Ring-oscillator with multiple transconductors for linear analog-to-digital conversion

This paper proposes a new circuit-based approach to mitigate nonlinearity in open-loop ring-oscillator-based analog-to-digital converters (ADCs). The approach consists of driving a current-controlled oscillator (CCO) with several transconductors connected in parallel with different bias conditions. The current injected into the oscillator can then be properly sized to linearize the oscillator, performing the inverse current-to-frequency function. To evaluate the approach, a circuit example has been designed in a 65-nm CMOS process, leading to a more than 3-ENOB enhancement in simulation for a high-swing differential input voltage signal of 800-mVpp, with considerable less complex design and lower power and expected area in comparison to state-of-the-art circuit based solutions. The architecture has also been checked against PVT and mismatch variations, proving to be highly robust, requiring only very simple calibration techniques. The solution is especially suitable for high-bandwidth (tens of MHz) medium-resolution applications (10–12 ENOBs), such as 5G or Internet-of-Things (IoT) devices.This research was funded by Project TEC2017-82653-R, Spain

Design of a low power switched-capacitor pipeline analog-to-digital converter

An Analog to Digital Converter (ADC) is a circuit which converts an analog signal into digital signal. Real world is analog, and the data processed by the computer or by other signal processing systems is digital. Therefore, the need for ADCs is obvious. In this thesis, several novel designs used to improve ADCs operation speed and reduce ADC power consumption are proposed. First, a high speed switched source follower (SSF) sample and hold amplifier without feedthrough penalty is implemented and simulated. The SSF sample and hold amplifier can achieve 6 Bit resolution with sampling rate at 10Gs/s. Second, a novel rail-to-rail time domain comparator used in successive approximation register ADC (SAR ADC) is implemented and simulated. The simulation results show that the proposed SAR ADC can only consume 1.3 muW with a 0.7 V power supply. Finally, a prototype pipeline ADC is implemented and fabricated in an IBM 90nm CMOS process. The proposed design is validated using measurement on a fabricated silicon IC, and the proposed 10-bit ADC achieves a peak signal-to-noise- and-distortion-ratio (SNDR) of 47 dB. This SNDR translates to a figure of merit (FOM) of 2.6N/conversion-step with a 1.2 V power supply

On-chip Voltage Regulator– Circuit Design and Automation

Title from PDF of title page viewed May 24, 2021Dissertation advisors: Masud H Chowdhury and Yugyung LeeVitaIncludes bibliographical references (page 106-121)Thesis (Ph.D.)--School of Computing and Engineering. University of Missouri--Kansas City, 2021With the increase of density and complexity of high-performance integrated circuits and systems, including many-core chips and system-on-chip (SoC), it is becoming difficult to meet the power delivery and regulation requirements with off-chip regulators. The off-chip regulators become a less attractive choice because of the higher overheads and complexity imposed by the additional wires, pins, and pads. The increased I2R loss makes it challenging to maintain the integrity of different voltage domains under a lower supply voltage environment in the smaller technology nodes. Fully integrated on-chip voltage regulators have proven to be an effective solution to mitigate power delivery and integrity issues. Two types of regulators are considered as most promising for on-chip implementation: (i) the low-drop-out (LDO) regulator and (ii) the switched-capacitor (SC)regulator. The first part of our research mainly focused on the LDO regulator. Inspired by the recent surge of interest for cap-less voltage regulators, we presented two fully on-chip external capacitor-less low-dropout voltage regulator design. The second part of this proposal explores the complexity of designing each block of the regulator/analog circuit and proposed a design methodology for analog circuit synthesis using simulation and learning-based approach. As the complexity is increasing day-by-day in an analog circuit, hierarchical flow mostly uses for design automation. In this work, we focused mainly on Circuit-level, one of the significant steps in the flow. We presented a novel, efficient circuit synthesis flow based on simulation and learning-based optimization methods. The proposed methodology has two phases: the learning phase and the evaluation phase. Random forest, a supervised learning is used to reduce the sample points in the design space and iteration number during the learning phase. Additionally, symmetric constraints are used further to reduce the iteration number during the sizing process. We introduced a three-step circuit synthesis flow to automate the analog circuit design. We used H-spice as a simulation tool during the evaluation phase of the proposed methodology. The three most common analog circuits are chosen: single-stage differential amplifier, operational transconductance amplifier, and two-stage differential amplifier to verify the algorithm. The tool is developed in Python, and the technology we used is0.6um. We also verified the optimized result in Cadence Virtuoso.Introduction -- On-chip power delivery system -- Fundamentals of on-chip voltage regulator -- LDO design in 45NM technology -- LDO design in technology -- Analog design automation -- Proposed analog design methodology -- Energy efficient FDSOI and FINFET based power gating circuit using data retention transistor -- Conclusion and future wor

