Research Proposal for an Experiment to Search for the Decay {\mu} -> eee

We propose an experiment (Mu3e) to search for the lepton flavour violating decay mu+ -> e+e-e+. We aim for an ultimate sensitivity of one in 10^16 mu-decays, four orders of magnitude better than previous searches. This sensitivity is made possible by exploiting modern silicon pixel detectors providing high spatial resolution and hodoscopes using scintillating fibres and tiles providing precise timing information at high particle rates.Comment: Research proposal submitted to the Paul Scherrer Institute Research Committee for Particle Physics at the Ring Cyclotron, 104 page

The experimental set-up of the RIB in-flight facility EXOTIC

We describe the experimental set-up of the Radioactive Ion Beam (RIB) in-flight facility EXOTIC consisting of: (a) two position-sensitive Parallel Plate Avalanche Counters (PPACs), dedicated to the event-by-event tracking of the produced RIBs and to time of flight measurements and (b) the new high-granularity compact telescope array EXPADES (EXotic PArticle DEtection System), designed for nuclear physics and nuclear astrophysics experiments employing low-energy light RIBs. EXPADES consists of eight ΔE–Eres telescopes arranged in a cylindrical configuration around the target. Each telescope is made up of two Double Sided Silicon Strip Detectors (DSSSDs) with a thickness of 40/60 μm and 300 μm for the ΔE and Eres layer, respectively. Additionally, eight ionization chambers were constructed to be used as an alternative ΔE stage or, in conjunction with the entire DSSSD array, to build up more complex triple telescopes. New low-noise multi-channel charge-sensitive preamplifiers and spectroscopy amplifiers, associated with constant fraction discriminators, peak-and-hold and Time to Amplitude Converter circuits were developed for the electronic readout of the ΔE stage. Application Specific Integrated Circuit-based electronics was employed for the treatment of the Eres signals. An 8-channel, 12-bit multi-sampling 50 MHz Analog to Digital Converter, a Trigger Supervisor Board for handling the trigger signals of the whole experimental set-up and an ad hoc data acquisition system were also developed. The performance of the PPACs, EXPADES and of the associated electronics was obtained offline with standard α calibration sources and in-beam by measuring the scattering process for the systems 17O+58Ni and 17O+208Pb at incident energies around their respective Coulomb barriers and, successively, during the first experimental runs with the RIBs of the EXOTIC facility

Development of low power front-end electronics for monolithic Active Pixel Sensors

The next generation High Energy Physics experiments require the development of novel radiation sensor technologies adequate to cover very large areas and suitable for extreme radiation conditions. In this field, thanks to its incomparable properties, silicon is still nowadays the dominant semiconductor used to build tracking detectors for ionizing particles. In several experiments all around the world, it is used to cover very large areas with the intent of tracking and identifying the crossing particles generated during the experiments. Different topologies of silicon sensors can be used for these applications but those commonly used for high rate environments are pixel sensors. This research activity focuses mainly on two particular types of these sensors: hybrid pixel sensors and monolithic active pixel sensors (MAPS). Modern detectors use intensively hybrid sensors due to their excellent properties. This technology indeed allows to develop sensor and electronics separately allowing a very effective optimization of each part of the device increasing in this way its versatility and allowing to meet most of the requirements of the new experiments. The hybrid technology is fast and also suitable for working in high radiation environments thanks to the use of high electrical fields for the charge collection. However, the production cost of those devices is much higher than other sensors because two different devices are required and also due to the additional cost for the bump bonding used to interconnect sensor and readout ASIC. On the other hand, monolithic sensors are based on the implementation of sensor and readout electronics in the same silicon wafer. Therefore this technology is much cheaper than the hybrid solution and allows to reduce significantly contribution of the detector to the material budget. However, traditional MAPS have some limitations in terms of speed, extension of the depletion volume, signal to noise ratio and radiation tolerance which make those devices unsuitable for the extreme environment of the new experiments. In this context, this work presents the development of a full depleted monolithic pixel sensor with a thickness of 300 μm which aims to overcome the main limitations of the conventional monolithics. The proposed device has properties similar to the hybrid solution but benefits of the low production cost typical of monolithics. The development of the device has been carried out by the collaboration between the University of Trento, INFN of Padova and INFN of Torino. In addition, thanks to the close collaboration with the experts of a silicon foundry, it was possible a tailored fabrication of the devices. Two ASICs of 2 mm × 2 mm have been developed in a customized double-sided CMOS technology with transistors of 1.2 V and 6 metal layers. The devices have been submitted to the foundry for fabrication on April 2016 and have been delivered for the testing phase on May 2017. A patent for the device has been granted in 2017. In the first part of this work, the state of the art of monolithics is given where hybrid and monolithics are compared. Then, the novel sensor is described in detail with the support of simulations to motivate important solutions adopted to reach the full depletion and to implement PMOS transistors avoiding the competitive charge collection. Some studies to highlight the huge limitations on design MAPS without access to the process data are presented to introduce the custom process used for the development of the device. The first ASIC is a test chip designed to contain test devices used to study important properties of the sensor like depletion and punch-through voltage. All the devices implemented in this ASIC are described in detail motivating the design solutions adopted. The second ASIC is the complete monolithic sensor called MATISSE (Monolithic AcTIve pixel SenSor Electronics) made by a matrix array of 24 × 24 pixels readout with the snapshot shutter technique. Each pixel is 50 μm×50 μm and is based on the same novel sensor. The chip is described in detail with the support of simulation results to motivate some strategies adopted during the design. Special emphasis is placed on the strategy used to design the readout chain with a wide output swing, low noise and excellent linearity with the use of high threshold transistors. Last but not least, in the last chapter the results collected during the characterization of the two prototypes for different wafers are presented. The data acquisition system developed is described and the electrical tests and measurements with active sources and lasers are reported. The measurements performed on the test structures show unwanted trapped charge in the backside oxide. The phenomenon is described putting special attention on an irradiation campaign performed in the test diodes to confirm and quantify this effect. All the results presented in this work aim to prove the device full depletion and the excellent properties of the embedded electronics implemented in these first prototypes

