65 research outputs found

    고속 시리얼 링크를 위한 고리 발진기를 기반으로 하는 주파수 합성기

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    학위논문(박사) -- 서울대학교대학원 : 공과대학 전기·정보공학부, 2022. 8. 정덕균.In this dissertation, major concerns in the clocking of modern serial links are discussed. As sub-rate, multi-standard architectures are becoming predominant, the conventional clocking methodology seems to necessitate innovation in terms of low-cost implementation. Frequency synthesis with active, inductor-less oscillators replacing LC counterparts are reviewed, and solutions for two major drawbacks are proposed. Each solution is verified by prototype chip design, giving a possibility that the inductor-less oscillator may become a proper candidate for future high-speed serial links. To mitigate the high flicker noise of a high-frequency ring oscillator (RO), a reference multiplication technique that effectively extends the bandwidth of the following all-digital phase-locked loop (ADPLL) is proposed. The technique avoids any jitter accumulation, generating a clean mid-frequency clock, overall achieving high jitter performance in conjunction with the ADPLL. Timing constraint for the proper reference multiplication is first analyzed to determine the calibration points that may correct the existent phase errors. The weight for each calibration point is updated by the proposed a priori probability-based least-mean-square (LMS) algorithm. To minimize the time required for the calibration, each gain for the weight update is adaptively varied by deducing a posteriori which error source dominates the others. The prototype chip is fabricated in a 40-nm CMOS technology, and its measurement results verify the low-jitter, high-frequency clock generation with fast calibration settling. The presented work achieves an rms jitter of 177/223 fs at 8/16-GHz output, consuming 12.1/17-mW power. As the second embodiment, an RO-based ADPLL with an analog technique that addresses the high supply sensitivity of the RO is presented. Unlike prior arts, the circuit for the proposed technique does not extort the RO voltage headroom, allowing high-frequency oscillation. Further, the performance given from the technique is robust over process, voltage, and temperature (PVT) variations, avoiding the use of additional calibration hardware. Lastly, a comprehensive analysis of phase noise contribution is conducted for the overall ADPLL, followed by circuit optimizations, to retain the low-jitter output. Implemented in a 40-nm CMOS technology, the frequency synthesizer achieves an rms jitter of 289 fs at 8 GHz output without any injected supply noise. Under a 20-mVrms white supply noise, the ADPLL suppresses supply-noise-induced jitter by -23.8 dB.본 논문은 현대 시리얼 링크의 클락킹에 관여되는 주요한 문제들에 대하여 기술한다. 준속도, 다중 표준 구조들이 채택되고 있는 추세에 따라, 기존의 클라킹 방법은 낮은 비용의 구현의 관점에서 새로운 혁신을 필요로 한다. LC 공진기를 대신하여 능동 소자 발진기를 사용한 주파수 합성에 대하여 알아보고, 이에 발생하는 두가지 주요 문제점과 각각에 대한 해결 방안을 탐색한다. 각 제안 방법을 프로토타입 칩을 통해 그 효용성을 검증하고, 이어서 능동 소자 발진기가 미래의 고속 시리얼 링크의 클락킹에 사용될 가능성에 대해 검토한다. 첫번째 시연으로써, 고주파 고리 발진기의 높은 플리커 잡음을 완화시키기 위해 기준 신호를 배수화하여 뒷단의 위상 고정 루프의 대역폭을 효과적으로 극대화 시키는 회로 기술을 제안한다. 본 기술은 지터를 누적 시키지 않으며 따라서 깨끗한 중간 주파수 클락을 생성시켜 위상 고정 루프와 함께 높은 성능의 고주파 클락을 합성한다. 기준 신호를 성공적으로 배수화하기 위한 타이밍 조건들을 먼저 분석하여 타이밍 오류를 제거하기 위한 방법론을 파악한다. 각 교정 중량은 연역적 확률을 기반으로한 LMS 알고리즘을 통해 갱신되도록 설계된다. 교정에 필요한 시간을 최소화 하기 위하여, 각 교정 이득은 타이밍 오류 근원들의 크기를 귀납적으로 추론한 값을 바탕으로 지속적으로 제어된다. 40-nm CMOS 공정으로 구현된 프로토타입 칩의 측정을 통해 저소음, 고주파 클락을 빠른 교정 시간안에 합성해 냄을 확인하였다. 이는 177/223 fs의 rms 지터를 가지는 8/16 GHz의 클락을 출력한다. 두번째 시연으로써, 고리 발진기의 높은 전원 노이즈 의존성을 완화시키는 기술이 포함된 주파수 합성기가 설계되었다. 이는 고리 발진기의 전압 헤드룸을 보존함으로서 고주파 발진을 가능하게 한다. 나아가, 전원 노이즈 감소 성능은 공정, 전압, 온도 변동에 대하여 민감하지 않으며, 따라서 추가적인 교정 회로를 필요로 하지 않는다. 마지막으로, 위상 노이즈에 대한 포괄적 분석과 회로 최적화를 통하여 주파수 합성기의 저잡음 출력을 방해하지 않는 방법을 고안하였다. 해당 프로토타입 칩은 40-nm CMOS 공정으로 구현되었으며, 전원 노이즈가 인가되지 않은 상태에서 289 fs의 rms 지터를 가지는 8 GHz의 클락을 출력한다. 또한, 20 mVrms의 전원 노이즈가 인가되었을 때에 유도되는 지터의 양을 -23.8 dB 만큼 줄이는 것을 확인하였다.1 Introduction 1 1.1 Motivation 3 1.1.1 Clocking in High-Speed Serial Links 4 1.1.2 Multi-Phase, High-Frequency Clock Conversion 8 1.2 Dissertation Objectives 10 2 RO-Based High-Frequency Synthesis 12 2.1 Phase-Locked Loop Fundamentals 12 2.2 Toward All-Digital Regime 15 2.3 RO Design Challenges 21 2.3.1 Oscillator Phase Noise 21 2.3.2 Challenge 1: High Flicker Noise 23 2.3.3 Challenge 2: High Supply Noise Sensitivity 26 3 Filtering RO Noise 28 3.1 Introduction 28 3.2 Proposed Reference Octupler 34 3.2.1 Delay Constraint 34 3.2.2 Phase Error Calibration 38 3.2.3 Circuit Implementation 51 3.3 IL-ADPLL Implementation 55 3.4 Measurement Results 59 3.5 Summary 63 4 RO Supply Noise Compensation 69 4.1 Introduction 69 4.2 Proposed Analog Closed Loop for Supply Noise Compensation 72 4.2.1 Circuit Implementation 73 4.2.2 Frequency-Domain Analysis 76 4.2.3 Circuit Optimization 81 4.3 ADPLL Implementation 87 4.4 Measurement Results 90 4.5 Summary 98 5 Conclusions 99 A Notes on the 8REF 102 B Notes on the ACSC 105박

