Preventing carbon contamination of optical devices for X-rays: the effect of oxygen on photon-induced dissociation of CO on platinum

Platinum is one of the most common coatings used to optimize mirror reflectivity in soft X-ray beamlines. Normal operation results in optics contamination by carbon-based molecules present in the residual vacuum of the beamlines. The reflectivity reduction induced by a carbon layer at the mirror surface is a major problem in synchrotron radiation sources. A time-dependent photoelectron spectroscopy study of the chemical reactions which take place at the Pt(111) surface under operating conditions is presented. It is shown that the carbon contamination layer growth can be stopped and reversed by low partial pressures of oxygen for optics operated in intense photon beams at liquidnitrogen temperature. For mirrors operated at room temperature the carbon contamination observed for equivalent partial pressures of CO is reduced and the effects of oxygen are observed on a long time scale

Multiple satellites in materials with complex plasmon spectra: From graphite to graphene

International audienceThe photoemission spectrum of graphite is still debated. To help resolve this issue, we present photoemission measurements at high photon energy and analyze the results using a Green's function approach that takes into account the full complexity of the loss spectrum. Our measured data show multiple satellite replicas. We demonstrate that these satellites are of intrinsic origin, enhanced by extrinsic losses. The dominating satellite is due to the π+σ plasmon of graphite, whereas the π plasmon creates a tail on the high-binding energy side of the quasiparticle peak. The interplay between the two plasmons leads to energy shifts, broadening, and additional peaks in the satellite spectrum. We also predict the spectral changes in the transition from graphite towards graphene

Flat Electronic Bands in Long Sequences of Rhombohedral-stacked Multilayer Graphene

The crystallographic stacking order in multilayer graphene plays an important role in determining its electronic properties. It has been predicted that a rhombohedral (ABC) stacking displays a conducting surface state with flat electronic dispersion. In such a flat band, the role of electron-electron correlation is enhanced possibly resulting in high Tc superconductivity, charge density wave or magnetic orders. Clean experimental band structure measurements of ABC stacked specimens are missing because the samples are usually too small in size. Here, we directly image the band structure of large multilayer graphene flake containing approximately 14 consecutive ABC layers. Angle-resolved photoemission spectroscopy experiments reveal the flat electronic bands near the K point extends by 0.13 {\AA}-1 at the Fermi level at liquid nitrogen temperature. First-principle calculations identify the electronic ground state as an antiferromagnetic state with a band gap of about 40 meV

High Electron Mobility in Epitaxial Trilayer Graphene on Off-axis SiC(0001)

International audienceThe van de Waals heterostructure formed by an epitaxial trilayer graphene is of particular interest due to its unique tunable electronic band structure and stacking sequence. However, to date, there has been a lack in the fundamental understanding of the electronic properties of epitaxial trilayer graphene. Here, we investigate the electronic properties of large-area epitaxial trilayer graphene on a 4° off-axis SiC(0001) substrate. Micro-Raman mappings and atomic force microscopy (AFM) confirmed predominantly trilayer on the sample obtained under optimized conditions. We used angle-resolved photoemission spectroscopy (ARPES) and Density Functional Theory (DFT) calculations to study in detail the structure of valence electronic states, in particular the dispersion of π bands in reciprocal space and the exact determination of the number of graphene layers. Using far-infrared magneto-transmission (FIR-MT), we demonstrate, that the electron cyclotron resonance (CR) occurs between Landau levels with a (B)1/2 dependence. The CR line-width is consistent with a high Dirac fermions mobility of ~3000 cm2·V−1·s−1 at 4 K

Atomically Sharp Interface in an h-BN-epitaxial graphene van der Waals Heterostructure

International audienceStacking various two-dimensional atomic crystals is a feasible approach to creating unique multilayered van der Waals heterostructures with tailored properties. Herein for the first time, we present a controlled preparation of large-area h-BN/graphene heterostructures via a simple chemical deposition of h-BN layers on epitaxial graphene/SiC(0001). Van der Waals forces, which are responsible for the cohesion of the multilayer system, give rise to an abrupt interface without interdiffusion between graphene and h-BN, as shown by X-ray Photoemission Spectroscopy (XPS) and direct observation using scanning and High-Resolution Transmission Electron Microscopy (STEM/HRTEM). The electronic properties of graphene, such as the Dirac cone, remain intact and no significant charge transfer i.e. doping, is observed. These results are supported by Density Functional Theory (DFT) calculations. We demonstrate that the h-BN capped graphene allows the fabrication of vdW heterostructures without altering the electronic properties of graphene

