A Low-Voltage CMOS Buffer for RF Applications Based on a Fully-Differential Voltage-Combiner

Part 20: Electronics: RF ApplicationsInternational audienceThis paper presents a new CMOS buffer circuit topology for radio-frequency (RF) applications based on a fully-differential voltage-combiner circuit, capable of operating at low-voltage. The proposed circuit uses a combination of common-source (CS) and common-drain (CD) devices. The simulation results show good levels of linearity and bandwidth. To improve total harmonic distortion (THD) a source degeneration technique is used. The proposed circuit has been designed in a 130nm logic CMOS technology and it achieves a simulated gain of 1.54 dB, a bandwidth of 1.14 GHz for a total power dissipation of 13.34 mW, when driving an RF active probe (with 0.8 pF in parallel with 200 kΩ)

RF Power Transfer, Energy Harvesting, and Power Management Strategies

Energy harvesting is the way to capture green energy. This can be thought of as a recycling process where energy is converted from one form (here, non-electrical) to another (here, electrical). This is done on the large energy scale as well as low energy scale. The former can enable sustainable operation of facilities, while the latter can have a significant impact on the problems of energy constrained portable applications. Different energy sources can be complementary to one another and combining multiple-source is of great importance. In particular, RF energy harvesting is a natural choice for the portable applications. There are many advantages, such as cordless operation and light-weight. Moreover, the needed infra-structure can possibly be incorporated with wearable and portable devices. RF energy harvesting is an enabling key player for Internet of Things technology. The RF energy harvesting systems consist of external antennas, LC matching networks, RF rectifiers for ac to dc conversion, and sometimes power management. Moreover, combining different energy harvesting sources is essential for robustness and sustainability. Wireless power transfer has recently been applied for battery charging of portable devices. This charging process impacts the daily experience of every human who uses electronic applications. Instead of having many types of cumbersome cords and many different standards while the users are responsible to connect periodically to ac outlets, the new approach is to have the transmitters ready in the near region and can transfer power wirelessly to the devices whenever needed. Wireless power transfer consists of a dc to ac conversion transmitter, coupled inductors between transmitter and receiver, and an ac to dc conversion receiver. Alternative far field operation is still tested for health issues. So, the focus in this study is on near field. The goals of this study are to investigate the possibilities of RF energy harvesting from various sources in the far field, dc energy combining, wireless power transfer in the near field, the underlying power management strategies, and the integration on silicon. This integration is the ultimate goal for cheap solutions to enable the technology for broader use. All systems were designed, implemented and tested to demonstrate proof-of concept prototypes

RF CMOS Transmitter Front-end with Output Power Combiner

In this thesis strategies to achieve a high efficiency RF front-end are studied and presented. A high efficiency Power Amplifier is also proposed and simulated. The applications for this type of designs are vast, but the main ones are in mobile transmission devices where the only power supply source available is a battery. In order to perform this thesis several topologies of power amplifiers were studied, and the decision fell to those based on a switching behavior. The reason for this decision was the need for high efficiency (it’s one of the main objectives). The Class-D power amplifier with its ideal potential efficiency of 100% has proven the most promising for implementation. The objectives for this thesis in terms of implementation were an efficiency of 20% and an output power of 0dBm. Finally, a power-combining technique was used to explore the potential of achieving high output power without affecting the efficiency

A review of technologies and design techniques of millimeter-wave power amplifiers

his article reviews the state-of-the-art millimeter-wave (mm-wave) power amplifiers (PAs), focusing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, gallium arsenide (GaAs), GaN, and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the mm-wave spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of the mm-wave PA design

Design of a 10GHz RF power amplifier in 130nm CMOS technology based on Wilkinson combiner methodology