    Quadrature Frequency Synthesis for Wideband Wireless Transceivers

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    University of Minnesota Ph.D. dissertation. May 2014. Major: Electrical Engineering. Advisor: Ramesh Harjani. 1 computer file (PDF); xi, 112 pages.In this thesis, three different techniques pertinent to quadrature LO generation in high data rate and wideband RF transceivers are presented. Prototype designs are made to verify the performance of the proposed techniques, in three different technologies: IBM 130nm CMOS process, TSMC 65nm CMOS process and IBM 32nm SOI process. The three prototype designs also cover three different frequency bands, ranging from 5GHz to 74GHz. First, an LO generation scheme for a 21 GHz center-frequency, 4-GHz instantaneous bandwidth channelized receiver is presented. A single 1.33 GHz reference source is used to simultaneously generate 20 GHz and 22 GHz LOs with quadrature outputs. Injection locking is used instead of conventional PLL techniques allowing low-power quadrature generation. A harmonic-rich signal, containing both even and odd harmonics of the input reference signal, is generated using a digital pulse slimmer. Two ILO chains are used to lock on to the 10th and 11th harmonics of the reference signal generating the 20 GHz and the 22 GHz quadrature LOs respectively. The prototype design is implemented in IBM's 130 nm CMOS process, draws 110 mA from a 1.2 V supply and occupies an active area of 1.8 square-mm. Next, a wide-tuning range QVCO with a novel complimentary-coupling technique is presented. By using PMOS transistors for coupling two VCOs with NMOS gm-cells, it is shown that significant phase-noise improvement (7-9 dB) can be achieved over the traditional NMOS coupling. This breaks the trade-off between quadrature accuracy and phase-noise, allowing reasonable accuracy without a significant phase-noise hit. The proposed technique is frequency-insensitive, allowing robust coupling over a wide tuning range. A prototype design is done in TSMC 65nm process, with 4-bits of discrete tuning spanning the frequency range 4.6-7.8 GHz (52% FTR) while achieving a minimum FOM of 181.4dBc/Hz and a minimum FOMT of 196dBc/Hz. Finally, a wide tuning-range millimeter wave QVCO is presented that employs a modified transformer-based super-harmonic coupling technique. Using the proposed technique, together with custom-designed inductors and metal capacitors, a prototype is designed in IBM 32nm SOI technology with 6-bits of discrete tuning using switched capacitors. Full EM-extracted simulations show a tuning range of 53.84GHz to 73.59GHz, with an FOM of 173 dBc/Hz and an FOMT of 183 dBc/Hz. With 19.75GHz of tuning range around a 63.7GHz center frequency, the simulated FTR is 31%, surpassing all similar designs in the same band. A slight modification in the tank inductors would enable the QVCO to be employed in multiple mm-Wave bands (57-66 GHz communication band, 71-76 GHz E-band, and 76-77 GHz radar band)

