Adaptation in Standard CMOS Processes with Floating Gate Structures and Techniques

We apply adaptation into ordinary circuits and systems to achieve high performance, high quality results. Mismatch in manufactured VLSI devices has been the main limiting factor in quality for many analog and mixed-signal designs. Traditional compensation methods are generally costly. A few examples include enlarging the device size, averaging signals, and trimming with laser. By applying floating gate adaptation to standard CMOS circuits, we demonstrate here that we are able to trim CMOS comparator offset to a precision of 0.7mV, reduce CMOS image sensor fixed-pattern noise power by a factor of 100, and achieve 5.8 effective number of bits (ENOB) in a 6-bit flash analog-to-digital converter (ADC) operating at 750MHz. The adaptive circuits generally exhibit special features in addition to an improved performance. These special features are generally beyond the capabilities of traditional CMOS design approaches and they open exciting opportunities in novel circuit designs. Specifically, the adaptive comparator has the ability to store an accurate arbitrary offset, the image sensor can be set up to memorize previously captured scenes like a human retina, and the ADC can be configured to adapt to the incoming analog signal distribution and perform an efficient signal conversion that minimizes distortion and maximizes output entropy

Polarization Imaging Sensors in Advanced Feature CMOS Technologies

The scaling of CMOS technology, as predicted by Moore\u27s law, has allowed for realization of high resolution imaging sensors and for the emergence of multi-mega-pixel imagers. Designing imaging sensors in advanced feature technologies poses many challenges especially since transistor models do not accurately portray their performance in these technologies. Furthermore, transistors fabricated in advanced feature technologies operate in a non-conventional mode known as velocity saturation. Traditionally, analog designers have been discouraged from designing circuits in this mode of operation due to the low gain properties in single transistor amplifiers. Nevertheless, velocity saturation will become even more prominent mode of operation as transistors continue to shrink and warrants careful design of circuits that can exploit this mode of operation. In this research endeavor, I have utilized velocity saturation mode of operation in order to realize low noise imaging sensors. These imaging sensors incorporate low noise analog circuits at the focal plane in order to improve the signal to noise ratio and are fabricated in 0.18 micron technology. Furthermore, I have explored nanofabrication techniques for realizing metallic nanowires acting as polarization filters. These nanoscopic metallic wires are deposited on the surface of the CMOS imaging sensor in order to add polarization sensitivity to the CMOS imaging sensor. This hybrid sensor will serve as a test bed for exploring the next generation of low noise and highly sensitive polarization imaging sensors

CMOS IMAGE SENSORS FOR LAB-ON-A-CHIP MICROSYSTEM DESIGN

The work described herein serves as a foundation for the development of CMOS imaging in lab-on-a-chip microsystems. Lab-on-a-chip (LOC) systems attempt to emulate the functionality of a cell biology lab by incorporating multiple sensing modalidites into a single microscale system. LOC are applicable to drug development, implantable sensors, cell-based bio-chemical detectors and radiation detectors. The common theme across these systems is achieving performance under severe resource constraints including noise, bandwidth, power and size. The contributions of this work are in the areas of two core lab-on-a-chip imaging functions: object detection and optical measurements

Low-power CMOS digital-pixel Imagers for high-speed uncooled PbSe IR applications