Feasibility of Geiger-mode avalanche photodiodes in CMOS standard technologies for tracker detectors

The next generation of particle colliders will be characterized by linear lepton colliders, where the collisions between electrons and positrons will allow to study in great detail the new particle discovered at CERN in 2012 (presumably the Higgs boson). At present time, there are two alternative projects underway, namely the ILC (International Linear Collider) and CLIC (Compact LInear Collider). From the detector point of view, the physics aims at these particle colliders impose such extreme requirements, that there is no sensor technology available in the market that can fulfill all of them. As a result, several new detector systems are being developed in parallel with the accelerator. This thesis presents the development of a GAPD (Geiger-mode Avalanche PhotoDiode) pixel detector aimed mostly at particle tracking at future linear colliders. GAPDs offer outstanding qualities to meet the challenging requirements of ILC and CLIC, such as an extraordinary high sensitivity, virtually infinite gain and ultra-fast response time, apart from compatibility with standard CMOS technologies. In particular, GAPD detectors enable the direct conversion of a single particle event onto a CMOS digital pulse in the sub-nanosecond time scale without the utilization of either preamplifiers or pulse shapers. As a result, GAPDs can be read out after each single bunch crossing, a unique quality that none of its competitors can offer at the moment. In spite of all these advantages, GAPD detectors suffer from two main problems. On the one side, there exist noise phenomena inherent to the sensor, which induce noise pulses that cannot be distinguished from real particle events and also worsen the detector occupancy to unacceptable levels. On the other side, the fill-factor is too low and gives rise to a reduced detection efficiency. Solutions to the two problems commented that are compliant with the severe specifications of the next generation of particle colliders have been thoroughly investigated. The design and characterization of several single pixels and small arrays that incorporate some elements to reduce the intrinsic noise generated by the sensor are presented. The sensors and the readout circuits have been monolithically integrated in a conventional HV-CMOS 0.35 μm process. Concerning the readout circuits, both voltage-mode and current-mode options have been considered. Moreover, the time-gated operation has also been explored as an alternative to reduce the detected sensor noise. The design and thorough characterization of a prototype GAPD array, also monolithically integrated in a conventional 0.35 μm HV-CMOS process, is presented in the thesis as well. The detector consists of 10 rows x 43 columns of pixels, with a total sensitive area of 1 mm x 1 mm. The array is operated in a time-gated mode and read out sequentially by rows. The efficiency of the proposed technique to reduce the detected noise is shown with a wide variety of measurements. Further improved results are obtained with the reduction of the working temperature. Finally, the suitability of the proposed detector array for particle detection is shown with the results of a beam-test campaign conducted at CERN-SPS (European Organization for Nuclear Research-Super Proton Synchrotron). Apart from that, a series of additional approaches to improve the performance of the GAPD technology are proposed. The benefits of integrating a GAPD pixel array in a 3D process in terms of overcoming the fill-factor limitation are examined first. The design of a GAPD detector in the Global Foundries 130 nm/Tezzaron 3D process is also presented. Moreover, the possibility to obtain better results in light detection applications by means of the time-gated operation or correction techniques is analyzed too.Aquesta tesi presenta el desenvolupament d’un detector de píxels de GAPDs (Geiger-mode Avalanche PhotoDiodes) dedicat principalment a rastrejar partícules en futurs col•lisionadors lineals. Els GAPDs ofereixen unes qualitats extraordinàries per satisfer els requisits extremadament exigents d’ILC (International Linear Collider) i CLIC (Compact LInear Collider), els dos projectes per la propera generació de col•lisionadors que s’han proposat fins a dia d’avui. Entre aquestes qualitats es troben una sensibilitat extremadament elevada, un guany virtualment infinit i una resposta molt ràpida, a part de ser compatibles amb les tecnologies CMOS estàndard. En concret, els detectors de GAPDs fan possible la conversió directa d’un esdeveniment generat per una sola partícula en un senyal CMOS digital amb un temps inferior al nanosegon. Com a resultat d’aquest fet, els GAPDs poden ser llegits després de cada bunch crossing (la col•lisió de les partícules), una qualitat única que cap dels seus competidors pot oferir en el moment actual. Malgrat tots aquests avantatges, els detectors de GAPDs pateixen dos grans problemes. D’una banda, existeixen fenòmens de soroll inherents al sensor, els quals indueixen polsos de soroll que no poden ser distingits dels esdeveniments reals generats per partícules i que a més empitjoren l’ocupació del detector a nivells inacceptables. D’altra banda, el fill-factor (és a dir, l’àrea sensible respecte l’àrea total) és molt baix i redueix l’eficiència detectora. En aquesta tesi s’han investigat solucions als dos problemes comentats i que a més compleixen amb les especificacions altament severes dels futurs col•lisionadors lineals. El detector de píxels de GAPDs, el qual ha estat monolíticament integrat en un procés HV-CMOS estàndard de 0.35 μm, incorpora circuits de lectura en mode voltatge que permeten operar el sensor en l’anomenat mode time-gated per tal de reduir el soroll detectat. L’eficiència de la tècnica proposada queda demostrada amb la gran varietat d’experiments que s’han dut a terme. Els resultats del beam-test dut a terme al CERN indiquen la capacitat del detector de píxels de GAPDs per detectar partícules altament energètiques. A banda d’això, també s’han estudiat els beneficis d’integrar un detector de píxels de GAPDs en un procés 3D per tal d’incrementar el fill-factor. L’anàlisi realitzat conclou que es poden assolir fill-factors superiors al 90%

