Flash Memory Devices

Flash memory devices have represented a breakthrough in storage since their inception in the mid-1980s, and innovation is still ongoing. The peculiarity of such technology is an inherent flexibility in terms of performance and integration density according to the architecture devised for integration. The NOR Flash technology is still the workhorse of many code storage applications in the embedded world, ranging from microcontrollers for automotive environment to IoT smart devices. Their usage is also forecasted to be fundamental in emerging AI edge scenario. On the contrary, when massive data storage is required, NAND Flash memories are necessary to have in a system. You can find NAND Flash in USB sticks, cards, but most of all in Solid-State Drives (SSDs). Since SSDs are extremely demanding in terms of storage capacity, they fueled a new wave of innovation, namely the 3D architecture. Today “3D” means that multiple layers of memory cells are manufactured within the same piece of silicon, easily reaching a terabit capacity. So far, Flash architectures have always been based on "floating gate," where the information is stored by injecting electrons in a piece of polysilicon surrounded by oxide. On the contrary, emerging concepts are based on "charge trap" cells. In summary, flash memory devices represent the largest landscape of storage devices, and we expect more advancements in the coming years. This will require a lot of innovation in process technology, materials, circuit design, flash management algorithms, Error Correction Code and, finally, system co-design for new applications such as AI and security enforcement

Nonvolatile memory characteristics associated with oxygen ion exchange in thin-film transistors with indium-zinc oxide channel and HfO2-x gate oxide

Non-charge-storage-based nonvolatile memory characteristics associated with oxygen ion exchange are demonstrated in a thin-film transistor (TFT) composed of an indium-zinc oxide (IZO) channel and an oxygen-deficient HfO2???x gate oxide. A nonvolatile increase in drain current and a reduced threshold voltage are obtained upon application of positive gate voltage, with the opposite characteristics upon application of negative voltage. The device shows nonvolatile retention properties and suitable endurance properties after repeated operations. Modulation of channel conductance occurs as a results of oxygen ion exchange between the HfO2???x gate oxide and the IZO channel, which consequently alters the oxygen vacancy concentration in the IZO channel; these vacancies act as n-type dopants. For comparison, a device with a thin SiO2 layer inserted between the HfO2???x gate oxide and the IZO channel to prevent oxygen ion exchange shows only the increased threshold voltage upon application of a positive gate voltage as a result of electron charging. These results verify the conductance modulation mechanism associated with oxygen ion exchange at the interface of the HfO2???x gate oxide and the IZO channel. In addition, the nonvolatile memory characteristics of the device are indicative of its potential for non-charge-storage-based nonvolatile memory application