gm/ID Design Techniques for Low-power High-performance CMOS Analog Integrated Circuits

The gm/ID-based design of analog integrated circuits introduced in 1996 employs an empirical transistor sizing methodology using SPICE-generated lookup tables that enables good agreement between simulations and specifications. This thesis introduces a new SPICE lookup table that extends the gm/ID approach to the Miller pole-splitting frequency compensation of the classical CMOS two-stage operational transconductance amplifier (OTA) that has been in high-volume production since 1980. As the transistor device scale down, low power consumption is one of the main key features in modern analog design. In the design of ultra-low-power amplifiers, the iconic plots of gm/ID vs VOV suggest that some devices should be operated deep in weak inversion (e.g., VOV ≃ _0.2V) where gm/ID is near maximum. Performance parameters such as gain, bandwidth, thermal noise, power dissipation, etc., benefit from this choice. However, in applications where small-signal settling time is critical (e.g., precision switched-capacitor circuits), the unity-gain phase margin, PM, is a parameter of paramount importance. PM (i.e., small-signal settling time) vs. VOV (i.e., strong, moderate or weak inversion) design considerations are presented. The key result is that as the design choice of VOV moves the region of operation from strong to moderate to weak inversion, PM is reduced substantially and settling time is increased dramatically. In addition to new design insights, area-efficient device layout techniques are illustrated that improve performance

LOW POWER AND HIGH SIGNAL TO NOISE RATIO BIO-MEDICAL AFE DESIGN TECHNIQUES

The research work described in this thesis was focused on finding novel techniques to implement a low-power and noise Bio-Medical Analog Front End (BMEF) circuit technique to enable high-quality Electrocardiography (ECG) sensing. Usually, an ECG signal and several bio-medical signals are sensed from the human body through a pair of electrodes. The electrical characteristics of the very small amplitude (1u-10mV) signals are corrupted by random noise and have a significant dc offset. 50/60Hz power supply coupling noise is one of the biggest cross-talk signals compared to the thermally generated random noise. These signals are even AFE composed of an Instrumentation Amplifier (IA), which will have a better Common Mode rejection ratio (CMRR). The main function of the AFE is to convert the weak electrical Signal into large signals whose amplitude is large enough for an Analog Digital Converter (ADC) to detect without having any errors. A Variable Gain Amplifier (VGA) is sometimes required to adjust signal amplitude to maintain the dynamic range of the ADC. Also, the Bio-medical transceiver needs an accurate and temperature-independent reference voltage and current for the ADC, commonly known as Bandgap Reference Circuit (BGR). These circuits need to consume as low power as possible to enable these circuits to be powered from the battery. The work started with analysing the existing circuit techniques for the circuits mentioned above and finding the key important improvements required to reach the target specifications. Previously proposed IA is generated based on voltage mode signal processing. To improve the CMRR (119dB), we proposed a current mode-based IA with an embedded DC cancellation technique. State-of-the-art VGA circuits were built based on the degeneration principle of the differential pair, which will enable the variable gain purpose, but none of these techniques discussed linearity improvement, which is very important in modern CMOS technologies. This work enhances the total Harmonic distortion (THD) by 21dB in the worst case by exploiting the feedback techniques around the differential pair. Also, this work proposes a low power curvature compensated bandgap with 2ppm/0C temperature sensitivity while consuming 12.5uW power from a 1.2V dc power supply. All circuits were built in 45nm TSMC-CMOS technology and simulated with all the performance metrics with Cadence (spectre) simulator. The circuit layout was carried out to study post-layout parasitic effect sensitivity