There is a growing demand today to design and fabricate RF power amplifiers at high frequencies above 5GHz that can directly drive a 50Ω antenna with sufficiently high transmission power to meet the needs of various wireless communication applications. This has typically been done by using GaN or other III-V technologies to build the power amplifier transistor, in order to allow for the use of much higher power supply voltages, than are used in today’s silicon technologies. For example, a 5W GaN power amplifier at 5GHz would typically make use of a VDD of 5V to 10V, and would be done as a discrete device on a separate module from the RF analog circuitry built out of silicon. With the continuing evolution of Moore’s Law, silicon technologies in use today for high frequency wireless communications typically are using VDD of 1.5V or less. There is a desire, however, in many wireless applications to be able to place the RF power amplifier on the same silicon chip as all the other RF/analog IC circuitry, in order to save chip fabrication cost. Consequently, research in improved methods of RF power amplifier design in silicon technology is being done in many IC design laboratories in order to increase the RF power output of power amplifiers built in silicon. This MS Thesis proposes the complete design of a four channel RF power amplifier by using the Wilkinson combiner with 27dBm output power. All the circuits are designed and implemented based on the Global Foundries 130nm SiGe BiCMOS technology and design kit at a frequency of 10GHz with a VDD = 1.5V, to provide 0.5W of RF output signal power into a 50Ω antenna

Low-Jitter Clock Multiplication: a Comparioson between PLLs and DLLs

This paper shows that, for a given power budget, a practical phase-locked loop (PLL)-based clock multiplier generates less jitter than a delay-locked loop (DLL) equivalent. This is due to the fact that the delay cells in a PLL ring-oscillator can consume more power per cell than their counterparts in the DLL. We can show that this effect is stronger than the notorious jitter accumulation effect that occurs in the voltage-controlled oscillator (VCO) of a PLL. First, an analysis of the stochastic-output jitter of the architectures, due to the most important noise sources, is presented. Then, another important source of jitter in a DLL-based clock multiplier is treated, namely the stochastic mismatch in the delay cells which compose the DLL voltage-controlled delay line (VCDL). An analysis is presented that relates the stochastic spread of the delay of the cells to the output jitter of the clock multiplier. A circuit design technique, called impedance level scaling, is then presented which allows the designer to optimize the noise and mismatch behavior of a circuit, independently from other specifications such as speed and linearity. Applying this technique on a delay cell design yields a direct tradeoff between noise induced jitter and power usage, and between stochastic mismatch induced jitter and power usage

Analysis and design of a high power millimeter-wave power amplifier in a SiGe BiCMOS technology

