Cryogenic characterisation and modelling of commercial SiC MOSFETs

Two commercial 1.2 kV SiC MOSFETs have been extensively characterised from 30 to 320 K. The temperature dependence of their I/V characteristics, threshold voltage, and breakdown voltage has been examined and are presented in this paper. Overall, the measured characteristics of both devices demonstrate very similar temperature dependencies and it is shown that below ~100 K any further decrease in temperature has little effect on any of the tested characteristics. Increasing temperature beyond 100 K results in a decrease in drain current for a given drain-source and gate-source voltage, a decrease in threshold voltage, and an increase in breakdown voltage. Successful attempts have been made to model the results of these tests by applying theories found in the literature

Physical characterisation of 3C-SiC(001)/SiO2 interface using XPS

Normally-on MOSFETs were fabricated on 3C-SiC epilayers using high temperature (1300 °C) wet oxidation process. XPS analysis found little carbon at the MOS interface yet the channel mobility (60 cm2/V.s) is considerably low. Si suboxides (SiOx, x<2) exist at the wet oxidised 3C-SiC/SiO2 interface, which may act as interface traps and degrade the conduction performance

Direct Visualization of Anti-Ferroelectric Switching Dynamics via Electrocaloric Imaging

The large electrocaloric coupling in PbZrO allows using high-speed infrared imaging for visualizing anti-ferroelectric switching dynamics via the associated temperature change. It is found that in ceramic samples of homogeneous temperature and thickness, switching is fast due to the generation of multiple nucleation sites, with devices responding in the millisecond range. By introducing gradients of thickness, however, it is possible to change the dynamics to propagation limited, whereby a single-phase boundary sweeps across the sample like a cold front, at a speed of ≈20 cm s. Additionally, introducing thermostatic temperature differences between two sides of the sample enables the simultaneous generation of a negative electrocaloric effect on one side and a positive one on the other, yielding a Janus-like electrocaloric response.The authors acknowledge financial support to ICN2, which is funded by the CERCA programme/Generalitat de Catalunya and by the Severo Ochoa programme of the Spanish Ministry of Economy, Industry and Competitiveness (MINECO, Grant No. SEV-2017-0706). The authors also acknowledge the support of Plan Nacional (MINECO, Grant Nos. MAT2016-77100-C2-1-P and BES-2016-077392), as well as the Agencia Estatal de Investigacion (Grant No. PID2019-108573GB-C21). R.F. and E.D. thank the Luxembourg National Research Fund (FNR) for funding part of this research through the projects CAMELHEAT/C17/MS/11703691/Defay. This work was also supported in part by the Spanish Ministry of Science, Innovation and Universities under the HIPERCELLS project (RTI2018-098392-B-I00), the Regional Government of the Generalitat de Catalunya under Grant Nos. 2017 SGR 1384 and 2017 SGR 00579. This work was also supported by the National Science Centre, Poland, within the Project No. 2016/21/B/ST3/02242

Functional oxide as an extreme high-k dielectric towards 4H-SiC MOSFET incorporation

MOS Capacitors are demonstrated on 4H-SiC using an octahedral ABO3 ferroic thin-film as a dielectric prepared on several buffer layers. Five samples were prepared: ABO3 on SiC, ABO3 on SiC with a SiO2 buffer (10 nm and 40 nm) and ABO3 on SiC with an Al2O3 buffer (10nm and 40 nm). Depending on the buffer material the oxide forms in either the pyrochlore or perovskite phase. A better lattice match with the Al2O3 buffer yields a perovskite phase with internal switchable dipoles. Hysteresis polarization-voltage loops show an oxide capacitance of ~ 0.2 μF/cm2 in the accumulation region indicating a dielectric constant of ~120

Electrical activation of nitrogen heavily implanted 3C-SiC(100)

A degenerated wide bandgap semiconductor is a rare system. In general, implant levels lie deeper in the band-gap and carrier freeze-out usually takes place at room temperature. Nevertheless, we have observed that heavily doped n-type degenerated 3C-SiC films are achieved by nitrogen implantation level of ∼6x1020cm-3 at 20K. According to temperature dependent Hall measurements, nitrogen activation rates decrease with the doping level from almost 100% (1.5x1019cm-3, donor level 15meV) to ∼12% for 6x1020cm-3. Free donors are found to saturate in 3C-SiC at ∼7x1019cm-3. The implanted film electrical performances are characterized as a function of the dopant doses and post implantation annealing (PIA) conditions by fabricating Van der Pauw structures. A deposited SiO2 layer was used as the surface capping layer during the PIA process to study its effect on the resultant film properties. From the device design point of view, the lowest sheet resistivity (∼1.4mΩ.cm) has been observed for medium doped (4x1019cm-3) sample with PIA 1375 °C 2 h without a SiO2 cap

Multiwavelength excitation Raman scattering analysis of bulk and 2 dimensional MoS2: vibrational properties of atomically thin MoS2 layers

