Design of sigma-delta modulators for analog-to-digital conversion intensively using passive circuits

This thesis presents the analysis, design implementation and experimental evaluation of passiveactive discrete-time and continuous-time Sigma-Delta (ΣΔ) modulators (ΣΔMs) analog-todigital converters (ADCs). Two prototype circuits were manufactured. The first one, a discrete-time 2nd-order ΣΔM, was designed in a 130 nm CMOS technology. This prototype confirmed the validity of the ultra incomplete settling (UIS) concept used for implementing the passive integrators. This circuit, clocked at 100 MHz and consuming 298 μW, achieves DR/SNR/SNDR of 78.2/73.9/72.8 dB, respectively, for a signal bandwidth of 300 kHz. This results in a Walden FoMW of 139.3 fJ/conv.-step and Schreier FoMS of 168 dB. The final prototype circuit is a highly area and power efficient ΣΔM using a combination of a cascaded topology, a continuous-time RC loop filter and switched-capacitor feedback paths. The modulator requires only two low gain stages that are based on differential pairs. A systematic design methodology based on genetic algorithm, was used, which allowed decreasing the circuit’s sensitivity to the circuit components’ variations. This continuous-time, 2-1 MASH ΣΔM has been designed in a 65 nm CMOS technology and it occupies an area of just 0.027 mm2. Measurement results show that this modulator achieves a peak SNR/SNDR of 76/72.2 dB and DR of 77dB for an input signal bandwidth of 10 MHz, while dissipating 1.57 mW from a 1 V power supply voltage. The ΣΔM achieves a Walden FoMW of 23.6 fJ/level and a Schreier FoMS of 175 dB. The innovations proposed in this circuit result, both, in the reduction of the power consumption and of the chip size. To the best of the author’s knowledge the circuit achieves the lowest Walden FOMW for ΣΔMs operating at signal bandwidth from 5 MHz to 50 MHz reported to date

A 65nm continuous-time sigma-delta modulator with limited OTA DC gain compensation

This paper explores the effects of compensating the performance degradation in high-speed Continuous-Time Sigma-Delta modulators when the loop integrators are implemented through limited gain Operational Transconductance Amplifiers. Yet, the low DC-gain strongly affects both integrator magnitude and phase responses, with a reduction in the overall effective number of bits. This work models the degradation as due to a signal-dependent memory-less perturbation and theoretically studies its compensation by feeding an opposite signal back to the integrator input. The implementation and experimental results on a 65nm CMOS 2nd order prototype evaluate the performance increase with this technique, where no other compensation, nor any digital calibration, is included. Tested in different conditions, the compensated prototype improves more than 1.5 bit the ENoB with respect to the uncompensated counterpart. For a sampling frequency of 500 MHz the power consumption is 1.7mW, resulting in a 477.2fJ/conv-lev Walden and a 148.8dB Schreirer Figures of Merit

