Implementation of Low Power and Area Efficient 2-Bit/Step Asynchronous SAR ADC using Successively Activated Comparators

A low power (0.4-09V) 2-Bit/Step successive approximation register (SAR) analog to digital converter (ADC) is conferred. A 2-Bit/Step operation technique is proposed which implementing a dynamic threshold configuring comparator instead of number of digital to analog converters (DACs). Area and power is reduced by successively activated comparators. Here the second comparator is activated reflecting the preceding comparator’s results. Because the second comparator threshold is configured dynamically for every cycle, only two comparators are required instead of three. By successively activating the comparators, the number of DAC settling is halved, so the power and area overhead is very small and the performance will be increased. The proposed ADC was implemented in a 90nm technology achieved a gain of 35.4 db, power of 0.89 ?w and the conversion time of 0.32ns with a supply voltage of 0.4v. The total core area of this ADC is 7.74 ?m2

Design of Power Management Integrated Circuits and High-Performance ADCs

A battery-powered system has widely expanded its applications to implantable medical devices (IMDs) and portable electronic devices. Since portable devices or IMDs operate in the energy-constrained environment, their low-power operations in combination with efficiently sourcing energy to them are key problems to extend device life. This research proposes novel circuit techniques for two essential functions of a power receiving unit (PRU) in the energy-constrained environment, which are power management and signal processing. The first part of this dissertation discusses power management integrated circuits for a PRU. From a power management perspective, the most critical two circuit blocks are a front-end rectifier and a battery charger. The front-end CMOS active rectifier converts transmitted AC power into DC power. High power conversion efficiency (PCE) is required to reduce power loss during the power transfer, and high voltage conversion ratio (VCR) is required for the rectifier to enable low-voltage operations. The proposed 13.56-MHz CMOS active rectifier presents low-power circuit techniques for comparators and controllers to reduce increasing power loss of an active diode with offset/delay calibration. It is implemented with 5-V devices of a 0.35 µm CMOS process to support high voltage. A peak PCE of 89.0%, a peak VCR of 90.1%, and a maximum output power of 126.7 mW are measured for 200Ω loading. The linear battery charger stores the converted DC power into a battery. Since even small power saving can be enough to run the low-power PRU, a battery charger with low IvQ is desirable. The presented battery charger is based on a single amplifier for regulation and the charging phase transition from the constant-current (CC) phase to the constant-voltage (CV) phase. The proposed unified amplifier is based on stacked differential pairs which share the bias current. Its current-steering property removes multiple amplifiers for regulation and the CC-CV transition, and achieves high unity-gain loop bandwidth for fast regulation. The charger with the maximum charging current of 25 mA is implemented in 0.35 µm CMOS. A peak charger efficiency of 94% and average charger efficiency of 88% are achieved with an 80-mAh Li-ion polymer battery. The second part of this dissertation focuses on analog-to-digital converters (ADCs). From a signal processing perspective, an ADC is one of the most important circuit blocks in the PRU. Hence, an energy-efficient ADC is essential in the energy-constrained environment. A pipelined successive approximation register (SAR) ADC has good energy efficiency in a design space of moderate-to-high speeds and resolutions. Process-Voltage-Temperature variations of a dynamic amplifier in the pipelined-SAR ADC is a key design issue. This research presents two dynamic amplifier architectures for temperature compensation. One is based on a voltage-to-time converter (VTC) and a time-to-voltage converter (TVC), and the other is based on a temperature-dependent common-mode detector. The former amplifier is adopted in a 13-bit 10-50 MS/s subranging pipelined-SAR ADC fabricated in 0.13-µm CMOS. The ADC can operate under the power supply voltage of 0.8-1.2 V. Figure-of-Merits (FoMs) of 4-11.3 fJ/conversion-step are achieved. The latter amplifier is also implemented in 0.13-µm CMOS, consuming 0.11 mW at 50 MS/s. Its measured gain variation is 2.1% across the temperature range of -20°C to 85 °C

Integrated Circuits and Systems for Smart Sensory Applications

Connected intelligent sensing reshapes our society by empowering people with increasing new ways of mutual interactions. As integration technologies keep their scaling roadmap, the horizon of sensory applications is rapidly widening, thanks to myriad light-weight low-power or, in same cases even self-powered, smart devices with high-connectivity capabilities. CMOS integrated circuits technology is the best candidate to supply the required smartness and to pioneer these emerging sensory systems. As a result, new challenges are arising around the design of these integrated circuits and systems for sensory applications in terms of low-power edge computing, power management strategies, low-range wireless communications, integration with sensing devices. In this Special Issue recent advances in application-specific integrated circuits (ASIC) and systems for smart sensory applications in the following five emerging topics: (I) dedicated short-range communications transceivers; (II) digital smart sensors, (III) implantable neural interfaces, (IV) Power Management Strategies in wireless sensor nodes and (V) neuromorphic hardware

