Yearlong 500 C Operational Demonstration of Up-Scaled 4H-SiC JFET Integrated Circuits

This work describes recent progress in the design, processing, and testing of significantly up-scaled 500 C durable 4H-SiC junction field effect transistor (JFET) integrated circuit (IC) technology with two-level interconnect undergoing development at NASA Glenn Research Center. For the first time, stable electrical operation of semiconductor ICs for over one year at 500 C in air atmosphere is reported. These groundbreaking durability results were attained on two-level interconnect JFET demonstration ICs with 175 or more transistors on each chip. This corresponds to a more than 7-fold increase in 500 C-durable circuit complexity from the 24 transistor ring oscillator ICs reported at HiTEC 2016. These results advance the technology foundation for realizing long-term durable 500 C ICs with increased functional capability for combustion engine sensing and control, planetary exploration, deep-well drilling monitoring, and other harsh-environment applications

Methylation specific targeting of a chromatin remodeling complex from sponges to humans

DNA cytosine methylation and methyl-cytosine binding domain (MBD) containing proteins are found throughout all vertebrate species studied to date. However, both the presence of DNA methylation and pattern of methylation varies among invertebrate species. Invertebrates generally have only a single MBD protein, MBD2/3, that does not always contain appropriate residues for selectively binding methylated DNA. Therefore, we sought to determine whether sponges, one of the most ancient extant metazoan lineages, possess an MBD2/3 capable of recognizing methylated DNA and recruiting the associated nucleosome remodeling and deacetylase (NuRD) complex. We find that Ephydatia muelleri has genes for each of the NuRD core components including an EmMBD2/3 that selectively binds methylated DNA. NMR analyses reveal a remarkably conserved binding mode, showing almost identical chemical shift changes between binding to methylated and unmethylated CpG dinucleotides. In addition, we find that EmMBD2/3 and EmGATAD2A/B proteins form a coiled-coil interaction known to be critical for the formation of NuRD. Finally, we show that knockdown of EmMBD2/3 expression disrupts normal cellular architecture and development of E. muelleri. These data support a model in which the MBD2/3 methylation-dependent functional role emerged with the earliest multicellular organisms and has been maintained to varying degrees across animal evolution

6H-SiC Transistor Integrated Circuits Demonstrating Prolonged Operation at 500 C

The NASA Glenn Research Center is developing very high temperature semiconductor integrated circuits (ICs) for use in the hot sections of aircraft engines and for Venus exploration where ambient temperatures are well above the approximately 300 degrees Centigrade effective limit of silicon-on-insulator IC technology. In order for beneficial technology insertion to occur, such transistor ICs must be capable of prolonged operation in such harsh environments. This paper reports on the fabrication and long-term 500 degrees Centigrade operation of 6H-SiC integrated circuits based on epitaxial 6H-SiC junction field effect transistors (JFETs). Simple analog amplifier and digital logic gate ICs have now demonstrated thousands of hours of continuous 500 degrees Centigrade operation in oxidizing air atmosphere with minimal changes in relevant electrical parameters. Electrical characterization and modeling of transistors and circuits at temperatures from 24 degrees Centigrade to 500 degrees Centigrade is also described. Desired analog and digital IC functionality spanning this temperature range was demonstrated without changing the input signals or power supply voltages

Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 C

The fabrication and testing of the first semiconductor transistors and small-scale integrated circuits (ICs) to achieve up to 3000 h of stable electrical operation at 500 C in air ambient is reported. These devices are based on an epitaxial 6H-SiC junction field-effect transistor process that successfully integrated high temperature ohmic contacts, dielectric passivation, and ceramic packaging. Important device and circuit parameters exhibited less than 10% of change over the course of the 500 C operational testing. These results establish a new technology foundation for realizing durable 500 C ICs for combustion-engine sensing and control, deep-well drilling, and other harsh-environment applications

Long-Term Characterization of 6H-SiC Transistor Integrated Circuit Technology Operating at 500 C