    Multi-Loop-Ring-Oscillator Design and Analysis for Sub-Micron CMOS

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    Ring oscillators provide a central role in timing circuits for today?s mobile devices and desktop computers. Increased integration in these devices exacerbates switching noise on the supply, necessitating improved supply resilience. Furthermore, reduced voltage headroom in submicron technologies limits the number of stacked transistors available in a delay cell. Hence, conventional single-loop oscillators offer relatively few design options to achieve desired specifications, such as supply rejection. Existing state-of-the-art supply-rejection- enhancement methods include actively regulating the supply with an LDO, employing a fully differential or current-starved delay cell, using a hi-Z voltage-to-current converter, or compensating/calibrating the delay cell. Multiloop ring oscillators (MROs) offer an additional solution because by employing a more complex ring-connection structure and associated delay cell, the designer obtains an additional degree of freedom to meet the desired specifications. Designing these more complex multiloop structures to start reliably and achieve the desired performance requires a systematic analysis procedure, which we attack on two fronts: (1) a generalized delay-cell viewpoint of the MRO structure to assist in both analysis and circuit layout, and (2) a survey of phase-noise analysis to provide a bank of methods to analyze MRO phase noise. We distill the salient phase-noise-analysis concepts/key equations previously developed to facilitate MRO and other non-conventional oscillator analysis. Furthermore, our proposed analysis framework demonstrates that all these methods boil down to obtaining three things: (1) noise modulation function (NMF), (2) noise transfer function (NTF), and (3) current-controlled-oscillator gain (KICO). As a case study, we detail the design, analysis, and measurement of a proposed multiloop ring oscillator structure that provides improved power-supply isolation (more than 20dB increase in supply rejection over a conventional-oscillator control case fabricated on the same test chip). Applying our general multi-loop-oscillator framework to this proposed MRO circuit leads both to design-oriented expressions for the oscillation frequency and supply rejection as well as to an efficient layout technique facilitating cross-coupling for improved quadrature accuracy and systematic, substantially simplified layout effort

