218 research outputs found

    A sigma-delta interface built-in self-test and calibration for microelectromechanical system accelerometer's utilizing interpolation method

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    This work presents the capacitive micromechanical accelerometer with a completely differential high-order switched capacitor sigma-delta modulator interface. Such modulation interface circuit generates one-bit output data using a third sigma-delta modulator low-noise front-end, doing away with the requirement for a second enhanced converter of resolution to encode the feedback route analog signal. A capacitive micromechanical sensor unit with just a greater quality factor has been specifically employed to give greater resolution. The closed-loop and electrical correction control are used to dampen the high-Q values to get the system's stability with high-order. This microelectromechanical system (MEMS) capacitive accelerometer was calibrated using a lookup table and Akima interpolation to find manufacturing flaws by recalculating voltage levels for the test electrodes. To determine the proper electrode voltages for fault compensation, COMSOL software simulates a number of defects upon that spring as well as the fingers of the sensor system. When it comes time for the feedback phase of a proof mass displacement correction, these values are subsequently placed in the lookup table

    A closed-loop digitally controlled MEMS gyroscope with unconstrained Sigma-Delta force-feedback

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    In this paper, we describe the system architecture and prototype measurements of a MEMS gyroscope system with a resolution of 0.025 degrees/s/root Hz. The architecture makes extensive use of control loops, which are mostly in the digital domain. For the primary mode both the amplitude and the resonance frequency are tracked and controlled. The secondary mode readout is based on unconstrained Sigma Delta force-feedback, which does not require a compensation filter in the loop and thus allows more beneficial quantization noise shaping than prior designs of the same order. Due to the force-feedback, the gyroscope has ample dynamic range to correct the quadrature error in the digital domain. The largely digital setup also gives a lot of flexibility in characterization and testing, where system identification techniques have been used to characterize the sensors. This way, a parasitic direct electrical coupling between actuation and readout of the mass-spring systems was estimated and corrected in the digital domain. Special care is also given to the capacitive readout circuit, which operates in continuous time

    CMOS systems and circuits for sub-degree per hour MEMS gyroscopes

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    The objective of our research is to develop system architectures and CMOS circuits that interface with high-Q silicon microgyroscopes to implement navigation-grade angular rate sensors. The MEMS sensor used in this work is an in-plane bulk-micromachined mode-matched tuning fork gyroscope (M² – TFG ), fabricated on silicon-on-insulator substrate. The use of CMOS transimpedance amplifiers (TIA) as front-ends in high-Q MEMS resonant sensors is explored. A T-network TIA is proposed as the front-end for resonant capacitive detection. The T-TIA provides on-chip transimpedance gains of 25MΩ, has a measured capacitive resolution of 0.02aF /√Hz at 15kHz, a dynamic range of 104dB in a bandwidth of 10Hz and consumes 400μW of power. A second contribution is the development of an automated scheme to adaptively bias the mechanical structure, such that the sensor is operated in the mode-matched condition. Mode-matching leverages the inherently high quality factors of the microgyroscope, resulting in significant improvement in the Brownian noise floor, electronic noise, sensitivity and bias drift of the microsensor. We developed a novel architecture that utilizes the often ignored residual quadrature error in a gyroscope to achieve and maintain perfect mode-matching (i.e.0Hz split between the drive and sense mode frequencies), as well as electronically control the sensor bandwidth. A CMOS implementation is developed that allows mode-matching of the drive and sense frequencies of a gyroscope at a fraction of the time taken by current state of-the-art techniques. Further, this mode-matching technique allows for maintaining a controlled separation between the drive and sense resonant frequencies, providing a means of increasing sensor bandwidth and dynamic range. The mode-matching CMOS IC, implemented in a 0.5μm 2P3M process, and control algorithm have been interfaced with a 60μm thick M2−TFG to implement an angular rate sensor with bias drift as low as 0.1°/hr ℃ the lowest recorded to date for a silicon MEMS gyro.Ph.D.Committee Chair: Farrokh Ayazi; Committee Member: Jennifer Michaels; Committee Member: Levent Degertekin; Committee Member: Paul Hasler; Committee Member: W. Marshall Leac

    Opto-Acoustic Oscillator Using Silicon Mems Optical Modulator

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    We show operation of a silicon MEMS based narrow-band optical modulator with large modulation depth by improving the electro-mechanical transducer. We demonstrate an application of the narrowband optical modulator as both the filter and optical modulator in an opto-electronic oscillator loop to obtain a 236.22 MHz Opto-Acoustic Oscillator (OAO) with phase noise of -68 dBc/Hz at 1 kHz offset

    A dual-mass capacitive-readout accelerometer operated near pull-in

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    A mechanical two-mass configuration and a readout circuit for a single-axis capacitive-readout accelerometer with ΣΔ force-feedback is presented. The system reduces electrical and quantisation input-referred noise through the use of negative springs, reduced gaps in the readout capacitors and maximised readout voltage. A theoretical analysis and simulation results are discussed

    Small-size MEMS accelerometer encapsulated in vacuum using Sigma-Delta modulation