This PhD dissertation describes the research and development of a new low-cost medium wavelength infrared MWIR monolithic imager technology for high-speed uncooled industrial applications. It takes the baton on the latest technological advances in the field of vapour phase deposition (VPD) PbSe-based medium wavelength IR (MWIR) detection accomplished by the industrial partner NIT S.L., adding fundamental knowledge on the investigation of novel VLSI analog and mixed-signal design techniques at circuit and system levels for the development of the readout integrated device attached to the detector. The work supports on the hypothesis that, by the use of the preceding design techniques, current standard inexpensive CMOS technologies fulfill all operational requirements of the VPD PbSe detector in terms of connectivity, reliability, functionality and scalability to integrate the device. The resulting monolithic PbSe-CMOS camera must consume very low power, operate at kHz frequencies, exhibit good uniformity and fit the CMOS read-out active pixels in the compact pitch of the focal plane, all while addressing the particular characteristics of the MWIR detector: high dark-to-signal ratios, large input parasitic capacitance values and remarkable mismatching in PbSe integration. In order to achieve these demands, this thesis proposes null inter-pixel crosstalk vision sensor architectures based on a digital-only focal plane array (FPA) of configurable pixel sensors. Each digital pixel sensor (DPS) cell is equipped with fast communication modules, self-biasing, offset cancellation, analog-to-digital converter (ADC) and fixed pattern noise (FPN) correction. In-pixel power consumption is minimized by the use of comprehensive MOSFET subthreshold operation. The main aim is to potentiate the integration of PbSe-based infra-red (IR)-image sensing technologies so as to widen its use, not only in distinct scenarios, but also at different stages of PbSe-CMOS integration maturity. For this purpose, we posit to investigate a comprehensive set of functional blocks distributed in two parallel approaches: • Frame-based “Smart” MWIR imaging based on new DPS circuit topologies with gain and offset FPN correction capabilities. This research line exploits the detector pitch to offer fully-digital programmability at pixel level and complete functionality with input parasitic capacitance compensation and internal frame memory. • Frame-free “Compact”-pitch MWIR vision based on a novel DPS lossless analog integrator and configurable temporal difference, combined with asynchronous communication protocols inside the focal plane. This strategy is conceived to allow extensive pitch compaction and readout speed increase by the suppression of in-pixel digital filtering, and the use of dynamic bandwidth allocation in each pixel of the FPA. In order make the electrical validation of first prototypes independent of the expensive PbSe deposition processes at wafer level, investigation is extended as well to the development of affordable sensor emulation strategies and integrated test platforms specifically oriented to image read-out integrated circuits. DPS cells, imagers and test chips have been fabricated and characterized in standard 0.15μm 1P6M, 0.35μm 2P4M and 2.5μm 2P1M CMOS technologies, all as part of research projects with industrial partnership. The research has led to the first high-speed uncooled frame-based IR quantum imager monolithically fabricated in a standard VLSI CMOS technology, and has given rise to the Tachyon series [1], a new line of commercial IR cameras used in real-time industrial, environmental and transportation control systems. The frame-free architectures investigated in this work represent a firm step forward to push further pixel pitch and system bandwidth up to the limits imposed by the evolving PbSe detector in future generations of the device.La present tesi doctoral descriu la recerca i el desenvolupament d'una nova tecnologia monolítica d'imatgeria infraroja de longitud d'ona mitja (MWIR), no refrigerada i de baix cost, per a usos industrials d'alta velocitat. El treball pren el relleu dels últims avenços assolits pel soci industrial NIT S.L. en el camp dels detectors MWIR de PbSe depositats en fase vapor (VPD), afegint-hi coneixement fonamental en la investigació de noves tècniques de disseny de circuits VLSI analògics i mixtes pel desenvolupament del dispositiu integrat de lectura unit al detector pixelat. Es parteix de la hipòtesi que, mitjançant l'ús de les esmentades tècniques de disseny, les tecnologies CMOS estàndard satisfan tots els requeriments operacionals del detector VPD PbSe respecte a connectivitat, fiabilitat, funcionalitat i escalabilitat per integrar de forma econòmica el dispositiu. La càmera PbSe-CMOS resultant ha de consumir molt baixa potència, operar a freqüències de kHz, exhibir bona uniformitat, i encabir els píxels actius CMOS de lectura en el pitch compacte del pla focal de la imatge, tot atenent a les particulars característiques del detector: altes relacions de corrent d'obscuritat a senyal, elevats valors de capacitat paràsita a l'entrada i dispersions importants en el procés de fabricació. Amb la finalitat de complir amb els requisits previs, es proposen arquitectures de sensors de visió de molt baix acoblament interpíxel basades en l'ús d'una matriu de pla focal (FPA) de píxels actius exclusivament digitals. Cada píxel sensor digital (DPS) està equipat amb mòduls de comunicació d'alta velocitat, autopolarització, cancel·lació de l'offset, conversió analògica-digital (ADC) i correcció del soroll de patró fixe (FPN). El consum en cada cel·la es minimitza fent un ús exhaustiu del MOSFET operant en subllindar. L'objectiu últim és potenciar la integració de les tecnologies de sensat d'imatge infraroja (IR) basades en PbSe per expandir-ne el seu ús, no només a diferents escenaris, sinó també en diferents estadis de maduresa de la integració PbSe-CMOS. En aquest sentit, es proposa investigar un conjunt complet de blocs funcionals distribuïts en dos enfocs paral·lels: - Dispositius d'imatgeria MWIR "Smart" basats en frames utilitzant noves topologies de circuit DPS amb correcció de l'FPN en guany i offset. Aquesta línia de recerca exprimeix el pitch del detector per oferir una programabilitat completament digital a nivell de píxel i plena funcionalitat amb compensació de la capacitat paràsita d'entrada i memòria interna de fotograma. - Dispositius de visió MWIR "Compact"-pitch "frame-free" en base a un novedós esquema d'integració analògica en el DPS i diferenciació temporal configurable, combinats amb protocols de comunicació asíncrons dins del pla focal. Aquesta estratègia es concep per permetre una alta compactació del pitch i un increment de la velocitat de lectura, mitjançant la supressió del filtrat digital intern i l'assignació dinàmica de l'ample de banda a cada píxel de l'FPA. Per tal d'independitzar la validació elèctrica dels primers prototips respecte a costosos processos de deposició del PbSe sensor a nivell d'oblia, la recerca s'amplia també al desenvolupament de noves estratègies d'emulació del detector d'IR i plataformes de test integrades especialment orientades a circuits integrats de lectura d'imatge. Cel·les DPS, dispositius d'imatge i xips de test s'han fabricat i caracteritzat, respectivament, en tecnologies CMOS estàndard 0.15 micres 1P6M, 0.35 micres 2P4M i 2.5 micres 2P1M, tots dins el marc de projectes de recerca amb socis industrials. Aquest treball ha conduït a la fabricació del primer dispositiu quàntic d'imatgeria IR d'alta velocitat, no refrigerat, basat en frames, i monolíticament fabricat en tecnologia VLSI CMOS estàndard, i ha donat lloc a Tachyon, una nova línia de càmeres IR comercials emprades en sistemes de control industrial, mediambiental i de transport en temps real.Postprint (published version

