms value is reduced in the inverse of square root of sampling number. However, sampling several times increases readout time which is proportional to sampling number significantly. Therefore, to alleviate trade-offs coming from multiple sampling, several approaches is developed in the past. Typical examples are signal-dependent multiple sampling technique, pseudo multiple sampling technique and conditional multiple sampling technique.
First, the pseudo multiple sampling technique decreases resolution of ADC for keeping conventional readout time [8]. Therefore, all of the pixels will be sampled several times, regardless of the value of those pixel values. Therefore, it has a limitation of effects of multiple sampling because of quantization noise due to large quantization step for achieving larger sampling number.
Second, the signal dependent multiple sampling technique has been proposed [9]. It changes its
8sampling number according to pixel values. However, this concept can be achieved after operation of conventional readout. Therefore, it at least doubles readout time compared with conventional one.
Finally, conditional multiple sampling technique has been proposed [10]. Similarly, the number of samplings is changed depending on the pixel value. However, it divides into two casesthe bright condition and the dark condition. Therefore, its boundary errors will be significant in output images.
The proposed ADC can achieve conserving readout time with using multiple ramp generators. Also, it can change the sampling number according to pixel values gradually without sacrificing resolution of ADC [12]. It is composed with column-level digital logic for ramp selection and ripple local counter then size problem is not critical problem. Therefore, it can reduce boundary errors through the sample counter of the intermediate level. With this concept, adjusting the number of ramp generators, depending on the application, it can take the appropriate sampling number and reduces the power consumption consideration. Therefore, proposed ADC is new concept of signal-dependent multiple sampling technique with several ramp generators without sacrificing ramp resolution and readout time.clos
Recommended from our members
Low-power ADC designs in scaled CMOS process
This thesis presents advanced design techniques for successive approximation register (SAR) analog-to-digital converters (ADCs), continuous-time âÎŁ ADCs, and single-slope (SS) ADCs in nano-scale CMOS technologies. (1) In high-speed SAR ADCs, metastability of the comparator limits the performance, which even results in the sparkle code errors. Proposed background calibration utilizing the comparator decision time detector removes the metastability-induced sparkle code errors by controlling the metastability detection window. At the same time, 1-bit resolution increase is gained from the proposed technique, which results in the fewer comparison cycles. Along with the relaxed requirement on the comparator, this cycle reduction helps to achieve the good power efficiency in high-speed SAR design. A prototype ADC in 40nm CMOS achieves 35.3dB SNDR and consumes 0.81mW while sampling at 700MS/s. (2) In the proposed continuous-time âÎŁ ADCs, conventional power-hungry opamp is replaced by voltage controlled oscillators (VCOs) that perform the data conversion in the phase domain instead of the voltage domain. In contrary to the opamp which is difficult to achieve good performance in the advanced CMOS process, VCOs have many advantages in the phase domain. To solve the nonlinear gain of VCOs, dual VCO-based integrator is used to suppress the dominant second-order distortion. To address the distortion from the DAC, a novel DAC calibration technique that both digitally senses and removes DAC mismatch errors is proposed. It has low hardware complexity by taking advantage of the intrinsic clocked level averaging (CLA) capability of dual-VCO-based integrator. It ensures high linearity regardless of the VCO center frequency. By lowering the VCO center frequency, power consumption is reduced. A prototype ADC designed in 130nm occupies an area of only 0.04mmÂČ . It achieves 71dB SNDR over 1.7MHz bandwidth (BW) while sampling at 250MS/s and consuming only 0.9mW from a 1.2V power supply. The corresponding figure-of-merit (FOM) is 98 fJ/conversion-step. (3) A SS ADC has advantages of high linearity and a simple architecture. Thus, it is well suited for the column-parallel architecture for the CMOS image sensors. However, conversion speed is severely limited in high-bit resolution since more than 2 [superscript N] cycles are required for a N-bit resolution. To tackle this limitation, a two-step approach becomes popular. In this thesis, a two-step SAR/SS architecture is presented. In addition to reducing the conversion time, analog correlated double sampling (CDS) can cancel kT/C noise, which enables capacitor area reduction. A prototype ADC in 180nm CMOS occupies only 9.3”m x 830”m. It achieves 60.5dB SNR after CDS while sampling at 256kHz and consuming 91”WElectrical and Computer Engineerin
Low Power Analog to Digital Converters in Advanced CMOS Technology Nodes
The dissertation presents system and circuit solutions to improve the power efficiency and address high-speed design issues of ADCs in advanced CMOS technologies.
