An approach to harmonic load- and source-pull measurements for high-efficiency PA design

High-efficiency power-amplifier design requires numerous efforts to investigate both input and output harmonic terminations effects. A simplified theoretical approach to clarify the relevance of such terminations is presented here, and design criteria to improve efficiency for high-frequency applications are briefly discussed. An advanced active load/source-pull test-bench has been used to validate theoretical harmonic tuning techniques, characterizing an active device. The adopted optimization strategy is presented, together with measured results obtained with a medium-power 1-mm MESFET at 1 GHz. Input second harmonic impedances effects are stressed, showing a drain efficiency spread between 37%-49% for a fixed input power level, corresponding to 1-dB compression. Finally, as predicted by the presented theory, after input second harmonic tuning, further improvements are obtained, increasing fundamental output load resistive part, demonstrating an additional drain efficiency enhancement, which reaches a level of 55% at 1-dB compression

Design for Manufacturing of Electro-Mechanical Assemblies in the Aerospace Industry

Electronic design engineers struggle continuously to obtain a satisfactory trade-off between item performance and cost. On one hand, they would like to employ the best material and components available on the market and opt for time-consuming manufacturing processes in order to obtain high-performance parts. On the other hand, such choice would lead to high recurring cost making the part less attractive in the market. In this scenario, industrial engineering team becomes a crucial industrial entity. It assists the Design Engineers by providing design rules or guidelines. This guidance is intended to provide recommendation to the development team in order to define what is technically feasible and achievable inside an industrial process contest. These rules should not be too strict in order to guarantee acceptable part performance and therefore market attractiveness. The rules contain guidelines on mechanical, process and material aspects. This chapter will focus on design for manufacturing of electro-mechanical parts for the aerospace industry typically being a high-end and high-performance part. Nevertheless, cost and time remain a key aspect to guarantee. The effects of such rules on mechanical and electrical performance will be highlighted and discusses, with a specific focus ion high frequency electrical assemblies (1–30 GHz). It will also contain a review on microelectronic production techniques that impact on the part’s electrical performance

UWB Circuits and Sub-Systems for Aerospace, Defence and Security Applications

In order to maintain technological superiority over other systems, modern equipment for aerospace, defence and security (ADS) applications require advanced integrated circuits operating at microwave and millimetre wave frequencies. High integration is necessary to obtain low SWaP-C features thus enabling the installation of this category of equipment in unfriendly environments: compact spaces, and subject to heavy mechanical loads and temperature stress. This chapter reviews the topology, technology and trends of microwave circuits in UWB systems for ADS applications. Amplification at high frequency is a crucial function: high power amplifiers in the transmit (Tx) chain and low-noise amplifiers in the receive (Rx) chain will be revised, in addition to medium-power (gain) amps. Signal conditioning and routing is also essential: MIMO architecture are becoming the standard and therefore switching and signal phasing and attenuation is increasingly needed, to obtain the desired beam steering and shaping. Each type of circuits leverages the benefits of either gallium nitride (GaN) or gallium arsenide (GaAs), and the role of the semiconductor will be explained. Finally, an outline on multi-functional circuits (single-chip front-ends and core-chips) will be presented: the trend is to realize the whole microwave section of a Tx/Rx module with only to MMICs that perform all the functionalities requested at microwave frequencies

Feasibility study and design of a robust low-noise amplifier operating at millimeter-wave for high reliability applications

A feasibility study and the corresponding design flow for robust millimeter wave GaN LNAs is provided in this paper. Particular attention is devoted to the selection of the optimum geometry of the first stage active device. A trade-off is shown between noise performance and robustness requirements. The beneficial effects of source degenerative feedback are shown. The LNA's simulated performance are gain > 20B, NF < 1.7dB and power handling capability verified up to +20 dBm input power in CW operation. This design is well suited for operation in high reliability systems, such as space operation on airborne applications

Theoretical and experimental assessment of the non-linear scattering functions for the cad of non-linear microwave circuits

The Non-Linear Scattering Functions have been theoretically defined and experimentally measured for the linear-equivalent design of non-linear circuits in arbitrary large signal conditions. Non-linear measures and simulations have been compared, with good agreement. Linear CAD concepts can therefore be extended to non-linear circuits in a rigorous way