Propuesta de arquitectura y circuitos para la mejora del rango dinámico de sistemas de visión en un chip diseñados en tecnologías CMOS profundamente submicrométrica

El trabajo presentado en esta tesis trata de proponer nuevas técnicas para la expansión del rango dinámico en sensores electrónicos de imagen. En este caso, hemos dirigido nuestros estudios hacia la posibilidad de proveer dicha funcionalidad en un solo chip. Esto es, sin necesitar ningún soporte externo de hardware o software, formando un tipo de sistema denominado Sistema de Visión en un Chip (VSoC). El rango dinámico de los sensores electrónicos de imagen se define como el cociente entre la máxima y la mínima iluminación medible. Para mejorar este factor surgen dos opciones. La primera, reducir la mínima luz medible mediante la disminución del ruido en el sensor de imagen. La segunda, incrementar la máxima luz medible mediante la extensión del límite de saturación del sensor. Cronológicamente, nuestra primera opción para mejorar el rango dinámico se basó en reducir el ruido. Varias opciones se pueden tomar para mejorar la figura de mérito de ruido del sistema: reducir el ruido usando una tecnología CIS o usar circuitos dedicados, tales como calibración o auto cero. Sin embargo, el uso de técnicas de circuitos implica limitaciones, las cuales sólo pueden ser resueltas mediante el uso de tecnologías no estándar que están especialmente diseñadas para este propósito. La tecnología CIS utilizada está dirigida a la mejora de la calidad y las posibilidades del proceso de fotosensado, tales como sensibilidad, ruido, permitir imagen a color, etcétera. Para estudiar las características de la tecnología en más detalle, se diseñó un chip de test, lo cual permite extraer las mejores opciones para futuros píxeles. No obstante, a pesar de un satisfactorio comportamiento general, las medidas referentes al rango dinámico indicaron que la mejora de este mediante sólo tecnología CIS es muy limitada. Es decir, la mejora de la corriente oscura del sensor no es suficiente para nuestro propósito. Para una mayor mejora del rango dinámico se deben incluir circuitos dentro del píxel. No obstante, las tecnologías CIS usualmente no permiten nada más que transistores NMOS al lado del fotosensor, lo cual implica una seria restricción en el circuito a usar. Como resultado, el diseño de un sensor de imagen con mejora del rango dinámico en tecnologías CIS fue desestimado en favor del uso de una tecnología estándar, la cual da más flexibilidad al diseño del píxel. En tecnologías estándar, es posible introducir una alta funcionalidad usando circuitos dentro del píxel, lo cual permite técnicas avanzadas para extender el límite de saturación de los sensores de imagen. Para este objetivo surgen dos opciones: adquisición lineal o compresiva. Si se realiza una adquisición lineal, se generarán una gran cantidad de datos por cada píxel. Como ejemplo, si el rango dinámico de la escena es de 120dB al menos se necesitarían 20-bits/píxel, log2(10120/20)=19.93, para la representación binaria de este rango dinámico. Esto necesitaría de amplios recursos para procesar esta gran cantidad de datos, y un gran ancho de banda para moverlos al circuito de procesamiento. Para evitar estos problemas, los sensores de imagen de alto rango dinámico usualmente optan por utilizar una adquisición compresiva de la luz. Por lo tanto, esto implica dos tareas a realizar: la captura y la compresión de la imagen. La captura de la imagen se realiza a nivel de píxel, en el dispositivo fotosensor, mientras que la compresión de la imagen puede ser realizada a nivel de píxel, de sistema, o mediante postprocesado externo. Usando el postprocesado, existe un campo de investigación que estudia la compresión de escenas de alto rango dinámico mientras se mantienen los detalles, produciendo un resultado apropiado para la percepción humana en monitores convencionales de bajo rango dinámico. Esto se denomina Mapeo de Tonos (Tone Mapping) y usualmente emplea solo 8-bits/píxel para las representaciones de imágenes, ya que éste es el