Low-Noise Amplifier and Noise/Distortion Shaping Beamformer

The emergence of advanced technologies has increased the need for fast and efficient mobile communication that can facilitate transferring large amounts of data and simultaneously serve multiple users. Future wireless systems will rely on millimeter-wave frequencies, enabled by recent silicon hardware advancements. High-frequency millimeter-wave technology and low-noise receiver front ends and amplifiers are key for improved performance and energy efficiency. This thesis proposes two LNA topologies that offer wide input-power-matched bandwidths and low noise figures, eliminating the need for complex matching networks at the LNA input. These topologies use intrinsic feedback through gate-drain networks and/or the resistance of the SOI-transistor back-gate terminal to achieve the real part of the input impedance. The two LNAs are experimentally demonstrated with two 22-nm FDSOI LNAs. One LNA, matched with the assistance of the gate-drain network, exhibits a bandwidth ranging from 7.7-33.3 GHz, which is further improved to 6-38.7 GHz through the application of the back-gate-resistance method. The two LNAs have noise-figure minima of 1.8 and 1.9 dB, maximum gains of 14.7 and 15.6 dB, and maximum IP1dBs of -9.1 and -7.8 dBm while consuming 10 and 7.8 mW of power and occupying 0.04 and 0.03 mm^2 of active areas, respectively. This thesis also presents the first experimental demonstration of noise/distortion (ND) shaping beamformer. The NDs originating in the receiver itself are spatio-temporally shaped away from the beamformer region of support, thereby permitting their suppression by the beamformer. The demonstrator is a 24.3-28.7 GHz, 79.28 mW 4-port receiver for a 4-element antenna array implemented in 22-nm FDSOI CMOS. When shaping was enabled, the concept demonstrator provided average improvements to the NF and IP1dB of 1.6 dB and 2.25 dB, respectively (compared to a reference design), and achieved NF=2.6 dB and IP1dB=-18.7dBm while consuming 19.8 mW/channel