    Ultra Low-Power Frequency Synthesizers for Duty Cycled IoT radios

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    Internet of Things (IoT), which is one of the main talking points in the electronics industry today, consists of a number of highly miniaturized sensors and actuators which sense the physical environment around us and communicate that information to a central information hub for further processing. This agglomeration of miniaturized sensors helps the system to be deployed in previously impossible arenas such as healthcare (Body Area Networks - BAN), industrial automation, real-time monitoring environmental parameters and so on; thereby greatly improving the quality of life. Since the IoT devices are usually untethered, their energy sources are limited (typically battery powered or energy scavenging) and hence have to consume very low power. Today's IoT systems employ radios that use communication protocols like Bluetooth Smart; which means that they communicate at data rates of a few hundred kb/s to a few Mb/s while consuming around a few mW of power. Even though the power dissipation of these radios have been decreasing steadily over the years, they seem to have reached a lower limit in the recent times. Hence, there is a need to explore other avenues to further reduce this dissipation so as to further improve the energy autonomy of the IoT node. Duty cycling has emerged as a promising alternative in this sense since it involves radios transmitting very short bursts of data at high rates and being asleep the rest of the time. In addition, high data rates proffer the added advantage of reducing network congestion which has become a major problem in IoT owing to the increase in the number of sensor nodes as well as the volume of data they send. But, as the average power (energy) dissipated decreases due to duty cycling, the energy overhead associated with the start-up phase of the radio becomes comparable with the former. Therefore, in order to take full advantage of duty cycling, the radio should be capable of being turned ON/OFF almost instantaneously. Furthermore, the radio of the future should also be able to support easy frequency hopping to improve the system efficiency from an interference point of view. In other words, in addition to high data rate capability, the next generation radios must also be highly agile and have a low energy overhead. All these factors viz. data rate, agility and overhead are mainly dependent on the radio's frequency synthesizer and therefore emphasis needs to be laid on developing new synthesizer architectures which are also amenable to technology scaling. This thesis deals with the evolution of one such all-digital frequency synthesizer; with each step dealing with one of the aforementioned issues. In order to reduce the energy overhead of the synthesizer, FBAR resonators (which are a class of MEMS resonators) are used as the frequency reference instead of a traditional quartz crystal. The FBAR resonators aid the design of fast-startup oscillators as opposed to the long latency associated with the start-up of the crystal oscillator. In addition, the frequency stability of the FBAR lends itself to open-loop architecture which can support very high data rates. Another advantage of the open-loop architecture is the frequency agility which aids easy channel switching for multi-hop architectures, as demonstrated in this thesis

    Multi-Loop-Ring-Oscillator Design and Analysis for Sub-Micron CMOS

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    Ring oscillators provide a central role in timing circuits for today?s mobile devices and desktop computers. Increased integration in these devices exacerbates switching noise on the supply, necessitating improved supply resilience. Furthermore, reduced voltage headroom in submicron technologies limits the number of stacked transistors available in a delay cell. Hence, conventional single-loop oscillators offer relatively few design options to achieve desired specifications, such as supply rejection. Existing state-of-the-art supply-rejection- enhancement methods include actively regulating the supply with an LDO, employing a fully differential or current-starved delay cell, using a hi-Z voltage-to-current converter, or compensating/calibrating the delay cell. Multiloop ring oscillators (MROs) offer an additional solution because by employing a more complex ring-connection structure and associated delay cell, the designer obtains an additional degree of freedom to meet the desired specifications. Designing these more complex multiloop structures to start reliably and achieve the desired performance requires a systematic analysis procedure, which we attack on two fronts: (1) a generalized delay-cell viewpoint of the MRO structure to assist in both analysis and circuit layout, and (2) a survey of phase-noise analysis to provide a bank of methods to analyze MRO phase noise. We distill the salient phase-noise-analysis concepts/key equations previously developed to facilitate MRO and other non-conventional oscillator analysis. Furthermore, our proposed analysis framework demonstrates that all these methods boil down to obtaining three things: (1) noise modulation function (NMF), (2) noise transfer function (NTF), and (3) current-controlled-oscillator gain (KICO). As a case study, we detail the design, analysis, and measurement of a proposed multiloop ring oscillator structure that provides improved power-supply isolation (more than 20dB increase in supply rejection over a conventional-oscillator control case fabricated on the same test chip). Applying our general multi-loop-oscillator framework to this proposed MRO circuit leads both to design-oriented expressions for the oscillation frequency and supply rejection as well as to an efficient layout technique facilitating cross-coupling for improved quadrature accuracy and systematic, substantially simplified layout effort