Vertical Heterostructure III-V MOSFETs for CMOS, RF and Memory Applications

This thesis focuses mainly on the co-integration of vertical nanowiren-type InAs and p-type GaSb MOSFETs on Si (Paper I & II), whereMOVPE grown vertical InAs-GaSb heterostructure nanowires areused for realizing monolithically integrated and co-processed all-III-V CMOS.Utilizing a bottom-up approach based on MOVPE grown nanowires enablesdesign flexibilities, such as in-situ doping and heterostructure formation,which serves to reduce the amount of mask steps during fabrication. By refiningthe fabrication techniques, using a self-aligned gate-last process, scaled10-20 nm diameters are achieved for balanced drive currents at Ion ∼ 100μA/μm, considering Ioff at 100 nA/μm (VDD = 0.5 V). This is enabledby greatly improved p-type MOSFET performance reaching a maximumtransconductance of 260 μA/μm at VDS = 0.5 V. Lowered power dissipationfor CMOS circuits requires good threshold voltage VT matching of the n- andp-type device, which is also demonstrated for basic inverter circuits. Thevarious effects contributing to VT-shifts are also studied in detail focusing onthe InAs channel devices (with highest transconductance of 2.6 mA/μm), byusing Electron Holography and a novel gate position variation method (PaperV).The advancements in all-III-V CMOS integration spawned individual studiesinto the strengths of the n- and p-type III-V devices, respectively. Traditionallymaterials such as InAs and InGaAs provide excellent electrontransport properties, therefore they are frequently used in devices for highfrequency RF applications. In contrast, the III-V p-type alternatives have beenlacking performance mostly due to the difficult oxidation properties of Sb-based materials. Therefore, a study of the GaSb properties, in a MOSFETchannel, was designed and enabled by new manufacturing techniques, whichallowed gate-length scaling from 40 to 140 nm for p-type Sb-based MOSFETs(Paper III). The new fabrication method allowed for integration of deviceswith symmetrical contacts as compared to previous work which relied on atunnel-contact at the source-side. By modelling based on measured data fieldeffecthole mobility of 70 cm2/Vs was calculated, well in line with previouslyreported studies on GaSb nanowires. The oxidation properties of the GaSbgate-stack was further characterized by XPS, where high intensities of xraysare achieved using a synchrotron source allowed for characterization ofnanowires (Paper VI). Here, in-situ H2-plasma treatment, in parallel with XPSmeasurements, enabled a study of the time-dependence during full removalof GaSb native oxides.The last focus of the thesis was building on the existing strengths of verticalheterostructure III-V n-type (InAs-InGaAs graded channel) devices. Typically,these devices demonstrate high-current densities (gm >3 mS/μm) and excellentmodulation properties (off-state current down to 1 nA/μm). However,minimizing the parasitic capacitances, due to various overlaps originatingfrom a low access-resistance design, has proven difficult. Therefore, newmethods for spacers in both the vertical and planar directions was developedand studied in detail. The new fabrication methods including sidewall spacersachieved gate-drain capacitance CGD levels close to 0.2 fF/μm, which isthe established limit by optimized high-speed devices. The vertical spacertechnology, using SiO2 on the nanowire sidewalls, is further improved inthis thesis which enables new co-integration schemes for memory arrays.Namely, the refined sidewall spacer method is used to realize selective recessetching of the channel and reduced capacitance for large array memoryselector devices (InAs channel) vertically integrated with Resistive RandomAccess Memory (RRAM) memristors. (Paper IV) The fabricated 1-transistor-1-memristor (1T1R) demonstrator cell shows excellent endurance and retentionfor the RRAM by maintaining constant ratio of the high and low resistive state(HRS/LRS) after 106 switching cycles

Designs for increasing reliability while reducing energy and increasing lifetime

In the last decades, the computing technology experienced tremendous developments. For instance, transistors' feature size shrank to half at every two years as consistently from the first time Moore stated his law. Consequently, number of transistors and core count per chip doubles at each generation. Similarly, petascale systems that have the capability of processing more than one billion calculation per second have been developed. As a matter of fact, exascale systems are predicted to be available at year 2020. However, these developments in computer systems face a reliability wall. For instance, transistor feature sizes are getting so small that it becomes easier for high-energy particles to temporarily flip the state of a memory cell from 1-to-0 or 0-to-1. Also, even if we assume that fault-rate per transistor stays constant with scaling, the increase in total transistor and core count per chip will significantly increase the number of faults for future desktop and exascale systems. Moreover, circuit ageing is exacerbated due to increased manufacturing variability and thermal stresses, therefore, lifetime of processor structures are becoming shorter. On the other side, due to the limited power budget of the computer systems such that mobile devices, it is attractive to scale down the voltage. However, when the voltage level scales to beyond the safe margin especially to the ultra-low level, the error rate increases drastically. Nevertheless, new memory technologies such as NAND flashes present only limited amount of nominal lifetime, and when they exceed this lifetime, they can not guarantee storing of the data correctly leading to data retention problems. Due to these issues, reliability became a first-class design constraint for contemporary computing in addition to power and performance. Moreover, reliability even plays increasingly important role when computer systems process sensitive and life-critical information such as health records, financial information, power regulation, transportation, etc. In this thesis, we present several different reliability designs for detecting and correcting errors occurring in processor pipelines, L1 caches and non-volatile NAND flash memories due to various reasons. We design reliability solutions in order to serve three main purposes. Our first goal is to improve the reliability of computer systems by detecting and correcting random and non-predictable errors such as bit flips or ageing errors. Second, we aim to reduce the energy consumption of the computer systems by allowing them to operate reliably at ultra-low voltage level. Third, we target to increase the lifetime of new memory technologies by implementing efficient and low-cost reliability schemes