In order to deepen the knowledge of the vibrational properties of two-dimensional (2D) MoS2 atomic layers, a complete and systematic Raman scattering analysis has been performed using both bulk single-crystal MoS2 samples and atomically thin MoS2 layers. Raman spectra have been measured under non-resonant and resonant conditions using seven different excitation wavelengths from near-infrared (NIR) to ultraviolet (UV). These measurements have allowed us to observe and identify 41 peaks, among which 22 have not been previously experimentally observed for this compound, and characterize the existence of different resonant excitation conditions for the different excitation wavelengths. This has also included the first analysis of resonant Raman spectra that are achieved using UV excitation conditions. In addition, the analysis of atomically thin MoS2 layers has corroborated the higher potential of UV resonant Raman scattering measurements for the non-destructive assessment of 2D MoS2 samples. Analysis of the relative integral intensity of the additional first- and second-order peaks measured under UV resonant excitation conditions is proposed for the non-destructive characterization of the thickness of the layers, complementing previous studies based on the changes of the peak frequencies

p-Type Ultrawide-Band-Gap Spinel ZnGa2O4: New Perspectives for Energy Electronics

The family of spinel compounds is a large and important class of multifunctional materials of general formulation AB2X4 with many advanced applications in energy and optoelectronic areas such as fuel cells, batteries, catalysis, photonics, spintronics, and thermoelectricity. In this work, it is demonstrated that the ternary ultrawide-band-gap (∼5 eV) spinel zinc gallate (ZnGa2O4) arguably is the native p-type ternary oxide semiconductor with the largest Eg value (in comparison with the recently discovered binary p-type monoclinic β-Ga2O3 oxide). For nominally undoped ZnGa2O4 the high-temperature Hall effect hole concentration was determined to be as large as p = 2 × 1015 cm–3, while hole mobilities were found to be μh = 7–10 cm2/(V s) (in the 680–850 K temperature range). An acceptor-like small Fermi level was further corroborated by X-ray spectroscopy and by density functional theory calculations. Our findings, as an important step toward p-type doping, opens up further perspectives for ultrawide-band-gap bipolar spinel electronics and further promotes ultrawide-band-gap ternary oxides such as ZnGa2O4 to the forefront of the quest of the next generation of semiconductor materials for more efficient energy optoelectronics and power electronics

On the application of novel high temperature oxidation processes to enhance the performance of high voltage silicon carbide PiN diodes

In this paper, the application of a combined high temperature (1550°C) thermal oxidation / annealing process has been applied to 4H-SiC PiN diodes with 110 μm thick n-type drift regions, for the purpose of increasing the carrier lifetime in the semiconductor. PiN diodes were fabricated on lifetime-enhanced 4H-SiC material, then were electrically characterised and compared against fabricated control sample PiN diodes. Forward current-voltage (I-V) measurements showed that the lifetime-enhanced devices typically had around 15% lower forward voltage drop and 40% lower differential on-resistance (at 100 A/cm2 and 25°C) when compared against control sample PiN diodes. Reverse I-V measurements indicated that the reverse leakage current was strongly dependent on the active area, and hence perimeter-to-area ratio, of the fabricated devices, though large-area PiN diodes were measured to have a reverse leakage current density of around 1 nA/cm2 (at 100 V reverse bias). Analysis of reverse recovery characteristics illustrated the excellent transient characteristics of both types of fabricated device, though, as expected from the increased carrier lifetime, the lifetime-enhanced PiN diodes had around 22% higher reverse recovery charge. The minority carrier lifetime was also extracted from reverse recovery characteristics; PiN diodes fabricated on the lifetime-enhanced 4H-SiC material were found to have a carrier lifetime over 35% higher than the control sample devices. Analysis of the overall power losses of both types of device found that the lifetime-enhanced PiN diodes typically dissipated around 40% less energy over the complete switching cycle than the control sample PiN diodes at 25°C

Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor

The gallium nitride (GaN)-based buffer/barrier mode of growth and morphology, the transistor electrical response (25–310 °C) and the nanoscale pattern of a homoepitaxial AlGaN/GaN high electron mobility transistor (HEMT) have been investigated at the micro and nanoscale. The low channel sheet resistance and the enhanced heat dissipation allow a highly conductive HEMT transistor ( I ds > 1 A mm −1 ) to be defined (0.5 A mm −1 at 300 °C). The vertical breakdown voltage has been determined to be ∼850 V with the vertical drain-bulk (or gate-bulk) current following the hopping mechanism, with an activation energy of 350 meV. The conductive atomic force microscopy nanoscale current pattern does not unequivocally follow the molecular beam epitaxy AlGaN/GaN morphology but it suggests that the FS-GaN substrate presents a series of preferential conductive spots (conductive patches). Both the estimated patches density and the apparent random distribution appear to correlate with the edge-pit dislocations observed via cathodoluminescence. The sub-surface edge-pit dislocations originating in the FS-GaN substrate result in barrier height inhomogeneity within the HEMT Schottky gate producing a subthreshold current