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    A vacuum encapsulated MEMS accelerometer using Sigma-Delta modulation is here presented. Three different modulation orders (second, third, and fourth) were implemented in a field-programable gate array (FPGA), enabling flexibility for tuning the loop parameters in real-time. Three devices were measured, and the results are in good agreement with simulations performed in Simulink. A noise figure of 123 μg/√Hz for a bandwidth of 400 Hz and a range of at least ±1 g was experimentally measured. A figure of merit considering device size and bandwidth is proposed, highlighting the relevance of the results for the current state of the art.FCT - Fundação para a Ciência e a Tecnologia (PDE/BDE/114563/2016

    A high precision fully integrated accelerometer

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    Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1996.Includes bibliographical references (p. 193-196).by Michael Anthony Ashburn, Jr.M.S

    RF MEMS reference oscillators platform for wireless communications

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    A complete platform for RF MEMS reference oscillator is built to replace bulky quartz from mobile devices, thus reducing size and cost. The design targets LTE transceivers. A low phase noise 76.8 MHz reference oscillator is designed using material temperature compensated AlN-on-silicon resonator. The thesis proposes a system combining piezoelectric resonator with low loading CMOS cross coupled series resonance oscillator to reach state-of-the-art LTE phase noise specifications. The designed resonator is a two port fundamental width extensional mode resonator. The resonator characterized by high unloaded quality factor in vacuum is designed with low temperature coefficient of frequency (TCF) using as compensation material which enhances the TCF from - 3000 ppm to 105 ppm across temperature ranges of -40˚C to 85˚C. By using a series resonant CMOS oscillator, phase noise of -123 dBc/Hz at 1 kHz, and -162 dBc/Hz at 1MHz offset is achieved. The oscillator’s integrated RMS jitter is 106 fs (10 kHz–20 MHz), consuming 850 μA, with startup time is 250μs, achieving a Figure-of-merit (FOM) of 216 dB. Electronic frequency compensation is presented to further enhance the frequency stability of the oscillator. Initial frequency offset of 8000 ppm and temperature drift errors are combined and further addressed electronically. A simple digital compensation circuitry generates a compensation word as an input to 21 bit MASH 1 -1-1 sigma delta modulator incorporated in RF LTE fractional N-PLL for frequency compensation. Temperature is sensed using low power BJT band-gap front end circuitry with 12 bit temperature to digital converter characterized by a resolution of 0.075˚C. The smart temperature sensor consumes only 4.6 μA. 700 MHz band LTE signal proved to have the stringent phase noise and frequency resolution specifications among all LTE bands. For this band, the achieved jitter value is 1.29 ps and the output frequency stability is 0.5 ppm over temperature ranges from -40˚C to 85˚C. The system is built on 32nm CMOS technology using 1.8V IO device

    A chip-scale integrated cavity-electro-optomechanics platform

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    We present an integrated optomechanical and electromechanical nanocavity, in which a common mechanical degree of freedom is coupled to an ultrahigh-Q photonic crystal defect cavity and an electrical circuit. The sys- tem allows for wide-range, fast electrical tuning of the optical nanocavity resonances, and for electrical control of optical radiation pressure back-action effects such as mechanical amplification (phonon lasing), cooling, and stiffening. These sort of integrated devices offer a new means to efficiently interconvert weak microwave and optical signals, and are expected to pave the way for a new class of micro-sensors utilizing optomechanical back-action for thermal noise reduction and low-noise optical read-out.Comment: 11 pages, 7 figure

    Integrated interface electronics for capacitive MEMS inertial sensors

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    This thesis is composed of 13 publications and an overview of the research topic, which also summarizes the work. The research presented in this thesis concentrates on integrated circuits for the realization of interface electronics for capacitive MEMS (micro-electro-mechanical system) inertial sensors, i.e. accelerometers and gyroscopes. The research focuses on circuit techniques for capacitive detection and actuation and on high-voltage and clock generation within the sensor interface. Characteristics of capacitive accelerometers and gyroscopes and the electronic circuits for accessing the capacitive information in open- and closed-loop configurations are introduced in the thesis. One part of the experimental work, an accelerometer, is realized as a continuous-time closed-loop sensor, and is capable of achieving sub-micro-g resolution. The interface electronics is implemented in a 0.7-µm high-voltage technology. It consists of a force feedback loop, clock generation circuits, and a digitizer. Another part of the experimental work, an analog 2-axis gyroscope, is optimized not only for noise, but predominantly for low power consumption and a small chip area. The implementation includes a pseudo-continuous-time sense readout, analog continuous-time drive loop, phase-locked loop (PLL) for clock generation, and high-voltage circuits for electrostatic excitation and high-voltage detection. The interface is implemented in a 0.35-µm high-voltage technology within an active area of 2.5 mm². The gyroscope achieves a spot noise of 0.015 °/s/√H̅z̅ for the x-axis and 0.041 °/s/√H̅z̅ for the y-axis. Coherent demodulation and discrete-time signal processing are often an important part of the sensors and also typical examples that require clock signals. Thus, clock generation within the sensor interfaces is also reviewed. The related experimental work includes two integrated charge pump PLLs, which are optimized for compact realization but also considered with regard to their noise performance. Finally, this thesis discusses fully integrated high-voltage generation, which allows a higher electrostatic force and signal current in capacitive sensors. Open- and closed-loop Dickson charge pumps and high-voltage amplifiers have been realized fully on-chip, with the focus being on optimizing the chip area and on generating precise spurious free high-voltage signals up to 27 V
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