메모리 어플리케이션을 위한 빠른 과도 응답 성능을 가지는 디지털 낮은 드롭아웃 레귤레이터 설계

학위논문(박사) -- 서울대학교대학원 : 공과대학 전기·정보공학부, 2023. 2. 정덕균.In this dissertation, the design of a fast transient response digital low-dropout regulator (DLDO) applicable to next-generation memory systems is discussed. Recent technologies in memory systems mainly aim at high power density and fast data rate. Accordingly, the need for a power converter withstanding a large amount of load current change in a short period is increased. Accordingly, a solution for compensating for a voltage drop that causes significant damage to a memory data input/output is searched according to a periodic clock signal. With this situation, two structures that achieve fast transient response performance under the constraints of memory systems are proposed. To mitigate the transient response degradation under slow external clock conditions, an adaptive two-step search algorithm with event-driven approaches DLDO is proposed. The technique solves the limitations of loop operation time dependent on slow external clocks through a ring-amplifier-based continuous-time comparator. Also, shift register is designed as a circular structure with centralized control of each register to reduce the cost. Finally, the remaining regulation error is controlled by an adaptive successive approximation algorithm to minimize the settling time. Fast recovery and settling time are shown through the measurement of the prototype chip implemented by the 40-nm CMOS process. Next, a digital low dropout regulator for ultra-fast transient response is designed. A slope-detector-based coarse controller to detect, compensate, and correct load current changes occurring at every rising or falling edge of tens to hundreds of megahertz clocks is proposed. Compensation efficiency is increased by the method according to the degree of change in load voltage over time. Furthermore, the LUT-based shift register enables the fast loop response speed of the DLDO. Finally, a bidirectional latch-based driver with fast settling speed and high resolution are proposed. The prototype chip is implemented with a 40-nm CMOS process and achieves effective load voltage recovery through fast transient response performance even with low load capacitance.본 논문은 차세대 메모리 시스템에 적용 가능한 빠른 과도 응답 성능을 가지는 디지탈 낮은 드롭아웃 레귤레이터의 설계에 대해 기술한다. 메모리 시스템의 최근 기술들은 높은 전력 밀도와 빠른 데이터 속도를 주된 목표로 하며 이에 맞추어 단기간, 많은 양의 부하 전류 변화를 견디는 파워 컨버터의 필요성이 높아지고 있다. 이에 주기적인 클락 신호에 따라 메모리 데이터 입출력에 유의미한 손상을 발생시키는 전압 강하를 보상하는 해결 방안을 탐색한다. 이를 통해 메모리 시스템이 가지는 제약조건 하에서 빠른 과도 응답 성능을 달성하는 두 가지 구조를 제안한다. 첫 번째 시연으로서, 느린 외부 클락 조건에서 유발되는 디지탈 낮은 드롭아웃 레귤레이터의 과도 응답 성능 저하를 완화시키기 위한 이벤트 주도 방식의 적응형 두 단계 서치 기술을 제안한다. 본 기술은 느린 외부클락에 의존한 루프 동작 시간의 한계를 고리 증폭기 기반 연속 시간 비교기를 통해 해결한다. 또한 자리 이동 레지스터의 구현에 소모되는 비용을 줄이고자 각 레지스터의 제어 장치를 중앙으로 집적시킨 순환형 구조로 설계되었다. 마지막으로 남아있는 조정 에러는 적응방식의 축차 비교형 알고리즘으로 제어하여 교정에 필요한 시간을 최소화하였다. 40-nm CMOS 공정으로 구현된 프로토타입 칩의 측정을 통해 부하 전압의 빠른 회복 속도와 정정시간을 보임을 확인하였다. 두 번째 시연으로서, 초고속 과도 응답 환경에 적합한 디지털 낮은 드롭아웃 레귤레이터가 설계되었다. 수십~수백 메가헤르쯔 클락의 상승 또는 하강 엣지마다 발생하는 부하 전류 변화를 탐지하고 보상하고 정정하기 위해 기울기 탐지기 기반 coarse 제어기 기술을 제안한다. 시간에 따른 부하 전압 변화의 정도에 따라 차등 보상하는 알고리즘을 적용함으로써 보상 효율을 높였다. 나아가 순람표 기반 자리이동 레지스터는 부하 전류 과도 상태 이후 디지탈 레귤레이터의 빠른 루프 응답 속도를 가능케 하였다. 마지막으로 남은 조정 에러를 제어하는데 있어서 기존 자리이동 레지스터 방식에서 벗어나 빠른 수렴 속도와 높은 해상도를 가지는 양방향 래치 기반 드라이버가 제안되었다. 해당 프로토타입 칩은 40-nm CMOS 공정으로 구현되었으며, 낮은 부하 축전용량에도 빠른 과도 응답 성능을 통해 효과적인 부하 전압 회복을 이루어 내었다.CHAPTER 1 INTRODUCTION 1 1.1 MOTIVATION 1 1.2 VARIOUS TYPES OF LDO 4 1.2.1 ANALOG LDO VS. DIGITAL LDO 4 1.2.2 CAP LDO VS. CAP-LESS LDO 6 1.3 THESIS ORGANIZATION 8 CHAPTER 2 BACKGROUNDS ON DIGITAL LOW-DROPOUT REGULATOR 9 2.1 BASIC DIGITAL LOW-DROPOUT REGULATOR 9 2.2 FAST TRANSIENT RESPONSE LOW-DROPOUT REGULATOR 12 2.2.1 RESPONSE TIME 13 2.2.1 SETTLING TIME 20 2.3 VARIOUS METHODS FOR IMPLEMENT FAST TRANSIENT DIGITAL LDO 21 2.3.1 EVENT-DRIVEN DIGITAL LDO 21 2.3.2 FEEDFORWARD CONTROL 23 2.3.3 COMPUTATIONAL DIGITAL LDO 25 2.4 DESIGN POINTS OF FAST TRANSIENT RESPONSE DIGITAL LDO 27 CHAPTER 3 A FAST DROOP-RECOVERY EVENT-DRIVEN DIGITAL LDO WITH ADAPTIVE LINEAR/BINARY TWO-STEP SEARCH FOR VOLTAGE REGULATION IN ADVANCED MEMORY 29 3.1 OVERVIEW 29 3.2 PROPOSED DIGITAL LDO 32 3.2.1 MOTIVATION 32 3.2.2 ALSC WITH TWO-DIMENSIONAL CIRCULAR SHIFTING REGISTER 36 3.2.3 SBSC WITH SUBRANGE SUCCESSIVE-APPROXIMATION REGISTER 39 3.2.4 STABILITY ANALYSIS 41 3.3 CIRCUIT IMPLEMENTATION 44 3.3.1 TIME-INTERLEAVED RING-AMPLIFIER-BASED COMPARATOR 44 3.3.2 ASYNCHRONOUS 2D CIRCULAR SHIFTING REGISTER 49 3.3.3 SUBRANGE SUCCESSIVE APPROXIMATION REGISTER 51 3.4 MESUREMENT RESULTS 54 CHAPTER 4 A FAST TRANSIENT RESPONSE DIGITAL LOW-DROPOUT REGULATOR WITH SLOPE-DETECTOR-BASED MULTI-STEP CONTROL FOR DIGITAL LOAD APPLICATION 62 4.1 OVERVIEW 62 4.2 PROPOSED DIGITAL LDO 64 4.2.1 MOTIVATION 64 4.2.2 ARCHITECTURE OF DIGITAL LDO 66 4.2.3 SLEW-RATE DEPENDENT COARSE-CONTROL LOOP 69 4.2.4 FINE-CONTROL LOOP 72 4.2.5 CONTROL FOR LOAD-TRANSIENT RESPONSE 74 4.3 CIRCUIT IMPLEMENTATION 77 4.3.1 COMPARATOR-TRIGGERED OSCILLATOR DESIGN 77 4.3.2 SLOPE DETECTOR DESIGN 81 4.3.3 LUT-BASED SHIFT REGISTER DESIGN 84 4.3.4 BI-DIRECTIONAL LATCH-BASED DRIVER DESIGN 86 4.4 MEASUREMENT(SIMULATION) RESULTS 90 CHAPTER 5 CONCLUSION 95 BIBLIOGRAPHY 97 초 록 109박