For image sensor applications, a high-performance digitizer prototype based on column-parallel single-slope ADC (SS-ADC) topology for readout of a back-illuminated 3D-stacked CMOS image sensor is presented. To address the high power consumption issue in high-speed digital counters, a passing window (PW) based hybrid counter topology is proposed. To address the high column FPN under bright illumination conditions, a double auto-zeroing (AZ) scheme is proposed. The proposed techniques are experimentally verified in a prototype chip designed and fabricated in the TSMC 40 nm low-power CMOS process. The PW technique saves 52.8% of power consumption in the hybrid digital counters. Dark/bright column fixed pattern noise (FPN) of 0.0024%/0.028% is achieved employing the proposed double AZ technique for digital correlated double sampling (CDS). A single-column digitizer consumes total power of 66.8ΌW and occupies an area of 5.4 ”m x 610 ”m.
For mobile/wireless receiver applications, this dissertation presents a low-power wide-bandwidth multistage noise-shaping (MASH) continuous-time delta-sigma modulator (CT-ÎÎŁM) employing finite impulse response (FIR) digital-to-analog converters (DACs) and encoder-embedded loop-unrolling (EELU) quantizers. The proposed MASH 1-1-1 topology is a cascade of three single-loop first-order CT-ÎÎŁM stages, each of which consists of an active-RC integrator, a current-steering DAC, and an EELU quantizer. An FIR filter in the main 1.5-bit DAC improves the modulatorâs jitter sensitivity performance. FIRâs effect on the noise transfer function (NTF) of the modulator is compensated in the digital domain thanks to the MASH topology. Instead of employing a conventional analog direct feedback path, a 1.5-bit EELU quantizer based on multiplexing comparator outputs is proposed; this approach is suitable for highspeed operation together with power and area benefits. Fabricated in a 40-nm low-power CMOS technology, the modulatorâs prototype achieves a 67.3 dB of signal-to-noise and distortion ratio (SNDR), 68 dB of signal-to-noise ratio (SNR), and 68.2 dB of dynamic range (DR) within 50.5 MHz of bandwidth (BW), while consuming 19 mW of total power (P). The proposed modulator features 161.5 dB of figure-of-merit (FOM), defined as FOM = SNDR + 10 log10 (BW/P)
High Speed Camera Chip
abstract: The market for high speed camera chips, or image sensors, has experienced rapid growth over the past decades owing to its broad application space in security, biomedical equipment, and mobile devices. CMOS (complementary metal-oxide-semiconductor) technology has significantly improved the performance of the high speed camera chip by enabling the monolithic integration of pixel circuits and on-chip analog-to-digital conversion. However, for low light intensity applications, many CMOS image sensors have a sub-optimum dynamic range, particularly in high speed operation. Thus the requirements for a sensor to have a high frame rate and high fill factor is attracting more attention. Another drawback for the high speed camera chip is its high power demands due to its high operating frequency. Therefore, a CMOS image sensor with high frame rate, high fill factor, high voltage range and low power is difficult to realize.
