15 research outputs found
Direct Time Resolved Observation of Carrier Trapping and Polaron Conductivity in BiVO4
BiVO<sub>4</sub> is a promising photoanode
candidate for water
splitting applications, but its microscopic charge carrier transport
properties are not yet fully understood. We investigated the photoinduced
carrier mobility for undoped and 1% tungsten-doped BiVO<sub>4</sub> thin films in an early time window from 1 ps to 1 ns using THz spectroscopy.
The combined electronâhole effective mobility gradually decreases
with time by 1 order of magnitude starting at an upper limit of âŒ0.4
cm<sup>2</sup> V<sup>â1</sup> s<sup>â1</sup>. The loss
is attributed to carrier localization. We provide for the first time
direct time-resolved evidence of hole polaron formation accompanied
by the temporal buildup of a polaron population in parallel to initial
carrier trapping. A mobility of 0.02 cm<sup>2</sup> V<sup>â1</sup> s<sup>â1</sup> is found for the self-trapped carriers, which
leads to a thermal hopping activation energy of âŒ90 meV
Efficient Electron Injection from Acyloin Anchored Semisquarylium Dyes into Colloidal TiO2 Films for Organic Dye Sensitized Solar Cells
Efficient Electron Injection from Acyloin-Anchored Semisquarylium Dyes into Colloidal TiO<sub>2</sub> Films for Organic Dye-Sensitized Solar Cells
Semisquarylium
dyes use a novel acyloin anchor group to strongly
bind to TiO<sub>2</sub> semiconductors. Efficient acyloin anchor mediated
electron injection into nanocrystalline TiO<sub>2</sub> is demonstrated,
allowing highly efficient dye-sensitized solar cells with IPCEs >
80%. The acyloin anchor can thus be viewed as a true alternative to
the standard carboxylic acid anchor group. The opto-electronic and
electron injection properties of the most basic semisquarylium dye
<b>SY404</b> are compared to the modified semisquarylium
dye <b>DD1</b> and the carboxylic acid anchored indoline dye
<b>D131</b> using a combination of ultrafast and photoemission
spectroscopy. For <b>SY404</b>, ultrafast injection times of
âŒ50 fs are found despite a small energetic driving force between
dye excited states and TiO<sub>2</sub> conduction band minimum. This
is possible due to the strong electronic coupling of the semisquarylium
dyes to the TiO<sub>2</sub> surface mediated by the acyloin anchor.
For a better overlap with the solar spectrum, the semisquarylium dyes
are modified by substitution with a larger donor moiety (<b>DD1</b>). While for <b>DD1</b> the overall absorption increases, the
injection process slightly slows down; however, it still proves fast
enough for very efficient injection. Compared to the carboxylic acid
anchored indoline dye <b>D131</b>, the <b>SY404</b> dye
injects more than seven times faster despite a âŒ150 meV smaller
driving force
Nanoseconds-resolved transient FTIR spectroscopy as a tool for studying the photocatalytic behavior of various types of bismuth vanadate
A âsurface patchingâ strategy to achieve highly efficient solar water oxidation beyond surface passivation effect
Photocurrent Enhancement by Spontaneous Formation of a p-n Junction in Calcium-Doped Bismuth Vanadate Photoelectrodes
Enhancing Charge Carrier Lifetime in Metal Oxide Photoelectrodes through Mild Hydrogen Treatment
Widespread application of solar water splitting for energy conversion is largely dependent on the progress in developing not only efficient but also cheap and scalable photoelectrodes. Metal oxides, which can be deposited with scalable techniques and are relatively cheap, are particularly interesting, but high efficiency is still hindered by the poor carrier transport properties (i.e., carrier mobility and lifetime). Here, a mild hydrogen treatment is introduced to bismuth vanadate (BiVO4), which is one of the most promising metal oxide photoelectrodes, as a method to overcome the carrier transport limitations. Time-resolved microwave and terahertz conductivity measurements reveal more than twofold enhancement of the carrier lifetime for the hydrogen-treated BiVO4, without significantly affecting the carrier mobility. This is in contrast to the case of tungsten-doped BiVO4, although hydrogen is also a donor type dopant in BiVO4. The enhancement in carrier lifetime is found to be caused by significant reduction of trap-assisted recombination, either via passivation or reduction of deep trap states related to vanadium antisite on bismuth or vanadium interstitials according to density functional theory calculations. Overall, these findings provide further insights on the interplay between defect modulation and carrier transport in metal oxides, which benefit the development of low-cost, highly-efficient solar energy conversion devices