Temperature sensors in SOI CMOS for high temperature applications

Ph.DDOCTOR OF PHILOSOPH

Design and implementation of a wideband sigma delta ADC

Abstract. High-speed and wideband ADCs have become increasingly important in response to the growing demand for high-speed wireless communication services. Continuous time sigma delta modulators (CTƩ∆M), well-known for their oversampling and noise shaping properties, offer a promising solution for low-power and high-speed design in wireless applications. The objective of this thesis is to design and implement a wideband CTƩ∆M for a global navigation satellite system(GNSS) receiver. The targeted modulator architecture is a 3rdorder single-bit CTƩ∆M, specifically designed to operate within a 15 MHz signal bandwidth. With an oversampling ratio of 25, the ADC’s sampling frequency is set at 768 MHz. The design goal is to achieve a theoretical signal to noise ratio (SNR) of 55 dB. This thesis focuses on the design and implementation of the CTƩ∆M, building upon the principles of a discrete time Ʃ∆ modulator, and leveraging system-level simulation and formulations. A detailed explanation of the coefficient calculation procedure specific to CTƩ∆ modulators is provided, along with a "top-down" design approach that ensures the specified requirements are met. MATLAB scripts for coefficient calculation are also included. To overcome the challenges associated with the implementation of CTƩ∆ modulators, particularly excess loop delay and clock jitter sensitivity, this thesis explores two key strategies: the introduction of a delay compensation path and the utilization of a finite impulse response (FIR) feedback DAC. By incorporating a delay compensation path, the stability of the modulator can be ensured and its noise transfer function (NTF) can be restored. Additionally, the integration of an FIR feedback DAC addresses the issue of clock jitter sensitivity, enhancing the overall performance and robustness of the CTƩ∆M. The CTƩ∆Ms employ the cascade of integrators with feed forward (CIFF) and cascade of integrators with feedforward and feedback (CIFF-B) topologies, with a particular emphasis on the CIFF-B configuration using 22nm CMOS technology node and a supply voltage of 0.8 V. Various simulations are performed to validate the modulator’s performance. The simulation results demonstrate an achievable SNR of 55 dB with a power consumption of 1.36 mW. Furthermore, the adoption of NTF zero optimization techniques enhances the SNR to 62 dB.Laajakaistaisen jatkuva-aikaisen sigma delta-AD-muuntimen suunnittelu ja toteutus. Tiivistelmä. Nopeat ja laajakaistaiset AD-muuntimet ovat tulleet entistä tärkeämmiksi nopeiden langattomien kommunikaatiopalvelujen kysynnän kasvaessa. Jatkuva-aikaiset sigma delta -modulaattorit (CTƩ∆M), joissa käytetään ylinäytteistystä ja kohinanmuokkausta, tarjoavat lupaavan ratkaisun matalan tehonkulutuksen ja nopeiden langattomien sovellusten suunnitteluun. Tämän työn tarkoituksena on suunnitella ja toteuttaa laajakaistainen jatkuva -aikainen sigma delta -modulaattori satelliittipaikannusjärjestelmien (GNSS) vastaanottimeen. Arkkitehtuuriltaan modulaattori on kolmannen asteen 1-bittinen CTƩ∆M, jolla on 15MHz:n signaalikaistanleveys. Ylinäytteistyssuhde on 25 ja AD muuntimen näytteistystaajuus 768 MHz. Tavoitteena on saavuttaa teoreettinen 55 dB signaalikohinasuhde (SNR). Tämä työ keskittyy jatkuva-aikaisen sigma delta -modulaattorin suunnitteluun ja toteutukseen, perustuen diskreettiaikaisen Ʃ∆-modulaattorin periaatteisiin ja systeemitason simulointiin ja mallitukseen. Jatkuva-aikaisen sigma delta -modulaattorin kertoimien laskentamenetelmä esitetään yksityiskohtaisesti, ja vaatimusten täyttyminen varmistetaan “top-down” -suunnitteluperiaatteella. Liitteenä on kertoimien laskemiseen käytetty MATLAB-koodi. Jatkuva-aikaisten sigma delta -modulaattoreiden erityishaasteiden, liian pitkän silmukkaviiveen ja kellojitterin herkkyyden, voittamiseksi tutkitaan kahta strategiaa, viiveen kompensointipolkua ja FIR takaisinkytkentä -DA muunninta. Viivekompensointipolkua käyttämällä modulaattorin stabiilisuus ja kohinansuodatusfunktio saadaan varmistettua ja korjattua. Lisäksi FIR takaisinkytkentä -DA-muuntimen käyttö pienentää kellojitteriherkkyyttä, parantaen jatkuva aikaisen sigma delta -modulaattorin kokonaissuorituskykyä ja luotettavuutta. Toteutetuissa jatkuva-aikaisissa sigma delta -modulaattoreissa on kytketty peräkkäin integraattoreita myötäkytkentärakenteella (CIFF) ja toisessa sekä myötä- että takaisinkytkentärakenteella (CIFF-B). Päähuomio on CIFF-B rakenteessa, joka toteutetaan 22nm CMOS prosessissa käyttäen 0.8 voltin käyttöjännitettä. Suorityskyky varmistetaan erilaisilla simuloinneilla, joiden perusteella 55 dB SNR saavutetaan 1.36 mW tehonkulutuksella. Lisäksi kohinanmuokkausfunktion optimoinnilla SNR saadaan nostettua 62 desibeliin