    RF MEMS reference oscillators platform for wireless communications

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    A complete platform for RF MEMS reference oscillator is built to replace bulky quartz from mobile devices, thus reducing size and cost. The design targets LTE transceivers. A low phase noise 76.8 MHz reference oscillator is designed using material temperature compensated AlN-on-silicon resonator. The thesis proposes a system combining piezoelectric resonator with low loading CMOS cross coupled series resonance oscillator to reach state-of-the-art LTE phase noise specifications. The designed resonator is a two port fundamental width extensional mode resonator. The resonator characterized by high unloaded quality factor in vacuum is designed with low temperature coefficient of frequency (TCF) using as compensation material which enhances the TCF from - 3000 ppm to 105 ppm across temperature ranges of -40˚C to 85˚C. By using a series resonant CMOS oscillator, phase noise of -123 dBc/Hz at 1 kHz, and -162 dBc/Hz at 1MHz offset is achieved. The oscillator’s integrated RMS jitter is 106 fs (10 kHz–20 MHz), consuming 850 μA, with startup time is 250μs, achieving a Figure-of-merit (FOM) of 216 dB. Electronic frequency compensation is presented to further enhance the frequency stability of the oscillator. Initial frequency offset of 8000 ppm and temperature drift errors are combined and further addressed electronically. A simple digital compensation circuitry generates a compensation word as an input to 21 bit MASH 1 -1-1 sigma delta modulator incorporated in RF LTE fractional N-PLL for frequency compensation. Temperature is sensed using low power BJT band-gap front end circuitry with 12 bit temperature to digital converter characterized by a resolution of 0.075˚C. The smart temperature sensor consumes only 4.6 μA. 700 MHz band LTE signal proved to have the stringent phase noise and frequency resolution specifications among all LTE bands. For this band, the achieved jitter value is 1.29 ps and the output frequency stability is 0.5 ppm over temperature ranges from -40˚C to 85˚C. The system is built on 32nm CMOS technology using 1.8V IO device