Large area molybdenum disulphide-epitaxial graphene vertical Van der Waals heterostructures

International audienceTwo-dimensional layered transition metal dichalcogenides (TMDCs) show great potential for optoelectronic devices due to their electronic and optical properties. A metal-semiconductor interface, as epitaxial graphene - molybdenum disulfide (MoS2), is of great interest from the standpoint of fundamental science, as it constitutes an outstanding platform to investigate the interlayer interaction in van der Waals heterostructures. Here, we study large area MoS2-graphene-heterostructures formed by direct transfer of chemical-vapor deposited MoS2 layer onto epitaxial graphene/SiC. We show that via a direct transfer, which minimizes interface contamination, we can obtain high quality and homogeneous van der Waals heterostructures. Angle-resolved photoemission spectroscopy (ARPES) measurements combined with Density Functional Theory (DFT) calculations show that the transition from indirect to direct bandgap in monolayer MoS2 is maintained in these heterostructures due to the weak van der Waals interaction with epitaxial graphene. A downshift of the Raman 2D band of the graphene, an up shift of the A1g peak of MoS2 and a significant photoluminescence quenching are observed for both monolayer and bilayer MoS2 as a result of charge transfer from MoS2 to epitaxial graphene under illumination. Our work provides a possible route to modify the thin film TDMCs photoluminescence properties via substrate engineering for future device design

Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: electronic properties and band structure

We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy. X-Ray photoelectron spectroscopy suggests the presence of an interface without any reaction or intermixing, while the angle resolved photoemission spectroscopy (ARPES) measurements show that the h-BN layers are epitaxially aligned with graphite. A well-defined band structure is revealed by ARPES measurements, reflecting the high quality of the h-BN films. The measured valence band maximum located at 2.8 eV below the Fermi level reveals the presence of undoped h-BN films (band gap 6 eV). These results demonstrate that, although only weak van der Waals interactionsare present between h-BN and graphite, a long range ordering of h-BN can be obtained even on polycrystalline graphite via van der Waals epitaxy, offering the prospect of large area, single layer h-BN

Visible and Infrared Nanocrystal-Based Light Modulator with CMOS Compatible Bias Operation

Nanocrystals are now established light sources, and as synthesis and device integration have gained maturity, new functionalities can now be considered. So far, the emitted light from a nanocrystal population remains mostly driven by the structural properties (composition, size, and shape) of the particle, and only limited postsynthesis tunability has been demonstrated. Here, we explore the design of light amplitude modulators using a nanocrystal-based light-emitting diode operated under reverse bias. We demonstrate strong photoluminescence modulations for devices operating in the visible and near-telecom wavelengths using low bias operations (<3 V) compatible with conventional electronics. For a visible device based on 2D nanoplatelets, we demonstrate that the photoluminescence quenching is driven by the field-induced change of nonradiative decay rate and that the field is less involved than the particle charging. This work demonstrates that a simple diode stack can combine several functionalities (light-emitting diode, detector, and light modulator) simply by selecting the driving bias.The project is supported by ERC starting grant blackQD (Grant No. 756225) and Ne2Dem (Grant No. 853049). We acknowledge the use of clean-room facilities from the “Centrale de Proximité Paris-Centre”. This work has been supported by the Region Ile-de-France in the framework of DIM Nano-K (grant dopQD). This work is supported by French state funds managed by the ANR within the Investissements d’Avenir program under reference ANR-11-IDEX-0004-02, and more specifically within the framework of the Cluster of Excellence MATISSE and also by the grant IPER-Nano2 (ANR-18CE30-0023-01), Copin (ANR-19-CE24-0022), Frontal (ANR-19-CE09-0017), Graskop (ANR-19-CE09-0026), and NITQuantum (ANR-20-ASTR-0008–01), Bright (ANR-21-CE24–0012–02), MixDferro (ANR-21-CE09–0029) and QuickTera (ANR-22-CE09-0018). J.I.C. acknowledges support from UJI-B2021-06 and MICINN PID2021-128659NB-I00. H.Z. thanks China Scholarship Council for Ph.D. funding