Our current society is characterized by an ever increasing need for bandwidth leading towards the exploration of new parts of the electromagnetic spectrum for data transmission. This results in a rising interest and development of millimeter-wave (mm-wave) circuits which hold the promise of short range multi-gigabit wireless transmissions at 60GHz. These relatively new applications are to co-exist with more established mm-wave consumer products including satellite systems in the Ka-band (26.5GHz - 40GHz) allowing e.g.: video broadcasting, voice over IP (VoIP), internet acces to remote areas, ... Both need significant linear power amplification due to the high attenuation typical for this part of the spectrum, however, satellite systems demand a saturated output power which is easily an order of magnitude larger (output powers in excess of 30dBm / 1W). Monolithic microwave integrated circuits (MMICs) employing III-V chip technologies, e.g.: gallium arsenide (GaAs), gallium nitride (GaN), have historically been the preferred choice to implement efficient mm-wave power amplifiers (PA) with a high saturated output power (>30dBm). To further increase the commercial viability of consumer products in this market segment a low manufacturing cost for the power amplifier, together with the possible integration of additional functions, is highly desirable. These features are the strongpoint of silicon based chip technologies like CMOS and SiGe BiCMOS. However, these technologies have a breakdown voltage typically below 2V for nodes capable of millimeter-wave applications while III-V transistors with equivalent frequency performance demonstrate breakdown voltages in excess of 8V. Because of this, output powers of CMOS and SiGe BiCMOS Ka-band power amplifiers rarely exceed 20dBm which poses the main hurdle for using these technologies in satellite communication (SATCOM). To overcome the limited output power of a single amplifying cell in a silicon technology, caused by the low breakdown voltage, multiple power amplifiers cells need to have their output power effectively combined on-chip. This requires the on-chip integration of high-Q passives within a relative small area to realize both the impedance transformation, to create the optimal load impedance for the different amplifier cells, and implement an efficient on-chip power combination network. Compared to III-V technologies this is again a challenge due to the use of a silicon substrate which introduces higher losses. Once a large enough on-chip output power is created, the issue of launching this signal to the outside world remains. Moreover, due to the limited efficiency of mm-wave PAs, the generated on-chip heat will increase when larger output power are required. This means a chipto-board interface with a low thermal resistance and a low loss electrical connection needs to be devised. Proof of the viability of silicon as a serious candidate for the integration of medium and high power Ka-band amplifiers will only be delivered by long term research and the actual creation of such an amplifier. In this context, the initial goal for the presented work is proposed. This consists of the creation of a power amplifier with a saturated output power above 24dBm (preferably 27dBm), a gain larger than 20dB and an efficiency in excess of 10% (preferably 15%). These specifications where conceived with the precondition of using a 250nm SiGe BiCMOS technology (IHP’s SG25H3) with an fT of 110GHz and a collector to emitter breakdown voltage in open base conditions (BVCEO) of 2.3V. The use of this technology is a significant challenge due to the limited speed, rule of thumb is to have at least one fifth of the fT as the operating frequency, which reflects in the attainable power added efficiency (PAE). On the other hand, proving the possible implementation in this “older” technology shows great potential towards the future integration in a fast technology (e.g.: IHP’s SG13G2, ft =300GHz). Next to issues caused by limitations of the chip technology, the proposed specifications allows to identify generic difficulties with high power silicon PA design, e.g.: design of efficient on-chip power combiners, thermal management, single-ended to differential conversion, ... As this work is of an academic nature the intention of this design was to leave the beaten track and explore alternative topologies. This has led to the adoption of a driver stage using translinear loops for biasing and a transformer-type Wilkinson power combiner previously only used in cable television (CATV) applications. Although the power combiner showed 2dB more loss than expected due to higher than expected substrate losses, both topologies show promise for further integration. Furthermore, an in-depth analysis was performed on the output stage which uses positive feedback to increase its gain. The entire design consists of a four-way power combining class AB power amplifier together with test structures of which the performance was verified by means of probing. Due to the previously mentioned higher than expected loss in the on-chip power combiner, the total output power and power added efficiency (PAE) was 2dB lower than expected from simulations. The result is a saturated output power at 32GHz of 24.1dBm with a PAE of 7.2% and a small signal gain of 25dB. This demonstrates the capability of SiGe BiCMOS to implement PA’s for medium-power mm-wave applications. Moreover, to the best of the author’s knowledge, this PA achieves the second highest saturated output power when comparing SiGe BiCMOS PA’s with center frequency in or close to the Ka-band. The 1dB compression point of this amplifier lies at 22.7dBm which is close to saturated output power and results in a low spectral regrowth when compared to commercial GaAs PA’s (compared with 2MBaud 16QAM input signal at 10dB back-off). Many possible improvements to this design remain. The most important would be the re-design of the on-chip power combiner, possibly with a floating ground shield, to reduce the losses and increase the total output power and PAE. Also the porting of the design to a faster chip technology might result in a considerable increase of the output stage efficiency at the cost of needing to combine more amplifier cells. The transition to a faster chip technology would additionally allow to use this design for alternative mm-wave applications like automotive radar at 79GHz andWiGig at 60GHz

Advanced modulation technology development for earth station demodulator applications

The purpose of this contract was to develop a high rate (200 Mbps), bandwidth efficient, modulation format using low cost hardware, in 1990's technology. The modulation format chosen is 16-ary continuous phase frequency shift keying (CPFSK). The implementation of the modulation format uses a unique combination of a limiter/discriminator followed by an accumulator to determine transmitted phase. An important feature of the modulation scheme is the way coding is applied to efficiently gain back the performance lost by the close spacing of the phase points