Low Power Analog to Digital Converters in Advanced CMOS Technology Nodes

The dissertation presents system and circuit solutions to improve the power efficiency and address high-speed design issues of ADCs in advanced CMOS technologies. For image sensor applications, a high-performance digitizer prototype based on column-parallel single-slope ADC (SS-ADC) topology for readout of a back-illuminated 3D-stacked CMOS image sensor is presented. To address the high power consumption issue in high-speed digital counters, a passing window (PW) based hybrid counter topology is proposed. To address the high column FPN under bright illumination conditions, a double auto-zeroing (AZ) scheme is proposed. The proposed techniques are experimentally verified in a prototype chip designed and fabricated in the TSMC 40 nm low-power CMOS process. The PW technique saves 52.8% of power consumption in the hybrid digital counters. Dark/bright column fixed pattern noise (FPN) of 0.0024%/0.028% is achieved employing the proposed double AZ technique for digital correlated double sampling (CDS). A single-column digitizer consumes total power of 66.8μW and occupies an area of 5.4 µm x 610 µm. For mobile/wireless receiver applications, this dissertation presents a low-power wide-bandwidth multistage noise-shaping (MASH) continuous-time delta-sigma modulator (CT-ΔΣM) employing finite impulse response (FIR) digital-to-analog converters (DACs) and encoder-embedded loop-unrolling (EELU) quantizers. The proposed MASH 1-1-1 topology is a cascade of three single-loop first-order CT-ΔΣM stages, each of which consists of an active-RC integrator, a current-steering DAC, and an EELU quantizer. An FIR filter in the main 1.5-bit DAC improves the modulator’s jitter sensitivity performance. FIR’s effect on the noise transfer function (NTF) of the modulator is compensated in the digital domain thanks to the MASH topology. Instead of employing a conventional analog direct feedback path, a 1.5-bit EELU quantizer based on multiplexing comparator outputs is proposed; this approach is suitable for highspeed operation together with power and area benefits. Fabricated in a 40-nm low-power CMOS technology, the modulator’s prototype achieves a 67.3 dB of signal-to-noise and distortion ratio (SNDR), 68 dB of signal-to-noise ratio (SNR), and 68.2 dB of dynamic range (DR) within 50.5 MHz of bandwidth (BW), while consuming 19 mW of total power (P). The proposed modulator features 161.5 dB of figure-of-merit (FOM), defined as FOM = SNDR + 10 log10 (BW/P)

Modulador Σ∆ en tiempo continuo con cuantificador de baja resolución

El diseño de sistemas electrónicos presenta una tendencia en la autonomía energética y la reducción de la masa y dimensiones de los dispositivos. Los circuitos electronicos para el procesamiento en la conversión de datos del dominio analógico al digital siguen presentando retos importantes. En el diseño de covertidores, la modulación Sigma-Delta sigue contribuyendo a la reducción de recursos y la resilencia a los factores ambientales y la deriva temporal. Los moduladores Sigma-Delta de tiempo continuo se han convertido en una buena opcion para aplicaciones que requieren un bajo consumo de potencia y una alta velocidad en el procesamiento de la información. Este trabajo se basa en el estudio de moduladores Sigma-Delta de tiempo continuo con cuantificador de un bit mostrando el análisis y modelado. La propuesta resulta la topología un modulador Sigma-Delta TC de tercer orden primeramente modelado en bloques de Simulink y posteriormente descrito con algunos bloques usando lenguaje de Verilog-A, alcanzando un SNR de 81.7 dB y una resolución de 13 bits usando una relación de sobre muestreo de 46. Como elemento innovador, la arquitectura propuesta se ha usado como opción para sustituir en transmisores RF los bloques del mezclador y el convertidor analógico digital (ADC).

LOW POWER AND HIGH SIGNAL TO NOISE RATIO BIO-MEDICAL AFE DESIGN TECHNIQUES

The research work described in this thesis was focused on finding novel techniques to implement a low-power and noise Bio-Medical Analog Front End (BMEF) circuit technique to enable high-quality Electrocardiography (ECG) sensing. Usually, an ECG signal and several bio-medical signals are sensed from the human body through a pair of electrodes. The electrical characteristics of the very small amplitude (1u-10mV) signals are corrupted by random noise and have a significant dc offset. 50/60Hz power supply coupling noise is one of the biggest cross-talk signals compared to the thermally generated random noise. These signals are even AFE composed of an Instrumentation Amplifier (IA), which will have a better Common Mode rejection ratio (CMRR). The main function of the AFE is to convert the weak electrical Signal into large signals whose amplitude is large enough for an Analog Digital Converter (ADC) to detect without having any errors. A Variable Gain Amplifier (VGA) is sometimes required to adjust signal amplitude to maintain the dynamic range of the ADC. Also, the Bio-medical transceiver needs an accurate and temperature-independent reference voltage and current for the ADC, commonly known as Bandgap Reference Circuit (BGR). These circuits need to consume as low power as possible to enable these circuits to be powered from the battery. The work started with analysing the existing circuit techniques for the circuits mentioned above and finding the key important improvements required to reach the target specifications. Previously proposed IA is generated based on voltage mode signal processing. To improve the CMRR (119dB), we proposed a current mode-based IA with an embedded DC cancellation technique. State-of-the-art VGA circuits were built based on the degeneration principle of the differential pair, which will enable the variable gain purpose, but none of these techniques discussed linearity improvement, which is very important in modern CMOS technologies. This work enhances the total Harmonic distortion (THD) by 21dB in the worst case by exploiting the feedback techniques around the differential pair. Also, this work proposes a low power curvature compensated bandgap with 2ppm/0C temperature sensitivity while consuming 12.5uW power from a 1.2V dc power supply. All circuits were built in 45nm TSMC-CMOS technology and simulated with all the performance metrics with Cadence (spectre) simulator. The circuit layout was carried out to study post-layout parasitic effect sensitivity