Computational and Numerical Simulations

Computational and Numerical Simulations is an edited book including 20 chapters. Book handles the recent research devoted to numerical simulations of physical and engineering systems. It presents both new theories and their applications, showing bridge between theoretical investigations and possibility to apply them by engineers of different branches of science. Numerical simulations play a key role in both theoretical and application oriented research

A design methodology for robust, energy-efficient, application-aware memory systems

Memory design is a crucial component of VLSI system design from area, power and performance perspectives. To meet the increasingly challenging system specifications, architecture, circuit and device level innovations are required for existing memory technologies. Emerging memory solutions are widely explored to cater to strict budgets. This thesis presents design methodologies for custom memory design with the objective of power-performance benefits across specific applications. Taking example of STTRAM (spin transfer torque random access memory) as an emerging memory candidate, the design space is explored to find optimal energy design solution. A thorough thermal reliability study is performed to estimate detection reliability challenges and circuit solutions are proposed to ensure reliable operation. Adoption of the application-specific optimal energy solution is shown to yield considerable energy benefits in a read-heavy application called MBC (memory based computing). Circuit level customizations are studied for the volatile SRAM (static random access memory) memory, which will provide improved energy-delay product (EDP) for the same MBC application. Memory design has to be aware of upcoming challenges from not only the application nature but also from the packaging front. Taking 3D die-folding as an example, SRAM performance shift under die-folding is illustrated. Overall the thesis demonstrates how knowledge of the system and packaging can help in achieving power efficient and high performance memory design.Ph.D

Data-intensive Systems on Modern Hardware : Leveraging Near-Data Processing to Counter the Growth of Data

Over the last decades, a tremendous change toward using information technology in almost every daily routine of our lives can be perceived in our society, entailing an incredible growth of data collected day-by-day on Web, IoT, and AI applications. At the same time, magneto-mechanical HDDs are being replaced by semiconductor storage such as SSDs, equipped with modern Non-Volatile Memories, like Flash, which yield significantly faster access latencies and higher levels of parallelism. Likewise, the execution speed of processing units increased considerably as nowadays server architectures comprise up to multiple hundreds of independently working CPU cores along with a variety of specialized computing co-processors such as GPUs or FPGAs. However, the burden of moving the continuously growing data to the best fitting processing unit is inherently linked to today’s computer architecture that is based on the data-to-code paradigm. In the light of Amdahl's Law, this leads to the conclusion that even with today's powerful processing units, the speedup of systems is limited since the fraction of parallel work is largely I/O-bound. Therefore, throughout this cumulative dissertation, we investigate the paradigm shift toward code-to-data, formally known as Near-Data Processing (NDP), which relieves the contention on the I/O bus by offloading processing to intelligent computational storage devices, where the data is originally located. Firstly, we identified Native Storage Management as the essential foundation for NDP due to its direct control of physical storage management within the database. Upon this, the interface is extended to propagate address mapping information and to invoke NDP functionality on the storage device. As the former can become very large, we introduce Physical Page Pointers as one novel NDP abstraction for self-contained immutable database objects. Secondly, the on-device navigation and interpretation of data are elaborated. Therefore, we introduce cross-layer Parsers and Accessors as another NDP abstraction that can be executed on the heterogeneous processing capabilities of modern computational storage devices. Thereby, the compute placement and resource configuration per NDP request is identified as a major performance criteria. Our experimental evaluation shows an improvement in the execution durations of 1.4x to 2.7x compared to traditional systems. Moreover, we propose a framework for the automatic generation of Parsers and Accessors on FPGAs to ease their application in NDP. Thirdly, we investigate the interplay of NDP and modern workload characteristics like HTAP. Therefore, we present different offloading models and focus on an intervention-free execution. By propagating the Shared State with the latest modifications of the database to the computational storage device, it is able to process data with transactional guarantees. Thus, we achieve to extend the design space of HTAP with NDP by providing a solution that optimizes for performance isolation, data freshness, and the reduction of data transfers. In contrast to traditional systems, we experience no significant drop in performance when an OLAP query is invoked but a steady and 30% faster throughput. Lastly, in-situ result-set management and consumption as well as NDP pipelines are proposed to achieve flexibility in processing data on heterogeneous hardware. As those produce final and intermediary results, we continue investigating their management and identified that an on-device materialization comes at a low cost but enables novel consumption modes and reuse semantics. Thereby, we achieve significant performance improvements of up to 400x by reusing once materialized results multiple times