    Analysis of the high frequency substrate noise effects on LC-VCOs

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    La integració de transceptors per comunicacions de radiofreqüència en CMOS pot quedar seriosament limitada per la interacció entre els seus blocs, arribant a desaconsellar la utilització de un únic dau de silici. El soroll d’alta freqüència generat per certs blocs, com l’amplificador de potencia, pot viatjar pel substrat i amenaçar el correcte funcionament de l’oscil·lador local. Trobem tres raons importants que mostren aquest risc d’interacció entre blocs i que justifiquen la necessitat d’un estudi profund per minimitzar-lo. Les característiques del substrat fan que el soroll d’alta freqüència es propagui m’és fàcilment que el de baixa freqüència. Per altra banda, les estructures de protecció perden eficiència a mesura que la freqüència augmenta. Finalment, el soroll d’alta freqüència que arriba a l’oscil·lador degrada al seu correcte comportament. El propòsit d’aquesta tesis és analitzar en profunditat la interacció entre el soroll d’alta freqüència que es propaga pel substrat i l’oscil·lador amb l’objectiu de poder predir, mitjançant un model, l’efecte que aquest soroll pot tenir sobre el correcte funcionament de l’oscil·lador. Es volen proporcionar diverses guies i normes a seguir que permeti als dissenyadors augmentar la robustesa dels oscil·ladors al soroll d’alta freqüència que viatja pel substrat. La investigació de l’efecte del soroll de substrat en oscil·ladors s’ha iniciat des d’un punt de vista empíric, per una banda, analitzant la propagació de senyals a través del substrat i avaluant l’eficiència d’estructures per bloquejar aquesta propagació, i per altra, determinant l’efecte d’un to present en el substrat en un oscil·lador. Aquesta investigació ha mostrat que la injecció d’un to d’alta freqüència en el substrat es pot propagar fins arribar a l’oscil·lador i que, a causa del ’pulling’ de freqüència, pot modular en freqüència la sortida de l’oscil·lador. A partir dels resultats de l’anàlisi empíric s’ha aportat un model matemàtic que permet predir l’efecte del soroll en l’oscil·lador. Aquest model té el principal avantatge en el fet de que està basat en paràmetres físics de l’oscil·lador o del soroll, permetent determinar les mesures que un dissenyador pot prendre per augmentar la robustesa de l’oscil·lador així com les conseqüències que aquestes mesures tenen sobre el seu funcionament global (trade-offs). El model ha estat comparat tant amb simulacions com amb mesures reals demostrant ser molt precís a l’hora de predir l’efecte del soroll de substrat. La utilitat del model com a eina de disseny s’ha demostrat en dos estudis. Primerament, les conclusions del model han estat aplicades en el procés de disseny d’un oscil·lador d’ultra baix consum a 2.5GHz, aconseguint un oscil·lador robust al soroll de substrat d’alta freqüència i amb característiques totalment compatibles amb els principals estàndards de comunicació en aquesta banda. Finalment, el model s’ha utilitzat com a eina d’anàlisi per avaluar la causa de les diferències, en termes de robustesa a soroll de substrat, mesurades en dos oscil·ladors a 60GHz amb dues diferents estratègies d’apantallament de l’inductor del tanc de ressonant, flotant en un cas i connectat a terra en l’altre. El model ha mostrat que les diferències en robustesa són causades per la millora en el factor de qualitat i en l’amplitud d’oscil·lació i no per un augment en l’aïllament entre tanc i substrat. Per altra banda, el model ha demostrat ser vàlid i molt precís inclús en aquest rang de freqüència tan extrem. el principal avantatge en el fet de que està basat en paràmetres físics de l’oscil·lador o del soroll, permetent determinar les mesures que un dissenyador pot prendre per augmentar la robustesa de l’oscil·lador així com les conseqüències que aquestes mesures tenen sobre el seu funcionament global (trade-offs). El model ha estat comparat tant amb simulacions com amb mesures reals demostrant ser molt precís a l’hora de predir l’efecte del soroll de substrat. La utilitat del model com a eina de disseny s’ha demostrat en dos estudis. Primerament, les conclusions del model han estat aplicades en el procés de disseny d’un oscil·lador d’ultra baix consum a 2.5GHz, aconseguint un oscil·lador robust al soroll de substrat d’alta freqüència i amb característiques totalment compatibles amb els principals estàndards de comunicació en aquesta banda. Finalment, el model s’ha utilitzat com a eina d’anàlisi per avaluar la causa de les diferències, en termes de robustesa a soroll de substrat, mesurades en dos oscil·ladors a 60GHz amb dues diferents estratègies d’apantallament de l’inductor del tanc de ressonant, flotant en un cas i connectat a terra en l’altre. El model ha mostrat que les diferències en robustesa són causades per la millora en el factor de qualitat i en l’amplitud d’oscil·lació i no per un augment en l’aïllament entre tanc i substrat. Per altra banda, el model ha demostrat ser vàlid i molt precís inclús en aquest rang de freqüència tan extrem.The integration of transceivers for RF communication in CMOS can be seriously limited by the interaction between their blocks, even advising against using a single silicon die. The high frequency noise generated by some of the blocks, like the power amplifier, can travel through the substrate, reaching the local oscillator and threatening its correct performance. Three important reasons can be stated that show the risk of the single die integration. Noise propagation is easier the higher the frequency. Moreover, the protection structures lose efficiency as the noise frequency increases. Finally, the high frequency noise that reaches the local oscillator degrades its performance. The purpose of this thesis is to deeply analyze the interaction between the high frequency substrate noise and the oscillator with the objective of being able to predict, thanks to a model, the effect that this noise may have over the correct behavior of the oscillator. We want to provide some guidelines to the designers to allow them to increase the robustness of the oscillator to high frequency substrate noise. The investigation of the effect of the high frequency substrate noise on oscillators has started from an empirical point of view, on one hand, analyzing the noise propagation through the substrate and evaluating the efficiency of some structures to block this propagation, and on the other hand, determining the effect on an oscillator of a high frequency noise tone present in the substrate. This investigation has shown that the injection of a high frequency tone in the substrate can reach the oscillator and, due to a frequency pulling effect, it can modulate in frequency the output of the oscillator. Based on the results obtained during the empirical analysis, a mathematical model to predict the effect of the substrate noise on the oscillator has been provided. The main advantage of this model is the fact that it is based on physical parameters of the oscillator and of the noise, allowing to determine the measures that a designer can take to increase the robustness of the oscillator as well as the consequences (trade-offs) that these measures have over its global performance. This model has been compared against both, simulations and real measurements, showing a very high accuracy to predict the effect of the high frequency substrate noise. The usefulness of the presented model as a design tool has been demonstrated in two case studies. Firstly, the conclusions obtained from the model have been applied in the design of an ultra low power consumption 2.5 GHz oscillator robust to the high frequency substrate noise with characteristics which make it compatible with the main communication standards in this frequency band. Finally, the model has been used as an analysis tool to evaluate the cause of the differences, in terms of performance degradation due to substrate noise, measured in two 60 GHz oscillators with two different tank inductor shielding strategies, floating and grounded. The model has determined that the robustness differences are caused by the improvement in the tank quality factor and in the oscillation amplitude and no by an increased isolation between the tank and the substrate. The model has shown to be valid and very accurate even in these extreme frequency range.Postprint (published version