Technical design of the phase I Mu3e experiment

The Mu3e experiment aims to find or exclude the lepton flavour violating decay μ→eee at branching fractions above 10−16. A first phase of the experiment using an existing beamline at the Paul Scherrer Institute (PSI) is designed to reach a single event sensitivity of 2⋅10−15. We present an overview of all aspects of the technical design and expected performance of the phase I Mu3e detector. The high rate of up to 108 muon decays per second and the low momenta of the decay electrons and positrons pose a unique set of challenges, which we tackle using an ultra thin tracking detector based on high-voltage monolithic active pixel sensors combined with scintillating fibres and tiles for precise timing measurements

Technical design of the phase I Mu3e experiment

The Mu3e experiment aims to find or exclude the lepton flavour violating decay at branching fractions above . A first phase of the experiment using an existing beamline at the Paul Scherrer Institute (PSI) is designed to reach a single event sensitivity of . We present an overview of all aspects of the technical design and expected performance of the phase I Mu3e detector. The high rate of up to muon decays per second and the low momenta of the decay electrons and positrons pose a unique set of challenges, which we tackle using an ultra thin tracking detector based on high-voltage monolithic active pixel sensors combined with scintillating fibres and tiles for precise timing measurements

Technical design of the phase I Mu3e experiment

The Mu3e experiment aims to find or exclude the lepton flavour violating decay $\mu \rightarrow eee$ at branching fractions above $10^{-16}$. A first phase of the experiment using an existing beamline at the Paul Scherrer Institute (PSI) is designed to reach a single event sensitivity of $2\cdot 10^{-15}$. We present an overview of all aspects of the technical design and expected performance of the phase~I Mu3e detector. The high rate of up to $10^{8}$ muon decays per second and the low momenta of the decay electrons and positrons pose a unique set of challenges, which we tackle using an ultra thin tracking detector based on high-voltage monolithic active pixel sensors combined with scintillating fibres and tiles for precise timing measurements.Comment: 114 pages, 185 figures. Submitted to Nuclear Instruments and Methods A. Edited by Frank Meier Aeschbacher This version has many enhancements for better readability and more detail