Next generation analog-to-digital conversion using time-based encoding and digital synthesis techniques

The internet-of-things is a growing market segment which is based on an arrayof portable communication devices with high power efficiency. Advanced semiconductortechnology can easily improve their digital performance, but the samecannot be said for the analog blocks which are vital to their operation. Highperformance analog circuits continue to use conventional design techniques andarchitectures at the expense of power efficiency. Deeply scaled CMOS exaggeratesthis trade-off, opening the door for novel system techniques that take advantage ofthe digital nature of sub-micron transistors. This research focuses on two highlydigital ADCs which can mitigate the short channel effects of limited output swingand low intrinsic gain while also benefiting from process scaling.First, a multi-domain ADC is used to perform quantization on both voltageand time domain signals, relaxing the power-performance trade-off. This hybridapproach can lead to a high resolution, high efficiency data converter in scaledprocess. A prototype ADC was fabricated in 180nm CMOS, showing an SNDRof 73 dB, operating at 20 MHz sampling frequency, with a power consumption of1.28 mW.Next, an automated synthesis process is used to automatically generate a highspeed VCO-based quantizer from verilog code. Stochastic spatial averaging iscombined with a high speed open-loop noise-shaping quantizer to provide enhancedresolution in the presence of device mismatch. Simulation results of a prototypeADC in 180nm CMOS shows an SNDR of 49 dB, operating at 800 MHz samplingfrequency and 50 MHz signal bandwidth.Keywords: data converter, synthesis, verilog, ADC, SAR, TD