Ultra-low noise, high-frame rate readout design for a 3D-stacked CMOS image sensor

Due to the switch from CCD to CMOS technology, CMOS based image sensors have become smaller, cheaper, faster, and have recently outclassed CCDs in terms of image quality. Apart from the extensive set of applications requiring image sensors, the next technological breakthrough in imaging would be to consolidate and completely shift the conventional CMOS image sensor technology to the 3D-stacked technology. Stacking is recent and an innovative technology in the imaging field, allowing multiple silicon tiers with different functions to be stacked on top of each other. The technology allows for an extreme parallelism of the pixel readout circuitry. Furthermore, the readout is placed underneath the pixel array on a 3D-stacked image sensor, and the parallelism of the readout can remain constant at any spatial resolution of the sensors, allowing extreme low noise and a high-frame rate (design) at virtually any sensor array resolution. The objective of this work is the design of ultra-low noise readout circuits meant for 3D-stacked image sensors, structured with parallel readout circuitries. The readout circuit’s key requirements are low noise, speed, low-area (for higher parallelism), and low power. A CMOS imaging review is presented through a short historical background, followed by the description of the motivation, the research goals, and the work contributions. The fundamentals of CMOS image sensors are addressed, as a part of highlighting the typical image sensor features, the essential building blocks, types of operation, as well as their physical characteristics and their evaluation metrics. Following up on this, the document pays attention to the readout circuit’s noise theory and the column converters theory, to identify possible pitfalls to obtain sub-electron noise imagers. Lastly, the fabricated test CIS device performances are reported along with conjectures and conclusions, ending this thesis with the 3D-stacked subject issues and the future work. A part of the developed research work is located in the Appendices.Devido à mudança da tecnologia CCD para CMOS, os sensores de imagem em CMOS tornam se mais pequenos, mais baratos, mais rápidos, e mais recentemente, ultrapassaram os sensores CCD no que respeita à qualidade de imagem. Para além do vasto conjunto de aplicações que requerem sensores de imagem, o próximo salto tecnológico no ramo dos sensores de imagem é o de mudar completamente da tecnologia de sensores de imagem CMOS convencional para a tecnologia “3D-stacked”. O empilhamento de chips é relativamente recente e é uma tecnologia inovadora no campo dos sensores de imagem, permitindo vários planos de silício com diferentes funções poderem ser empilhados uns sobre os outros. Esta tecnologia permite portanto, um paralelismo extremo na leitura dos sinais vindos da matriz de píxeis. Além disso, num sensor de imagem de planos de silício empilhados, os circuitos de leitura estão posicionados debaixo da matriz de píxeis, sendo que dessa forma, o paralelismo pode manter-se constante para qualquer resolução espacial, permitindo assim atingir um extremo baixo ruído e um alto debito de imagens, virtualmente para qualquer resolução desejada. O objetivo deste trabalho é o de desenhar circuitos de leitura de coluna de muito baixo ruído, planeados para serem empregues em sensores de imagem “3D-stacked” com estruturas altamente paralelizadas. Os requisitos chave para os circuitos de leitura são de baixo ruído, rapidez e pouca área utilizada, de forma a obter-se o melhor rácio. Uma breve revisão histórica dos sensores de imagem CMOS é apresentada, seguida da motivação, dos objetivos e das contribuições feitas. Os fundamentos dos sensores de imagem CMOS são também abordados para expor as suas características, os blocos essenciais, os tipos de operação, assim como as suas características físicas e suas métricas de avaliação. No seguimento disto, especial atenção é dada à teoria subjacente ao ruído inerente dos circuitos de leitura e dos conversores de coluna, servindo para identificar os possíveis aspetos que dificultem atingir a tão desejada performance de muito baixo ruído. Por fim, os resultados experimentais do sensor desenvolvido são apresentados junto com possíveis conjeturas e respetivas conclusões, terminando o documento com o assunto de empilhamento vertical de camadas de silício, junto com o possível trabalho futuro