Baseband Predistortion Lineariser Using Direct Spline Computation

A baseband predistorter is presented. Key features of the predistorter resides in the use of cubic splines interpolation to generate predistorted input data to the power amplifier, resulting in a reduction of computational effort with respect to traditional polynomial interpolators. Simulated behaviour of the proposed scheme is presented, demonstrating the effectiveness of the approach

Can Ptilinopus greyii (Columbidae) Disperse Seeds in New Caledonia’s Dry Forests?

v. ill. 23 cm.QuarterlyConservation of endangered habitats of South Pacific islands is partially dependent on activity of seed dispersers. In consuming fruits, animals can spread seeds from parent plants to distant sites, thus contributing to plant regeneration and colonization of new sites. In the dry forests of New Caledonia, the red-bellied fruit-dove, Ptilinopus greyii, is a potential disperser of many fleshyfruited species. Trials with a captive bird showed that gut passage enhanced seed germination for Diospyros fasciculosa and Mimusops elengi but not for Vitex cf. collina, compared with whole fruits. Gut passage did not shorten duration of seed dormancy, which is consistent with evidence of a simple deinhibition effect for D. fasciculosa and M. elengi. Minimum Retention Time (MRT) of seeds in the gut differed significantly between the three tree species, from a mean of 17.4 min for D. fasciculosa to a mean of 52.4 min for M. elengi. These times are longer than observed foraging times in fruiting trees, potentially making this fruit-dove an effective seed disperser

Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability

Surface transfer doping of hydrogen-terminated diamond has been achieved utilising V2O5 as a surface electron accepting material. Contact between the oxide and diamondsurface promotes the transfer of electrons from the diamond into the V2O5 as revealed by the synchrotron-based high resolution photoemission spectroscopy. Electrical characterization by Hall measurement performed before and after V2O5 deposition shows an increase in hole carrier concentration in the diamond from 3.0 × 1012 to 1.8 × 1013 cm−2 at room temperature. High temperature Hall measurements performed up to 300 °C in atmosphere reveal greatly enhanced thermal stability of the hole channel produced using V2O5 in comparison with an air-induced surface conduction channel. Transfer doping of hydrogen-terminated diamond using high electron affinity oxides such as V2O5 is a promising approach for achieving thermally stable, high performance diamond based devices in comparison with air-induced surface transfer dopin

Ka-band High-linearity and Low-noise Gallium Nitride MMIC Amplifiers for Spaceborne Telecommunications

Gallium Nitride is becoming an interesting solution for low-noise applications in the lower part of the millimetre-wave spectrum and is gaining increasing attention in the space community for microwave receiver functionalities. Lately, its maturity level has increased and its performance in terms of noise figure and operating frequency is reaching other advanced III-V technologies such as Gallium Arsenide and Indium Phoshpide. Moreover, Gallium Nitride features higher power handling capability in comparison to the previously mentioned III-V technologies. In this context, we have designed and characterized two demonstrator circuits of critical microwave receiver functionalities: a Low-Noise Amplifier and a Low-Distortion Amplifier operating at Ka-band. It is shown that GaN circuits compare well in terms of noise figure, gain, and operating frequency with respect to other advanced III-V technologies, and most of all exhibit superior linearity in terms of intermodulation distortion. The designed Low-Noise Amplifier exhibits state-of-the-art 1.2 dB Noise Figure in the 27-31 GHz bandwidth thanks to a profitable combination of 60- and 100-nm gate length transistors on the same MMIC. On the other hand, the Low-Distortion Amplifier features state-of-the-art +30 dBm Output Third Order Intercept point in the same operating bandwidth while requiring only 216 mW dc power. The presented electrical performances are validated by comparing these designs to others available in open literature through figures of merit that normalize trade-offs by transistor length (therefore a fair comparison) aiming to highlight the merits of the proposed design methodologies

GaN LNAs for Robust Receiving Systems in Radar and Space Applications

In this contribution a series of integrated circuits and methodologies, purposely developed for application in microwave receiving subsystems, will be presented. The integrated circuits, realized in GaN integrated technologies by different suppliers, find their applications in telecom systems as well as in RADAR ones, mainly for space-based apparatuses. The respective performance, as well as the key design methods will be presented in the contribution for bandwidths ranging from S-Band up to K-Band