370 research outputs found

    The role of women in disputing among the Ila of Zambia: political adaptation in legal change

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    African Studies Center Working Paper No. 46This article examines the role of female litigants within the changing social context of disputing and dispute processing among the Ila of Zambia. While the historical and contemporary case material upon which this article is based ultimately reveals a complexity of substantive and procedural points of law across the spectrum of disputing modes and disputing forums available to aggrieved Ila females, here I am more concerned with the elaboration of social realities in legal process -- the social forces which shape legal expectations. Such elaboration, I argue, requires not only an examination of law and dispute settlement, but also the political context of disputing and dispute processing. This article, therefore, addresses itself to rather skeletal theory generated from research conducted under the broad heading of "the politics of law." [TRUNCATED

    Silicon Based Schottky Diodes and MOS Capacitors for Sensing Singly and Multiply Charged Ions with Low Kinetic Energy

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    This study provides the foundation for the development of radiation detection technology of slow ions by investigating the fundamental interactions of slow ion beams with electronic devices. Silicon samples with a 50 nm oxide layer were irradiated with 1 keV ArQ+ beams (Q = 4, 8, and 11) at normal incidence in order to investigate the relatively unexplored effects of slow highly charged ions (HCIs) on electronic devices. After irradiation, an array of metal contacts was deposited onto the oxidized silicon samples to create metal oxide semiconductor (MOS) capacitors, which were then characterized using high frequency capacitance-voltage (C V) measurements. The slow HCI irradiation was found to result in stretchout and shifting of the C-V curves, indicating the presence of dangling Si bond defects at the semiconductor/oxide interface and trapped oxide charge, respectively. Near quadratic charge state dependencies were also observed for both the stretchout and the shift seen in the C-V curves, in agreement with charge state dependent stopping power of HCIs previously reported. The interaction of slow singly charged ions with Schottky diodes was also investigated, in part to serve as a baseline for experiments with slow HCIs by isolating the effects of the kinetic energy of the ions. Diodes with two different Schottky contact thicknesses (~26 nm and ~360 nm) were irradiated by Na+ beams at normal incidence with energies 0.5 keV, 1.0 keV, 1.5 keV, and 2.0 keV. No instantaneous change in diode current was observed while the diodes were under irradiation; however, noticeable changes in Schottky barrier height, ideality factor, and reverse leakage current were noted after irradiation. The diodes irradiated at 2.0 keV showed signs of degradation consistent with reports from the literature, but at the three lower ion beam energies the diodes showed an improvement in the ideality factor accompanied by an increase in Schottky barrier height and an initial decrease in reverse leakage current. Although the direct mechanism for these diode improvements is not fully understood, it is proposed that the changes arise from increased spatial homogeneity of the Schottky barrier height across the diode

    Reiter\u27s disease

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    On Being A Good Neighbor

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    This research supports the design of a museum dedicated to reconciliation on the issue of human slavery. Throughout the museum guests will be ushered through contemplation to prepare for the context of the museum, gallery exhibitions chronicling the slavery and corporate apologia. The aim of the museum is to aid guests toward taking ownership of the history of slavery while simultaneously offering up forgiveness for it. Platforms for spoken word art, lecture halls and spaces dedicated to dialogue will be included. The chronological progression through the museum will move guests from introspection to education, personal acceptance to forgiveness. Guests will end the museum at a community space, reconciled to each other and on equal ground

    Dual Enrollment Matriculation Rates at Tennessee Board of Regents Community Colleges

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    The purpose of this descriptive, quantitative study is to explore the matriculation rates for first-time, full-time freshmen who were previously enrolled in dual enrollment courses while in high school at one of the 13 public community colleges in Tennessee. Percentages, means, standard deviations, ranges, percentages, and proportions were used to describe the data from the 13 public community colleges in Tennessee. The total number of dual enrollment students from 2016 to 2021 across the 13 community colleges over the five-year period was 80,051. Of the 80,051 students, 16,727 students matriculated to their home institution and 63,324 did not. Findings from the study revealed that the total matriculation of the 13 community colleges over the period totaled a mean percentage of 20.90% or a ratio equating to nearly 1:4. Other variables such as matriculations by gender, race, earned credits, GPA, and ACT scores were studied to better understand matriculation rates by demographic variables. Findings will allow for community colleges within the Tennessee Board of Regents system to be compared based on matriculation rates and various demographics. Data from each of the 13 Tennessee community colleges data were analyzed independently for a five-year period (2016 – 2021)

    Production study of gadolinium-153

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    Production of gadolinium-153 for use in atmospheric density gages based on gamma backscatter measurement

    Silicon Based Schottky Diodes and MOS Capacitors for Sensing Singly and Multiply Charged Ions with Low Kinetic Energy

    Get PDF
    This study provides the foundation for the development of radiation detection technology of slow ions by investigating the fundamental interactions of slow ion beams with electronic devices. Silicon samples with a 50 nm oxide layer were irradiated with 1 keV ArQ+ beams (Q = 4, 8, and 11) at normal incidence in order to investigate the relatively unexplored effects of slow highly charged ions (HCIs) on electronic devices. After irradiation, an array of metal contacts was deposited onto the oxidized silicon samples to create metal oxide semiconductor (MOS) capacitors, which were then characterized using high frequency capacitance-voltage (C-V) measurements. The slow HCI irradiation was found to result in stretchout and shifting of the C-V curves, indicating the presence of dangling Si bond defects at the semiconductor/oxide interface and trapped oxide charge, respectively. Near quadratic charge state dependencies were also observed for both the stretchout and the shift seen in the C-V curves, in agreement with charge state dependent stopping power of HCIs previously reported. The interaction of slow singly charged ions with Schottky diodes was also investigated, in part to serve as a baseline for experiments with slow HCIs by isolating the effects of the kinetic energy of the ions. Diodes with two different Schottky contact thicknesses (~26 nm and ~360 nm) were irradiated by Na+ beams at normal incidence with energies 0.5 keV, 1.0 keV, 1.5 keV, and 2.0 keV. No instantaneous change in diode current was observed while the diodes were under irradiation; however, noticeable changes in Schottky barrier height, ideality factor, and reverse leakage current were noted after irradiation. The diodes irradiated at 2.0 keV showed signs of degradation consistent with reports from the literature, but at the three lower ion beam energies the diodes showed an improvement in the ideality factor accompanied by an increase in Schottky barrier height and an initial decrease in reverse leakage current. Although the direct mechanism for these diode improvements is not fully understood, it is proposed that the changes arise from increased spatial homogeneity of the Schottky barrier height across the diode

    Tracing Kepone contamination in James estuary sediments

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    The escape of Kepone into the James River estuary, Virginia, for more than nine years produced widespread contamination of the sediments with important ecological consequences. The pollutant extended seaward more than 100 km from its source and contaminated an estimated 31 million tonnes of sediment to depths of more than 60 cm. Kepone spread through the food chain and to every segment of the environment from marshes to the channel floor. Kepone escaped mainly during high river inflow from a point source in freshwater tributaries. Near the source Kepone is associated with organic material but in the low er estuary it is adsorbed on fine­grained sediment. A bulk of the contaminated sediment is transported and trapped by the estuarine circulation. It accumulates in the turbidity maximum of the middle estuary far from the source. In this zone it is deposited in less energetic sites where sedimentation is relatively fast. Contamination extends downward \u3e 60 cm ; peak concentrations at 10 to 25 cm relate to high production in 1974. The Kepone inventory is now being buried by less contaminated sediment. “ Recovery” is most rapid in the middle estuary where contamination was most intense
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