Integrated Circuits and Systems for Smart Sensory Applications

Connected intelligent sensing reshapes our society by empowering people with increasing new ways of mutual interactions. As integration technologies keep their scaling roadmap, the horizon of sensory applications is rapidly widening, thanks to myriad light-weight low-power or, in same cases even self-powered, smart devices with high-connectivity capabilities. CMOS integrated circuits technology is the best candidate to supply the required smartness and to pioneer these emerging sensory systems. As a result, new challenges are arising around the design of these integrated circuits and systems for sensory applications in terms of low-power edge computing, power management strategies, low-range wireless communications, integration with sensing devices. In this Special Issue recent advances in application-specific integrated circuits (ASIC) and systems for smart sensory applications in the following five emerging topics: (I) dedicated short-range communications transceivers; (II) digital smart sensors, (III) implantable neural interfaces, (IV) Power Management Strategies in wireless sensor nodes and (V) neuromorphic hardware

Multi-Stage Noise-Shaping Continuous-Time Sigma-Delta Modulator

The design of a single-loop continuous-time ∑∆ modulator (CT∑∆M) with high resolution, wide bandwidth, and low power consumption is very challenging. The multi-stage noise-shaping (MASH) CT∑∆M architecture is identified as an advancement to the single-loop CT∑∆M architecture in order to satisfy the ever stringent requirements of next generation wireless systems. However, it suffers from the problems of quantization noise leakage and non-ideal interstage interfacing which hinder its widespread adoption. To solve these issues, this dissertation proposes a MASH CT∑∆M with on-chip RC time constant calibration circuits, multiple feedforward interstage paths, and a fully integrated noise cancellation filter (NCF). The prototype core modulator architecture is a cascade of two single-loop second- order CT∑∆M stages, each of which consists of an integrator-based active-RC loop filter, current-steering feedback digital-to-analog converters, and a four-bit flash quantizer. On-chip RC time constant calibration circuits and high gain multi-stage operational amplifiers are realized to mitigate quantization noise leakage due to process variation. Multiple feedforward interstage paths are introduced to (i) synthesize a fourth-order noise transfer function with DC zeros, (ii) simplify the design of NCF, and (iii) reduce signal swings at the second-stage integrator outputs. Fully integrated in 40 nm CMOS, the prototype chip achieves 74.4 dB of signal-to-noise and distortion ratio (SNDR), 75.8 dB of signal-to-noise ratio, and 76.8 dB of dynamic range in 50.3 MHz of bandwidth (BW) at 1 GHz of sampling frequency with 43.0 mW of power consumption (P). It does not require external software calibration and possesses minimal out-of-band signal transfer function peaking. The figure-of-merit (FOM), defined as FOM = SNDR + 10 log10(BW/P), is 165.1 dB

Ring amplification for switched capacitor circuits

A comprehensive and scalable solution for high-performance switched capacitor amplification is presented. Central to this discussion is the concept of ring amplification. A ring amplifier is a small modular amplifier derived from a ring oscillator that naturally embodies all the essential elements of scalability. It can amplify with accurate rail-to-rail output swing, drive large capacitive loads with extreme efficiency using slew-based charging, naturally scale in performance according to process trends, and is simple enough to be quickly constructed from only a handful of inverters, capacitors, and switches. In addition, the gain-enhancement technique of Split-CLS is introduced, and used to extend the efficacy of ring amplifiers in specific and other amplifiers in general. Four different pipelined ADC designs are presented which explore the practical implementation options and design considerations relevant to ring amplification and Split-CLS, and are used to establish ring amplification as a new paradigm for scalable amplification