This thesis presents the design of pixel circuit, the pixel array and column readout chain for a high speed camera chip. An integrated PN (positive-negative) junction photodiode and an accompanying ten transistor pixel circuit are implemented using a 0.18 ”m CMOS technology. Multiple methods are applied to minimize the subthreshold currents, which is critical for low light detection. A layout sharing technique is used to increase the fill factor to 64.63%. Four programmable gain amplifiers (PGAs) and 10-bit pipeline analog-to-digital converters (ADCs) are added to complete on-chip analog to digital conversion. The simulation results of extracted circuit indicate ENOB (effective number of bits) is greater than 8 bits with FoM (figures of merit) =0.789. The minimum detectable voltage level is determined to be 470ΌV based on noise analysis. The total power consumption of PGA and ADC is 8.2mW for each conversion. The whole camera chip reaches 10508 frames per second (fps) at full resolution with 3.1mm x 3.4mm area.Dissertation/ThesisMasters Thesis Electrical Engineering 201
Time interleaved counter analog to digital converters
The work explores extending time interleaving in A/D converters, by
applying a high-level of parallelism to one of the slowest and simplest types of
data-converters, the counter ADC. The motivation for the work is to realise
high-performance re-configurable A/D converters for use in multi-standard and
multi-PHY communication receivers with signal bandwidths in the 10s to 100s of
MHz. The counter ADC requires only a comparator, a ramp signal, and a
digital counter, where the comparator compares the sampled input against all
possible quantisation levels sequentially. This work explores arranging counter
ADCs in large time-interleaved arrays, building a Time Interleaved Counter
(TIC) ADC. The key to realising a TIC ADC is distributed sampling and a
global multi-phase ramp generator realised with a novel figure-of-8 rotating
resistor ring. Furthermore Counter ADCs allow for re-configurability between
effective sampling rate and resolution due to their sequential comparison of
reference levels in conversion. A prototype TIC ADC of 128-channels was
fabricated and measured in 0.13ÎŒm CMOS technology, where the same block can
be configured to operate as a 7-bit 1GS/s, 8-bit 500MS/s, or 9-bit 250MS/s dataconverter.
The ADC achieves a sub 400fJ/step FOM in all modes of
configuration
Low power CMOS vision sensor for foreground segmentation
This thesis focuses on the design of a top-ranked algorithm for background
subtraction, the Pixel Adaptive Based Segmenter (PBAS), for its mapping onto a CMOS vision sensor on the focal
plane processing. The redesign of PBAS into its hardware oriented version, HO-PBAS, has led to a less number of
memories per pixel, along with a simpler overall model, yet, resulting in an acceptable loss of accuracy with respect
to its counterpart on CPU. This thesis features two CMOS vision sensors. The first one, HOPBAS1K, has laid out a
24 x 56 pixel array onto a miniasic chip in standard 180 nm CMOS technology. The second one, HOPBAS10K,
features an array of 98 x 98 pixels in standard 180 nm CMOS technology too. The second chip fixes some issues
found in the first chip, and provides good hardware and background performance metrics
Ultra-low noise, high-frame rate readout design for a 3D-stacked CMOS image sensor
Due to the switch from CCD to CMOS technology, CMOS based image sensors have become
smaller, cheaper, faster, and have recently outclassed CCDs in terms of image quality. Apart
from the extensive set of applications requiring image sensors, the next technological
breakthrough in imaging would be to consolidate and completely shift the conventional CMOS
image sensor technology to the 3D-stacked technology. Stacking is recent and an innovative
technology in the imaging field, allowing multiple silicon tiers with different functions to be
stacked on top of each other. The technology allows for an extreme parallelism of the pixel
readout circuitry. Furthermore, the readout is placed underneath the pixel array on a 3D-stacked
image sensor, and the parallelism of the readout can remain constant at any spatial resolution of
the sensors, allowing extreme low noise and a high-frame rate (design) at virtually any sensor
array resolution.
The objective of this work is the design of ultra-low noise readout circuits meant for 3D-stacked
image sensors, structured with parallel readout circuitries. The readout circuitâs key
requirements are low noise, speed, low-area (for higher parallelism), and low power.
