MCML D-Latch Using Triple-Tail Cells: Analysis and Design

A new low-voltage MOS current mode logic (MCML) topology for D-latch is proposed. The new topology employs a triple-tail cell to lower the supply voltage requirement in comparison to traditional MCML D-latch. The design of the proposed MCML D-latch is carried out through analytical modeling of its static parameters. The delay is expressed in terms of the bias current and the voltage swing so that it can be traded off with the power consumption. The proposed low-voltage MCML D-latch is analyzed for the two design cases, namely, high-speed and power-efficient, and the performance is compared with the traditional MCML D-latch for each design case. The theoretical propositions are validated through extensive SPICE simulations using TSMC 0.18 µm CMOS technology parameters

Design of Frequency divider with voltage vontrolled oscillator for 60 GHz low power phase-locked loops in 65 nm RF CMOS

Increasing memory capacity in mobile devices, is driving the need of high-data rates equipment. The 7 GHz band around 60 GHz provides the opportunity for multi-gigabit/sec wireless communication. It is a real opportunity for developing next generation of High-Definition (HD) devices. In the last two decades there was a great proliferation of Voltage Controlled Oscillator (VCO) and Frequency Divider (FD) topologies in RF ICs on silicon, but reaching high performance VCOs and FDs operating at 60 GHz is in today's technology a great challenge. A key reason is the inaccuracy of CMOS active and passive device models at mm-W. Three critical issues still constitute research objectives at 60 GHz in CMOS: generation of the Local Oscillator (LO) signal (1), division of the LO signal for the Phase-Locked Loop (PLL) closed loop (2) and distribution of the LO signal (3). In this Thesis, all those three critical issues are addressed and experimentally faced-up: a divide-by-2 FD for a PLL of a direct-conversion transceiver operating at mm-W frequencies in 65 nm RF CMOS technology has been designed. Critical issues such as Process, Voltage and Temperature (PVT) variations, Electromagnetic (EM) simulations and power consumption are addressed to select and design a FD with high frequency dividing range. A 60 GHz VCO is co-designed and integrated in the same die, in order to provide the FD with mm-W input signal. VCOs and FDs play critical roles in the PLL. Both of them constitute the PLL core components and they would need co-design, having a big impact in the overall performance especially because they work at the highest frequency in the PLL. Injection Locking FD (ILFD) has been chosen as the optimum FD topology to be inserted in the control loop of mm-W PLL for direct-conversion transceiver, due to the high speed requirements and the power consumption constraint. The drawback of such topology is the limited bandwidth, resulting in narrow Locking Range (LR) for WirelessHDTM applications considering the impact of PVT variations. A simulation methodology is presented in order to analyze the ILFD locking state, proposing a first divide-by-2 ILFD design with continuous tuning. In order to design a wide LR, low power consumption ILFD, the impacts of various alternatives of low/high Q tank and injection scheme are deeply analysed, since the ILFD locking range depends on the Q of the tank and injection efficiency. The proposed 3-bit dual-mixing 60 GHz divide-by-2 LC-ILFD is designed with an accumulation of switching varactors binary scaled to compensate PVT variations. It is integrated in the same die with a 4-bit 60 GHz LC-VCO. The overall circuit is designed to allow measurements of the singles blocks stand-alone and working together. The co-layout is carried on with the EM modelling process of passives devices, parasitics and transmission lines extracted from the layout. The inductors models provided by the foundry are qualified up to 40 GHz, therefore the EM analysis is a must for post-layout simulation. The PVT variations have been simulated before manufacturing and, based on the results achieved, a PLL scheme PVT robust, considering frequency calibration, has been patented. The test chip has been measured in the CEA-Leti (Grenoble) during a stay of one week. The operation principle and the optimization trade-offs among power consumption, and locking ranges of the final selected ILFD topology have been demonstrated. Even if the experimental results are not completely in agreement with the simulations, due to modelling error and inaccuracy, the proposed technique has been validated with post-measurement simulations. As demonstrated, the locking range of a low-power, discrete tuned divide-by-2 ILFD can be enhanced by increasing the injection efficiency, without the drawbacks of higher power consumption and chip area. A 4-bits wide tuning range LC-VCO for mm-W applications has been co-designed using the selected 65 nm CMOS process.Postprint (published version

