Memory built-in self-repair and correction for improving yield: a review

Nanometer memories are highly prone to defects due to dense structure, necessitating memory built-in self-repair as a must-have feature to improve yield. Today’s system-on-chips contain memories occupying an area as high as 90% of the chip area. Shrinking technology uses stricter design rules for memories, making them more prone to manufacturing defects. Further, using 3D-stacked memories makes the system vulnerable to newer defects such as those coming from through-silicon-vias (TSV) and micro bumps. The increased memory size is also resulting in an increase in soft errors during system operation. Multiple memory repair techniques based on redundancy and correction codes have been presented to recover from such defects and prevent system failures. This paper reviews recently published memory repair methodologies, including various built-in self-repair (BISR) architectures, repair analysis algorithms, in-system repair, and soft repair handling using error correcting codes (ECC). It provides a classification of these techniques based on method and usage. Finally, it reviews evaluation methods used to determine the effectiveness of the repair algorithms. The paper aims to present a survey of these methodologies and prepare a platform for developing repair methods for upcoming-generation memories

Fault-tolerance techniques for hybrid CMOS/nanoarchitecture

The authors propose two fault-tolerance techniques for hybrid CMOS/nanoarchitecture implementing logic functions as look-up tables. The authors compare the efficiency of the proposed techniques with recently reported methods that use single coding schemes in tolerating high fault rates in nanoscale fabrics. Both proposed techniques are based on error correcting codes to tackle different fault rates. In the first technique, the authors implement a combined two-dimensional coding scheme using Hamming and Bose-Chaudhuri-Hocquenghem (BCH) codes to address fault rates greater than 5. In the second technique, Hamming coding is complemented with bad line exclusion technique to tolerate fault rates higher than the first proposed technique (up to 20). The authors have also estimated the improvement that can be achieved in the circuit reliability in the presence of Don-t Care Conditions. The area, latency and energy costs of the proposed techniques were also estimated in the CMOS domain

Self-Healing Cellular Automata to Correct Soft Errors in Defective Embedded Program Memories

Static Random Access Memory (SRAM) cells in ultra-low power Integrated Circuits (ICs) based on nanoscale Complementary Metal Oxide Semiconductor (CMOS) devices are likely to be the most vulnerable to large-scale soft errors. Conventional error correction circuits may not be able to handle the distributed nature of such errors and are susceptible to soft errors themselves. In this thesis, a distributed error correction circuit called Self-Healing Cellular Automata (SHCA) that can repair itself is presented. A possible way to deploy a SHCA in a system of SRAM-based embedded program memories (ePM) for one type of chip multi-processors is also discussed. The SHCA is compared with conventional error correction approaches and its strengths and limitations are analyzed

NASA space station automation: AI-based technology review

Research and Development projects in automation for the Space Station are discussed. Artificial Intelligence (AI) based automation technologies are planned to enhance crew safety through reduced need for EVA, increase crew productivity through the reduction of routine operations, increase space station autonomy, and augment space station capability through the use of teleoperation and robotics. AI technology will also be developed for the servicing of satellites at the Space Station, system monitoring and diagnosis, space manufacturing, and the assembly of large space structures

Engineering study for a mass memory system for advanced spacecrafts Final report, 1 Dec. 1969 - 1 Jul. 1970

Mass memory system for advanced spacecraf