estándar para las imágenes de bajo rango dinámico. Los píxeles de adquisición compresiva, por su parte, realizan una compresión que no es dependiente de la escena de alto rango dinámico a capturar, lo cual implica una baja compresión o pérdida de detalles y contraste. Para evitar estas desventajas, en este trabajo, se presenta un píxel de adquisición compresiva que aplica una técnica de mapeo de tonos que permite la captura de imágenes ya comprimidas de una forma optimizada para mantener los detalles y el contraste, produciendo una cantidad muy reducida de datos. Las técnicas de mapeo de tonos ejecutan normalmente postprocesamiento mediante software en un ordenador sobre imágenes capturadas sin compresión, las cuales contienen una gran cantidad de datos. Estas técnicas han pertenecido tradicionalmente al campo de los gráficos por ordenador debido a la gran cantidad de esfuerzo computacional que requieren. Sin embargo, hemos desarrollado un nuevo algoritmo de mapeo de tonos especialmente adaptado para aprovechar los circuitos dentro del píxel y que requiere un reducido esfuerzo de computación fuera de la matriz de píxeles, lo cual permite el desarrollo de un sistema de visión en un solo chip. El nuevo algoritmo de mapeo de tonos, el cual es un concepto matemático que puede ser simulado mediante software, se ha implementado también en un chip. Sin embargo, para esta implementación hardware en un chip son necesarias algunas adaptaciones y técnicas avanzadas de diseño, que constituyen en sí mismas otra de las contribuciones de este trabajo. Más aún, debido a la nueva funcionalidad, se han desarrollado modificaciones de los típicos métodos a usar para la caracterización y captura de imágenes

Modelling and characterization of small photosensors in advanced CMOS technologies

The rapid scaling of CMOS technologies and the development of optimized CIS (CMOS Image Sensor) processes for CMOS vision products has not been met by a similar effort in a comprehensive study of the main physical phenomena dominating the behavior of pixels at these technological nodes. This work provides a study of the behaviour of small photodetectors in advanced CMOS technologies in order to evaluate the impact of the geometry on the pixel photoresponse. Several models were developed paying special attention to the peripheral collection. The results suggest that the largest active area no longer necessarily guarantees the optimum response and show the significance of the lateral contribution for small photodiodes. That is, they establish the need to find a trade-off between the active area and the collecting area surrounding the junction to maximize the response. Based on the solution of the two-dimensional steady-state equation in the surroundings of the junction, an analytical model for uniformly illuminated p-n+ junction photodiodes was proposed. It is compact, general and scalable. In order to be used in Computer Aided Design (CAD) tools, the model was implemented in a Hardware Description Language (HDL) and used for circuit simulations to illustrate the potential of the model for the optimization of the pixel performance

Large scale reconfigurable analog system design enabled through floating-gate transistors

This work is concerned with the implementation and implication of non-volatile charge storage on VLSI system design. To that end, the floating-gate pFET (fg-pFET) is considered in the context of large-scale arrays. The programming of the element in an efficient and predictable way is essential to the implementation of these systems, and is thus explored. The overhead of the control circuitry for the fg-pFET, a key scalability issue, is examined. A light-weight, trend-accurate model is absolutely necessary for VLSI system design and simulation, and is also provided. Finally, several reconfigurable and reprogrammable systems that were built are discussed.Ph.D.Committee Chair: Hasler, Paul E.; Committee Member: Anderson, David V.; Committee Member: Ayazi, Farrokh; Committee Member: Degertekin, F. Levent; Committee Member: Hunt, William D