High-Performance Energy-Efficient and Reliable Design of Spin-Transfer Torque Magnetic Memory

In this dissertation new computing paradigms, architectures and design philosophy are proposed and evaluated for adopting the STT-MRAM technology as highly reliable, energy efficient and fast memory. For this purpose, a novel cross-layer framework from the cell-level all the way up to the system- and application-level has been developed. In these framework, the reliability issues are modeled accurately with appropriate fault models at different abstraction levels in order to analyze the overall failure rates of the entire memory and its Mean Time To Failure (MTTF) along with considering the temperature and process variation effects. Design-time, compile-time and run-time solutions have been provided to address the challenges associated with STT-MRAM. The effectiveness of the proposed solutions is demonstrated in extensive experiments that show significant improvements in comparison to state-of-the-art solutions, i.e. lower-power, higher-performance and more reliable STT-MRAM design

Circuit design for embedded memory in low-power integrated circuits

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2012.Cataloged from PDF version of thesis.Includes bibliographical references (p. 141-152).This thesis explores the challenges for integrating embedded static random access memory (SRAM) and non-volatile memory-based on ferroelectric capacitor technology-into lowpower integrated circuits. First considered is the impact of process variation in deep-submicron technologies on SRAM, which must exhibit higher density and performance at increased levels of integration with every new semiconductor generation. Techniques to speed up the statistical analysis of physical memory designs by a factor of 100 to 10,000 relative to the conventional Monte Carlo Method are developed. The proposed methods build upon the Importance Sampling simulation algorithm and efficiently explore the sample space of transistor parameter fluctuation. Process variation in SRAM at low-voltage is further investigated experimentally with a 512kb 8T SRAM test chip in 45nm SOI CMOS technology. For active operation, an AC coupled sense amplifier and regenerative global bitline scheme are designed to operate at the limit of on current and off current separation on a single-ended SRAM bitline. The SRAM operates from 1.2 V down to 0.57 V with access times from 400ps to 3.4ns. For standby power, a data retention voltage sensor predicts the mismatch-limited minimum supply voltage without corrupting the contents of the memory. The leakage power of SRAM forces the chip designer to seek non-volatile memory in applications such as portable electronics that retain significant quantities of data over long durations. In this scenario, the energy cost of accessing data must be minimized. This thesis presents a ferroelectric random access memory (FRAM) prototype that addresses the challenges of sensing diminishingly small charge under conditions favorable to low access energy with a time-to-digital sensing scheme. The 1 Mb IT1C FRAM fabricated in 130 nm CMOS operates from 1.5 V to 1.0 V with corresponding access energy from 19.2 pJ to 9.8 pJ per bit. Finally, the computational state of sequential elements interspersed in CMOS logic, also restricts the ability to power gate. To enable simple and fast turn-on, ferroelectric capacitors are integrated into the design of a standard cell register, whose non-volatile operation is made compatible with the digital design flow. A test-case circuit containing ferroelectric registers exhibits non-volatile operation and consumes less than 1.3 pJ per bit of state information and less than 10 clock cycles to save or restore with no minimum standby power requirement in-between active periods.by Masood Qazi.Ph.D

SPATIAL TRANSFORMATION PATTERN DUE TO COMMERCIAL ACTIVITY IN KAMPONG HOUSE

ABSTRACT Kampung houses are houses in kampung area of the city. Kampung House oftenly transformed into others use as urban dynamics. One of the transfomation is related to the commercial activities addition by the house owner. It make house with full private space become into mixused house with more public spaces or completely changed into full public commercial building. This study investigate the spatial transformation pattern of the kampung houses due to their commercial activities addition. Site observations, interviews and questionnaires were performed to study the spatial transformation. This study found that in kampung houses, the spatial transformation pattern was depend on type of commercial activities and owner perceptions, and there are several steps of the spatial transformation related the commercial activity addition. Keywords: spatial transformation pattern; commercial activity; owner perception, kampung house; adaptabilit