NASA has been developing very high temperature semiconductor integrated circuits for use in the hot sections of aircraft engines and for Venus exploration. This paper reports on long-term 500 C electrical operation of prototype 6H-SiC integrated circuits based on epitaxial 6H-SiC junction field effect transistors (JFETs). As of this writing, some devices have surpassed 4000 hours of continuous 500 C electrical operation in oxidizing air atmosphere with minimal change in relevant electrical parameters

Yearlong 500 C Operational Demonstration of Up-Scaled 4H-SiC JFET Integrated Circuits

This work describes recent progress in the design, processing, upscaling, and testing of 500C durable two-level interconnect 4H-SiC JFET IC technology undergoing development at NASA Glenn Research Center. For the first time, stable electrical operation of semiconductor ICs for 1 year (8760 hours) at 500C in air atmosphere is reported. These groundbreaking durability results were attained on two-level interconnect JFET demonstration ICs with 175 or more transistors on each chip. This corresponds to a more than 7-fold increase in 500C-durable circuit complexity from the 24 transistor ring oscillator ICs reported at HiTEC 2016

Shape coexistence from lifetime and branching-ratio measurements in 68,70Ni

© 2016 The Author(s) Shape coexistence near closed-shell nuclei, whereby states associated with deformed shapes appear at relatively low excitation energy alongside spherical ones, is indicative of the rapid change in structure that can occur with the addition or removal of a few protons or neutrons. Near 68Ni (Z=28, N=40), the identification of shape coexistence hinges on hitherto undetermined transition rates to and from low-energy 0+ states. In 68,70Ni, new lifetimes and branching ratios have been measured. These data enable quantitative descriptions of the 0+ states through the deduced transition rates and serve as sensitive probes for characterizing their nuclear wave functions. The results are compared to, and consistent with, large-scale shell-model calculations which predict shape coexistence. With the firm identification of this phenomenon near 68Ni, shape coexistence is now observed in all currently accessible regions of the nuclear chart with closed proton shells and mid-shell neutrons

Prolonged 500 C Operation of 100+ Transistor Silicon Carbide Integrated Circuits

This report describes more than 5000 hours of successful 500 C operation of semiconductor integrated circuits (ICs) with more than 100 transistors. Multiple packaged chips with two different 4H-SiC junction field effect transistor (JFET) technology demonstrator circuits have surpassed thousands of hours of oven-testing at 500 C. After 100 hours of 500 C burn-in, the circuits (except for 2 failures) exhibit less than 10 change in output characteristics for the remainder of 500C testing. We also describe the observation of important differences in IC materials durability when subjected to the first nine constituents of Venus-surface atmosphere at 9.4 MPa and 460C in comparison to what is observed for Earth-atmosphere oven testing at 500 C

Processing and Prolonged 500 C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect

Complex integrated circuit (IC) chips rely on more than one level of interconnect metallization for routing of electrical power and signals. This work reports the processing and testing of 4H-SiC junction field effect transistor (JFET) prototype ICs with two levels of metal interconnect capable of prolonged operation at 500 C. Packaged functional circuits including 3-and 11-stage ring oscillators, a 4-bit digital to analog converter, and a 4-bit address decoder and random access memory cell have been demonstrated at 500 C. A 3-stage oscillator functioned for over 3000 hours at 500 C in air ambient

Disgust sensitivity relates to attitudes toward gay men and lesbian women across 31 nations

Previous work has reported a relation between pathogen-avoidance motivations and prejudice toward various social groups, including gay men and lesbian women. It is currently unknown whether this association is present across cultures, or specific to North America. Analyses of survey data from adult heterosexuals ( N = 11,200) from 31 countries showed a small relation between pathogen disgust sensitivity (an individual-difference measure of pathogen-avoidance motivations) and measures of antigay attitudes. Analyses also showed that pathogen disgust sensitivity relates not only to antipathy toward gay men and lesbians, but also to negativity toward other groups, in particular those associated with violations of traditional sexual norms (e.g., prostitutes). These results suggest that the association between pathogen-avoidance motivations and antigay attitudes is relatively stable across cultures and is a manifestation of a more general relation between pathogen-avoidance motivations and prejudice towards groups associated with sexual norm violations