    Process and Temperature Compensated Wideband Injection Locked Frequency Dividers and their Application to Low-Power 2.4-GHz Frequency Synthesizers

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    There has been a dramatic increase in wireless awareness among the user community in the past five years. The 2.4-GHz Industrial, Scientific and Medical (ISM) band is being used for a diverse range of applications due to the following reasons. It is the only unlicensed band approved worldwide and it offers more bandwidth and supports higher data rates compared to the 915-MHz ISM band. The power consumption of devices utilizing the 2.4-GHz band is much lower compared to the 5.2-GHz ISM band. Protocols like Bluetooth and Zigbee that utilize the 2.4-GHz ISM band are becoming extremely popular. Bluetooth is an economic wireless solution for short range connectivity between PC, cell phones, PDAs, Laptops etc. The Zigbee protocol is a wireless technology that was developed as an open global standard to address the unique needs of low-cost, lowpower, wireless sensor networks. Wireless sensor networks are becoming ubiquitous, especially after the recent terrorist activities. Sensors are employed in strategic locations for real-time environmental monitoring, where they collect and transmit data frequently to a nearby terminal. The devices operating in this band are usually compact and battery powered. To enhance battery life and avoid the cumbersome task of battery replacement, the devices used should consume extremely low power. Also, to meet the growing demands cost and sized has to be kept low which mandates fully monolithic implementation using low cost process. CMOS process is extremely attractive for such applications because of its low cost and the possibility to integrate baseband and high frequency circuits on the same chip. A fully integrated solution is attractive for low power consumption as it avoids the need for power hungry drivers for driving off-chip components. The transceiver is often the most power hungry block in a wireless communication system. The frequency divider (prescaler) and the voltage controlled oscillator in the transmitter’s frequency synthesizer are among the major sources of power consumption. There have been a number of publications in the past few decades on low-power high-performance VCOs. Therefore this work focuses on prescalers. A class of analog frequency dividers called as Injection-Locked Frequency Dividers (ILFD) was introduced in the recent past as low power frequency division. ILFDs can consume an order of magnitude lower power when compared to conventional flip-flop based dividers. However the range of operation frequency also knows as the locking range is limited. ILFDs can be classified as LC based and Ring based. Though LC based are insensitive to process and temperature variation, they cannot be used for the 2.4-GHz ISM band because of the large size of on-chip inductors at these frequencies. This causes a lot of valuable chip area to be wasted. Ring based ILFDs are compact and provide a low power solution but are extremely sensitive to process and temperature variations. Process and temperature variation can cause ring based ILFD to loose lock in the desired operating band. The goal of this work is to make the ring based ILFDs useful for practical applications. Techniques to extend the locking range of the ILFDs are discussed. A novel and simple compensation technique is devised to compensate the ILFD and keep the locking range tight with process and temperature variations. The proposed ILFD is used in a 2.4-GHz frequency synthesizer that is optimized for fractional-N synthesis. Measurement results supporting the theory are provided

    Design of high performance frequency synthesizers in communication systems

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    Frequency synthesizer is a key building block of fully-integrated wireless communication systems. Design of a frequency synthesizer requires the understanding of not only the circuit-level but also of the transceiver system-level considerations. This dissertation presents a full cycle of the synthesizer design procedure starting from the interpretation of standards to the testing and measurement results. A new methodology of interpreting communication standards into low level circuit specifications is developed to clarify how the requirements are calculated. A detailed procedure to determine important design variables is presented incorporating the fundamental theory and non-ideal effects such as phase noise and reference spurs. The design procedure can be easily adopted for different applications. A BiCMOS frequency synthesizer compliant for both wireless local area network (WLAN) 802.11a and 802.11b standards is presented as a design example. The two standards are carefully studied according to the proposed standard interpretation method. In order to satisfy stringent requirements due to the multi-standard architecture, an improved adaptive dual-loop phase-locked loop (PLL) architecture is proposed. The proposed improvements include a new loop filter topology with an active capacitance multiplier and a tunable dead zone circuit. These improvements are crucial for monolithic integration of the synthesizer with no off-chip components. The proposed architecture extends the operation limit of conventional integerN type synthesizers by providing better reference spur rejection and settling time performance while making it more suitable for monolithic integration. It opens a new possibility of using an integer-N architecture for various other communication standards, while maintaining the benefit of the integer-N architecture; an optimal performance in area and power consumption
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