Modelling and performance analysis of multigigabit serial interconnects using real number based analog verification methods

The increasing importance of multigigabit transceiver circuits in modern chip design calls for new methods of analyzing and integrating these challenging building blocks. This work presents a design and analysis framework basend on the SystemVerilog real number modeling ansatz. It further extends the simulation possibilities thus obtained by introducing additional higher level numeric modelling and evaluation methods to support multigigabit statistical link budgeting procedures based on the Peak Distortion Algorithm

Towards the Design of Robust High-Speed and Power Efficient Short Reach Photonic Links

In 2014, approximately eight trillion transistors were fabricated every second thanks to improvements in integration density and fabrication processes. This increase in integration and functionality has also brought about the possibility of system on chip (SoC) and high-performance computing (HPC). Electrical interconnects presently dominate the very-short reach interconnect landscape (< 5 cm) in these applications. This, however, is expected to change. These interconnects' downfall will be caused by their need for impedance matching, limited pin-density and frequency dependent loss leading to intersymbol interference. In an attempt to solve this, researchers have increasingly explored integrated silicon photonics as it is compatible with current CMOS processes and creates many possibilities for short-reach applications. Many see optical interconnects as the high-speed link solution for applications ranging from intra-data center (~200 m) down to module or even chip scales (< 2 cm). The attractive properties of optical interconnects, such as low loss and multiplexing abilities, will enable such things as Exascale high-performance computers of the future (equal to 10^18 calculations per second). In fact, forecasts predict that by 2025 photonics at the smallest levels of the interconnect hierarchy will be a reality. This thesis presents three novel research projects, which all work towards increasing robustness and cost-efficiency in short-reach optical links. It discusses three parts of the optical link: the interconnect, the receiver and the photodiode. The first topic of this thesis is exploratory work on the use of an optical multiplexing technique, mode-division multiplexing (MDM), to carry multiple data lanes along with a forwarded clock for very short-reach applications. The second topic discussed is a novel reconfigurable CMOS receiver proposed as a method to map a clock signal to an interconnect lane in an MDM source-synchronous link with the lowest optical crosstalk. The receiver is designed as a method to make electronic chips that suit the needs of optical ones. By leveraging the more robust electronic integrated circuit, link solutions can be tuned to meet the needs of photonic chips on a die by die basis. The third topic of this thesis proposes a novel photodetector which uses photonic grating couplers to redirect vertical incident light to the horizontal direction. With this technique, the light is applied along the entire length of a p-n junction to improve the responsivity and speed of the device. Experimental results for this photodetector at 35 Gb/s are published, showing it to be the fastest all-silicon based photodetector reported in the literature at the time of publication

Analysis and Design of Robust Multi-Gb/s Clock and Data Recovery Circuits

The bandwidth demands of modern computing systems have been continually increasing and the recent focus on parallel processing will only increase the demands placed on data communication circuits. As data rates enter the multi-Gb/s range, serial data communication architectures become attractive as compared to parallel architectures. Serial architectures have long been used in fibre optic systems for long-haul applications, however, in the past decade there has been a trend towards multi-Gb/s backplane interconnects. The integration of clock and data recovery (CDR) circuits into monolithic integrated circuits (ICs) is attractive as it improves performance and reduces the system cost, however it also introduces new challenges, one of which is robustness. In serial data communication systems the CDR circuit is responsible for recovering the data from an incoming data stream. In recent years there has been a great deal of research into integrating CDR circuits into monolithic ICs. Most research has focused on increasing the bandwidth of the circuits, however in order to integrate multi-Gb/s CDR circuits robustness, as well as performance, must be considered. In this thesis CDR circuits are analyzed with respect to their robustness. The phase detector is a critical block in a CDR circuit and its robustness will play a significant role in determining the overall performance in the presence of process non-idealities. Several phase detector architectures are analyzed to determine the effects of process non-idealities. Static phase offsets are introduced as a figure of merit for phase detectors and a mathematical framework is described to characterize the negative effects of static phase offsets on CDR circuits. Two approaches are taken to improve the robustness of CDR circuits. First, calibration circuits are introduced which correct for static phase offsets in CDR circuits. Secondly, phase detector circuits are introduced which have been designed to optimize both performance and robustness. Several prototype chips which implement these schemes will be described and measured results will be presented. These results show that while CDR circuits are vulnerable to the effects of process non-idealities, there are circuit techniques which can mitigate many of these concerns