A CMOS imaging review is presented through a short historical background, followed by the
description of the motivation, the research goals, and the work contributions. The fundamentals
of CMOS image sensors are addressed, as a part of highlighting the typical image sensor features,
the essential building blocks, types of operation, as well as their physical characteristics and their
evaluation metrics. Following up on this, the document pays attention to the readout circuitâs
noise theory and the column converters theory, to identify possible pitfalls to obtain sub-electron
noise imagers. Lastly, the fabricated test CIS device performances are reported along with
conjectures and conclusions, ending this thesis with the 3D-stacked subject issues and the future
work. A part of the developed research work is located in the Appendices.Devido à mudança da tecnologia CCD para CMOS, os sensores de imagem em CMOS tornam se mais pequenos, mais baratos, mais råpidos, e mais recentemente, ultrapassaram os sensores
CCD no que respeita à qualidade de imagem. Para além do vasto conjunto de aplicaçÔes que
requerem sensores de imagem, o prĂłximo salto tecnolĂłgico no ramo dos sensores de imagem Ă©
o de mudar completamente da tecnologia de sensores de imagem CMOS convencional para a
tecnologia â3D-stackedâ. O empilhamento de chips Ă© relativamente recente e Ă© uma tecnologia
inovadora no campo dos sensores de imagem, permitindo vĂĄrios planos de silĂcio com diferentes
funçÔes poderem ser empilhados uns sobre os outros. Esta tecnologia permite portanto, um
paralelismo extremo na leitura dos sinais vindos da matriz de pĂxeis. AlĂ©m disso, num sensor de
imagem de planos de silĂcio empilhados, os circuitos de leitura estĂŁo posicionados debaixo da
matriz de pĂxeis, sendo que dessa forma, o paralelismo pode manter-se constante para qualquer
resolução espacial, permitindo assim atingir um extremo baixo ruĂdo e um alto debito de
imagens, virtualmente para qualquer resolução desejada.
O objetivo deste trabalho Ă© o de desenhar circuitos de leitura de coluna de muito baixo ruĂdo,
planeados para serem empregues em sensores de imagem â3D-stackedâ com estruturas
altamente paralelizadas. Os requisitos chave para os circuitos de leitura sĂŁo de baixo ruĂdo,
rapidez e pouca ĂĄrea utilizada, de forma a obter-se o melhor rĂĄcio.
Uma breve revisĂŁo histĂłrica dos sensores de imagem CMOS Ă© apresentada, seguida da
motivação, dos objetivos e das contribuiçÔes feitas. Os fundamentos dos sensores de imagem
CMOS sĂŁo tambĂ©m abordados para expor as suas caracterĂsticas, os blocos essenciais, os tipos
de operação, assim como as suas caracterĂsticas fĂsicas e suas mĂ©tricas de avaliação. No
seguimento disto, especial atenção Ă© dada Ă teoria subjacente ao ruĂdo inerente dos circuitos de
leitura e dos conversores de coluna, servindo para identificar os possĂveis aspetos que dificultem
atingir a tĂŁo desejada performance de muito baixo ruĂdo. Por fim, os resultados experimentais
do sensor desenvolvido sĂŁo apresentados junto com possĂveis conjeturas e respetivas conclusĂ”es,
terminando o documento com o assunto de empilhamento vertical de camadas de silĂcio, junto
com o possĂvel trabalho futuro
CMOS-3D smart imager architectures for feature detection
This paper reports a multi-layered smart image sensor architecture for feature extraction based on detection of interest points. The architecture is conceived for 3-D integrated circuit technologies consisting of two layers (tiers) plus memory. The top tier includes sensing and processing circuitry aimed to perform Gaussian filtering and generate Gaussian pyramids in fully concurrent way. The circuitry in this tier operates in mixed-signal domain. It embeds in-pixel correlated double sampling, a switched-capacitor network for Gaussian pyramid generation, analog memories and a comparator for in-pixel analog-to-digital conversion. This tier can be further split into two for improved resolution; one containing the sensors and another containing a capacitor per sensor plus the mixed-signal processing circuitry. Regarding the bottom tier, it embeds digital circuitry entitled for the calculation of Harris, Hessian, and difference-of-Gaussian detectors. The overall system can hence be configured by the user to detect interest points by using the algorithm out of these three better suited to practical applications. The paper describes the different kind of algorithms featured and the circuitry employed at top and bottom tiers. The Gaussian pyramid is implemented with a switched-capacitor network in less than 50 ÎŒs, outperforming more conventional solutions.Xunta de Galicia 10PXIB206037PRMinisterio de Ciencia e InnovaciĂłn TEC2009-12686, IPT-2011-1625-430000Office of Naval Research N00014111031
- âŠ