Smart cmos image sensor for 3d measurement

3D measurements are concerned with extracting visual information from the geometry of visible surfaces and interpreting the 3D coordinate data thus obtained, to detect or track the position or reconstruct the profile of an object, often in real time. These systems necessitate image sensors with high accuracy of position estimation and high frame rate of data processing for handling large volumes of data. A standard imager cannot address the requirements of fast image acquisition and processing, which are the two figures of merit for 3D measurements. Hence, dedicated VLSI imager architectures are indispensable for designing these high performance sensors. CMOS imaging technology provides potential to integrate image processing algorithms on the focal plane of the device, resulting in smart image sensors, capable of achieving better processing features in handling massive image data. The objective of this thesis is to present a new architecture of smart CMOS image sensor for real time 3D measurement using the sheet-beam projection methods based on active triangulation. Proposing the vision sensor as an ensemble of linear sensor arrays, all working in parallel and processing the entire image in slices, the complexity of the image-processing task shifts from O (N 2 ) to O (N). Inherent also in the design is the high level of parallelism to achieve massive parallel processing at high frame rate, required in 3D computation problems. This work demonstrates a prototype of the smart linear sensor incorporating full testability features to test and debug both at device and system levels. The salient features of this work are the asynchronous position to pulse stream conversion, multiple images binarization, high parallelism and modular architecture resulting in frame rate and sub-pixel resolution suitable for real time 3D measurements

Enhancing Real-time Embedded Image Processing Robustness on Reconfigurable Devices for Critical Applications

Nowadays, image processing is increasingly used in several application fields, such as biomedical, aerospace, or automotive. Within these fields, image processing is used to serve both non-critical and critical tasks. As example, in automotive, cameras are becoming key sensors in increasing car safety, driving assistance and driving comfort. They have been employed for infotainment (non-critical), as well as for some driver assistance tasks (critical), such as Forward Collision Avoidance, Intelligent Speed Control, or Pedestrian Detection. The complexity of these algorithms brings a challenge in real-time image processing systems, requiring high computing capacity, usually not available in processors for embedded systems. Hardware acceleration is therefore crucial, and devices such as Field Programmable Gate Arrays (FPGAs) best fit the growing demand of computational capabilities. These devices can assist embedded processors by significantly speeding-up computationally intensive software algorithms. Moreover, critical applications introduce strict requirements not only from the real-time constraints, but also from the device reliability and algorithm robustness points of view. Technology scaling is highlighting reliability problems related to aging phenomena, and to the increasing sensitivity of digital devices to external radiation events that can cause transient or even permanent faults. These faults can lead to wrong information processed or, in the worst case, to a dangerous system failure. In this context, the reconfigurable nature of FPGA devices can be exploited to increase the system reliability and robustness by leveraging Dynamic Partial Reconfiguration features. The research work presented in this thesis focuses on the development of techniques for implementing efficient and robust real-time embedded image processing hardware accelerators and systems for mission-critical applications. Three main challenges have been faced and will be discussed, along with proposed solutions, throughout the thesis: (i) achieving real-time performances, (ii) enhancing algorithm robustness, and (iii) increasing overall system's dependability. In order to ensure real-time performances, efficient FPGA-based hardware accelerators implementing selected image processing algorithms have been developed. Functionalities offered by the target technology, and algorithm's characteristics have been constantly taken into account while designing such accelerators, in order to efficiently tailor algorithm's operations to available hardware resources. On the other hand, the key idea for increasing image processing algorithms' robustness is to introduce self-adaptivity features at algorithm level, in order to maintain constant, or improve, the quality of results for a wide range of input conditions, that are not always fully predictable at design-time (e.g., noise level variations). This has been accomplished by measuring at run-time some characteristics of the input images, and then tuning the algorithm parameters based on such estimations. Dynamic reconfiguration features of modern reconfigurable FPGA have been extensively exploited in order to integrate run-time adaptivity into the designed hardware accelerators. Tools and methodologies have been also developed in order to increase the overall system dependability during reconfiguration processes, thus providing safe run-time adaptation mechanisms. In addition, taking into account the target technology and the environments in which the developed hardware accelerators and systems may be employed, dependability issues have been analyzed, leading to the development of a platform for quickly assessing the reliability and characterizing the behavior of hardware accelerators implemented on reconfigurable FPGAs when they are affected by such faults