Components for Wide Bandwidth Signal Processing in Radio Astronomy

In radio astronomy wider observing bandwidths are constantly desired for the reasons of improved sensitivity and velocity coverage. As observing frequencies move steadily higher these needs become even more pressing. In order to process wider bandwidths, components that can perform at higher frequencies are required. The chief limiting component in the area of digital spectrometers and correlators is the digitiser. This is the component that samples and quantises the bandwidth of interest for further digital processing, and must function at a sample rate of at least twice the operating bandwidth. In this work a range of high speed digitiser integrated circuits (IC) are designed using an advanced InP HBT semiconductor process and their performance limits analysed. These digitiser ICs are shown to operate at up to 10 giga-samples/s, significantly faster than existing digitisers, and a complete digitiser system incorporating one of these is designed and tested that operates at up to 4 giga-samples/s, giving 2 GHz bandwidth coverage. The digitisers presented include a novel photonic I/O digitiser which contains an integrated photonic interface and is the first digitiser device reported with integrated photonic connectivity. In the complementary area of analogue correlators the limiting component is the device which performs the multiplication operation inherent in the correlation process. A 15 GHz analogue multiplier suitable for such systems is designed and tested and a full noise analysis of multipliers in analogue correlators presented. A further multiplier design in SiGe HBT technology is also presented which offers benefits in the area of low frequency noise. In the effort to process even wider bandwidths, applications of photonics to digitisers and multipliers are investigated. A new architecture for a wide bandwidth photonic multiplier is presented and its noise properties analysed, and the use of photonics to increase the sample rate of digitisers examined

Radiation Tolerant Electronics, Volume II

Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation hardened electronics for space applications, high-energy physics experiments such as those on the large hadron collider at CERN, and many terrestrial nuclear applications, including nuclear energy and safety management. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their ionizing radiation susceptibility has raised many exciting challenges, which are expected to drive research in the coming decade.After the success of the first Special Issue on Radiation Tolerant Electronics, the current Special Issue features thirteen articles highlighting recent breakthroughs in radiation tolerant integrated circuit design, fault tolerance in FPGAs, radiation effects in semiconductor materials and advanced IC technologies and modelling of radiation effects

Ultra-Low Power Transmitter and Power Management for Internet-of-Things Devices

Two of the most critical components in an Internet-of-Things (IoT) sensing and transmitting node are the power management unit (PMU) and the wireless transmitter (Tx). The desire for longer intervals between battery replacements or a completely self-contained, battery-less operation via energy harvesting transducers and circuits in IoT nodes demands highly efficient integrated circuits. This dissertation addresses the challenge of designing and implementing power management and Tx circuits with ultra-low power consumption to enable such efficient operation. The first part of the dissertation focuses on the study and design of power management circuits for IoT nodes. This opening portion elaborates on two different areas of the power management field: Firstly, a low-complexity, SPICE-based model for general low dropout (LDO) regulators is demonstrated. The model aims to reduce the stress and computation times in the final stages of simulation and verification of Systems-on-Chip (SoC), including IoT nodes, that employ large numbers of LDOs. Secondly, the implementation of an efficient PMU for an energy harvesting system based on a thermoelectric generator transducer is discussed. The PMU includes a first-in-its-class LDO with programmable supply noise rejection for localized improvement in the suppression. The second part of the dissertation addresses the challenge of designing an ultra- low power wireless FSK Tx in the 900 MHz ISM band. To reduce the power consumption and boost the Tx energy efficiency, a novel delay cell exploiting current reuse is used in a ring-oscillator employed as the local oscillator generator scheme. In combination with an edge-combiner PA, the Tx showed a measured energy efficiency of 0.2 nJ/bit and a normalized energy efficiency of 3.1 nJ/(bit∙mW) when operating at output power levels up to -10 dBm and data rates of 3 Mbps. To close this dissertation, the implementation of a supply-noise tolerant BiCMOS ring-oscillator is discussed. The combination of a passive, high-pass feedforward path from the supply to critical nodes in the selected delay cell and a low cost LDO allow the oscillator to exhibit power supply noise rejection levels better than –33 dB in experimental results