11 research outputs found
Key low temperature processes for a silicon-based 3D sequential integration
International audienc
Key low temperature processes for a silicon-based 3D sequential integration
International audienc
Record RF Performance (ft=180GHz and fmax=240GHz) of a FDSOI NMOS processed within a Low Thermal Budget for 3D Sequential Integration
International audienceRecord RF Figure-Of-Merits (FoM) is highlighted for a 42nm NMOS transistor fully processed at Low Thermal Budget (LTB) (<500°C) needed for 3D Sequential Integration (3DSI). f T =180GHz & f MAX =240GHz are reported at V DD =0.9V; which is actually very similar to performance of reference Si MOSfets processed with a Hot Thermal Budget (HTB) (Fig. 15). This excellent result was possible thanks to a careful optimization of the LTB process after an advanced characterization and modeling of key technological parameters such as mobility, Gate-Capacitance and Gate resistance</p
Record RF Performance (ft=180GHz and fmax=240GHz) of a FDSOI NMOS processed within a Low Thermal Budget for 3D Sequential Integration
International audienceRecord RF Figure-Of-Merits (FoM) is highlighted for a 42nm NMOS transistor fully processed at Low Thermal Budget (LTB) (<500°C) needed for 3D Sequential Integration (3DSI). f T =180GHz & f MAX =240GHz are reported at V DD =0.9V; which is actually very similar to performance of reference Si MOSfets processed with a Hot Thermal Budget (HTB) (Fig. 15). This excellent result was possible thanks to a careful optimization of the LTB process after an advanced characterization and modeling of key technological parameters such as mobility, Gate-Capacitance and Gate resistance</p
Specificities of linear Si QD arrays integration and characterization
International audienceThe low temperature operation of quantum computing devices implies developing characterization protocols, from extensive statistical tests to targeted device screening at cryogenic temperature. This paper reviews major integration constraints arising in linear Si quantum dots arrays and their implication on both the device operation and electrical characterization