A Low-Power, Reconfigurable, Pipelined ADC with Automatic Adaptation for Implantable Bioimpedance Applications

Biomedical monitoring systems that observe various physiological parameters or electrochemical reactions typically cannot expect signals with fixed amplitude or frequency as signal properties can vary greatly even among similar biosignals. Furthermore, advancements in biomedical research have resulted in more elaborate biosignal monitoring schemes which allow the continuous acquisition of important patient information. Conventional ADCs with a fixed resolution and sampling rate are not able to adapt to signals with a wide range of variation. As a result, reconfigurable analog-to-digital converters (ADC) have become increasingly more attractive for implantable biosensor systems. These converters are able to change their operable resolution, sampling rate, or both in order convert changing signals with increased power efficiency. Traditionally, biomedical sensing applications were limited to low frequencies. Therefore, much of the research on ADCs for biomedical applications focused on minimizing power consumption with smaller bias currents resulting in low sampling rates. However, recently bioimpedance monitoring has become more popular because of its healthcare possibilities. Bioimpedance monitoring involves injecting an AC current into a biosample and measuring the corresponding voltage drop. The frequency of the injected current greatly affects the amplitude and phase of the voltage drop as biological tissue is comprised of resistive and capacitive elements. For this reason, a full spectrum of measurements from 100 Hz to 10-100 MHz is required to gain a full understanding of the impedance. For this type of implantable biomedical application, the typical low power, low sampling rate analog-to-digital converter is insufficient. A different optimization of power and performance must be achieved. Since SAR ADC power consumption scales heavily with sampling rate, the converters that sample fast enough to be attractive for bioimpedance monitoring do not have a figure-of-merit that is comparable to the slower converters. Therefore, an auto-adapting, reconfigurable pipelined analog-to-digital converter is proposed. The converter can operate with either 8 or 10 bits of resolution and with a sampling rate of 0.1 or 20 MS/s. Additionally, the resolution and sampling rate are automatically determined by the converter itself based on the input signal. This way, power efficiency is increased for input signals of varying frequency and amplitude

DESIGN OF LOW-POWER LOW-VOLTAGE SUCCESSIVE-APPROXIMATION ANALOG-TO-DIGITAL CONVERTERS

Ph.DDOCTOR OF PHILOSOPH

Ultra Low Power Circuits for Internet of Things and Deep Learning Accelerator Design with In-Memory Computing

Collecting data from environment and converting gathered data into information is the key idea of Internet of Things (IoT). Miniaturized sensing devices enable the idea for many applications including health monitoring, industrial sensing, and so on. Sensing devices typically have small form factor and thus, low battery capacity, but at the same time, require long life time for continuous monitoring and least frequent battery replacement. This thesis introduces three analog circuit design techniques featuring ultra-low power consumption for such requirements: (1) An ultra-low power resistor-less current reference circuit, (2) A 110nW resistive frequency locked on-chip oscillator as a timing reference, (3) A resonant current-mode wireless power receiver and battery charger for implantable systems. Raw data can be efficiently transformed into useful information using deep learning. However deep learning requires tremendous amount of computation by its nature, and thus, an energy efficient deep learning hardware is highly demanded to fully utilize this algorithm in various applications. This thesis also presents a pulse-width based computation concept which utilizes in-memory computing of SRAM.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttps://deepblue.lib.umich.edu/bitstream/2027.42/144173/1/myungjun_1.pd

High Temperature Silicon Carbide Mixed-signal Circuits for Integrated Control and Data Acquisition

Wide bandgap semiconductor materials such as gallium nitride (GaN) and silicon carbide have grown in popularity as a substrate for power devices for high temperature and high voltage applications over the last two decades. Recent research has been focused on the design of integrated circuits for protection and control in these wide bandgap materials. The ICs developed in SiC and GaN can not only complement the power devices in high voltage and high frequency applications, but can also be used for standalone high temperature control and data acquisition circuitry. This dissertation work aims to explore the possibilities in high temperature and wide bandgap circuit design by developing a host of mixed-signal circuits that can be used for control and data acquisition. These include a family of current-mode signal processing circuits, general purpose amplifiers and comparators, and 8-bit data converters. The signal processing circuits along with amplifiers and comparators are then used to develop an integrated mixed-signal controller for a DC-DC flyback converter in a microinverter application. The 8-bit SAR ADC and the 8-bit R-2R ladder DAC open up the possibility of a remote data acquisition and control system in high temperature environments. The circuits and systems presented here offer a gateway to great opportunities in high temperature and power electronics ICs in SiC